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| DATA SHEET N-CHANNEL GaAs MES FET NE6500379A 3W L, S-BAND POWER GaAs MESFET DESCRIPTION The NE6500379A is a 3W GaAs MESFET designed for middle power transmitter applications for mobile communication handset and base station systems. It is capable of delivering 3 watt of output power (CW) with high linear gain, high efficiency and excellent distortion. Reliability and performance uniformity are assured by NEC's stringent quality and control procedures. FEATURES * High Output Power * High Linear Gain : Po (1dB) = +35 dBm typ. : 10 dB typ. * High Power Added Efficiency: 50% typ. @VDS = 6 V, IDset = 500 mA, f = 1.9 GHz ORDERING INFORMATION Part Number NE6500379A-T1 79A Package Supplying Form 12 mm tape width, 1 kpcs/reel Remark To order evaluation samples, please contact your local NEC sales office. (Part number for sample order: NE6500379A) ABSOLUTE MAXIMUM RATINGS (TA = 25C) Operation in excess of any one of these parameters may result in permanent damage. Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Gate Current Total Power Dissipation Channel Temperature Storage Temperature Symbol VDS VGSO ID IG PT Tch Tstg Ratings 15 -7 5.6 50 21 150 -65 to +150 Unit V V A mA W C C Caution Please handle this device at static-free workstation, because this is an electrostatic sensitive device. The information in this document is subject to change without notice. Document No. P13495EJ2V0DS00 (2nd edition) Date Published August 1998 N CP(K) Printed in Japan The mark shows major revised points. (c) 1998 NE6500379A RECOMMENDED OPERATING LIMITS Characteristics Drain to Source Voltage Gain Compression Channel Temperature Symbol VDS Gcomp Tch Test Conditions MIN. TYP. 6.0 MAX. 6.0 3.0 +125 Unit V dB C ELECTRICAL CHARACTERISTICS (TA = 25C, Unless otherwise specified, using NEC standard test fixture.) Characteristics Saturated Drain Current Pinch-off Voltage Gate to Drain Break Down Voltage Thermal Resistance Output Power at 1 dB Gain Compression Point Drain Current Power Added Efficiency Linear Gain Note 1 Symbol IDSS Vp BVgd Test Conditions VDS = 2.5 V, VGS = 0 V VDS = 2.5 V, ID = 21 mA Igd = 21 mA MIN. TYP. 4.5 MAX. Unit A -3.6 17 -1.6 V V Rth Po(1dB) Channel to Case f = 1.9 GHz, VDS = 6.0 V Rg = 30 5 35.0 6 C/W dBm ID IDset = 500 mA (RF OFF) Note 2 9.0 1.0 50 10.0 A % dB add GL Notes 1. Pin = 0 dBm 2. DC performance is 100% testing. RF performance is testing several samples per wafer. Wafer rejection criteria for standard devices is 1 reject for several samples. 2 NE6500379A OUTPUT POWER, DRAIN CURRENT AND GATE CURRENT vs. INPUT POWER 40 VDS = 6 V IDset = 500 mA (RF OFF) Rg = 30 f = 1.9 GHZ 20 1500 35 Pout 15 30 10 Pout [dBm] IG [mA] 1000 25 5 20 IG 0 15 500 10 0 5 10 15 Pin [dBm] 20 25 30 35 -5 0 ID [mA] ID 3 NE6500379A APPLICATION CIRCUIT EXAMPLE (Unit: mm) VGS VDS Rg Tantalum Condenser 47 F 1000 p Tantalum Condenser 100 F /4 OPEN STUB 19 2 5 C1 6 4 INPUT 4.5 8 25 2 3 4 4 /4 LINE 5 5 13 /4 OPEN STUB 50 LINE 3 5 5 C2 1 1 4 6.5 4 32.5 2 3 3 1 OUTPUT GND f = 1.9 GHZ VDS = 6 V IDset = 500 mA (RF OFF) C1 = 30 pF C2 = 30 pF Rg = 30 Substrate: Teflon glass ( r = 2.6) t = 0.8 mm 4 NE6500379A NE6500379A S-PARAMETERS TEST CONDITIONS: VDS = 6.0 V, IDset = 500 mA FREQUENCY MHz 1400 1450 1500 1550 1600 1650 1700 1750 1800 1850 1900 1950 2000 2050 2100 2150 2200 MAG. 0.950 0.946 0.950 0.947 0.967 0.948 0.946 0.944 0.945 0.947 0.944 0.939 0.945 0.944 0.945 0.936 0.950 S11 ANG. (deg.) 173.0 172.6 171.9 171.4 171.6 170.3 169.8 169.0 168.5 167.8 167.1 166.2 165.5 164.9 163.9 163.4 162.4 MAG. 0.933 0.906 0.884 0.851 0.847 0.818 0.816 0.762 0.787 0.742 0.716 0.704 0.665 0.655 0.641 0.621 0.592 S21 ANG. (deg.) 93.1 91.6 92.8 93.3 94.0 92.5 94.8 93.0 91.1 94.4 88.6 92.6 91.1 93.3 89.6 96.7 91.0 MAG. 0.019 0.020 0.019 0.020 0.020 0.021 0.021 0.022 0.022 0.022 0.024 0.022 0.024 0.023 0.024 0.024 0.026 S12 ANG. (deg.) 54.0 54.9 58.1 58.3 61.0 62.7 63.2 63.8 67.7 66.2 68.4 68.5 69.3 68.2 73.0 69.6 75.8 MAG. 0.833 0.841 0.832 0.837 0.847 0.838 0.835 0.838 0.836 0.833 0.835 0.835 0.831 0.834 0.831 0.828 0.828 S22 ANG. (deg.) 170.5 170.5 169.6 169.6 170.2 168.8 168.2 168.0 166.8 166.9 165.6 165.8 164.9 164.5 162.9 162.4 161.7 5 NE6500379A 79A Package Dimensions (Unit: mm) 1.5 0.2 4.2 max. Source Source Gate 5.7 max. 0.6 0.15 Drain 1.0 max. 0.8 0.15 4.4 max. Gate Drain 1.2 max. 0.8 max. 3.6 0.2 Bottom View 0.4 0.15 5.7 max. 0.9 0.2 0.2 0.1 79A Package Recommended P.C.B. Layout (Unit: mm) 4.0 1.7 Stop up the hole with a rosin or something to avoid solder flow. Drain Gate 5.9 1.2 Source through hole 0.2 x 33 0.5 0.5 0.5 6.1 6 1.0 NE6500379A RECOMMENDED SOLDERING CONDITIONS This product should be soldered under the following recommended conditions. For soldering methods and conditions other than those recommended below, contact your NEC sales representative. Recommended Condition Symbol IR35-00-2 Soldering Method Infrared Reflow Soldering Conditions Package peak temperature: 235C or below Time: 30 seconds or less (at 210C) Note Count: 2, Exposure limit : None Pin temperature: 260C Time: 5 seconds or less (per pin row) Note Exposure limit : None Partial Heating - Note After opening the dry pack, keep it in a place below 25C and 65% RH for the allowable storage period. Caution Do not use different soldering methods together (except for partial heating). 7 |
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