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DISCRETE SEMICONDUCTORS
DATA SHEET
BLF246 VHF power MOS transistor
Product specification Supersedes data of September 1992 1996 Oct 21
Philips Semiconductors
Product specification
VHF power MOS transistor
FEATURES * High power gain * Low noise figure * Easy power control * Good thermal stability * Withstands full load mismatch. APPLICATIONS * Large signal amplifier applications in the VHF frequency range.
handbook, halfpage
BLF246
PINNING - SOT121 PIN 1 2 3 4 SYMBOL d s g s DESCRIPTION drain source gate source
1
4
DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS transistor encapsulated in a 4-lead, SOT121 flange package, with a ceramic cap. All leads are isolated from the flange. A marking code, showing gate-source voltage (VGS) information is provided for matched pair applications. Refer to the General section of Data Handbook SC19a for further information.
2 3
d g s
MAM267
CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against static discharge during transport or handling. QUICK REFERENCE DATA RF performance at Th = 25 C in a common source test circuit. MODE OF OPERATION CW, class-B f (MHz) 108 VDS (V) 28 PL (W) 80 Gp (dB) 16 D (%) 55
Fig.1 Simplified outline and symbol.
WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste.
1996 Oct 21
2
Philips Semiconductors
Product specification
VHF power MOS transistor
LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL VDS VGS ID Ptot Tstg Tj PARAMETER drain-source voltage gate-source voltage DC drain current total power dissipation storage temperature junction temperature up to Tamb = 25 C CONDITIONS - - - - -65 - MIN.
BLF246
MAX. 65 20 13 130 150 200 V V A W
UNIT
C C
THERMAL CHARACTERISTICS SYMBOL Rth j-mb Rth mb-h PARAMETER thermal resistance from junction to mounting base thermal resistance from mounting base to heatsink VALUE 1.35 0.2 UNIT K/W K/W
handbook, halfpage
50
MRA931
handbook, halfpage
200
MGG104
ID (A) 10
(1) (2)
Ptot (W) 150 (2)
100 (1) 1 50
10-1 1 10 VDS (V)
102
0 0 50 100 Th (C) 150
(1) Current is this area may be limited by RDS(on). (2) Tmb = 25 C.
(1) Continuous operation. (2) Short-time operation during mismatch.
Fig.2 DC SOAR.
Fig.3 Power derating curves.
1996 Oct 21
3
Philips Semiconductors
Product specification
VHF power MOS transistor
CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL V(BR)DSS IDSS IGSS VGSth VGS gfs RDSon IDSX Cis Cos Crs PARAMETER drain-source breakdown voltage drain-source leakage current gate-source leakage current gate-source threshold voltage gate-source voltage difference of matched pairs forward transconductance drain-source on-state resistance on-state drain current input capacitance output capacitance feedback capacitance CONDITIONS VGS = 0; ID = 50 mA VGS = 0; VDS = 28 V VGS = 20 V; VDS = 0 ID = 50 mA; VDS = 10 V ID = 50 mA; VDS = 10 V ID = 2.5 A or 5 A; VDS = 10 V ID = 5 A; VGS = 10 V VGS = 10 V; VDS = 10 V VGS = 0; VDS = 28 V; f = 1 MHz VGS = 0; VDS = 28 V; f = 1 MHz VGS = 0; VDS = 28 V; f = 1 MHz MIN. 65 - - 2 - 3 - - - - - TYP. - - - - - 4.2 0.2 22 225 180 25
BLF246
MAX. - 2.5 1 4.5 100 - 0.3 - - - -
UNIT V mA A V mV S A pF pF pF
handbook, halfpage
2
MGG105
handbook, halfpage
40
MGG106
T.C. (mV/K) 0
ID (A) 30
-2
20
-4
10
-6 10-2
10-1
1
ID (A)
10
0 0 5 10 15 VGS (V) 20
VDS = 10 V; valid for Th = 25 to 70 C.
VDS = 10 V; Tj = 25 C.
Fig.4
Temperature coefficient of gate-source voltage as a function of drain current, typical values.
Fig.5
Drain current as a function of gate-source voltage, typical values.
1996 Oct 21
4
Philips Semiconductors
Product specification
VHF power MOS transistor
BLF246
handbook, halfpage
400
MBD297
800 C (pF) 600 C os
MRA930
RDSon () 300
200
400
C is 100 200
0 0 50 100 T j ( C)
o
0 150 0 10 20 30 40 VDS (V)
VGS = 10 V; ID = 5 A. VGS = 0; f = 1 MHz.
Fig.6
Drain-source on-state resistance as a function of junction temperature, typical values.
Fig.7
Input and output capacitance as functions of drain-source voltage, typical values.
MGG108
handbook, halfpage
300
Crs (pF) 200
100
0 0 10 20 30 VDS (V) 40
VGS = 0; f = 1 MHz.
Fig.8 Feedback capacitance as a function of drain-source voltage, typical values.
1996 Oct 21
5
Philips Semiconductors
Product specification
VHF power MOS transistor
APPLICATION INFORMATION RF performance in CW operation in a common source test circuit. Th = 25 C; Rth mb-h = 0.2 K/W; RGS = 12 unless otherwise specified. MODE OF OPERATION CW, class-B CW, class-B CW, class-C Note 1. VGS = 0 (class-C). Ruggedness in class-B operation f (MHz) 108 108 108 VDS (V) 28 28 28 ID (A) 0.1 0.1 0(1) PL (W) 80 80 80 Gp (dB) >16
BLF246
D (%) >55 typ. 65 typ. 72
typ. 18 typ. 15
The BLF246 is capable of withstanding a load mismatch corresponding to VSWR = 50: 1 through all phases under the following conditions: VDS = 28 V; f = 108 MHz; Th = 25 C; Rth mb-h = 0.2 K/W at rated output power. Noise figure Measured with 80 W power-matched source and load in the test circuit (see Fig.9) with VDS = 28 V; ID = 2 A; f = 108 MHz; RGS = 27 ; Th = 25 C; Rth mb-h = 0.2 K/W; F = typ. 3 dB.
MGG096
MGG095
handbook, halfpage
20
100 Gp
handbook, halfpage
150
Gp (dB)
D
D (%)
PL (W) 100
10
50
50
0 0 50 100 PL (W)
0 150
50 0 1 2 3 4 PIN (W) 5
Class-B operation; VDS = 28 V; IDQ = 0.1 A; RGS = 12 ; f = 108 MHz; Th = 25 C; Rth mb-h = 0.2 K/W.
Class-B operation; VDS = 28 V; IDQ = 0.1 A; RGS = 12 ; f = 108 MHz; Th = 25 C; Rth mb-h = 0.2 K/W.
Fig.9
Power gain and efficiency as functions of load power, typical values.
Fig.10 Load power as a function of input power, typical values.
1996 Oct 21
6
Philips Semiconductors
Product specification
VHF power MOS transistor
BLF246
handbook, full pagewidth
C12 C10 input 50 C1 L1 C11 L2 DUT L3 C6 C2 C3 R1 C4 L5 R3 L4 L6 L8
C13 C14 output 50
C7
R2 C5 VG
L7 C8 C9
VDS
MGG097
Fig.11 Test circuit for class-B operation at 108 MHz.
