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| SM-8 DUAL N-CHANNEL ENHANCEMENT MODE MOSFETS ISSUE 1 - NOVEMBER 1995 ZDM4306N D1 D1 D2 D2 PARTMARKING DETAIL - M4306N G1 S1 G2 S2 SM-8 (8 LEAD SOT223) ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at Tamb=25C Pulsed Drain Current Gate-Source Voltage Operating and Storage Temperature Range SYMBOL VDS ID IDM VGS Tj:Tstg VALUE 60 2 15 20 -55 to +150 UNIT V A A V C THERMAL CHARACTERISTICS PARAMETER Total Power Dissipation at Tamb = 25C* Any single die "on" Both die "on" equally Derate above 25C* Any single die "on" Both die "on" equally Thermal Resistance - Junction to Ambient* Any single die "on" Both die "on" equally SYMBOL Ptot 2.5 3.0 20 24 50.0 41.6 W W mW/ C mW/ C C/ W C/ W VALUE UNIT * The power which can be dissipated assuming the device is mounted in a typical manner on a PCB with copper equal to 2 inches square. Note: This data is derived from development material and does not necessarily mean that the device will go into production 3 - 321 ZDM4306N ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). PARAMETER Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current(1) Static Drain-Source On-State Resistance (1) Forward Transconductance (1)(2) Input Capacitance (2) SYMBOL MIN. BVDSS VGS(th) IGSS IDSS ID(on) RDS(on) gfs Ciss 700 12 60 TYP. MAX. UNIT CONDITIONS. V ID=1mA, VGS=0V ID=1mA, VDS= VGS VGS= 20V, VDS=0V VDS=60V, VGS=0 VDS=48V, VGS=0V, T=125C(2) VDS=10V, VGS=10V VGS=10V,ID=3A VGS=5V, ID=1.5A VDS=25V,ID=3A 1.3 3 V 100 10 100 nA A A A mS 0.22 0.32 0.33 0.45 350 140 pF pF VDS=25 V, VGS=0V, f=1MHz Common Source Output Coss Capacitance (2) Reverse Transfer Capacitance (2) Turn-On Delay Time (2)(3) Rise Time (2)(3) Turn-Off Delay Time (2)(3) Fall Time (2)(3) Crss td(on) tr td(off) tf 30 pF 8 ns VDD 25V, VGEN=10V, ID=3A 25 30 ns ns 16 ns 1) Measured under pulsed conditions. Width=300s. Duty cycle 2% (2) Sample test. (3) Switching times measured with 50 source impedance and <5ns rise time on a pulse generator 3 - 322 ZDM4306N TYPICAL CHARACTERISTICS 12 11 7V VGS= 20V 12V 10V 9V 8V VGS=3V 10 3.5V 5V 6V ID - Drain Current (Amps) 10 9 8 7 6 5 4 3 2 1 0 0 1 2 3 4 5 6 7 8 9 6V RDS(on)-Drain Source On Resistance () 1.0 5V 8V 10V 4V 3.5V 3V 10 0.1 0.1 1 10 100 VDS - Drain Source Voltage (Volts) ID-Drain Current (Amps) Saturation Characteristics On-resistance v drain current 2.6 Normalised RDS(on) and VGS(th) 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 -50 -25 n) (o DS gfs-Transconductance (S) VGS=10V ID=3A 5 4 3 2 1 0 0 2 4 6 8 10 12 14 16 18 20 VDS=10V es eR rc ou -S ain Dr a ist eR nc VGS=VDS ID=1mA Gate Threshold Voltage VGS(TH) 0 25 50 75 100 125 150 175 200 225 Tj-Junction Temperature (C) ID(on)- Drain Current (Amps) Normalised RDS(on) and VGS(th) v Temperature Transconductance v drain current VGS-Gate Source Voltage (Volts) 500 400 300 200 100 0 0 10 20 30 40 50 Ciss 16 14 12 10 8 6 4 2 0 0 1 2 3 4 5 6 7 8 ID=3A VDD= 20V 40V 60V C-Capacitance (pF) Coss Crss 60 70 80 9 10 11 12 VDS-Drain Source Voltage (Volts) Q-Charge (nC) Capacitance v drain-source voltage Gate charge v gate-source voltage 3 - 323 |
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