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| IPD14N03L OptiMOS(R) Buck converter series Feature * N-Channel Product Summary VDS RDS(on) ID 30 13.5 30 P- TO252 -3-11 V m A * Logic Level * Low On-Resistance RDS(on) * Excellent Gate Charge x RDS(on) product (FOM) * Superior thermal resistance * 175C operating temperature * Avalanche rated * dv/dt rated * Ideal for fast switching buck converter Type IPD14N03L Package Ordering Code Marking 14N03L P- TO252 -3-11 Q67042-S4111 Maximum Ratings, at Tj = 25 C, unless otherwise specified Parameter Continuous drain current1) TC=25C Symbol ID Value 30 30 Unit A Pulsed drain current TC=25C I D puls EAS EAR dv/dt VGS Ptot T j , Tstg 120 20 7 6 20 75 -55... +175 55/175/56 kV/s V W C mJ Avalanche energy, single pulse ID=20A, VDD=25V, RGS=25 Repetitive avalanche energy, limited by Tjmax2) Reverse diode dv/dt IS=30A, VDS=-V, di/dt=200A/s, Tjmax=175C Gate source voltage Power dissipation TC=25C Operating and storage temperature IEC climatic category; DIN IEC 68-1 Page 1 2003-01-17 IPD14N03L Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 3) Symbol min. RthJC RthJA RthJA - Values typ. 1.3 max. 2 100 75 50 Unit K/W Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Static Characteristics Drain-source breakdown voltage V GS=0V, I D=1mA Symbol min. V(BR)DSS VGS(th) I DSS I GSS RDS(on) RDS(on) 30 1.2 Values typ. 1.6 max. 2 Unit V Gate threshold voltage, VGS = VDS ID = 30 A Zero gate voltage drain current V DS=30V, V GS=0V, Tj=25C V DS=30V, V GS=0V, Tj=125C A 0.01 10 1 16.1 10.8 1 100 100 20 13.5 nA m Gate-source leakage current V GS=20V, VDS=0V Drain-source on-state resistance V GS=4.5V, ID=20A Drain-source on-state resistance V GS=10V, ID=20A 1Current limited by bondwire ; with an R thJC = 2K/W the chip is able to carry ID= 59A at 25C, for detailed information see app.-note ANPS071E available at www.infineon.com/optimos 2Defined by design. Not subject to production test. 3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical without blown air. Page 2 2003-01-17 IPD14N03L Electrical Characteristics Parameter Dynamic Characteristics Transconductance Input capacitance Output capacitance Reverse transfer capacitance Gate resistance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Output charge Gate plateau voltage Reverse Diode Inverse diode continuous forward current Inv. diode direct current, pulsed Inverse diode forward voltage Reverse recovery time Reverse recovery charge ISM VSD trr Qrr VGS =0V, I F=30A VR =-V, IF=lS, diF /dt=100A/s Symbol Conditions min. Values typ. 48 740 290 80 1.5 5.9 30.4 26.6 11 max. 990 385 120 8.9 45.6 39.9 21 Unit g fs Ciss Coss Crss RG t d(on) tr t d(off) tf V DS2*I D*RDS(on)max, ID=20A V GS=0V, V DS=25V, f=1MHz 24 - S pF ns V DD=15V, VGS=10V, ID=15A, RG=8.5 Q gs Q gd Qg Q oss V DD=15V, ID=15A - 2.5 6.2 10.6 10.24 3.4 3.1 9.3 13.3 12.8 - nC V DD=15V, ID=15A, V GS=0 to 5V V DS=15V, ID=15A, V GS=0V nC V V(plateau) V DD=15V, ID=15A IS TC=25C - 0.9 21.7 13.7 30 120 1.2 A V 27.1 ns 17.2 nC Page 3 2003-01-17 IPD14N03L 1 Power dissipation Ptot = f (TC) IPD14N03L 2 Drain current ID = f (TC) parameter: V GS 10 V IPD14N03L 80 32 W A 60 24 P tot 50 ID 20 40 60 80 100 120 140 160 C 190 20 40 16 30 12 20 8 10 4 0 0 0 0 20 40 60 80 100 120 140 160 C 190 TC TC 3 Safe operating area ID = f ( V DS ) parameter : D = 0 , TC = 25 C 10 3 IPD14N03L 4 Max. transient thermal impedance ZthJC = f (t p) parameter : D = t p/T 10 1 IPD14N03L K/W A 10 0 tp = 5.7s 10 2 ID DS (on ) = V DS 10 s ZthJC 10 -1 R /I D 100 s D = 0.50 0.20 10 1 1 ms 0.10 10 -2 0.05 single pulse 0.02 0.01 10 ms DC 10 0 -1 10 10 -3 -7 10 10 0 10 1 V 10 2 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 VDS Page 4 tp 2003-01-17 IPD14N03L 5 Typ. output characteristic ID = f (VDS); Tj=25C parameter: tp = 80 s 75 IPD14N03L Ptot = 75W 6 Typ. drain-source on resistance RDS(on) = f (ID) parameter: V GS 50 IPD14N03L A k VGS [V] a m 2.6 2.8 3.0 3.2 3.4 3.6 3.8 4.0 4.2 4.5 10.0 f g h i j 60 j b c d e 40 55 RDS(on) 35 30 25 20 15 k ID 50 45 40 35 30 g h i f g h i j k 25 20 15 10 5 0 0 1 2 3 4 c a b e d f 10 VGS [V] = 5 f 3.6 g 3.8 h i 4.0 4.2 j 4.5 k 10.0 V 6 0 0 10 20 30 40 50 A 65 VDS ID 7 Typ. transfer characteristics ID= f ( VGS ); VDS 2 x ID x RDS(on)max parameter: tp = 80 s 100 8 Typ. forward transconductance g fs = f(ID); Tj=25C parameter: gfs S 70 A 80 70 60 55 50 gfs 60 50 40 30 20 10 0 0 1 2 3 4 5.5 V VGS ID 45 40 35 30 25 20 15 10 5 0 0 20 40 60 80 A ID 120 Page 5 2003-01-17 IPD14N03L 9 Drain-source on-state resistance RDS(on) = f (Tj) parameter : ID = 20 A, VGS = 10 V IPD14N03L 10 Typ. gate threshold voltage VGS(th) = f (Tj) parameter: V GS = VDS 2.5 32 m V 300A RDS(on) 20 V GS(th) 98% 24 1.5 16 30A 12 typ 1 8 0.5 4 0 -60 -20 20 60 100 140 C 200 0 -60 -20 20 60 100 C 180 Tj Tj 11 Typ. capacitances C = f (VDS) parameter: V GS=0V, f=1 MHz 10 4 12 Forward character. of reverse diode IF = f (VSD) parameter: Tj , tp = 80 s 10 3 IPD14N03L pF Ciss 10 3 A 10 2 C Coss 10 2 Crss IF 10 1 Tj = 25 C typ Tj = 175 C typ Tj = 25 C (98%) Tj = 175 C (98%) 10 1 0 10 0 0 5 10 15 20 V VDS 30 0.4 0.8 1.2 1.6 2 2.4 V 3 VSD Page 6 2003-01-17 IPD14N03L 13 Typ. avalanche energy EAS = f (Tj) par.: ID = 20 A, VDD = 25 V, RGS = 25 20 15 Drain-source breakdown voltage V(BR)DSS = f (Tj ) parameter: ID=10 mA IPD14N03L 36 mJ 16 V V(BR)DSS 34 33 32 E AS 14 12 10 31 8 30 6 4 2 0 25 29 28 27 -60 45 65 85 105 125 145 C 185 Tj -20 20 60 100 140 C 200 Tj 14 Typ. gate charge VGS = f (QGate ) parameter: ID = 15 A pulsed IPD14N03L 16 V 12 VGS 10 0.2 VDS max 8 0.5 V DS max 0.8 VDS max 6 4 2 0 0 4 8 12 16 20 24 nC 30 Q Gate Page 7 2003-01-17 IPD14N03L Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 Munchen (c) Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Page 8 2003-01-17 |
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