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| BFR340F NPN Silicon RF Transistor Preliminary data Low voltage/ low current operation Transition frequency of 14 GHz High insertion gain Ideal for low current amplifiers and oscillators 3 1 2 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BFR340F Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation1) Junction temperature Ambient temperature Storage temperature Thermal Resistance Parameter Junction - soldering point2) TS 118C Marking FAs Pin Configuration 1=B 2=E 3=C Symbol VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg Symbol RthJS Value 6 15 15 2 10 2 60 150 -65 ... 150 -65 ... 150 Value 530 Package TSFP-3 Unit V mA mW C 1T is measured on the collector lead at the soldering point to the pcb S 2For calculation of R please refer to Application Note Thermal Resistance thJA 1 Unit K/W Jul-01-2003 BFR340F Electrical Characteristics at TA = 25C, unless otherwise specified Parameter Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 15 V, VBE = 0 Collector-base cutoff current VCB = 5 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gainIC = 5 mA, VCE = 3 V hFE 60 130 200 IEBO 1 A ICBO 100 nA ICES 10 A V(BR)CEO 6 9 V Symbol min. Values typ. max. Unit 2 Jul-01-2003 BFR340F Electrical Characteristics at TA = 25C, unless otherwise specified Symbol Values Parameter min. typ. max. AC Characteristics (verified by random sampling) Transition frequency fT IC = 6 mA, VCE = 3 V, f = 1 GHz Collector-base capacitance VCB = 5 V, f = 1 MHz, emitter grounded Collector emitter capacitance VCE = 5 V, f = 1 MHz, base grounded Emitter-base capacitance VEB = 0.5 V, f = 1 MHz, collector grounded Noise figure IC = 1 mA, VCE = 3 V, ZS = ZSopt , f = 1.8 GHz Power gain, maximum stable1) IC = 5 mA, VCE = 3 V, ZS = ZSopt , ZL = ZLopt , f = 1.8 GHz Power gain, maximum available1) IC = 5 mA, VCE = 3 V, ZS = ZSopt , ZL = ZLopt , f = 3 GHz Transducer gain IC = 5 mA, VCE = 3 V, ZS = ZL = 50 , f = 1.8 GHz IC = 5 mA, VCE = 3 V, ZS = ZL = 50 , f = 3 GHz Third order intercept point at output2) VCE = 3 V, IC = 5 mA, f = 1.8 GHz, ZS = ZL = 50 1dB Compression point at output IC = 5 mA, VCE = 3 V, ZS = ZL = 50 , f = 1.8 GHz 1G 1/2 ma = |S21e / S12e | (k-(k-1) ), Gms = |S21e / S12e| 2IP3 value depends on termination of all intermodulation frequency components. Termination used for this measurement is 50 from 0.1 MHz to 6 GHz Unit 11 - 14 0.21 0.17 0.11 1.15 0.4 - GHz pF Ccb Cce Ceb Fmin dB Gms - 16 - - Gma - 12 - dB |S21e|2 IP3 13 9.5 13 - dB dBm P-1dB - 0 - 3 Jul-01-2003 BFR340F SPICE Parameter (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax): Transitor Chip Data: IS = VAF = NE = VAR = NC = RBM = CJE = TF = ITF = VJC = TR = MJS = XTI = 6.12 42.228 2.4753 16.777 0.8956 0.2403 182 10.3 0.0017 0.5487 2.71 0 0 fA V V fF ps mA V ns BF = IKF = BR = IKR = RB = RE = VJE = XTF = PTF = MJC = CJS = NK = FC = 98.48 103 19.61 0.834 59.99 3.677 0.626 0 0 0.319 0 0.5 0.735 mA A NF = ISE = NR = ISC = IRB = RC = MJE = VTF = CJC = XCJC = VJS = EG = TNOM 0.4213 11.768 0.3253 3.632 0.01 5.2493 0.4172 0.262 222.63 0.3904 0.75 1.11 300 nA nA mA V fF V eV K deg fF - All parameters are ready to use, no scalling is necessary. Extracted on behalf of Infineon Technologies AG by: Institut fur Mobil- und Satellitentechnik (IMST) Package Equivalent Circuit: C4 C1 L2 B L3 C B' Transistor Chip E' C' L1 = L2 = L3 = C1 = C2 = C3 = C4 = C5 = C6 = 0.556 0.657 0.381 43 123 66 10 36 47 nH nH nH fF fF fF fF fF fF C6 C2 L1 C3 C5 Valid up to 6GHz E For examples and ready to use parameters please contact your local Infineon Technologies distributor or sales office to obtain a Infineon Technologies CD-ROM or see Internet: http//www.infineon.com/silicondiscretes EHA07524 4 Jul-01-2003 V BFR340F Total power dissipation Ptot = (TS ) Permissible Pulse Load RthJS = (tp ) 80 mW 60 50 RthJS K/W P tot 40 30 20 10 10 2 -7 10 0 0 15 30 45 60 75 90 105 120 C 10 1 Ptot_max/PtotDC Ccb 10 0 -7 10 10 -6 10 Ptotmax/PtotDC = (tp) f = 1MHz 0.4 pF D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 0.3 0.25 0.2 0.15 0.1 0.05 -5 10 -4 10 -3 10 -2 s 10 0 0 0 2 4 6 8 10 12 tp 5 Jul-01-2003 Permissible Pulse Load 10 3 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 150 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 TS tp Collector-base capacitance Ccb = (VCB ) V 16 VCB BFR340F Third order Intercept Point IP3=(IC) (Output, ZS=ZL=50) Transition frequency fT = (IC) f = 1GHz VCE = parameter 16 GHz 5V VCE = parameter, f = 1.8GHz 20 dBm 12 12 3V IP 3 fT 8 10 2V 4 0 6V 4V 3V 2V 1V 8 1V 6 0.75V -4 4 -8 2 -12 0 2 4 6 8 mA 12 0 0 2 4 6 8 mA 12 IC IC f = 0.9GHz VCE = parameter 22 dB 20 19 18 f = 1.8GHz VCE = parameter 20 5V 3V 2V 1V 0.75V mA 5V 3V 16 2V G 17 16 15 14 13 12 11 10 0 2 4 6 8 10 mA G 14 1V 12 0.75V 10 8 14 6 0 2 4 6 IC 6 Power gain Gma, Gms = (IC ) Power gain Gma, Gms = (IC) 8 mA 12 IC Jul-01-2003 BFR340F 3 VCE = parameter 45 Ic=5mA dB 35 18 G G 30 25 5V 3V 2V 1V 0.75V 20 15 8 10 6 GHz 5 0 0.5 1 1.5 2 f = parameter 22 dB 20 19 18 Ic = 5mA G 17 16 15 14 13 12 11 10 0 1 2 3 4 5 G |S21| = (VCE): - - - - VCE = 3V f = parameter 24 0.9GHz dB 0.9GHz 20 0.9GHz 1.8GHz 18 16 14 12 10 1.8GHz 8 6 V 6 8 4 0 2 4 6 VCE 7 Power Gain Gma , Gms = Power Gain Gma , Gms = (f) Insertion Power Gain |S21| = VCE = parameter 24 dB Ic=5mA (f) 20 16 14 12 10 5V 3V 2V 1V 0.75V 2.5 3 4 4 0 0.5 1 1.5 2 2.5 GHz 4 f f (VCE ): Power gain Gma, Gms = (IC ) 1.8GHz 2.4GHz 3GHz 4GHz 8 10 mA 14 IC Jul-01-2003 BFR340F Noise figure NF = (IC ) Source impedance for min. noise figure vs. frequency VCE = 3V, f = 1,8 GHz 6 GHz VCE = 3 V +j50 5 4.5 4 +j10 4GHz 3GHz 2.4GHz 1.8GHz 0.9GHz +j25 +j100 F 3.5 3 2.5 2 1.5 1 0.5 0 0 2 4 6 8 mA NFmin F50 0 10 25 50 100 -j10 5mA 1mA -j25 -j50 12 -j100 IC 8 Jul-01-2003 |
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