View SGH20N120RUFD_243959.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

SGH20N120RUFD
IGBT
SGH20N120RUFD
Short Circuit Rated IGBT
General Description
Fairchild's RUFD series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses as well as short circuit ruggedness. The RUFD series is designed for applications such as motor control, uninterrupted power supplies (UPS) and general inverters where short circuit ruggedness is a required feature.
Features
* * * * * Short circuit rated 10s @ TC = 100C, VGE = 15V High speed switching Low saturation voltage : VCE(sat) = 2.3 V @ IC = 20A High input impedance CO-PAK, IGBT with FRD : trr = 80ns (typ.)
Applications
AC & DC motor controls, general purpose inverters, robotics, and servo controls.
C
G
TO-3P
GCE
E
TC = 25C unless otherwise noted
Absolute Maximum Ratings
Symbol VCES VGES IC ICM (1) IF IFM TSC PD TJ Tstg TL
Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Collector Current Pulsed Collector Current Diode Continuous Forward Current Diode Maximum Forward Current Short Circuit Withstand Time Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for soldering Purposes, 1/8" from case for 5 seconds
@ TC = 25C @ TC = 100C @ TC = 100C @ TC = 100C @ TC = 25C @ TC = 100C
SGH20N120RUFD 1200 25 32 20 60 20 120 10 230 92 -55 to +150 -55 to +150 300
Units V V A A A A A s W W C C C
Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol RJC(IGBT) RJC(DIODE) RJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Typ. ---Max. 0.54 0.84 40 Units C/W C/W C/W
(c)2002 Fairchild Semiconductor Corporation
SGH20N120RUFD Rev. B2
SGH20N120RUFD
Electrical Characteristics of the IGBT T
Symbol Parameter
C
= 25C unless otherwise noted
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BVCES BVCES/ TJ ICES IGES Collector-Emitter Breakdown Voltage Temperature Coefficient of Breakdown Voltage Collector Cut-Off Current G-E Leakage Current VGE = 0V, IC = 1mA VGE = 0V, IC = 1mA VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V 1200 ----0.6 ----1 100 V V/C mA nA
On Characteristics
VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage IC = 20mA, VCE = VGE IC = 20A, VGE = 15V IC = 32A, VGE = 15V 3.5 --5.5 2.3 2.8 7.5 3.0 -V V V
Dynamic Characteristics
Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance VCE = 30V, VGE = 0V, f = 1MHz ---2000 170 60 ---pF pF pF
Switching Characteristics
td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Eon Eoff Ets Tsc Qg Qge Qgc Le Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Short Circuit Withstand Time Total Gate Charge Gate-Emitter Charge Gate-Collector Charge Internal Emitter Inductance --------------10 ----30 60 70 150 1.30 1.30 2.60 30 70 90 200 1.50 2.00 3.50 -95 15 43 14 --130 300 --3.65 --165 400 --5.08 -140 25 65 -ns ns ns ns mJ mJ mJ ns ns ns ns mJ mJ mJ s nC nC nC nH
VCC = 600 V, IC = 20A, RG = 15, VGE = 15V, Inductive Load, TC = 25C
VCC = 600 V, IC = 20A, RG = 15, VGE = 15V, Inductive Load, TC = 125C
@ TC =
VCC = 600 V, VGE = 15V 100C
VCE = 600 V, IC = 20A, VGE = 15V Measured 5mm from PKG
Electrical Characteristics of DIODE T
Symbol VFM trr Irr Qrr Parameter Diode Forward Voltage Diode Reverse Recovery Time Diode Peak Reverse Recovery Current Diode Reverse Recovery Charge
C
= 25C unless otherwise noted
Test Conditions TC = 25C IF = 20A TC = 100C TC = 25C TC = 100C IF = 20A dI/dt = 200 A/s TC = 25C TC = 100C TC = 25C TC = 100C
Min. ---------
Typ. 2.8 2.5 80 95 8.0 9.5 320 450
Max. 3.5 -110 -10.0 -500 --
Units V ns A nC
(c)2002 Fairchild Semiconductor Corporation
SGH20N120RUFD Rev. B2
SGH20N120RUFD
140 TC = 25 120 20V
17V 15V
100 Common Emitter VGE = 15V TC = 25 TC = 125
80
Collector Current, IC [A]
Collector Current, IC [A]
100 80 60 40 VGE = 10V 20 0 0 2 4 6 8 10 12V
60
40
20
0 0 2 4 6 8 10
Collector - Emitter Voltage, VCE [V]
Collector - Emitter Voltage, VCE [V]
Fig 1. Typical Output Characteristics
Fig 2. Typical Saturation Voltage Characteristics
3.2 3.0 2.8 2.6 2.4 2.2 2.0 1.8 25 50 75 100 125 150 Common Emitter VGE = 15V 32A
40 VCC = 600V Load Current : peak of square wave 30
Collector - Emitter Voltage, VCE [V]
Load Current [A]
20
IC = 20A
10 Duty cycle : 50% T C = 100 Power Dissipation = 45W 0 0.1 1 10 100 1000
Case Temperature, TC []
Frequency [KHz]
Fig 3. Saturation Voltage vs. Case Temperature at Variant Current Level
Fig 4. Load Current vs. Frequency
20 Common Emitter T C = 25
20 Common Emitter T C = 125 16
Collector - Emitter Voltage, V [V] CE
16
12
Collector - Emitter Voltage, VCE [V]
12
8
8 40A 4 20A I C = 10A 0
40A 4 20A IC = 10A 0 0 4 8 12 16 20
0
4
8
12
16
20
Gate - Emitter Voltage, V GE [V]
Gate - Emitter Voltage, V GE [V]
Fig 5. Saturation Voltage vs. VGE
(c)2002 Fairchild Semiconductor Corporation
Fig 6. Saturation Voltage vs. VGE
SGH20N120RUFD Rev. B2
SGH20N120RUFD
3000 Common Emitter VGE = 0V, f = 1MHz TC = 25
2500
Capacitance [pF]
2000
Cies
Switching Time [ns]
Common Emitter VCC = 600V, VGE = 15V IC = 20A TC = 25 TC = 125 100
tr
1500
td(on)
1000
500
Coes Cres
0 1 10
10 10 100
Collector - Emitter Voltage, VCE [V]
Gate Resistance, RG []
Fig 7. Capacitance Characteristics
Fig 8. Turn-On Characteristics vs. Gate Resistance
Switching Time [ns]
Switching Loss [J]
Common Emitter VCC = 600V, VGE = 15V IC = 20A T C = 25 T C = 125
td(off)
Common Emitter VCC = 600V, VGE = 15V IC = 20A T C = 25 T C = 125 Eon Eoff
tf 100
Eoff 1000
10
100
10
100
Gate Resistance, RG []
Gate Resistance, RG []
Fig 9. Turn-Off Characteristics vs. Gate Resistance
Fig 10. Switching Loss vs. Gate Resistance
Common Emitter VGE = 15V, RG = 15 TC = 25 TC = 125 tr
Common Emitter VGE = 15V, RG = 15 TC = 25 TC = 125
Switching Time [ns]
Switchig Time [ns]
100
tf
100 td(off)
td(on)
10 10 15 20 25 30 35 40 10 15 20 25 30 35 40
Collector Current, IC [A]
Collector Current, IC [A]
Fig 11. Turn-On Characteristics vs. Collector Current
(c)2002 Fairchild Semiconductor Corporation
Fig 12. Turn-Off Characteristics vs. Collector Current
SGH20N120RUFD Rev. B2
SGH20N120RUFD
16
Gate - Emitter Voltage, VGE [V]
Common Emitter VGE = 15V, RG = 15 TC = 25 TC = 125
Eoff Eon Eoff
14 12 10 8 6 4 2 0
Common Emitter RL = 30 TC = 25 600V
Switching Loss [J]
400V
1000
VCC = 200V
10
15
20
25
30
35
40
0
20
40
60
80
100
Collector Current, I C [A]
Gate Charge, Qg [nC]
Fig 13. Switching Loss vs. Collector Current
Fig 14. Gate Charge Characteristics
100 IC MAX. (Pulsed) 100s 10 IC MAX. (Continuous) 50s
100
DC Operation 1
Collector Current, I C [A]
Collector Current, I C [A]
1ms
10
0.1
Single Nonrepetitive Pulse T C = 25 Curves must be derated linearly with increase in temperature 0.1 1 10 100 1000
0.01
1 1
Safe Operating Area VGE = 20V, TC = 100 10 100 1000
Collector - Emitter Voltage, V CE [V]
Collector - Emitter Voltage, VCE [V]
Fig 15. SOA Characteristics
Fig 16. Turn-Off SOA
10
Thermal Response [Zthjc]
1 0.5 0.2 0.1 0.1 0.05 0.01 0.02 0.01 single pulse 1E-3 10
-5
Pdm t1 t2 Duty factor D = t1 / t2 Peak Tj = Pdm x Zthjc + TC
10
-4
10
-3
10
-2
10
-1
10
0
10
1
Rectangular Pulse Duration [sec]
Fig 17. Transient Thermal Impedance of IGBT
(c)2002 Fairchild Semiconductor Corporation SGH20N120RUFD Rev. B2
SGH20N120RUFD
100
25 VR = 200V IF = 20A TC = 25 TC = 100
Reverse Recovery Current, Irr [A]
6
20
Forward Current, IF [A]
10
15
10
1
5
T C = 25 T C = 100 0.1 0 2 4
0 100
500
Forward Voltage Drop, VFM [V]
di/dt [A/s]
Fig 18. Forward Characteristics
Fig 19. Reverse Recovery Current
1000 VR = 200V IF = 20A T C = 25 T C = 100
160 VR = 200V IF = 20A TC = 25 TC = 100
Stored Recovery Charge, Qrr [nC]
800
Reverse Recovery Time, trr [ns]
500
140
600
120
400
100
200
80
0 100
60 100
500
di/dt [A/s]
di/dt [A/s]
Fig 20. Stored Charge
Fig 21. Reverse Recovery Time
(c)2002 Fairchild Semiconductor Corporation
SGH20N120RUFD Rev. B2
SGH20N120RUFD
Package Dimension
TO-3P (FS PKG CODE AF)
15.60 0.20 3.80 0.20 13.60 0.20 o3.20 0.10 9.60 0.20 4.80 0.20 1.50 -0.05
+0.15
12.76 0.20
19.90 0.20
16.50 0.30
3.00 0.20 1.00 0.20
3.50 0.20
2.00 0.20
13.90 0.20
23.40 0.20
18.70 0.20
1.40 0.20
5.45TYP [5.45 0.30]
5.45TYP [5.45 0.30]
0.60 -0.05
+0.15
Dimensions in Millimeters
(c)2002 Fairchild Semiconductor Corporation SGH20N120RUFD Rev. B2
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DenseTrenchTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM
FAST(R) FASTrTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM I2CTM ISOPLANARTM LittleFETTM MicroFETTM MicroPakTM
MICROWIRETM OPTOLOGICTM OPTOPLANARTM PACMANTM POPTM Power247TM PowerTrench(R) QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM
SLIENT SWITCHER(R) SMART STARTTM SMPTM STAR*POWERTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM TruTranslationTM
UHCTM UltraFET(R) VCXTM
STAR*POWER is used under license
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems 2. A critical component is any component of a life support which, (a) are intended for surgical implant into the body, device or system whose failure to perform can be or (b) support or sustain life, or (c) whose failure to perform reasonably expected to cause the failure of the life support when properly used in accordance with instructions for use device or system, or to affect its safety or effectiveness. provided in the labeling, can be reasonably expected to result in significant injury to the user.
PRODUCT STATUS DEFINITIONS Definition of Terms
Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
(c)2002 Fairchild Semiconductor Corporation
Rev. H5

▲Up To Search▲

Price & Availability of SGH20N120RUFD

	To Download SGH20N120RUFD Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .