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| SOT223 PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ISSUE 3 - OCTOBER 1995 FEATURES * 200 Volt VCEO * Gain of 250 at IC=0.3 Amps * Very low saturation voltage APPLICATIONS * Battery powered circuits COMPLEMENTARY TYPE FZT696B PARTMARKING DETAIL FZT796A FZT796A C E C B SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg VALUE -200 -200 -5 -1 -0.5 2 -55 to +150 UNIT V V V A A W C ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb=25C Operating and Storage Temperature Range PARAMETER ELECTRICAL CHARACTERISTICS (at Tamb = 25C) Breakdown Voltage Collector-Base Collector-Emitter Emitter-Base Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO VCE(sat) -200 -200 -5 SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. V V V -0.1 -0.1 -0.2 -0.3 -0.3 -0.95 -0.67 300 300 250 100 100 225 12 100 3200 800 A A IC=-100A IC=-10mA* IE=-100A VCB=-150V VEB=-4V IC=-50mA, IB=-2mA* IC=-100mA, IB=-5mA* IC=-200mA, IB=-20mA* IC=-200mA,IB=-20mA* IC=-200mA,VCE=-10V* IC=-10mA, VCE=-10V* IC=-100mA, VCE=-10V* IC=-300mA, VCE=-10V* IC=-400mA, VCE=-10V* V V V V V Base-EmitterSaturationVoltage VBE(sat) Base-EmitterTurn-OnVoltage Static Forward Current Transfer Ratio Transition Frequency Input Capacitance Output Capacitance Switching Times VBE(on) hFE fT Cibo Cobo ton toff MHz pF pF ns ns IC=-50mA, VCE=-5V f=50MHz VEB=-0.5V, f=1MHz VCB=-10V, f=1MHz IC=-100mA, IB1=-10mA IB2=-10mA, VCC=-50V *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% Spice parameter data is available upon request for this device 3 - 255 FZT796A TYPICAL CHARACTERISTICS 1.8 1.6 - (Volts) 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.001 IC/IB=40 IC/IB=20 IC/IB=10 Tamb=25C 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.001 -55C +25C +100C +175C IC/IB=20 V 0.01 0.1 1 10 V - (Volts) IC - Collector Current (Amps) 0.01 0.1 1 I+ - Collector Current (Amps) 10 - Normalised Gain 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 +100C +25C -55C VCE=10V 750 1.6 1.4 -55C +25C +100C +175C IC/IB=10 - Typical Gain 500 250 - (Volts) V 1.2 1.0 0.8 0.6 0.4 0.2 0 h 0.01 0.1 1 10 h 0.01 0.1 1 10 I+ - Collector Current (Amps) I+ - Collector Current (Amps) 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 I+ -Collector Current (A) -55C +25C +100C VCE=10V 1 - (Volts) 0.1 DC 1s 100ms 10ms 1ms 100s 0.01 V 0.01 0.1 1 10 0.001 1 10 100 VCE - Collector Emitter Voltage (V) 1000 I+ - Collector Current (Amps) Safe Operating Area 3 - 256 |
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