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| SHINDENGEN Schottky Barrier Diode Twin Diode S15SC4M 40V 15A FEATURES Tj150 PRRSM avalanche guaranteed Small jc High current capacity OUTLINE DIMENSIONS Case : MTO-3P Unit : mm APPLICATION Switching power supply DC/DC converter Home Appliances, Office Equipment Telecommunication RATINGS Absolute Maximum Ratings (If not specified Tc=25) Item Symbol Conditions Tstg Storage Temperature Tj Operating Junction Temperature VRM Maximum Reverse Voltage VRRSM Pulse width 0.5ms, duty 1/40 Repetitive Peak Surge Reverse Voltage IO Average Rectified Forward Current 50Hz sine wave, R-load, Rating for each diode Io/2, Tc=135 IFSM 50Hz sine wave, Non-repetitive 1 cycle peak value, Rating of per diode, Tj=125 Peak Surge Forward Current PRRSM Pulse width 10s, Rating of per diode, Tj=25 Repetitive Peak Surge Reverse Power TOR (Recommended torque0.5Nm) Mounting Torque Electrical Characteristics (If not specified Item Symbol VF Forward Voltage IR Reverse Current Cj Junction Capacitance jc Thermal Resistance Tc=25) Conditions IF=7.5A, VR=VRM, f=1MHz, Pulse measurement, Rating of per diode Pulse measurement, Rating of per diode VR=10V Rating of per diode Ratings -40150 150 40 45 15 170 330 0.8 Unit V V A A W Nm junction to case Ratings Max.0.55 Max.5 Typ.340 Max.1.2 Unit V mA pF /W Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd S15SC4M Forward Voltage 10 Forward Current IF [A] Tc=150C [MAX] Tc=150C [TYP] Tc=25C [MAX] Tc=25C [TYP] 1 Pulse measurement per diode 0.1 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 Forward Voltage VF [V] S15SC4M Junction Capacitance f=1MHz Tc=25C TYP per diode 1000 Junction Capacitance Cj [pF] 100 0.1 1 10 Reverse Voltage VR [V] S15SC4M 1000 Reverse Current Tc=150C [MAX] 100 Tc=150C [TYP] Reverse Current IR [mA] Tc=125C [TYP] 10 Tc=100C [TYP] 1 Tc=75C [TYP] 0.1 Pulse measurement per diode 0.01 0 5 10 15 20 25 30 35 40 Reverse Voltage VR [V] S15SC4M 25 Reverse Power Dissipation DC D=0.05 0.1 0.2 0.3 Reverse Power Dissipation PR [W] 20 15 0.5 10 5 SIN 0.8 0 0 10 20 30 40 50 Reverse Voltage VR [V] Tj = 150C 0 VR tp D=tp /T T S15SC4M 16 14 Forward Power Dissipation Forward Power Dissipation PF [W] DC D=0.8 0.5 12 SIN 10 8 6 4 2 0 0.05 0.1 0.2 0.3 0 5 10 15 20 25 Average Rectified Forward Current IO [A] Tj = 150C IO 0 tp D=tp /T T S15SC4M 30 Derating Curve Average Rectified Forward Current IO [A] 25 DC D=0.8 20 0.5 15 SIN 0.3 0.2 0.1 5 0.05 10 0 0 20 40 60 80 100 120 140 160 Case Temperature Tc [C] VR = 20V IO 0 0 VR tp D=tp /T T S15SC4M 250 Peak Surge Forward Capability IFSM 10ms 10ms 1 cycle 200 Peak Surge Forward Current IFSM [A] non-repetitive, sine wave, Tj=125C before surge current is applied 150 100 50 0 1 2 5 10 20 50 100 Number of Cycles [cycles] SBD 120 Repetitive Surge Reverse Power Derating Curve 100 PRRSM Derating [%] 80 60 40 20 0 0 50 100 150 Junction Temperature Tj [C] IRP IR 0.5IRP 0 tp PRRSM = IRP x VRP VR VRP SBD 10 Repetitive Surge Reverse Power Capability PRRSM p) / PRRSM p=10s) Ratio (t (t 1 0.1 1 10 100 Pulse Width t p [s] IRP IR 0.5IRP 0 tp PRRSM = IRP x VRP VR VRP |
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