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| BGA 318 Silicon Bipolar MMIC-Amplifier Preliminary data * Cascadable 50 -gain block * 16 dB typical gain at 1.0 GHz * 12 dBm typical P-1dB at 1.0 GHz * 3 dB-bandwidth: DC to 1.2 GHz 1 RF OUT/Bias 3 4 2 1 VPS05178 RF IN 3 Circuit Diagram 2, 4 EHA07312 GND Type Marking Ordering Code Q62702-G0043 Pin Configuration 1 RFout/bias 2 GND 3 RFinput Package 4 GND SOT-143 BGA 318 BNs Maximum Ratings Parameter Device current Symbol Value 60 250 5 150 -65 ...+150 -65 ...+150 Unit mA mW dBm C ID Ptot PRFin Tj TA T stg 1) Total power dissipation, T S 99 C RF input power Junction temperature Ambient temperature Storage temperature Thermal Resistance Junction - soldering point RthJS 205 K/W 1) TS is measured on the collector lead at the soldering point to the pcb Semiconductor Group Semiconductor Group 11 Sep-04-1998 1998-11-01 BGA 318 Electrical Characteristics at TA = 25 C, unless otherwise specified. Symbol Values Parameter min. AC characteristics (VD = 4.7 V, Zo = 50 ) Insertion power gain |S21| 2 |S 21|2 18 16 12 +-0.7 typ. max. Unit dB f = 0.1 GHz f = 1 GHz f = 1.8 GHz Insertion point gain flatness f = 0.1 GHz to 0.6 GHz Noise figure NF 3.5 4 5 12 14 10 dBm dB f = 0.1 GHz f = 1 GHz f = 2 GHz 1dB compression point P-1dB RL in RL out f = 1 GHz Return loss input f = 0.1 GHz to 2 GHz Return loss output f = 0.1 GHz to 3 GHz Typical biasing configuration min. VCC = 7 V R Bias D RFC (optional) 4 3 2 EHA07313 Semiconductor Group Semiconductor Group 22 C Block IN 1 C Block VD OUT RBias = VCC - VD / ID VD = 4.7V Sep-04-1998 1998-11-01 BGA 318 S-Parameters at T A = 25 C f GHz S11 MAG ANG MAG S21 ANG MAG S12 ANG MAG S22 ANG VD = 4.7 V, Z o = 50 0.01 0.196 0.2 0.1 0.193 -4.8 0.3 0.194 -14.4 0.5 0.191 -25.9 0.8 0.184 -45 1 0.175 -60.3 1.9 0.185 -130.6 2.4 0.241 -170.6 3 0.298 159.6 8.01 8 7.75 7.28 6.43 5.83 3.91 2.99 2.38 178.9 171.6 155.4 139.9 119.1 106.8 67.6 45.5 27.6 0.077 0.078 0.082 0.089 0.105 0.117 0.164 0.193 0.218 0.6 4.9 13.8 21.1 27.9 30.2 30.2 26.8 22.8 0.327 0.324 0.312 0.294 0.26 0.238 0.184 0.173 0.178 -0.5 -8.6 -25 -41.2 -62.9 -76.2 -113 -124.4 -131.2 Insertion power gain |S21 |2 = f ( f ) Noise figure NF = f ( f ) VD = 4.7V, ID = 35 mA 25 VD = 4.7V, ID = 35 mA 10 dB dB |S21|2 15 NF 0 1 6 10 4 5 2 0 -1 10 10 GHz 10 0 -1 10 10 0 GHz 10 1 f f Semiconductor Group Semiconductor Group 33 Sep-04-1998 1998-11-01 |
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