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| BAR 65-02W Silicon RF Switching Diode Preliminary data * Low loss, low capacitance PIN-diode * Band switch for TV-tuners * Series diode for mobile communication transmit-receiver switch 2 1 VES05991 Type BAR 65-02W Marking N Ordering Code Q62702-A1216 Pin Configuration 1=C 2=A Package SCD-80 Maximum Ratings Parameter Diode reverse voltage Forward current Operating temperature range Storage temperature Symbol Value 30 100 - 55 ...+125 - 55 ...+150 Unit V mA C VR IF T op T stg Semiconductor Group Semiconductor Group 11 Jun-18-1998 1998-11-01 BAR 65-02W Electrical Characteristics at TA = 25C, unless otherwise specified. Parameter DC characteristics Reverse current Symbol min. Values typ. 0.93 max. 20 1 nA V Unit IR VF - VR = 20 V Forward voltage I F = 100 mA AC characteristics Diode capacitance CT 0.6 0.57 0.65 0.56 0.6 0.9 0.8 pF VR = 1 V, f = 1 MHz VR = 3 V, f = 1 MHz Forward resistance rf 0.95 0.9 - I F = 5 mA, f = 100 MHz I F = 10 mA, f = 100 MHz Series inductance Ls - nH Semiconductor Group Semiconductor Group 22 Jun-18-1998 1998-11-01 BAR 65-02W Forward current IF = f (V F) T A = 25C 10 3 mA Forward resistance rf = f(IF) f = 100MHz 3.0 Ohm 10 2 2.4 IF RF 2.2 2.0 1.8 10 1 1.6 1.4 1.2 1.0 10 0 0.8 0.6 0.4 0.2 10 -1 400 500 600 700 800 mV 1000 0.0 -1 10 10 0 mA VF IF Diode capacitance CT = f (V R) f = 1MHz Diode capacitance CT = f (VR) f = 100MHz 1.0 1.0 pF pF CT 0.8 CT 0.8 0.7 0.7 0.6 0.6 0.5 0.5 0.4 0.4 0.3 0.3 0.2 0 1 2 3 4 5 6 7 8 V 10 0.2 0 1 2 3 4 5 6 7 8 V 10 VR VR Semiconductor Group Semiconductor Group 33 Jun-18-1998 1998-11-01 |
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