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| D TO-247 G S APT1001R1BN 1000V 10.5A 1.10 (R) POWER MOS IV MAXIMUM RATINGS Symbol VDSS ID IDM VGS PD TJ,TSTG TL Parameter Drain-Source Voltage APT1001R3BN 1000V 10.0A 1.30 N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS All Ratings: TC = 25C unless otherwise specified. APT 1001RBN APT 1001R3BN UNIT Volts Amps 1000 10.5 42 30 310 2.48 1000 10 40 Continuous Drain Current @ TC = 25C Pulsed Drain Current Gate-Source Voltage Total Power Dissipation @ TC = 25C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. 1 Volts Watts W/C C -55 to 150 300 STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS Characteristic / Test Conditions / Part Number Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 A) On State Drain Current 2 MIN APT1001R1BN APT1001R3BN APT1001R1BN APT1001R3BN APT1001R1BN APT1001R3BN TYP MAX UNIT Volts 1000 1000 10.5 Amps ID(ON) (VDS > I D(ON) x R DS(ON) Max, VGS = 10V) Drain-Source On-State Resistance (VGS = 10V, 0.5 ID [Cont.]) Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) 2 10 1.10 Ohms RDS(ON) 1.30 250 1000 100 2 4 A nA Volts IDSS IGSS VGS(TH) Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125C) Gate-Source Leakage Current (VGS = 30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 1.0mA) THERMAL CHARACTERISTICS Symbol RJC RJA Characteristic Junction to Case Junction to Ambient MIN TYP MAX UNIT C/W 050-0007 Rev C 0.40 40 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. USA 405 S.W. Columbia Street Bend, Oregon 97702 -1035 F-33700 Merignac - France Phone: (541) 382-8028 Phone: (33) 5 57 92 15 15 FAX: (541) 388-0364 FAX: (33) 5 56 47 97 61 EUROPE Avenue J.F. Kennedy Bat B4 Parc Cadera Nord DYNAMIC CHARACTERISTICS Symbol Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 3 APT1001R1/1001R3BN Test Conditions VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 0.5 VDSS ID = ID [Cont.] @ 25C VGS = 15V VDD = 0.5 VDSS ID = ID [Cont.] @ 25C RG = 1.8 MIN TYP MAX UNIT 2460 360 105 90 9.3 47 15 16 64 24 2950 500 160 130 14 70 30 32 95 48 ns nC pF Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol IS ISM VSD t rr Q rr Characteristic / Test Conditions / Part Number Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage 1 MIN APT1001R1BN APT1001R3BN APT1001R1BN APT1001R3BN TYP MAX UNIT 10.5 10 42 40 1.3 636 4.5 1200 11 Volts ns C Amps 2 (VGS = 0V, IS = -ID [Cont.]) Reverse Recovery Time (IS = -ID [Cont.], dl S/dt = 100A/s) Reverse Recovery Charge (IS = -ID [Cont.], dl S/dt = 100A/s) SAFE OPERATING AREA CHARACTERISTICS Symbol SOA1 SOA2 ILM Characteristic Safe Operating Area Safe Operating Area Inductive Current Clamped Test Conditions / Part Number VDS = 0.4 VDSS, IDS = PD / 0.4 VDSS, t = 1 Sec. IDS = ID [Cont.], VDS = PD / ID [Cont.], t = 1 Sec. APT1001R1BN APT1001R3BN MIN TYP MAX UNIT Watts 310 310 42 40 Amps 1 Repetitive Rating: Pulse width limited by maximum junction temperature. See Transient Thermal Impedance Curve. (Fig.1) 2 Pulse Test: Pulse width < 380 S, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 APT Reserves the right to change, without notice, the specifications and information contained herein. 1.0 , THERMAL IMPEDANCE (C/W) 0.5 D=0.5 0.1 0.05 0.2 0.1 0.05 0.01 0.005 SINGLE PULSE 0.001 10-5 PDM 0.02 0.01 Note: t1 t2 2 Peak TJ = PDM x ZJC + TC Duty Factor D = t1/t 050-0007 Rev C Z JC 10-3 10-2 10-1 1.0 10 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 10-4 APT1001R1/1001R3BN 16 ID, DRAIN CURRENT (AMPERES) V =10V GS ID, DRAIN CURRENT (AMPERES) 6V 12 5.5V 8 5V 4 4.5V 4V 0 100 200 300 400 500 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS 20 T = -55C J ID, DRAIN CURRENT (AMPERES) 16 V > I (ON) x R (ON)MAX. DS D DS 230 SEC. PULSE TEST 16 V 12 =10V GS 6V 5.5V 8 5V 4 4.5V 4V 0 4 8 12 16 20 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE 2.5 T = 25C J 0 0 T = +25C J T = +125C J 2 SEC. PULSE TEST NORMALIZED TO 2.0 V GS = 10V @ 0.5 I [Cont.] D 12 1.5 V =10V GS V =20V GS 8 1.0 4 T = +125C J T = +25C J T = -55C J 0.5 0 2 4 6 8 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS 12 ID, DRAIN CURRENT (AMPERES) 10 APT1001R1BN APT1001R3BN 0 0.0 0 6 12 18 24 30 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT BVDSS(ON), DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED) VGS(TH), THRESHOLD VOLTAGE (NORMALIZED) 1.2 1.1 8 6 4 2 0 1.0 0.9 0.8 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) 2.5 I = 0.5 I [Cont.] D D 25 0.7 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 1.4 V GS = 10V 2.0 1.2 1.5 1.0 1.0 0.8 0.5 0.6 050-0007 Rev C 0.0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE 0.4 -50 -25 APT1001R1/1001R3BN 60 ID, DRAIN CURRENT (AMPERES) APT1001R1BN APT1001R3BN OPERATION HERE LIMITED BY R (ON) DS 10,000 10S C C, CAPACITANCE (pF) 100S iss APT1001R1BN 10 APT1001R3BN 1,000 C oss 1mS 10mS 1 T T C =+25C 100mS DC =+150C J SINGLE PULSE .1 100 C rss APT1001R1/1001R3BN 1 5 10 50 100 1000 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA I = I [Cont.] D D 0 10 20 30 40 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE IDR, REVERSE DRAIN CURRENT (AMPERES) 100 50 10 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 20 16 V V =100V DS 12 =200V DS V =500V DS 20 10 5 T = +150C J T = +25C J 8 4 2 1 40 80 120 160 200 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE 0 0 0 .5 1.0 1.5 2.0 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE TO-247AD Package Outline 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 6.15 (.242) BSC 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244) Drain 20.80 (.819) 21.46 (.845) 3.55 (.140) 3.81 (.150) 4.50 (.177) Max. 0.40 (.016) 0.79 (.031) 2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084) 19.81 (.780) 20.32 (.800) 1.01 (.040) 1.40 (.055) Gate Drain Source 050-0007 Rev C 2.21 (.087) 2.59 (.102) 5.45 (.215) BSC 2-Plcs. Dimensions in Millimeters and (Inches) |
Price & Availability of APT1001R1BN
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