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| AM82731-025 .LOW .REFRACTORY/ .EMI .3: .LOW .I .OVERLAY .METAL/ .P DESCRIPTION RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS PARASITIC, DOUBLE LEVEL METAL DESIGN G OLD METALLIZATION T TER SITE BALLASTED 1 VSWR @ 1 dB OVERDRIVE RF THERMAL RESISTANCE NPUT/OUTPUT IMPEDANCE MATCHING GEOMETRY C ERAMIC HERMETIC PACKAGE OUT = 25 W MIN. WITH 6.2 dB GAIN .400 x .400 2LFL (S036) hermetically sealed ORDER CODE AM82731-025 BRANDING 82731-25 The AM82731-025 device is a high power silicon bipolar NPN transistor specifically designed for S-Band radar pulsed output and driver applications. This device is capable of operation over a wide range of pulse widths, duty cycles, and temperatures and can withstand a 3:1 output VSWR with a +1dB input over drive. Low RF thermal resistance, refractory/gold metallization, and automatic wire bonding techniques ensure high reliability and product consistency (including phase characteristics). The AM82731-025 is supplied in the Hermetic Metal/Ceramic package with internal Input/Output impedance matching circuitry, and is intended for military and other high reliability applications. ABSOLUTE MAXIMUM RATINGS (T case = 25 C) Symbol Parameter PIN CONNECTION 1. Collector 2. Base 3. Emitter 4. Base Value Unit PDISS Ic VCC TJ T STG Power Dissipation* Device Current* (TC 50C) 100 4 46 250 - 65 to +200 W A V C C Collector-Supply Voltage* Junction Temperature (Pulsed RF Operation) Storage Temperature THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance* 2.0 C/W *Applies only to rated RF amplifier operation August 1992 1/4 AM82731-025 ELECTRICAL SPECIFICATIONS (T case = 25 C) STATIC Valu e Symbol Test Conditions Min. Typ. Max. Unit BV CBO BV EBO BV CER ICES hFE IC = 15mA IE = 2mA IC = 15mA VCE = 0V VCE = 5V IE = 0mA IC = 0mA RBE = 10 VBE = 40V IC = 1.5A 55 3.5 55 -- 30 -- -- -- -- -- -- -- -- 10 -- V V V mA -- DYNAMIC Valu e Symbol Test Conditions Min. Typ. Max. Unit POUT c GPB Note: f = 2.7 -- 3.1GHz f = 2.7 -- 3.1GHz f = 2.7 -- 3.1GHz = = 100 10% PIN = 6.0W PIN = 6.0W PIN = 6.0W VCC = 40V VCC = 40V VCC = 40V 25 30 6.2 30 36 7.0 -- -- -- W % dB Pul se Widt h Duty Cycle Sec TYPICAL PERFORMANCE TYPICAL BROADBAND PERFORMANCE 2/4 AM82731-025 IMPEDANCE DATA TYPICAL INPUT IMPEDANCES ZIN TYPICAL COLLECTOR LOAD IMPEDANCES ZCL FREQ. L = 2.7 GHz * = 2.8 GHz M = 2.9 GHz * = 3.0 GHz H = 3.1 GHz ZIN() 12.0 + j 3.0 9.5 + j 2.5 6.5 + j 0.0 6.0 -j 1.5 5.0 -j 3.0 ZCL() 15.0 - j 4.0 17.0 - j 3.0 15.5 - j 3.0 14.5 - j 3.0 11.0 - j 3.0 PIN = 6.0 W VCC = 40 V Normalized to 50 ohms TEST CIRCUIT All dimensions are in inches. Sustrate material: .025 thick Al2O3 (Er = 9.6) C1 C2 : 22 pF Chip Capacitor : 1500 pF RF Feedthrough L1 L2 : No. 26 Wire, 2 Turn, 0.08 Inch I.D. : No. 26 Wire, 2 Turn, 0.08 Inch I.D. 3/4 AM82731-025 PACKAGE MECHANICAL DATA Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use ascritical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. (c) 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A 4/4 |
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