 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| Bulletin I2776 rev. E 04/99 P400 SERIES PASSIVATED ASSEMBLED CIRCUIT ELEMENTS Features Glass passivated junctions for greater reliability Electrically isolated base plate Available up to 1200 V RRM , V DRM High dynamic characteristics Wide choice of circuit configurations Simplified mechanical design and assembly UL E78996 approved 40A Description The P400 series of Integrated Power Circuits consists of power thyristors and power diodes configured in a single package. With its isolating base plate, mechanical designs are greatly simplified giving advantages of cost reduction and reduced size. Applications include power supplies, control circuits and battery chargers. Major Ratings and Characteristics Parameters ID @ TC IFSM @ 50Hz @ 60Hz I2t @ 50Hz @ 60Hz I2t VRRM VINS TJ P400 40 80 385 400 745 680 7450 400 to 1200 2500 - 40 to 125 Units A C A A A2s A2 s A2s V V C www.irf.com 1 P400 Series Bulletin I2776 rev. E 04/99 ELECTRICAL SPECIFICATIONS Voltage Ratings Type number VRRM maximum repetitive VRSM maximum nonVDRM maximum peak reverse voltage repetitive peak reverse repetitive peak off-state voltage voltage V V V 400 600 800 1000 1200 500 700 900 1100 1300 400 600 800 1000 1200 IRRM max. @ TJ max. mA 10 P401, P421, P431 P402, P422, P432 P403, P423, P433 P404, P424, P434 P405, P425, P435 On-state Conduction Parameter ID I TSM I FSM Maximum DC output current Max. peak one-cycle non-repetitive on-state or forward current P400 40 385 400 325 340 Units Conditions A A @ TC = 80C, full bridge circuits t = 10ms t = 8.3ms t = 10ms t = 8.3ms As 2 No voltage reapplied 100% VRRM reapplied No voltage reapplied 100% VRRM reapplied Sinusoidal half wave, Initial TJ = TJ max. It 2 Maximum I2t for fusing 745 680 530 480 t = 10ms t = 8.3ms t = 10ms t = 8.3ms I 2t Maximum I2t for fusing 7450 A2s t = 0.1 to 10ms, no voltage reapplied I 2t for time tx = I 2t . tx V T(TO)1 Low value of threshold voltage V T(TO)2 High value of threshold voltage r t1 Low level value of on-state slope resistance r t2 High level value of on-state 0.83 1.03 9.61 m 7.01 V (16.7% x x IT(AV) < I < x IT(AV)), TJ = TJ max. (I > x I T(AV)), TJ = TJ max. (16.7% x x I T(AV) < I < x I T(AV)), TJ = TJ max. slope resistance V TM V FM di/dt Max. peak on-state or forward voltage drop Maximum non repetitive rate of rise of turned on current IH IL Maximum holding current Maximum latching current 200 130 250 A/s mA mA 1.4 V (I > x I T(AV)), TJ = TJ max. TJ = 25C, ITM = x I T(AV) TJ = 25C, ITM = x I F(AV) TJ = 125C from 0.67 VDRM ITM = x I T(AV), Ig = 500mA, tr < 0.5s, tp > 6s TJ = 25C anode supply = 6V, resistive load TJ = 25C anode supply = 6V, resistive load 2 www.irf.com P400 Series Bulletin I2776 rev. E 04/99 Blocking Parameter dv/dt Maximum critical rate of rise of 200 off-state voltage IRRM IDRM IRRM VINS Max. peak reverse and off-state leakage current at VRRM, VDRM Max peak reverse leakage current 10 100 mA A TJ = 125C, gate open circuit TJ = 25C 50Hz, circuit to base, all terminal shorted, RMS isolation voltage 2500 V TJ = 25C, t = 1s V/s TJ = 125C, exponential to 0.67 VDRM gate open P400 Units Conditions Triggering Parameter PGM IGM - VGM Maximum peak gate power P400 8 2 2 10 3 2 1 Units Conditions W A PG(AV) Maximum average gate power Maximum peak gate current Maximum peak negative gate voltage VGT Maximum gate voltage required to trigger V T J = - 40C T J = 25C T J = 125C T J = - 40C Anode Supply = 6V resistive load IGD Maximum gate current required to trigger 90 60 35 mA T J = 25C T J = 125C Anode Supply = 6V resistive load VGD Maximum gate voltage that will not trigger 0.2 V TJ = 125C, rated VDRM applied IGD Maximum gate current that will not trigger 2 mA TJ = 125C, rated VDRM applied Thermal and Mechanical Specification Parameter TJ Tstg Max. operating temperature range Max. storage temperature range P400 -40 to 125 Units C Conditions -40 to 125 1.05 K/W DC operation per junction RthJC Max. thermal resistance, junction to case RthCS Max. thermal resistance, case to heatsink T Mounting torque, base to heatsink 0.10 K/W Mounting surface, smooth and greased A mounting compound is recommended and the torque should be checked after a period of 3 hours to allow for the spread of the compound 4 Nm wt Approximate weight 58 (2.0) g (oz) www.irf.com 3 P400 Series Bulletin I2776 rev. E 04/99 Circuit Type and Coding * Circuit "0" Terminal Positions Circuit "2" Circuit "3" G1 G1 G2 G3 AC1 AC2 G1 Schematic diagram diagram AC1 AC2 AC2 AC1 G2 G4 G2 (-) (+) (-) (+) (-) (+) Single Phase Hybrid Bridge CommonCathode Basic series With voltage suppression With free-wheeling diode With both voltage suppression and free-wheeling diode P40. P40.K P40.W Single Phase Hybrid Bridge Doubler P42. P42.K - Single Phase All SCR Bridge P43. P43.K - P40.KW - - * To complete code refer to voltage ratings table, i.e.: for 600V P410.W complete code is P402W Outline Table 4.6 (0.18) 12.7 (0.50) 12.7 (0.50) 1.65 (0.06) 4.6 (0. 18) 2.5 (0.10) MAX. 15.5 (0.61) 63.5 (2.50) Faston 6.35x0.8 (0.25x0.03) 5.2 (0.20) 45 (1.77) 33.8 (1.33) 48.7 (1.91) All dimensions in millimeters (inches) 4 32.5 (1.28) MA X. 23.2 (0.91) 25 (0.98) MAX. MAX. www.irf.com P400 Series Bulletin I2776 rev. E 04/99 120 Maximum Total Power Loss (W) Rt 100 1 K/ W A hS = 0. 7 80 180 (Sine) 1.5 K/ W W K/ -D el 60 ta 2K R /W /W 40 P400 Series T J = 125C 3K 5 K /W 10 K/ W 20 0 0 5 10 15 20 25 30 35 40 0 25 50 75 100 125 Total Output Current (A) Maximum Allowable Ambient Temperature (C) Fig. 1 - Current Ratings Nomogram (1 Module Per Heatsink) Maximum Average On-state Power Loss (W) Maximum Average On-state Power Loss (W) 30 25 20 15 10 5 0 0 5 10 15 20 Average On-state Current (A) 180 120 90 60 30 RMS Limit 40 35 30 25 20 RMS Limit 15 10 5 0 0 5 10 15 20 25 30 35 Average On-sta te Current (A) P400 Series T J = 125C Per Junction DC 180 120 90 60 30 Conduction angle P400 Series T J = 125C Per Junction Conduction Period Fig. 2 - On-state Power Loss Characteristics Maximum Allowable Case Temperature (C) 130 Instantaneous On-state Current (A) Fig. 3 - On-state Power Loss Characteristics 1000 Fully Turned-on 120 110 100 90 80 70 0 5 10 15 20 25 30 35 40 45 Total Output Current (A) P400 Series Per Module 180 (Sine) T J = 25 C T J = 125 C 180 (Rect) 100 10 P400 Series Per Junction 1 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 Instantaneous On-state Voltage (V) Fig. 4 - Current Ratings Characteristics Fig. 5 - On-state Voltage Drop Characteristics www.irf.com 5 P400 Series Bulletin I2776 rev. E 04/99 Peak Half Sine Wave On-state Current (A) 350 325 300 275 250 225 200 175 150 P400 Series Per Junction At Any Rated Load Condition And With Rated V RRM Applied Following Surge. Initial T J= 125C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s Peak Half Sine Wave On-state Current (A) 400 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained. Initial T J = 125C No Voltage Reapplied Rated VRRM Reapplied 350 300 250 200 P400 Series Per Junction 150 0.01 0.1 Pulse Train Duration (s) 1 1 10 100 Number Of E qual Amplitude Half Cyc le Curre nt Pulses (N) Fig. 6 - Maximum Non-Repetitive Surge Current 10 Steady State Value: R thJC = 1.05 K/W (DC Operation) 1 Fig. 7 - Maximum Non-Repetitive Surge Current Transient Thermal Impedance Z thJC (K/W) 0.1 P400 Series Per Junction 0.01 0.0001 0.001 0.01 Square Wave Pulse Duration (s) 0.1 1 Fig. 8 - Thermal Impedance ZthJC Characteristics 100 Instantaneous Gate Voltage (V) Rectangular gate pulse a)Recommended load line for rated di/dt : 10V, 20 ohms, tr <= 1s b)Recommended load line for rated di/dt : 10 V, 65 ohms, tr <= 1s (a) (1) (2) (3) (4) PGM PGM PGM PGM = = = = 100 W, tp = 500 s 50 W, tp = 1 ms 20 W, tp = 25 ms 10 W, tp = 5 ms 10 (b) TJ = -40 C TJ = 25 C TJ = 125 C 1 (4) (3) (2) (1) VGD IGD 0.1 0.001 0.01 P400 Series 0.1 1 Frequency Limited By PG(AV) 10 100 Instantaneous Gate Current (A) Fig. 9 - Gate Characteristics 6 www.irf.com P400 Series Bulletin I2776 rev. E 04/99 WORLD HEADQUARTERS: EUROPEAN HEADQUARTERS: IR CANADA: IR GERMANY: IR ITALY: IR FAR EAST: IR SOUTHEAST ASIA: IR TAIWAN: 233 Kansas St., El Segundo, California 90245 U.S.A. Tel: (310) 322 3331. Fax: (310) 322 3332. Hurst Green, Oxted, Surrey RH8 9BB, U.K. Tel: ++ 44 1883 732020. Fax: ++ 44 1883 733408. 15 Lincoln Court, Brampton, Markham, Ontario L6T3Z2. Tel: (905) 453 2200. Fax: (905) 475 8801. Saalburgstrasse 157, 61350 Bad Homburg. Tel: ++ 49 6172 96590. Fax: ++ 49 6172 965933. Via Liguria 49, 10071 Borgaro, Torino. Tel: ++ 39 11 4510111. Fax: ++ 39 11 4510220. K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo, Japan 171. Tel: 81 3 3983 0086. 1 Kim Seng Promenade, Great World City West Tower,13-11, Singapore 237994. Tel: ++ 65 838 4630. 16 Fl. Suite D.207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan. Tel: 886 2 2377 9936. http://www.irf.com Fax-On-Demand: +44 1883 733420 Data and specifications subject to change without notice. www.irf.com 7 |
Price & Availability of P423
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |