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| GL4800 GL4800 s Features 1. Thin type ( Thickness : 1.5mm ) 2. Beam angle ( : TYP. 30 ) 3. Radiant flux ( e : MIN. 0.7mW at I F = 20mA ) 4. Epoxy resin package Thin Type Infrared Emitting Diode s Outline Dimensions Rest of gate 0.3 MAX. 3.0 0.2 1.6 1.0 2 - C0.5 0.8 ( Unit : mm ) 1.5 0.2 0.8 Pink transparent epoxy resin Protruded resin 1.7 0.8 3.5 0.2 0.7 s Applications 1. Floppy disk drives 2. Optoelectronic switches MIN.0.5 17.5 0.5 2 - 0.9 1.8 2 - 0.45 0.8 1 2 1 Anode 2 Cathode 2.54 0.25 1 2 s Absolute Maximum Ratings Parameter Power dissipation Forward current *1 Peak forward current Reverse voltage Operating temperature Storage temperature *2 Soldering temperature Symbol P IF I FM VR T opr T stg T sol Rating 75 50 1 6 - 25 to + 85 - 40 to + 85 260 ( Ta = 25C ) Unit mW mA A V C C C *1 Pulse width<=100 s, Duty ratio= 0.01 *2 For 3 seconds at the position of 1.8mm from the surface of resin edge. s Electro-optical Characteristics Parameter Forward voltage Peak forward voltage Reverse current Terminal capacitance Frequency response Radiant flux Peak emission wavelength Half intensity wavelength Symbol VF V FM IR Ct fc e p Conditions IF = 20mA IFM = 0.5A VR = 3V VR = 0, f = 1MHz IF = 20mA IF = 5mA IF = 5mA MIN. 0.7 TYP. 1.2 3.0 70 300 1.6 950 45 ( Ta = 25C ) MAX. 1.4 4.0 10 3.0 Unit V V A pF kHz mW nm nm " In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device. " GL4800 Fig. 1 Forward Current vs. Ambient Temperature 60 Fig. 2 Peak Forward Current vs. Duty Ratio 10000 5000 Peak forward current I FM ( mA ) Pulse width <=100 s T a = 25C 50 Forward current I F ( mA ) 2000 1000 500 200 100 50 20 40 30 20 10 0 - 25 0 25 50 75 85 100 10 10 -3 2 5 10 - 2 2 5 10 - 1 2 5 1 Ambient temperature T a ( C ) Duty ratio Fig. 3 Spectral Distribution 100 I F = 5mA T a = 25C Relative radiant intensity ( % ) 80 Fig. 4 Peak Emission Wavelength vs. Ambient Temperature 1000 I F = const. Peak emission wavelength P ( nm ) 975 60 950 40 925 20 0 880 900 920 940 960 980 1000 1020 1040 900 - 25 0 25 50 75 100 Wavelength ( nm ) Ambient temperature T a ( C ) Fig. 5 Forward Current vs. Forward Voltage 500 T a = 75C 200 Forward current I F ( mA ) 100 50 20 10 5 2 50C 25C 0C - 20C Fig. 6 Relative Radiant Flux vs. Ambient Temperature 20 10 Relative radiant flux 5 2 1 0.5 0.2 IF = const. 1 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0.1 - 25 0 25 50 75 100 Forward voltage VF ( V ) Ambient temperature T a ( C ) GL4800 Fig. 7 Radiant Flux vs. Forward Current 10 T a = 25C 5 ( mW ) 2 1 0.5 0.2 0.1 0.05 0.02 0.01 1 10 100 1000 Forward current I F ( mA ) 0.1 0.1 1 10 100 Distance to detector d ( mm ) DC Pulse (Pulse width <=100 s) Fig. 8 Relative Radiant Intensity vs. Distance 100 T a = 25C Relative radiant intensity ( % ) 10 Radiant flux e 1 Fig. 9 Relative Collector Current vs. ( Detector : PT4800 ) Distance 100 I F = 20mA T a = 25C Fig.10 Radiation Diagram - 20 - 10 0 100 - 30 Relative radiant intensity ( % ) 80 ( Ta = 25C ) + 10 + 20 + 30 Relative collector current ( % ) 10 - 40 60 + 40 - 50 1 - 60 - 70 - 80 0.1 0.1 1 10 100 Distance to detector d ( mm) - 90 40 + 50 + 60 20 + 70 + 80 + 90 0 Angular displacement q Please refer to the chapter " Precautions for Use." |
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