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| AP4435M Advanced Power Electronics Corp. Simple Drive Requirement Low On-resistance Fast Switching D D D D P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID G S -30V 20m -8A SO-8 S S Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SO-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. D G S Absolute Maximum Ratings Symbol VDS VGS ID@TA=25 ID@TA=70 IDM PD@TA=25 TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current 1 3 Rating -30 20 -8 -6 -50 2.5 0.02 -55 to 150 -55 to 150 Units V V A A A W W/ Continuous Drain Current3 Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-amb Parameter Thermal Resistance Junction-ambient 3 Value Max. 50 Unit /W Data and specifications subject to change without notice 20020430 AP4435M Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS BVDSS/Tj Parameter Drain-Source Breakdown Voltage 2 Test Conditions VGS=0V, ID=-250uA Min. Typ. Max. Units -30 -1 -0.037 20 35 -3 -1 -25 100 - V V/ m m V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25, ID=-1mA RDS(ON) Static Drain-Source On-Resistance VGS=-10V, ID=-8A VGS=-4.5V, ID=-5A 20 36 5.5 3.5 12 8 75 40 1530 900 280 VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=70 C) o o VDS=VGS, ID=-250uA VDS=-15V, ID=-8A VDS=-30V, VGS=0V VDS=-24V, VGS=0V VGS= 20V ID=-4.6A VDS=-15V VGS=-10V VDS=-15V ID=-1A RG=6,VGS=-10V RD=15 VGS=0V VDS=-15V f=1.0MHz Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 2 Source-Drain Diode Symbol IS VSD Parameter Continuous Source Current ( Body Diode ) Test Conditions VD=VG=0V , VS=-1.2V Tj=25, IS=-2.1A, VGS=0V Min. Typ. Max. Units -2.08 A V -0.75 -1.2 Forward On Voltage 2 Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width <300us , duty cycle <2%. 3.Surface mounted on 1 in2 copper pad of FR4 board ; 125 /W when mounted on Min. copper pad. AP4435M 50 50 -10V -8.0V -6.0V 40 -10V -8.0V -6.0V 40 -ID , Drain Current (A) -ID , Drain Current (A) 30 30 V GS =-4.0V 20 V GS =-4.0V 20 10 10 T C =25 o C 0 0 2 4 6 8 10 0 0 2 4 6 T C =150 o C 8 10 -V DS , Drain-to-Source Voltage (V) -V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 40 1.6 35 I D =-8A T C =25 1.4 I D =-8A V GS =-10V Normalized RDS(ON) RDS(ON) (m ) 30 1.2 25 1.0 20 0.8 15 3 4 5 6 7 8 9 10 11 0.6 -50 0 50 100 150 -V GS (V) T j , Junction Temperature ( o C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature AP4435M 10 3 2.5 8 -ID , Drain Current (A) 2 6 PD (W) 4 2 0 25 50 75 100 125 150 1.5 1 0.5 0 0 25 50 75 100 125 150 T c , Case Temperature ( C) o T c , Case Temperature ( C) o Fig 5. Maximum Drain Current v.s. Fig 6. Typical Power Dissipation Case Temperature 100 1 Duty Factor = 0.5 100us 10 0.2 Normalized Thermal Response (R thja) 0.1 0.1 1ms -ID (A) 10ms 1 0.05 0.02 100ms 1s T C =25 o C Single Pulse 0.01 0.1 1 10 100 0.01 0.01 Single Pulse PDM t T 0.1 10s DC 0.001 0.0001 0.001 0.01 0.1 1 Duty Factor = t/T Peak Tj = P DM x Rthja + Ta Rthja=125 oC/W 10 100 1000 -V DS (V) t , Pulse Width (s) Fig 7. Maximum Safe Operating Area Fig 8. Effective Transient Thermal Impedance AP4435M 14 f=1.0MHz 10000 12 I D =-4.6A V DS =-15V -VGS , Gate to Source Voltage (V) 10 8 Ciss C (pF) 1000 6 Coss 4 Crss 2 0 0 5 10 15 20 25 30 35 40 45 50 100 1 5 9 13 17 21 25 29 Q G , Total Gate Charge (nC) -V DS (V) Fig 9. Gate Charge Characteristics Fig 10. Typical Capacitance Characteristics 100.00 3 10.00 2 1.00 -VGS(th) (V) 1 0 -50 -IS(A) T j =150 o C T j =25 o C 0.10 0.01 0.1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 0 50 100 150 -V SD (V) T j , Junction Temperature ( C) o Fig 11. Forward Characteristic of Reverse Diode Fig 12. Gate Threshold Voltage v.s. Junction Temperature AP4435M VDS RD 90% D VDS TO THE OSCILLOSCOPE 0.5 x RATED RG G S -10 V VGS 10% VGS td(on) tr td(off) tf Fig 13. Switching Time Circuit Fig 14. Switching Time Waveform VG VDS TO THE OSCILLOSCOPE QG -10V D 0.5 x RATED VDS G S -1~-3mA I G QGS VGS QGD I D Charge Q Fig 15. Gate Charge Circuit Fig 16. Gate Charge Waveform |
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