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| MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA07H4047M BLOCK DIAGRAM 2 3 400-470MHz 7W 12.5V, 2 Stage Amp. For PORTABLE/ MOBILE RADIO DESCRIPTION The RA07H4047M is a 7-watt RF MOSFET Amplifier Module for 12.5-volt portable/ mobile radios that operate in the 400- to 470-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (V GG=0V), only a small leakage current flows into the drain and the RF input signal attenuates up to 60 dB. The output power and drain current increase as the gate voltage increases. With a gate voltage around 2.5V (minimum), output power and drain current increases substantially. The nominal output power becomes available at 3V (typical) and 3.5V (maximum). At VGG=3.5V, the typical gate current is 1 mA. This module is designed for non-linear FM modulation, but may also be used for linear modulation by setting the drain quiescent current with the gate voltage and controlling the output power with the input power. FEATURES * Enhancement-Mode MOSFET Transistors (IDD0 @ VDD=12.5V, VGG=0V) * Pout>7W @ VDD=12.5V, VGG=3.5V, Pin=20mW * T>40% @ Pout=7W (V GG control), VDD=12.5V, Pin=20mW * Broadband Frequency Range: 400-470MHz * Low-Power Control Current IGG=1mA (typ) at VGG=3.5V * Module Size: 30 x 10 x 5.4 mm * Linear operation is possible by setting the quiescent drain current with the gate voltage and controlling the output power with the input power 1 4 5 1 2 3 4 5 RF Input (Pin) Gate Voltage (VGG), Power Control Drain Voltage (VDD), Battery RF Output (Pout) RF Ground (Case) PACKAGE CODE: H46S ORDERING INFORMATION: ORDER NUMBER RA07H4047M-E01 RA07H4047M-01 (Japan - packed without desiccator) SUPPLY FORM Antistatic tray, 25 modules/tray RA07H4047M MITSUBISHI ELECTRIC 1/9 25 April 2003 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS MITSUBISHI RF POWER MODULE RA07H4047M RATING 13.2 4 30 10 -30 to +90 -40 to +110 UNIT V V mW W C C MAXIMUM RATINGS (Tcase=+25C, unless oth erwise specified) SYMBOL VDD VGG Pin Pout Tcase(OP) Tstg PARAMETER Drain Voltage Gate Voltage Input Power Output Power Operation Case Temperature Range Storage Temperature Range CONDITIONS VGG<3.5V VDD<12.5V, Pin=0mW f=400-470MHz, ZG=ZL=50 The above parameters are independently guaranteed. ELECTRICAL CHARACTERISTICS (Tcase=+25C, ZG=ZL=50, unless otherwise specified) SYMBOL PARAMETER f Pout T 2fo in IGG -- -- Frequency Range Output Power Total Efficiency 2 Harmonic Input VSWR Gate Current Stability Load VSWR Tolerance VDD=7.2-15V, Pin=10-30mW, Pout<8W (VGG control), Load VSWR=4:1 VDD=13.2V, Pin=20mW, Pout=7.0W (VGG control), Load VSWR=20:1 nd CONDITIONS MIN 400 TYP MAX 470 UNIT MHz W % VDD=12.5V,VGG=3.5V, Pin=20mW Pout=7W (VGG control), VDD=12.5V, Pin=20mW 7 40 -25 4:1 1 No parasitic oscillation No degradation or destroy dBc -- mA -- -- All parameters, conditions, ratings, and limits are subject to change without notice. RA07H4047M MITSUBISHI ELECTRIC 2/9 25 April 2003 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS MITSUBISHI RF POWER MODULE RA07H4047M rd TYPICAL PERFORMANCE (Tcase=+25C, ZG=ZL=50, unless