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| D TO-247 G S APT1002RBN (R) 1000V 7.0A 2.00 POWER MOS IV MAXIMUM RATINGS Symbol VDSS ID IDM VGS PD TJ,TSTG TL Parameter Drain-Source Voltage APT1002R4BN 1000V 6.5A 2.40 N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS All Ratings: TC = 25C unless otherwise specified. APT 1002RBN APT 1002R4BN UNIT Volts Amps 1000 7.0 28 30 240 1.96 1000 6.5 26 Continuous Drain Current @ TC = 25C Pulsed Drain Current Gate-Source Voltage Total Power Dissipation @ TC = 25C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. 1 Volts Watts W/C C -55 to 150 300 STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS Characteristic / Test Conditions / Part Number Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 A) On State Drain Current 2 MIN APT1002RBN APT1002R4BN APT1002RBN APT1002R4BN APT1002RBN APT1002R4BN TYP MAX UNIT Volts 1000 1000 7.0 Amps ID(ON) (VDS > I D(ON) x R DS(ON) Max, VGS = 10V) Drain-Source On-State Resistance (VGS = 10V, 0.5 ID [Cont.]) Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) 2 6.5 2.00 Ohms RDS(ON) 2.40 250 1000 100 2 4 A nA Volts IDSS IGSS VGS(TH) Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125C) Gate-Source Leakage Current (VGS = 30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 1.0mA) THERMAL CHARACTERISTICS Symbol RJC RJA Characteristic Junction to Case Junction to Ambient MIN TYP MAX UNIT C/W 050-0009 Rev B 0.51 40 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. USA 405 S.W. Columbia Street Bend, Oregon 97702 -1035 F-33700 Merignac - France Phone: (541) 382-8028 Phone: (33) 5 57 92 15 15 FAX: (541) 388-0364 FAX: (33) 5 56 47 97 61 EUROPE Avenue J.F. Kennedy Bat B4 Parc Cadera Nord DYNAMIC CHARACTERISTICS Symbol Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 3 APT1002R/1002R4BN Test Conditions VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 0.5 VDSS ID = ID [Cont.] @ 25C VGS = 15V VDD = 0.5 VDSS ID = ID [Cont.] @ 25C RG = 1.8 MIN TYP MAX UNIT 1530 230 80 66 6.5 36 14 13 55 19 1800 325 120 105 10 54 28 26 82 37 ns nC pF Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol IS ISM VSD t rr Q rr Characteristic / Test Conditions / Part Number Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage 1 MIN APT1002RBN APT1002R4BN APT1002RBN APT1002R4BN TYP MAX UNIT 7.0 6.5 28 26 1.3 450 2.5 910 5 Volts ns C Amps 2 (VGS = 0V, IS = -ID [Cont.]) Reverse Recovery Time (IS = -ID [Cont.], dl S/dt = 100A/s) Reverse Recovery Charge (IS = -ID [Cont.], dl S/dt = 100A/s) SAFE OPERATING AREA CHARACTERISTICS Symbol SOA1 SOA2 ILM Characteristic Safe Operating Area Safe Operating Area Inductive Current Clamped Test Conditions / Part Number VDS = 0.4 VDSS, IDS = PD / 0.4 VDSS, t = 1 Sec. IDS = ID [Cont.], VDS = PD / ID [Cont.], t = 1 Sec. APT1002RBN APT1002R4BN MIN TYP MAX UNIT Watts 240 240 28 26 Amps 1 Repetitive Rating: Pulse width limited by maximum junction temperature. See Transient Thermal Impedance Curve. (Fig.1) 2 Pulse Test: Pulse width < 380 S, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 APT Reserves the right to change, without notice, the specifications and information contained herein. 1.0 0.5 D=0.5 0.2 0.1 0.1 0.05 0.05 0.02 0.01 0.005 050-0009 Rev B SINGLE PULSE 0.01 Note: PDM t1 t2 2 Peak TJ = PDM x ZJC + TC Duty Factor D = t1/t 0.001 10-5 10-3 10-2 10-1 1.0 10 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 10-4 APT1002R/1002R4BN 8 VGS =5.5, 6 & 10V ID, DRAIN CURRENT (AMPERES) ID, DRAIN CURRENT (AMPERES) 8 VGS =10V 6V 6 5.5V 6 4 5V 4 5V 2 4.5V 2 4.5V 0 100 400 200 300 500 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS 16 TJ =-55C ID, DRAIN CURRENT (AMPERES) 12 VDS> I D (ON) x RDS (ON)MAX. 230 SEC. PULSE TEST 0 4V 0 2 4 6 8 10 12 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE 2.5 T = 25C J 0 4V TJ =+25C TJ =+125C 2.0 2 SEC. PULSE TEST NORMALIZED TO V = 10V @ 0.5 I [Cont.] GS D 1.5 VGS =10V VGS =20V 8 1.0 4 TJ =+125C TJ =+25C 0 TJ =-55C 0.5 0 4 2 6 8 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS 8 ID, DRAIN CURRENT (AMPERES) 0.0 0 20 4 12 16 8 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT BVDSS(ON), DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED) VGS(TH), THRESHOLD VOLTAGE (NORMALIZED) 1.2 6 APT1002RBN 1.1 APT1002R4BN 4 1.0 0.9 2 0.8 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) 2.5 I = 0.5 I [Cont.] D D 0 25 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 1.4 0.7 -50 V GS = 10V 2.0 1.2 1.5 1.0 1.0 0.8 0.5 0.6 050-0009 Rev B 0.0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE 0.4 -50 -25 APT1002R/1002R4BN 60 APT1002RBN 10,000 10S 100S C, CAPACITANCE (pF) C iss 1,000 APT1002R4BN OPERATION HERE LIMITED BY R (ON) DS ID, DRAIN CURRENT (AMPERES) 10 APT1002RBN APT1002R4BN 1mS C oss 100 Crss 1 TC =+25C TJ =+150C SINGLE PULSE .1 10mS 100mS DC APT1002R/1002R4BN 1 5 10 50 100 1000 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 20 I = I [Cont.] D D 0 10 20 30 40 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE IDR, REVERSE DRAIN CURRENT (AMPERES) 100 50 10 16 VDS=100V VDS=200V 20 TJ =+150C 10 5 TJ =+25C 12 VDS =500V 8 4 2 1 20 40 60 80 100 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE 0 0 0 .5 1.0 1.5 2.0 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE TO-247AD Package Outline 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 6.15 (.242) BSC 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244) Drain 20.80 (.819) 21.46 (.845) 3.55 (.140) 3.81 (.150) 4.50 (.177) Max. 0.40 (.016) 0.79 (.031) 2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084) 19.81 (.780) 20.32 (.800) 1.01 (.040) 1.40 (.055) Gate Drain Source 050-0009 Rev B 2.21 (.087) 2.59 (.102) 5.45 (.215) BSC 2-Plcs. Dimensions in Millimeters and (Inches) |
Price & Availability of APT1002R4BN
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