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| BFR340L3 NPN Silicon RF Transistor Preliminary data Low voltage/ Low current operation Transition frequency of 14 GHz High insertion gain Ideal for low current amplifiers and oscillators 3 1 2 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BFR340L3 Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation1) Junction temperature Ambient temperature Storage temperature Thermal Resistance Parameter Junction - soldering point2) TS 120C Marking FA Pin Configuration 1=B 2=E 3=C Symbol VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg Symbol RthJS Value 6 15 15 2 10 2 60 150 -65 ... 150 -65 ... 150 Value tbd Package TSLP-3-1 Unit V mA mW C 1T is measured on the collector lead at the soldering point to the pcb S 2For calculation of R please refer to Application Note Thermal Resistance thJA Unit K/W 1 Jun-16-2003 BFR340L3 Electrical Characteristics at TA = 25C, unless otherwise specified Parameter Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 15 V, VBE = 0 Collector-base cutoff current VCB = 5 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gainIC = 5 mA, VCE = 3 V hFE 60 130 200 IEBO 1 A ICBO 100 nA ICES 10 A V(BR)CEO 6 9 V Symbol min. Values typ. max. Unit 2 Jun-16-2003 BFR340L3 Electrical Characteristics at TA = 25C, unless otherwise specified Parameter Symbol Values min. AC Characteristics (verified by random sampling) Transition frequency fT IC = 6 mA, VCE = 3 V, f = 1 GHz Collector-base capacitance VCB = 5 V, f = 1 MHz, emitter grounded Collector emitter capacitance VCE = 5 V, f = 1 MHz, base grounded Emitter-base capacitance VEB = 0.5 V, f = 1 MHz, collector grounded Noise figure IC = 1 mA, VCE = 3 V, ZS = ZSopt , f = 1.8 GHz Power gain, maximum stable1) IC = 5 mA, VCE = 3 V, ZS = ZSopt , ZL = ZLopt , f = 1.8 GHz Power gain, maximum available1) IC = 5 mA, VCE = 3 V, ZS = ZSopt , ZL = ZLopt , f = 3 GHz Transducer gain IC = 5 mA, VCE = 3 V, ZS = ZL = 50 , f = 1.8 GHz IC = 5 mA, VCE = 3 V, ZS = ZL = 50 , f = 3 GHz Third order intercept point at output 2) VCE = 3 V, IC = 5 mA, f = 1.8 GHz, ZS = ZL = 50 1dB Compression point at output IC = 5 mA, VCE = 3 V, ZS = ZL = 50 , f = 1.8 GHz 1G 1/2 ma = |S21e / S12e | (k-(k-1) ) 2IP3 value depends on termination of all intermodulation frequency components. Termination used for this measurement is 50 from 0.1 MHz to 6 GHz Unit max. 0.4 dB GHz pF typ. 14 0.17 0.13 0.12 1.15 10 - Ccb Cce Ceb Fmin Gms - 17 - - Gma - 12.5 - dB |S21e|2 IP3 13.5 9.5 12.5 - dB dBm P-1dB - -1 - 3 Jun-16-2003 BFR340L3 SPICE Parameter (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax): Transitor Chip Data: fF ps mA V ns - deg fF - V fF V eV K All parameters are ready to use, no scalling is necessary. Extracted on behalf of Infineon Technologies AG by: Institut fur Mobil- und Satellitentechnik (IMST) Package Equivalent Circuit: C4 C1 L2 B C7 R1 L3 C B' Transistor Chip E' C' C6 Valid up to 6GHz E For examples and ready to use parameters please contact your local Infineon Technologies distributor or sales office to obtain a Infineon Technologies CD-ROM or see Internet: http//www.infineon.com/silicondiscretes EHA07536 4 Jun-16-2003 C2 L1 C3 C5 L1 = L2 = L3 = C1 = C2 = C3 = C4 = C5 = C6 = C7 = R1 = 0.575 0.575 0.275 33 28 131 8 8 24 300 204 nH nH nH fF fF fF fF fF fF fF V IS = VAF = NE = VAR = NC = RBM = CJE = TF = ITF = VJC = TR = MJS = XTI = 6.12 42.228 2.4753 16.777 0.8956 0.2403 182 10.3 0.0017 0.5487 2.71 0 0 fA V V - BF = IKF = BR = IKR = RB = RE = VJE = XTF = PTF = MJC = CJS = NK = FC = 98.48 103 19.61 0.834 59.99 3.677 0.626 0 0 0.319 0 0.5 0.735 mA A NF = ISE = NR = ISC = IRB = RC = MJE = VTF = CJC = XCJC = VJS = EG = TNOM 0.4213 11.768 0.3253 3.632 0.01 5.2493 0.4172 0.262 222.63 0.3904 0.75 1.11 300 nA nA mA |
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