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| DS1628 DS3628 Octal TRI-STATE MOS Drivers February 1986 DS1628 DS3628 Octal TRI-STATE MOS Drivers General Description The DS1628 DS3628 are octal Schottky memory drivers with TRI-STATE outputs designed to drive high capacitive loads associated with MOS memory systems The drivers' output (VOH) is specified at 3 4V to provide additional noise immunity required by MOS inputs A PNP input structure is employed to minimize input currents The circuit employs Schottky-clamped transistors for high speed A NOR gate of two inputs DIS1 and DIS2 controls the TRI-STATE mode Features Y Y Y Y Y Y High speed capabilities Typical 5 ns driving 50 pF 8 ns driving 500 pF TRI-STATE outputs High VOH (3 4V min) High density Eight drivers and two disable controls for TRI-STATE in a 20-pin package PNP inputs reduce DC loading on bus lines Glitch-free power up down Schematic and Connection Diagrams Dual-In-Line Package Top View TL F 5875 - 1 TL F 5875 - 2 (Equivalent Input Output Circuit) Order Number DS1628J DS3628J DS3628N See NS Package Number J20A or N20A Truth Table Disable Input DIS 1 H H X L L H e high level L e low level X e don't care Z e high impedance (off) Typical Application Input X X X H L Output Z Z Z L H DIS 2 H X H L L TL F 5875 - 3 TRI-STATE is a registered trademark of National Semiconductor Corp C1995 National Semiconductor Corporation TL F 5875 RRD-B30M115 Printed in U S A Absolute Maximum Ratings (Note 1) If Military Aerospace specified devices are required please contact the National Semiconductor Sales Office Distributors for availability and specifications Supply Voltage Logical ``1'' Input Voltage Logical ``0'' Input Voltage 7 0V 7 0V Operating Conditions Supply voltage (VCC) Temperature (TA) DS1628 DS3628 Min 45 b 55 Max 55 a 125 a 70 Units V C C 0 b 1 5V b 65 C to a 150 C Storage Temperature Range Maximum Power Dissipation at 25 C Cavity Package 1667 mW Molded Package 1832 mW Lead Temperature (Soldering 10 seconds) 300 C Derate cavity package 11 1 mW C above 25 C derate molded package 14 7 mW C above 25 C Electrical Characteristics (Notes 2 Symbol VIN(1) VIN(0) IIN(1) IIN(0) VCLAMP VOH VOL VOH VOL IID IOD Hi-Z ICC Parameter Logical ``1'' Input Voltage Logical ``0'' Input Voltage Logical ``1'' Input Current Logical ``0'' Input Current Input Clamp Voltage Logical ``1'' Output Voltage (No Load) Logical ``0'' Output Voltage (No Load) Logical ``1'' Output Voltage (With Load) Logical ``0'' Output Voltage (With Load) Logical ``1'' Drive Current Logical ``0'' Drive Current TRI-STATE Output Current Power Supply Current VCC e 5 5V VCC e 5 5V VCC e 4 5V 3) Conditions Min 20 08 VIN e 5 5V VIN e 5 5V IIN e b18 mA DS1628 DS3628 DS1628 DS3628 DS1628 DS3628 DS1628 DS3628 25 27 34 35 01 b 180 b0 7 Typ Max Units V V mA mA V V V 40 b 400 b1 2 VCC e 4 5V IOH e b10 mA VCC e 4 5V IOL e 10 mA VCC e 4 5V IOH e b1 0 mA VCC e 4 5V IOL e 20 mA VCC e 4 5V VOUT e 0V (Note 6) VCC e 4 5V VOUT e 4 5V (Note 6) 43 43 0 25 0 25 39 39 0 35 b 150 04 0 35 V V V V 05 V mA mA 150 b 40 VOUT e 0 4V to 2 4V DIS1 or DIS2 e 2 0V VCC e 5 5V One DIS Input e 3 0V All Other Inputs e X Outputs at Hi-Z DIS1 DIS2 e 0V Others e 3V Outputs on All Inputs e 0V Outputs Off 01 90 70 25 40 120 100 50 mA mA mA mA Switching Characteristics (VCC e 5V Symbol tS a b tSb a tF tR tZL tZH Parameter Storage Delay Negative Edge Storage Delay Positive Edge Fall Time Rise Time Delay from Disable Input to Logical ``0'' Level (from High Impedance State) Delay from Disable Input to Logical ``1'' Level (from High Impedance State) TA e 25 C) (Note 6) Conditions (Figure 1 ) (Figure 1 ) (Figure 1 ) (Figure 1 ) CL e 50 pF to GND CL e 50 pF to GND 2 CL e 50 pF CL e 500 pF CL e 50 pF CL e 500 pF CL e 50 pF CL e 500 pF CL e 50 pF CL e 500 pF RL e 2 kX to VCC (Figure 2 ) RL e 2 kX to GND (Figure 2 ) Min Typ 40 65 42 65 42 19 52 20 19 13 Max 50 80 50 80 60 22 70 24 25 20 ns ns ns ns ns Units ns Switching Characteristics Symbol tLZ tHZ Parameter (Continued) (VCC e 5V TA e 25 C) (Note 6) Conditions CL e 50 pF to GND CL e 50 pF to GND RL e 400X to VCC (Figure 3 ) RL e 400X to GND (Figure 3 ) Min Typ 18 85 Max 25 15 Units ns ns Delay from Disable Input to High Impedance State (from Logical ``0'' Level) Delay from Disable Input to High Impedance State (from Logical ``1'' Level) AC Test Circuits and Switching Time Waveforms tS a b tSb a tr tf TL F 5875 - 5 TL F 5875 - 4 FIGURE 1 tZH tZL TL F 5875-6 TL F 5875 - 7 TL F 5875 - 8 ANY ONE OF EIGHT OUTPUTS FIGURE 2 tHZ tLZ TL F 5875-9 TL F 5875 - 10 TL F 5875 - 11 FIGURE 3 Note 1 ``Absolute Maximum Ratings'' are those values beyond which the safety of the device cannot be guaranteed Except for ``Operating Temperature Range'' they are not meant to imply that the devices should be operated at these limits The table of ``Electrical Characteristics'' provides conditions for actual device operation Note 2 Unless otherwise specified min max limits apply across the b 55 C to a 125 C temperature range for the DS1628 and across the 0 C to a 70 C range for the DS3628 All typical values are for TA e 25 C and VCC e 5V Note 3 All currents into device pins shown as positive all currents out of device pins shown as negative all voltages references to ground unless otherwise noted All values shown as max or min on absolute value basis Note 4 The pulse generator has the following characteristics ZOUT e 50X and PRR s 1 mHz Rise and fall times between 10% and 90% points s 5 ns Note 5 CL includes probe and jig capacitance Note 6 When measuring output drive current and switching response for the DS1628 and DS3628 a 15X resistor should be placed in series with each output 3 DS1628 DS3628 Octal TRI-STATE MOS Drivers Physical Dimensions inches (millimeters) Ceramic Dual-In-Line Package (J) Order Number DS1628J or DS3628J NS Package Number J20A LIFE SUPPORT POLICY Molded Dual-In-Line Package (N) Order Number DS3628N NS Package Number N20A NATIONAL'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF NATIONAL SEMICONDUCTOR CORPORATION As used herein 1 Life support devices or systems are devices or systems which (a) are intended for surgical implant into the body or (b) support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in a significant injury to the user National Semiconductor Corporation 1111 West Bardin Road Arlington TX 76017 Tel 1(800) 272-9959 Fax 1(800) 737-7018 2 A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system or to affect its safety or effectiveness National Semiconductor Europe Fax (a49) 0-180-530 85 86 Email cnjwge tevm2 nsc com Deutsch Tel (a49) 0-180-530 85 85 English Tel (a49) 0-180-532 78 32 Fran ais Tel (a49) 0-180-532 93 58 Italiano Tel (a49) 0-180-534 16 80 National Semiconductor Hong Kong Ltd 13th Floor Straight Block Ocean Centre 5 Canton Rd Tsimshatsui Kowloon Hong Kong Tel (852) 2737-1600 Fax (852) 2736-9960 National Semiconductor Japan Ltd Tel 81-043-299-2309 Fax 81-043-299-2408 National does not assume any responsibility for use of any circuitry described no circuit patent licenses are implied and National reserves the right at any time without notice to change said circuitry and specifications |
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