1996 Oct 21
7
Philips Semiconductors
Product specification
VHF power MOS transistor
List of components (see Figs 11 and 12). COMPONENT C1, C4, C5, C8, C14 C2, C3, C6, C7 C9 C10 C11 C12 C13 L1 DESCRIPTION multilayer ceramic chip capacitor film dielectric trimmer electrolytic capacitor multilayer ceramic chip capacitor; note 1 multilayer ceramic chip capacitor; note 1 multilayer ceramic chip capacitor; note 1 multilayer ceramic chip capacitor; note 1 5 turns enamelled 0.6 mm copper wire 2 turns enamelled 0.6 mm copper wire stripline; note 2 3 turns enamelled 1.6 mm copper wire hairpin of enamelled 1.6 mm copper wire grade 3B Ferroxcube HF choke 3 turns enamelled 1.6 mm copper wire metal film resistor metal film resistor metal film resistor 52 nH length 8 mm int. dia. 6 mm leads 2 x 9 mm VALUE 100 nF 5 to 60 pF 2.2 F, 63 V 68 pF + 39 pF in parallel 69 pF + 100 pF in parallel 2x 100 pF in parallel 62 pF 52 nH length 6.5 mm int. dia. 3 mm leads 2 x 10 mm length 3.5 mm int. dia. 3 mm leads 2 x 7.5 mm length 13 mm width 6 mm length 12 mm int. dia. 6 mm leads 2 x 5 mm length 20 mm DIMENSIONS
BLF246
CATALOGUE NO. 2222 852 47104 2222 809 08003 2222 030 38228
L2
19 nH
L3, L4 L5
31 36 nH
L6 L7 L8
14 nH
4312 020 36640
R1 R2 R3 Notes
2 x 24 in parallel, 0.4 W 100 k, 0.4 W 10 , 0.4 W
1. American Technical Ceramics capacitor, type 100B or other capacitor of the same quality. 2. The striplines are mounted on a double copper-clad PCB with epoxy fibre-glass dielectric (r = 4.5), thickness 1.6 mm.
1996 Oct 21
8
Philips Semiconductors
Product specification
VHF power MOS transistor
BLF246
handbook, full pagewidth
150
STRAP RIVET 70
STRAP
L7 +VDS R3 R2 + VG R1 L6 L2 L3 L4 C4 L5 C1 C10 L1 C11 C12 L8 C13 C14 C5 C8 C9
C2
C3
C6
C7
MGG098
Dimensions in mm. The circuit and components are situated on one side of the epoxy fibre-glass board, the other side being fully metallized to serve as a ground. Earth connections are made by means of hollow rivets, whilst under the source leads, copper straps are used for a direct contact between the upper and lower sheets.
Fig.12 Component layout for 108 MHz class-B test circuit.
1996 Oct 21
9
Philips Semiconductors
Product specification
VHF power MOS transistor
BLF246
handbook, halfpage
5
MGG093
handbook, halfpage
6
MGG094
Zi () 0
ri
ZL ()
4 xi RL
-5
2 -10
XL
-15
0 0 50 100 150 f (MHz) 200 0 50 100 150 f (MHz) 200
Class-B operation; VDS = 28 V; IDQ = 0.1 A; RGS = 12 ; PL = 80 W; Th = 25 C; Rth mb-h = 0.2 K/W.
Class-B operation; VDS = 28 V; IDQ = 0.1 A; RGS = 12 ; PL = 80 W; Th = 25 C; Rth mb-h = 0.2 K/W.
Fig.13 Input impedance as a function of frequency (series components), typical values.
Fig.14 Load impedance as a function of frequency (series components), typical values.
handbook, halfpage
40
MGG092
Gp (dB) 30
20
10
0 0 50 100 150 f (MHz) 200
Class-B operation; VDS = 28 V; IDQ = 0.1 A; RGS = 12 ; PL = 80 W; Th = 25 C; Rth mb-h = 0.2 K/W.
Fig.15 Power gain as a function of frequency, typical values.
1996 Oct 21
10
Philips Semiconductors
Product specification
VHF power MOS transistor
PACKAGE OUTLINE
BLF246
handbook, full pagewidth
6.35 29 26 5.9 5.5
0.14
ceramic 1 4 25.2 max 6.5 min 13 max
18.42
BeO 29 26 2 3.35 (2x) 3.04 3 metal
12.2 max 2.54 4.50 4.05
7.5 max
MBC873
Dimensions in mm.
Fig.16 SOT121.
1996 Oct 21
11
Philips Semiconductors
Product specification
VHF power MOS transistor
DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values
BLF246
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
1996 Oct 21
12

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