otherwise specified) OUTPUT POWER, TOTAL EFFICIENCY, and INPUT VSWR versus FREQUENCY 14 out (W) 2nd, 3 HARMONICS versus FREQUENCY -20 140 120 TOTAL EFFICIENCY -30 HARMONICS (dBc) -40 2 nd @Pout=7W in (-) 12 Pout @VGG=3.5V VDD=12.5V Pi n=20mW OUTPUT POWER P 10 8 6 4 2 0 in @Pout=7W T @Pout=7W VDD=12.5V Pin=20mW 100 80 60 40 20 0 INPUT VSWR T (%) -50 -60 390 400 410 420 430 440 450 460 470 480 FREQUENCY f(MHz) 3 @Pout=7W -70 390 400 410 420 430 440 450 460 470 480 FREQUENCY f(MHz) rd OUTPUT POWER, POWER GAIN and DRAIN CURRENT versus INPUT POWER 50 out (dBm) OUTPUT POWER, POWER GAIN and DRAIN CURRENT versus INPUT POWER 10 50 out (dBm) 10 Pout Pout 40 POWER GAIN Gp(dB) 30 20 10 0 -15 Gp 8 DRAIN CURRENT I DD (A) 6 40 POWER GAIN Gp(dB) 30 20 10 0 -15 -10 Gp 8 6 4 IDD 2 0 DRAIN CURRENT DRAIN CURRENT 8 6 Pout OUTPUT POWER P f=400MHz, VDD =12.5V, VGG=3.5V 4 IDD 2 0 OUTPUT POWER P f=430MHz, VDD =12.5V, VGG=3.5V -10 -5 0 5 10 15 20 INPUT POWER Pin(dBm) -5 0 5 10 INPUT POWER Pin (dBm) 15 20 OUTPUT POWER, POWER GAIN and DRAIN CURRENT versus INPUT POWER 50 OUTPUT POWER P out (dBm) POWER GAIN Gp(dB) 40 30 f=450MHz, VDD=12.5V, VGG=3.5V Gp Pout OUTPUT POWER, POWER GAIN and DRAIN CURRENT versus INPUT POWER 10 OUTPUT POWER P out (dBm) POWER GAIN Gp(dB) 8 6 DRAIN CURRENT I DD (A) 50 40 30 20 10 0 -15 -10 -5 0 5 10 INPUT POWER Pin(dBm) 15 20 f=470MHz, VDD=12.5V, VGG=3.5V Gp Pout 10 8 6 4 IDD 2 0 20 10 0 -15 4 IDD 2 0 -10 -5 0 5 10 15 20 INPUT POWER Pin(dBm) OUTPUT POWER and DRAIN CURRENT versus DRAIN VOLTAGE 24 out (W) OUTPUT POWER and DRAIN CURRENT versus DRAIN VOLTAGE 8 out (W) 24 21 18 15 12 9 IDD 6 3 0 2 4 6 8 10 12 DRAIN VOLTAGE VDD (V) 14 16 f=430MHz, VGG=3.5V, Pin =20mW 21 18 15 12 9 6 3 0 2 DD (A) OUTPUT POWER P DRAIN CURRENT I 4 ID D 2 4 2 0 4 6 8 10 12 DRAIN VOLTAGE V D (V) D 14 16 0 RA07H4047M MITSUBISHI ELECTRIC 3/9 DRAIN CURRENT I Pout OUTPUT POWER P DD (A) f=400MHz, VGG=3.5V, Pi n=20mW 6 IDD(A) 25 April 2003 IDD(A) ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS MITSUBISHI RF POWER MODULE RA07H4047M TYPICAL PERFORMANCE (Tcase=+25C, ZG=ZL=50, unless otherwise specified) OUTPUT POWER and DRAIN CURRENT versus DRAIN VOLTAGE 24 out (W) out (W) OUTPUT POWER and DRAIN CURRENT versus DRAIN VOLTAGE 8 24 21 18 15 Pout f=470MHz, VGG=3.5V, Pi n=20mW 21 18 15 12 9 6 3 0 2 f=450MHz, VGG=3.5V, Pi n=20mW 8 DD (A) OUTPUT POWER P DRAIN CURRENT I OUTPUT POWER P Pout 4 IDD 12 9 6 3 0 2 4 6 8 10 12 DRAIN VOLTAGE V D (V) D 14 16 ID D 4 2 2 0 4 6 8 10 12 DRAIN VOLTAGE VDD(V) 14 16 0 OUTPUT POWER and DRAIN CURRENT versus GATE VOLTAGE 16 out (W) OUTPUT POWER and DRAIN CURRENT versus GATE VOLTAGE 8 out (W) 16 14 12 10 8 6 4 2 0 2 2.5 3 3.5 GATE VOLTAGE VGG(V) 4 IDD f=430MHz, VDD =12.5V, Pin=20mW 8 7 Pout DD (A) 14 12 10 8 6 4 2 0 2 OUTPUT POWER P DRAIN CURRENT I OUTPUT POWER P 5 4 ID D 3 2 1 0 2.5 3 3.5 GATE VOLTAGE V V) GG( 4 DD (A) f=400MHz, VDD=12.5V, Pi n=20mW Pout 7 6 6 5 4 3 2 1 0 OUTPUT POWER and DRAIN CURRENT versus GATE VOLTAGE 16 out (W) OUTPUT POWER and DRAIN CURRENT versus GATE VOLTAGE 8 out (W) 16 14 12 10 8 6 4 2 0 2 2.5 3 3.5 GATE VOLTAGE VGG (V) 4 IDD f=470MHz, VDD =12.5V, Pin=20mW Pout 8 7 DD (A) 14 12 10 8 6 f=450MHz, VDD =12.5V, Pi n=20mW Pout 7 DD (A) 6 5 4 3 ID D 2 1 0 6 5 4 3 2 1 0 OUTPUT POWER P DRAIN CURRENT I OUTPUT POWER P 4 2 0 2 2.5 3 3.5 GATE VOLTAGE V V) GG( 4 RA07H4047M MITSUBISHI ELECTRIC 4/9 DRAIN CURRENT I DRAIN CURRENT I DRAIN CURRENT I DD (A) 6 6 25 April 2003 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS MITSUBISHI RF POWER MODULE RA07H4047M OUTLINE DRAWING (mm) 30.0 0.2 (1.7) (4.4) 26.6 0.2 21.2 0.2 2-R1.5 0.1 3.0 0.2 10.0 0.2 6.0 0.2 6.0 0.2 O0.45 0.15 1 6.0 1 2 3 4 6.1 1 13.7 1 18.8 1 23.9 1 3.5 0.2 (5.4) 2.3 0.4 1.5 0.2 3.0 0.2 1 RF Input (P in) 2 Gate Voltage (V GG) 3 Drain Voltage (V DD) 4 RF Output (P out) 5 RF Ground (Case) RA07H4047M MITSUBISHI ELECTRIC 5/9 7.4 0.2 5 25 April 2003 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS MITSUBISHI RF POWER MODULE RA07H4047M TEST BLOCK DIAGRAM Power Meter 1 2 DUT 3 4 5 Spectrum Analyzer Signal Generator Attenuator Preamplifier Attenuator Directional Coupler ZG=50 ZL=50 Directional Coupler Attenuator Power Meter C1 C2 C1, C2: 4700pF, 22uF in parallel + DC Power Supply V GG + DC Power Supply V DD 1 RF Input (P in) 2 Gate Voltage (V GG) 3 Drain Voltage (V DD) 4 RF Output (P out) 5 RF Ground (Case) EQUIVALENT CIRCUIT 2 3 1 4 5 RA07H4047M MITSUBISHI ELECTRIC 6/9 25 April 2003 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS MITSUBISHI RF POWER MODULE RA07H4047M PRECAUTIONS, RECOMMENDATIONS, and APPLICATION INFORMATION: Construction: This module consists of an alumina substrate soldered onto a copper flange. For mechanical protection, a plastic cap is attached with silicone. The MOSFET transistor chips are die bonded onto metal, wire bonded to the substrate, and coated with resin. Lines on the substrate (eventually inductors), chip capacitors, and resistors form the bias and matching circuits. Wire leads soldered onto the alumina substrate provide the DC and RF connection. Following conditions must be avoided: a) Bending forces on the alumina substrate (for example, by driving screws or from fast thermal changes) b) Mechanical stress on the wire leads (for example, by first soldering then driving screws or by thermal expansion) c) Defluxing solvents reacting with the resin coating on the MOSFET chips (for example, Trichlorethylene) d) Frequent on/off switching that causes thermal expansion of the resin e) ESD, surge, overvoltage in combination with load VSWR, and oscillation ESD: This MOSFET module is sensitive to ESD voltages down to 1000V. Appropriate ESD precautions are required. Mounting: Heat sink flatness must be less than 50 m (a heat sink that is not flat or particles between module and heat sink may cause the ceramic substrate in the module to crack by bending forces, either immediately when driving screws or later when thermal expansion forces are added). A thermal compound between module and heat sink is recommended for low thermal contact resistance and to reduce the bending stress on the ceramic substrate caused by the temperature difference to the heat sink. The module must first be screwed to the heat sink, then the leads can be soldered to the printed circuit board. M3 screws are recommended with a tightening torque of 0.4 to 0.6 Nm. Soldering and Defluxing: This module is designed for manual soldering. The leads must be soldered after the module is screwed onto the heat sink. The soldering temperature must be lower than 260C for a maximum of 10 seconds, or lower than 350C for a maximum of three seconds. Ethyl Alcohol is recommend for removing flux. Trichlorethylene solvents must not be used (they may cause bubbles in the coating of the transistor chips which can lift off the bond wires). Thermal Design of the Heat Sink: At Pout=7W, V DD=12.5V and Pin=20mW each stage transistor operating conditions are: Stage 1st 2nd Pin (W) 0.02 1.5 Pout (W) 1.5 7.0 Rth(ch-case) (C/W) 4.5 2.4 IDD @ T =40% (A) 0.25 1.15 VDD (V) 12.5 The channel temperatures of each stage transistor Tch = Tcase + (V DD x IDD - Pout + Pin) x Rth(ch-case) are: Tch1 = Tcase + (12.5V x 0.25A - 1.5W + 0.02W) x 4.5C/W = Tcase + 7.4 C Tch2 = Tcase + (12.5V x 1.15A - 7.0W + 1.5W) x 2.4C/W = Tcase + 21.3 C For long-term reliability, it is best to keep the module case temperature (Tcase) below 90C. For an ambient temperature Tair=60C and Pout=7W, the required thermal resistance Rth (case-air) = ( Tcase - Tair) / ( (P out / T ) - Pout + Pin ) of the heat sink, including the contact resistance, is: Rth(case-air) = (90C - 60C) / (7W/40% - 7W + 0.02W) = 2.85 C/W When mounting the module with the thermal resistance of 2.85 C/W, the channel temperature of each stage transistor is: Tch1 = Tair + 37.4 C Tch2 = Tair + 51.3 C The 175C maximum rating for the channel temperature ensures application under derated conditions. RA07H4047M MITSUBISHI ELECTRIC 7/9 25 April 2003 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS MITSUBISHI RF POWER MODULE RA07H4047M Output Power Control: Depending on linearity, the following two methods are recommended to control the output power: a) Non-linear FM modulation: By the gate voltage (V GG). When the gate voltage is close to zero, the RF input signal is attenuated up to 60 dB and only a small leakage current flows from the battery into the drain. Around VGG=2.5V, the output power and drain current increases substantially. Around VGG=3V (typical) to VGG=3.5V (maximum), the nominal output power becomes available. b) Linear AM modulation: By RF input power Pin. The gate voltage is used to set the drain's quiescent current for the required linearity. Oscillation: To test RF characteristics, this module is put on a fixture with two bias decoupling capacitors each on gate and drain, a 4.700 pF chip capacitor, located close to the module, and a 22 F (or more) electrolytic capacitor. When an amplifier circuit around this module shows oscillation, the following may be checked: a) Do the bias decoupling capacitors have a low inductance pass to the case of the module? b) Is the load impedance ZL=50? c) Is the source impedance ZG=50? Frequent on/off switching: In base stations, frequent on/off switching can cause thermal expansion of the resin that coats the transistor chips and can result in reduced or no output power. The bond wires in the resin will break after long-term thermally induced mechanical stress. Quality: Mitsubishi Electric is not liable for failures resulting from base station operation time or operating conditions exceeding those of mobile radios. This module technology results from more than 20 years of experience, field proven in tens of millions of mobile radios. Currently, most returned modules show failures such as ESD, substrate crack, and transistor burnout, which are caused by improper handling or exceeding recommended operating conditions. Few degradation failures are found. Keep safety first in your circuit designs! Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material, or (iii) prevention against any malfunction or mishap. RA07H4047M MITSUBISHI ELECTRIC 8/9 25 April 2003 SALES CONTACT JAPAN: Mitsubishi Electric Corporation Semiconductor Sales Promotion Department 2-2-3 Marunouchi, Chiyoda-ku Tokyo, Japan 100 Email: Phone: Fax: sod.sophp@hq.melco.co.jp +81-3-3218-4854 +81-3-3218-4861 GERMANY: Mitsubishi Electric Europe B.V. Semiconductor Gothaer Strasse 8 D-40880 Ratingen, Germany Email: Phone: Fax: semis.info@meg.mee.com +49-2102-486-0 +49-2102-486-3670 HONG KONG: Mitsubishi Electric Hong Kong Ltd. Semiconductor Division 41/F. Manulife Tower, 169 Electric Road North Point, Hong Kong Email: Phone: Fax: scdinfo@mehk.com +852 2510-0555 +852 2510-9822 FRANCE: Mitsubishi Electric Europe B.V. Semiconductor 25 Boulevard des Bouvets F-92741 Nanterre Cedex, France Email: Phone: Fax: semis.info@meg.mee.com +33-1-55685-668 +33-1-55685-739 SINGAPORE: Mitsubishi Electric Asia PTE Ltd Semiconductor Division 307 Alexandra Road #3-01/02 Mitsubishi Electric Building, Singapore 159943 Email: Phone: Fax: semicon@asia.meap.com +65 64 732 308 +65 64 738 984 ITALY: Mitsubishi Electric Europe B.V. Semiconductor Centro Direzionale Colleoni, Palazzo Perseo 2, Via Paracelso I-20041 Agrate Brianza, Milano, Italy Email: Phone: Fax: semis.info@meg.mee.com +39-039-6053-10 +39-039-6053-212 TAIWAN: Mitsubishi Electric Taiwan Company, Ltd., Semiconductor Department 9F, No. 88, Sec. 6 Chung Shan N. Road Taipei, Taiwan, R.O.C. Email: Phone: Fax: metwnssi@metwn.meap.com +886-2-2836-5288 +886-2-2833-9793 U.K.: Mitsubishi Electric Europe B.V. Semiconductor Travellers Lane, Hatfield Hertfordshire, AL10 8XB, England Email: Phone: Fax: semis.info@meuk.mee.com +44-1707-278-900 +44-1707-278-837 U.S.A.: Mitsubishi Electric & Electronics USA, Inc. Electronic Device Group 1050 East Arques Avenue Sunnyvale, CA 94085 Email: Phone: Fax: customerservice@edg.mea.com 408-730-5900 408-737-1129 AUSTRALIA: Mitsubishi Electric Australia, Semiconductor Division 348 Victoria Road Rydalmere, NSW 2116 Sydney, Australia Email: semis@meaust.meap.com Phone: +61 2 9684-7210 +61 2 9684 7212 +61 2 9684 7214 +61 3 9262 9898 +61 2 9684-7208 +61 2 9684 7245 CANADA: Mitsubishi Electric Sales Canada, Inc. 4299 14th Avenue Markham, Ontario, Canada L3R OJ2 Phone: Fax: 905-475-7728 905-475-1918 Fax: RA07H4047M MITSUBISHI ELECTRIC 9/9 25 April 2003 |
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