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CCD30-11 Open Electrode High Performance CCD Sensor
FEATURES
* * * * * * * * *
1024 by 256 Pixel Format 26 mm Square Pixels Image Area 26.6 x 6.7 mm Wide Dynamic Range Symmetrical Anti-static Gate Protection Open Electrode Structure for Enhanced Quantum Efficiency Advanced Inverted Mode Operation Anti-blooming Readout Register Zero Light Emitting Output Amplifier
APPLICATIONS
* * *
Spectroscopy Scientific Imaging TDI Operation
TYPICAL PERFORMANCE
Pixel readout frequency . Output amplifier sensitivity Peak signal . . . . . Dynamic range . . . . Spectral range . . . . Readout noise (at 140 K, 20 QE at 700 nm . . . . Peak output voltage . . .. .. .. .. .. kHz) .. .. . . . . . . . . . 20 - 1000 kHz . . . . 1.5 mV/e7 . . . 300 ke7/pixel . 75 000:1 200 - 1060 nm ....4 e7 rms ... 50 % . . . 450 mV
INTRODUCTION
The open electrode CCD30-11 is a high performance CCD sensor designed as an upgrade for the standard CCD30-11, for use in the scientific spectroscopy instrument market, where enhanced quantum efficiency is required at near-ultraviolet wavelengths. With an array of 1024 x 256 26 mm square pixels it has an imaging area to suit most spectrometer outputs of 26.6 x 6.7 mm (1.05 x 0.26 inch). The readout register is organised along the long (1024 pixel) edge of the sensor and contains an anti-blooming drain to allow high speed binning operations of low level signals which may be adjacent to much stronger signals. The novel output amplifier design has no light emission. Standard three phase clocking and buried channel charge transfer are employed and Inverted Mode Operation (IMO) is included as standard. The open electrode CCD30-11 is packaged in a 20-pin DIL ceramic package and is pin compatible (but not completely clock compatible) with the standard CCD30-11. Designers are advised to consult e2v technologies should they be considering using CCD sensors in abnormal environments or if they require customised packaging.
GENERAL DATA
Format
Image area . . Active pixels (H) (V) Pixel size . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26.6 x 6.7 .. 1024 . . . 256 . . 26 x 26 mm
mm
Package
Package size . . Number of pins . Inter-pin spacing Inter-row spacing Window material . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 32.89 x 20.07 mm ....... 20 ..... 2.54 mm . . . . . 15.24 mm quartz or removable glass
e2v technologies (uk) limited, Waterhouse Lane, Chelmsford, Essex CM1 2QU, UK Telephone: +44 (0)1245 493493 Facsimile: +44 (0)1245 492492 e-mail: enquiries@e2v.com Internet: www.e2v.com Holding Company: e2v technologies plc e2v technologies inc. 4 Westchester Plaza, PO Box 1482, Elmsford, NY10523-1482 USA Telephone: (914) 592-6050 Facsimile: (914) 592-5148 e-mail: enquiries@e2vtechnologies.us
# e2v technologies (uk) limited 2005
A1A-100008 Issue 8, February 2005
411/8893
PERFORMANCE
Min Peak charge storage (see note 1) Peak output voltage (unbinned) Dark signal at 293 K (see note 2) Charge transfer efficiency (see note 3): parallel serial Output amplifier sensitivity Readout noise at 140 K (see note 4) Readout frequency (see note 5) Response non-uniformity (std. deviation) Dark signal non-uniformity at 293 K (std. deviation) Output node capacity relative to image section 200k - - - - 1.3 - - - - - Typical 300k 450 250 99.9999 99.9993 1.8 4 20 3 100 4.0 Max - - 500 - - 2.3 6 5000 10 200 - e7/pixel mV e7/pixel/s % % mV/e7 7 rms e /pixel kHz % of mean e7/pixel/s
ELECTRICAL INTERFACE CHARACTERISTICS
Electrode capacitances (measured at mid-clock level):
Min I1/I1 interphase R1/R1 interphase I1/SS R1/SS Output impedance - - - - - Typical 2.0 70 11 185 300 White spots Max - - - - - nF pF nF pF O
NOTES
1. Signal level at which resolution begins to degrade. 2. The typical average (background) dark signal at any temperature T (kelvin) between 230 and 300 K is given by: Qd/Qd0 = 1.14 x 106T3e79080/T where Qd0 is the dark current at 293 K. Note that this is typical performance and some variation may be seen between devices. Below 230 K additional dark current components with a weaker temperature dependence may become significant. 3. CCD characterisation measurements made using charge generated by X-ray photons of known energy. 4. Measured using a dual-slope integrator technique (i.e. correlated double sampling) with a 10 ms integration period. 5. Readout above 5000 kHz can be achieved but performance to the parameters given cannot be guaranteed.
Are counted when they have a generation rate 100 times the specified maximum dark signal generation rate at 293 K (measured between 233 and 273 K). The typical temperature dependence of white spot blemishes is different from that of the average dark signal and is given by: Qd/Qd0 = 122T3e76400/T A column which contains at least 9 white defects. A column which contains at least 9 black defects. 0 0 0 2 1 0 0 1 10 1 1 0 3 2 0 0 2 10 2 6 0 15 8 1 0 5 15
White column Black column GRADE
BLEMISH SPECIFICATION
Pixels where charge is temporarily held. Traps are counted if they have a capacity greater than 200 e7 at 233 K. Slipped columns Are counted if they have an amplitude greater than 200 e7. Black spots Are counted when they have a responsivity of less than 90% of the local mean signal illuminated at approximately half saturation. Traps
Column defects: black or slipped white Black spots: 53 pixels 55 pixels 510 pixels 410 pixels Traps 4200 e7 White spots
Minimum separation between adjacent black columns . . . . . . . . . 50 pixels Note The effect of temperature on defects is that traps will be observed less at higher temperatures but more may appear below 233 K. The amplitude of white spots and columns will decrease rapidly with temperature.
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TYPICAL OUTPUT CIRCUIT NOISE (Measured using clamp and sample)
15
7180A
PREDICTED
NOISE EQUIVALENT SIGNAL (e-- rms)
10
5
MEASURED AT 180 K
0 10k FREQUENCY (Hz)
50k
100k
500k
1M
5M
TYPICAL SPECTRAL RESPONSE (No window)
60
7386A
50
40
QUANTUM EFFICIENCY (%)
30
20
10
0 200 300 400 WAVELENGTH (nm)
500
600
700
800
900
1000
1100
Note
UV QE varies rapidly with wavelength over the 200 to 400 nm range due to the thick AR coating.
TYPICAL VARIATION OF DARK SIGNAL WITH SUBSTRATE VOLTAGE
105
7134C
104 TYPICAL RANGE
DARK CURRENT (e7/pixel/s)
103
102
0 1 2 SUBSTRATE VOLTAGE (V)
3
4
5
6
7
8
9
10
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TYPICAL VARIATION OF DARK CURRENT WITH TEMPERATURE
104
7329
103
102
10 DARK CURRENT (e7/pixel/s)
1
1071
1072 740 720 PACKAGE TEMPERATURE (8C)
0
20
40
DEVICE SCHEMATIC
7135A
20 8 BLANK ELEMENTS
SG 19
DD 18
17
SS 16
RD 15
OD 14
OS 13
OG 12
11 8 BLANK ELEMENTS
SUB
READ-OUT REGISTER
IMAGE SECTION
1024 X 256 ACTIVE ELEMENTS
TOP VIEW
1
2 I13
3 I12
4 I11
5 SS
6 1R
7 R13
8 R12
9 R11
10
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CONNECTIONS, TYPICAL VOLTAGES AND ABSOLUTE MAXIMUM RATINGS
PULSE AMPLITUDE OR DC LEVEL (V) (see note 6) Min Typical Max - 10 10 10 8 10 10 10 10 12 12 12 9.5 12 12 12 12 see note 7 see note 7 2 27 17 8 20 0 3.5 see note 8 29 18 9.5 - 22 0 - 25 VSS+19 31 19 11 5 15 15 15 11 15 15 15 15 MAXIMUM RATINGS with respect to VSS - +20 V +20 V +20 V - +20 V +20 V +20 V +20 V - - +20 V 70.3 to +25 V 70.3 to +25 V 70.3 to +25 V 70.3 to +25 V - 70.3 to +25 V +20 V -
PIN 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20
REF - I13 I12 I11 SS 1R R13 R12 R11 - - OG OS OD RD SS - DD SG -
DESCRIPTION No connection Image section, phase 3 (clock pulse) Image section, phase 2 (clock pulse) Image section, phase 1 (clock pulse) Substrate Output reset pulse Readout register, phase 3 (clock pulse) Readout register, phase 2 (clock pulse) Readout register, phase 1 (clock pulse) No connection No connection Output gate Output transistor source Output drain Reset transistor drain Substrate No connection Diode drain Spare gates No connection
If all voltages are set to the `typical' values, operation at or close to specification should be obtained. Some adjustment within the minimum - maximum range specified may be required to optimise performance. Voltage between pairs of pins: OS to OD + 15 V. Maximum current through any source or drain pin: 10 mA.
OUTPUT CIRCUIT
6923B
RD
1R
I13 (SEE NOTE 9)
OD
R13
OG OS OUTPUT
EXTERNAL LOAD (SEE NOTE 8)
SS
SS
0V
NOTES
6. 7. 8. 9. All pulse low levels 0 + 0.5 V. There is no access to the temperature sensing diodes in the back-thinned version of the CCD30-11. Not critical; can be a 1 - 5 mA constant current source, or 5 - 10 kO resistor. The amplifier has a DC restoration circuit, which is activated internally whenever I13 is pulsed high.
# e2v technologies
100008, page 5
FRAME READOUT TIMING DIAGRAM
READOUT PERIOD 5256 CYCLES I11 CHARGE COLLECTION PERIOD SEE DETAIL OF LINE TRANSFER
7131
I12
I13 SEE DETAIL OF OUTPUT CLOCKING R11
R12
R13
1R
OUTPUT SWEEPOUT FIRST VALID DATA
DETAIL OF LINE TRANSFER
twi
I11
1
7132A
/3 Ti
toi
tli
I12
toi
I13
tli
tdri
Ti
tdir
R11
R12
R13
1R
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# e2v technologies
DETAIL OF OUTPUT CLOCKING
7133A
R11 Tr tor
R12
R13 twx 1R OUTPUT VALID OS SIGNAL OUTPUT tdx
RESET FEEDTHROUGH
LINE OUTPUT FORMAT
7130A
8 BLANK
8 BLANK
1024 ACTIVE OUTPUTS
CLOCK TIMING REQUIREMENTS
Symbol Ti twi tri tfi toi tli tdir tdri Tr trr tfr tor twx trx, tfx tdx Description Image clock period Image clock pulse width Image clock pulse rise time (10 to 90%) Image clock pulse fall time (10 to 90%) Image clock pulse overlap Image clock pulse, two phase low Delay time, I1 stop to R1 start Delay time, R1 stop to I1 start Output register clock cycle period Clock pulse rise time (10 to 90%) Clock pulse fall time (10 to 90%) Clock pulse overlap Reset pulse width Reset pulse rise and fall times Delay time, 1R low to R13 low Min 50 25 5 tri 3 2 3 1 200 50 trr 20 30 20 30 Typical 90 45 20 20 10 10 10 2 see note 11 0.1Tr 0.1Tr 0.5trr 0.1Tr 0.5trr 0.5Tr Max see note see note 0.5toi 0.5toi 0.2Ti 0.2Ti see note see note see note 0.3Tr 0.3Tr 0.1Tr 0.2Tr 0.2Tr 0.8Tr 10 10 ms ms ms ms ms ms ms ms ns ns ns ns ns ns ns
10 10 10
NOTES
10. No maximum other than that necessary to achieve an acceptable dark signal at the longer readout times. 11. As set by the readout period.
# e2v technologies
100008, page 7
OUTLINE
(All dimensions without limits are nominal)
A
6911B
M
20 11
D F
C
B
E
1
10
IMAGING AREA
COVERGLASS SEE NOTE
L
Outline Note
PIN 1
G H J
The device is normally supplied with a temporary glass window for protection purposes. It can also be supplied with a fixed, quartz or fibre-optic window where required.
K
Ref A B C D E F G H J K L M
Millimetres 32.89 + 0.38 20.07 + 0.25 6.7 3.30 + 0.33 15.24 + 0.25 + 0.051 0.254 7 0.025 5.21 0.46 + 0.05 2.54 + 0.13 22.86 + 0.13 1.65 + 0.56 26.6
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# e2v technologies
ORDERING INFORMATION
Options include:
* * *
HANDLING CCD SENSORS
CCD sensors, in common with most high performance MOS IC devices, are static sensitive. In certain cases a discharge of static electricity may destroy or irreversibly degrade the device. Accordingly, full antistatic handling precautions should be taken whenever using a CCD sensor or module. These include:* * * *
Temporary Quartz Window Permanent Quartz Window Temporary Glass Window
For further information on the performance of these and other options, please contact e2v technologies.
Working at a fully grounded workbench Operator wearing a grounded wrist strap All receiving socket pins to be positively grounded Unattended CCDs should not be left out of their conducting foam or socket.
Evidence of incorrect handling will invalidate the warranty. All devices are provided with internal protection circuits to the gate electrodes (pins 2, 3, 4, 6, 7, 8, 9, 12, 19) but not to the other pins.
HIGH ENERGY RADIATION
Device parameters may begin to change if subject to an ionising dose of greater than 104 rads. Certain characterisation data are held at e2v technologies. Users planning to use CCDs in a high radiation environment are advised to contact e2v technologies.
TEMPERATURE LIMITS
Min Typical Max Storage . . . . . . . 73 - 373 K Operating . . . . . . . 73 233 323 K Operation or storage in humid conditions may give rise to ice on the sensor surface, causing irreversible damage. Device heating/cooling . . . . . . . 5 K/min max
Whilst e2v technologies has taken care to ensure the accuracy of the information contained herein it accepts no responsibility for the consequences of any use thereof and also reserves the right to change the specification of goods without notice. e2v technologies accepts no liability beyond that set out in its standard conditions of sale in respect of infringement of third party patents arising from the use of tubes or other devices in accordance with information contained herein.
# e2v technologies
Printed in England
100008, page 9

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