![]() |
|
If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
Datasheet File OCR Text: |
2SD288 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER * TO-220 ABSOLUTE MAXIMUM RATINGS (TA=25oC) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base voltage Collector Current (DC) Collector Dissipation (Tc=25oC) Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating 80 55 5 3 20 150 -50~150 Unit V V V A W C C o o ELECTRICAL CHARACTERISTICS (TA=25oC) Characteristic Collector Cutoff Current DC Current Gain Collector- Emitter Saturation Voltage Current Gain Bandwidth Product Symbol ICBO hFE1 VCE(sat) Test Condition VCB= 50V , IE=0 VCE= 5V , IC=0.5A IC=1A , IB=0.1A 40 Min Typ Max 50 240 1.0 Unit A V Wing Shing Computer Components Co., (H.K)Ltd. Homepage: http:/ /www.wingshing.com TeL(852)2341 9276 Fax:(852)2797 8153 . e_ mail:ws@wingshing.com |
Price & Availability of 2SD288
![]() |
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |