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TDA8931
Power comparator 1 x 20 W
Rev. 01 -- 14 January 2004 Preliminary data sheet
1. General description
The TDA8931 is a switching power stage for high efficiency class-D audio power amplifier systems. It contains a Single-Ended (SE) power stage, drive logic, protection control logic, a full differential input comparator and a HVP charger to charge the SE capacitor. With this amplifier a compact 1 x 20 W closed loop self-oscillating digital amplifier system can be built. The TDA8931 has a high efficiency so that a heat sink is not required up to 20 W (RMS). The system operates on an asymmetrical and a symmetrical supply voltage.
2. Features
s s s s s s s High efficiency Operating voltage asymmetrical from 12 V to 35 V Operating voltage symmetrical from 6 V to 17.5 V Thermally protected No heat sink required Charger for single-ended capacitor No pop sound
3. Applications
s s s s s Flat panel television sets Flat panel monitors Multimedia systems Wireless speakers Micro systems
4. Quick reference data
Table 1: General VP Iq Istb Isleep operating supply voltage quiescent current standby current sleep current asymmetrical symmetrical Operating mode; VP = 22 V Standby mode; VP = 22 V Sleep mode; VP = 22 V 12 6 22 11 20 10 100 35 30 15 200 V mA mA A 17.5 V Quick reference data Conditions Min Typ Max Unit Symbol Parameter
Philips Semiconductors
TDA8931
Power comparator 1 x 20 W
Quick reference data ...continued Conditions Po = 15 W; Vp = 30 V; RL = 8 Min 89 Typ 91 Max Unit % efficiency
Table 1:
Symbol Parameter
SE channel Po maximum output power RL = 4 ; THD = 10 % VP = 26 V VP = 22 V RL = 8 ; THD = 10 % VP = 30 V 15 16 W 21 15 22 16 W W
5. Ordering information
Table 2: Type number TDA8931T Ordering information Package Name SO20 Description Version plastic small outline package; 20 leads; body width 7.5 mm SOT163-1
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Preliminary data sheet
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Philips Semiconductors
TDA8931
Power comparator 1 x 20 W
6. Block diagram
17 VDDA INP INN VSSA 5 4 3 2
BOOT VDDP
TDA8931
comparator DRIVER HIGH CONTROL DRIVER LOW
18
16
OUT
15
VSSP
STABILIZER 12V 6 VSSD VDDP ENABLE CGND 7 9 ODP VSSP CONTROL OTP VDDP OCP 12
14
STABI
POWERUP
13
HVP
19 OVP VSSP 8 HEAT SPREADER 1 VSSD 10 VSSD 11 VSSD 20 VSSD
001aab807
OVP
HVPI
UVP
DIAG
Fig 1. Block diagram
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Preliminary data sheet
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Philips Semiconductors
TDA8931
Power comparator 1 x 20 W
7. Pinning information
7.1 Pinning
VSSD VSSA INN INP VDDA POWERUP ENABLE DIAG CGND
1 2 3 4 5 6 7 8 9
20 VSSD 19 HVPI 18 VDDP 17 BOOT
TDA8931
16 OUT 15 VSSP 14 STABI 13 HVP 12 OVP 11 VSSD
VSSD 10
001aab811
Fig 2. Pin configuration
7.2 Pin description
Table 3: Symbol VSSD VSSA INN INP VDDA POWERUP ENABLE DIAG CGND VSSD VSSD OVP HVP STABI VSSP OUT BOOT VDDP HVPI VSSD Pin description Pin 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 Description negative digital supply voltage; heat spreader negative analog supply voltage inverting input non inverting input positive analog supply voltage power-up input enable input diagnostic output control ground; reference ground for pins POWERUP, ENABLE and DIAG negative digital supply voltage; heat spreader negative digital supply voltage; heat spreader overvoltage protection reference input half supply voltage output for charging SE capacitor decoupling of internal stabilizer negative power supply voltage PWM output bootstrap capacitor connection positive power supply voltage half supply voltage output for reference voltage of input circuitry negative digital supply voltage; heat spreader
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Preliminary data sheet
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TDA8931
Power comparator 1 x 20 W
8. Functional description
8.1 General
The TDA8931 is a switching power stage for high efficiency class-D audio power amplifier systems. It contains a Single-Ended (SE) power stage, drive logic, protection control logic, a full differential input comparator and a HVP charger to charge the SE capacitor (see Figure 1). With this amplifier a compact 1 x 20 W closed loop self-oscillating digital amplifier system can be built. A second order low-pass filter converts the PWM output signal into an analog audio signal across the speaker.
8.2 Interfacing
The operating modes of the TDA8931 can be controlled by pins POWERUP and ENABLE. Both pins refer to pin CGND. The device has three modes:
* Sleep mode * Standby mode * Operating mode
When pin POWERUP = LOW, the power comparator is in Sleep mode, independent of the signal on pin ENABLE. In Sleep mode the SE capacitor charger will be discharged. When pin POWERUP = HIGH and pin ENABLE = LOW the device is in Standby mode. In Standby mode the device is DC biased and the SE capacitor will be charged and the output is floating. When both pins POWERUP and ENABLE are HIGH, the device is in Operating mode. A level at pin POWERUP greater than 11 V can also enter the Operating mode, independent of the level on pin ENABLE (see Table 4). Remark: The switch-on sequence is important. First pin POWERUP = HIGH, then pin ENABLE = HIGH.
Table 4: POWERUP < 0.8 V 3 V to 7 V > 11 V Interfacing Mode ENABLE < 0.8 V >3V Sleep Standby Operating Operating
Voltage on pin
8.3 Input comparator
The input comparator has a full differential input and is optimized for low noise and low offset. This results in maximum flexibility in the application.
8.4 Half supply voltage input reference (pin HVPI)
When the device is in Standby mode, the external capacitor C6 (see Figure 5) will be charged until it reaches the half of the supply voltage. This pin charges capacitor C6 within 0.5 seconds.
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Preliminary data sheet
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Philips Semiconductors
TDA8931
Power comparator 1 x 20 W
Pin HVPI will be on its final level of 0.5VP before the device starts switching. This results into a plop-noise free start-up behavior.
8.5 Half supply voltage capacitor charger (pin HVP)
When the device is in Standby mode, the SE capacitor C15 (see Figure 5) will be charged until it reaches the half of the supply voltage. This current charges capacitor C15 within 0.5 seconds when a capacitor of 1000 F is used. When the voltage on pin HVP has reached the level of 0.5VP it releases pin ENABLE for external use. When the device is in Operating mode, pin HVP is switched to floating to minimize dissipation. When the supply voltage drops, capacitor C15 is discharged and the device is switched off to avoid plop noise.
8.6 Protections
Overtemperature, overcurrent, overvoltage and undervoltage sensors are included in the TDA8931. When one of these sensors exceeds its threshold level the output power stage is switched off and the output stage becomes floating. After 1.5 s the device will try to restart. When the fault condition is removed the output stage is switched on.
Table 5: Protection Symbol OTP OCP OVP UVP ODP Condition Tj > 150 C IO > IOCP VP > VP(OVP)fix VP < VP(UVP) IO > IOCP and Tj > 140 C LOW recovering by switching pin POWERUP: first to Sleep mode and then to Standby mode recovering by removing supply voltage
[1] Pin DIAG = LOW for minimal 1.5 s.
Overview protections Output pin DIAG LOW [1] Remark self recovering when fault is removed
8.6.1 Overtemperature protection (OTP)
If the junction temperature Tj exceeds the threshold level of approximately 150 C then the device will shut down immediately. The device will start switching again when the temperature drops.
8.6.2 Overcurrent protection (OCP)
If the output current exceeds the maximum output current threshold level (e.g. when the loudspeaker terminals are short-circuited it will be detected by the current protection) the device will shut-down.
8.6.3 Overvoltage protection (OVP)
When the supply voltage applied to the TDA8931 exceeds the maximum supply voltage threshold level the device will shut down. The supply voltage on which the device stops operating is determined by two external resistors R1 and R2.
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Preliminary data sheet
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Philips Semiconductors
TDA8931
Power comparator 1 x 20 W
VPA R1 OVP R2
001aac234
TDA8931
Fig 3. Overvoltage protection setting
The overvoltage protection level can be determined by the formula: R1 + R2 V P ( OVP ) = ------------------- x V OVP R2 Where: VP(OVP) = overvoltage protection level of supply voltage R1 = external resistor R2 = external resistor VOVP = 1.27 V reference voltage. Example: The TDA8931 has to shut down at 24 V. When we choose R2 = 10 k, then R1 has to be 178 k and VP(OVP) becomes 24 V. Remark: When pin OVP is connected to VSSD the VP(OVP)fix level is used. (1)
8.6.4 Undervoltage protection (UVP)
When the supply voltage applied to the TDA8931 drops below the minimum supply voltage threshold level the device is internally set to Standby mode.
8.6.5 Supply voltage drop protection
When the TDA8931T is switched off with the supply, it will be switched off before it reaches the voltage on pin HVP. This prevents switch-off pop noise. This function is not self recovering. The TDA8931T can be recovered by switching to Sleep mode or by removing the supply voltage.
8.6.6 Overdissipation protection (ODP)
In case of a short-circuit across the speaker the dissipation is minimized by the ODP. When the OCP and the OTP are on the same time activated, an over dissipation is defined. The device is set to Sleep mode and is not self-recovering. When pin POWERUP = 0 V or the supply voltage is removed, the device is recovered.
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Preliminary data sheet
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TDA8931
Power comparator 1 x 20 W
9. Internal circuitry
Table 6: Pin 1, 10, 11, 20 Internal circuitry Symbol VSSD
VDDA
Equivalent circuit
1, 10 11, 20
VSSA
001aab815
2
VSSA
VDDA
2
001aab817
3, 4
INN, INP
VDDA
1 k
3
20 %
1 k
4
20 %
001aab816
VSSA
5
VDDA
5
VSSA
VSSD
001aab818
6
POWERUP
VDDA
6
155 k 20 %
CGND
001aab819
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Preliminary data sheet
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Philips Semiconductors
TDA8931
Power comparator 1 x 20 W
Internal circuitry ...continued Symbol ENABLE
7
155 k 20 %
Table 6: Pin 7
Equivalent circuit
CGND
001aab820
8
DIAG
8
001aab821
CGND
9
CGND
VDDA
9
001aab822
VSSD
12
OVP
12 200 k
Vref
VSSD
001aab823
13
HVP
VDDP
13
VSSP
001aab824
14
STABI
17 BOOT
10
14
50 k
VSSP
VSSA
VSSD
001aab825
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Philips Semiconductors
TDA8931
Power comparator 1 x 20 W
Internal circuitry ...continued Symbol VSSP OUT VDDP
16 VDDP 18
Table 6: Pin 15 16 18
Equivalent circuit
15 VSSP
001aab826
17
BOOT
STABI 14
10
17
16 OUT
001aab827
19
HVPI
VDDP
90 k
19
3 k 90 k
VSSP
001aab828
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TDA8931
Power comparator 1 x 20 W
10. Limiting values
Table 7: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VP VENABLE VOVP Vn IORM Pd(max) Tj Tstg Tamb Parameter operating supply voltage maximum voltage on pin ENABLE maximum voltage on pin OVP voltage on all other pins repetitive peak output current maximum power dissipation junction temperature storage temperature ambient temperature Conditions asymmetrical symmetrical Min 12 6 -55 -40 Max 40 20 14 14 8 2.5 150 +150 +85 Unit V V V V A W C C C
VSS - 0.3 VDD + 0.3 V
11. Thermal characteristics
Table 8: Symbol Rth(j-a) Rth(j-p) Rth(j-c)
[1] [2] [3]
Thermal characteristics Parameter thermal resistance junction to pin thermal resistance junction to case Conditions
[1] [2] [3]
Typ 24 16 3
Unit K/W K/W K/W
thermal resistance junction to ambient in free air in free air in free air
Measured in the application board.
Vp = 22 V; RL = 4 ; Vripple = 2 V (p-p); fripple = 100 Hz with feed-forward network (470 k and 15 nF).
Strongly depending on where you measure on the case.
12. Static characteristics
Table 9: Characteristics VP = 22 V; Tamb = 25 C; fcarrier = 290 kHz; unless otherwise specified. Symbol VP Parameter operating supply voltage Conditions VP = VDDP - VSSP asymmetrical symmetrical Iq Istb Isleep quiescent current standby current sleep current with load; filter and snubbers connected Standby mode; SE capacitor charged Sleep mode 12 6 22 11 20 10 100 35 17.5 30 15 200 V V mA mA A Min Typ Max Unit Supply voltage
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Philips Semiconductors
TDA8931
Power comparator 1 x 20 W
Table 9: Characteristics ...continued VP = 22 V; Tamb = 25 C; fcarrier = 290 kHz; unless otherwise specified. Symbol VIL VIH Parameter LOW-level input voltage HIGH-level input voltage Conditions with respect to CGND with respect to CGND Standby mode Operating mode Vhys II VIL VIH Vhys II VO Voff(i)(eq) Vn(i)(eq) Vi(cm) Ii(bias) VHVPI hysteresis voltage input current LOW-level input voltage HIGH-level input voltage hysteresis voltage input current output voltage equivalent input offset voltage equivalent input RMS-noise voltage common mode input voltage bias input current output voltage on pin HVPI Standby and Operating mode 20 Hz < fi < 20 kHz VI = 5 V with respect to VSSD VI = 5 V with respect to CGND with respect to CGND
[1]
Min 3 11 3 11 VSSA + 4 0.5VP - 0.25 0.5VP - 0.25 20 150
Typ 0.5 30 0.3 30 12 24 0.5VP
Max 0.8 7 VP 40 0.8 12 40 14 10 15 VDDA - 5 60 0.5VP + 0.25 0.5VP + 0.25 40 1.35 12
Unit V V V V A V V V A V mV mV V nA V
Power-up input: pin POWERUP
Enable input: pin ENABLE
Internal stabilizer output: pin STABI Comparator full differential input stage: pins INP and INN
Half supply voltage output for input circuitry: pin HVPI
Half supply voltage output to charge SE capacitor: pin HVP VHVP Icharge TOTP VP(OVP)fix VOVP VP(min) output voltage on pin HVP charge current of HVP capacitor overtemperature protection level fixed OVP threshold level adjustable OVP level protection level minimum supply voltage overcurrent protection level level internal fixed
[2]
Standby mode
0.5VP 45 155 37.5 1.27 11
V mA C V V V
Overtemperature protection (OTP) Overvoltage protection (OVP) 35 1.19 10
Undervoltage protection (UVP)
Overcurrent protection (OCP) IOCP
[1] [2]
3.3
4.0
-
A
VIH on pin ENABLE must not exceed VDDA. The overvoltage protection can be controlled external (see Section 8.6.3).
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TDA8931
Power comparator 1 x 20 W
13. Dynamic characteristics
Table 10: Characteristics VP = 22 V; Tamb = 25 C; RL = 4 ; unless otherwise specified. Symbol Po(max) Parameter maximum output power Conditions RL = 4 ; THD = 10 % VP = 26 V VP = 22 V RL = 8 ; THD =10 % VP = 30 V THD Vn(o) total harmonic distortion noise output voltage Po = 1 W, fi = 1 kHz Operating mode; inputs shorted; gain = 20 dB, AES17 brick wall filter Po = 15 W Vp = 22 V; RL = 4 Vp = 30 V; RL = 8 PWM output: pin OUT (see Figure 4) tr tf tdead tr(LH) tr(HL) tW(min) RDSon output voltage rise time output voltage fall time dead time response time of transition from LOW-to-HIGH response time of transition from HIGH-to-LOW minimum pulse width drain-source on-state resistance of output transistor Vi(dif) = 70 mV Vi(dif) = 3.3 V Vi(dif) = 70 mV Vi(dif) = 3.3 V 20 20 0 120 100 120 100 150 0.22 0.3 ns ns ns ns ns ns ns ns
[1] [1] [1] [1] [1]
Min
Typ
Max
Unit
Amplifier; SE channel 21 15 15 22 16 16 0.02 128 0.1 150 W W W % V
Gv(range)
gain adjust range efficiency
[1]
14 87 89
20 89 91
26 -
dB % %
[1]
Measured in the application board.
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TDA8931
Power comparator 1 x 20 W
input Vi(dif) 3.3 V Vi(cm)
tr(LH) VDD
tr(HL)
tW(min)
output Vo
0V
VSS tr tf
time
001aac235
Vi(cm) = (VSSA + 4 V) to (VDDA - 5 V). tdead cannot be represented in the figure. Response time depends on input signal amplitude. The second input pulse is not reproduced with same pulse width by the output due to minimum pulse width limitation.
Fig 4. Timing diagram PWM output
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Preliminary data sheet Rev. 01 -- 14 January 2004
(c) Koninklijke Philips Electronics N.V. 2005. All rights reserved. 9397 750 13847
14. Application information
Philips Semiconductors
C3 2.2 nF R3 3.9 k R4 1 k C4 470 k C6 47 F (25 V) 2.2 nF C7 2.2 nF R5 47 k 15 nF R11(1) C17
R2 6.8 k
VP
R1 10
VP VPA
C2 100 nF C1 470 F (35 V)
VPA VP
C5 100 nF
GND VP
C8 220 pF C9 2.2 F C12 15 nF R8 2.2 k R7 10 L1 22 H C13 100 nF C14 680 nF C15(3) 1000 F (35 V)
VDDA 5 3
VDDP 18
INN
17
BOOT
+ IN -
C11 220 nF
R6 2.2 k
INP POWERUP
C10 220 pF
4
VPA
R9 47 k R13 15 k R12 47 k
6
U1
EN DIAG
16
OUT
TDA8931
7 8 12 9 2 15 VSSP VSSA VSSD VSSD VSSD VSSD 14 1 10 11 20
C16 220 nF
+ OUT -
13 19
HVP HVPI
S1(2)
OVP CGND
STABI
R10 22
001aab812
Power comparator 1 x 20 W
TDA8931
(1) Optional feed forward network to improve SVRR. (2) Standby mode: S1 = closed; Operating mode: S1 = open. (3) The low frequency gain is determined by the capacitor in series with the speaker. The cut-off frequency with a 4 speaker and C15 = 1000 F is 40 Hz.
15 of 31
Fig 5. Typical application diagram with TDA8931 supplied from an asymmetrical supply
Philips Semiconductors
TDA8931
Power comparator 1 x 20 W
Bill of material Part 470 F/35 V 100 nF 2.2 nF 2.2 nF 100 nF 47 F/25 V 2.2 nF 220 pF 2.2 F/16 V 220 pF 220 nF 15 nF 100 nF 680 nF 1000 F/35 V 220 nF 15 nF 10 6.8 k 3.9 k 1 k 47 k 2.2 k 10 2.2 k 47 k 22 470 k 47 k 15 k 22 H TDA8931 Description general purpose SMD 0805 SMD 0805 SMD 0805 SMD 0805 general purpose SMD 0805 SMD 0805 general purpose SMD 0805 SMD 1206 SMD 0805 SMD 0805 MKT general purpose SMD 1206 SMD 0805 SMD 1206 SMD 0805 SMD 0805 SMD 0805 SMD 0805 SMD 0805 SMD 1206 SMD 0805 SMD 0805 SMD 2512 SMD 0805 SMD 0805 SMD 0805 TOKO 11RHBP A7503CY-220M SO20
Table 11: Item C1 C2 C3 C4 C5 C6 C7 C8 C9 C10 C11 C12 C13 C14 C15 C16 C17 R1 R2 R3 R4 R5 R6 R7 R8 R9 R10 R11 R12 R13 L1 U1
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TDA8931
Power comparator 1 x 20 W
14.1 Output power estimation
The output power, just before clipping, can be estimated using the following equation:
2 RL ---------------------------------------------------------------- x V P R L + R DSon + R coil + R ESR = ------------------------------------------------------------------------------------8 x RL
P o ( 1% ) Where:
(2)
Po(1%) = output power just before clipping at THD = 1 % RL = load impedance RDSon = on-resistance power switch Rcoil = series resistance output coil RESR = ESR of the single-ended capacitor VP = supply voltage (VDDP - VSSP) Example: Substituting RL = 4 , RDSon = 0.22 (at Tj = 25 C), Rcoil = 0.045 , RESR = 0.06 and VP = 22 V results in output power Po = 12.9 W. The output power at THD = 10 % can be estimated by: P o ( 10% ) = 1.25 x P o ( 1% ) (3)
Figure 6 shows the estimated output power as a function of the supply voltage for different load impedances.
30 PO (W) 20
4 6
001aac236
30 PO (W)
4 6
001aac237
8
20
8
RL = 3
10
RL = 3 10
10
10
0 10 15 20 25 30 VP (V) 35
0 10 15 20 25 30 VP (V) 35
a. THD = 1 %. Fig 6. Output power as a function of supply voltage
b. THD = 10 %.
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TDA8931
Power comparator 1 x 20 W
14.2 Output current limiting
The output current is limited by the OCP with a threshold level of 3.3 A (minimum). During normal operation the output current should not exceed this threshold level, otherwise the output signal is distorted. The peak output current should stay below 3.3 A and can be estimated using the following equation: VP I O ------------------------------------------------------------------------------ 3.3 2 x ( R DSon + R L + R coil + R ESR ) Where: IO = output current in the load in VP = supply voltage (VDDP - VSSP) RDSon = on-resistance power switch RL = load impedance Rcoil = series resistance output coil RESR = ESR of the single-ended capacitor Example: With a 4 load the OCP will be triggered below a supply voltage of 28 V. This will result in an absolute maximum output power of Po = 26 W at THD = 10 %. (4)
14.3 Low pass filter considerations
For a flat frequency response (second order Butterworth filter) it is necessary to change the LC-filter components (L1 and C14) according to the speaker impedance. Table 12 shows the required components values in case of a 4 W, 6 W or 8 W speaker impedance.
Table 12: Filter components values L1 value (H) 22 33 47 C14 value (nF) 680 470 330
Speaker impedance () 4 6 8
14.4 Thermal behavior (printed-circuit board considerations)
The SO20 package of the TDA8931T has special thermal corner leads, significantly increasing the power capability (reducing Rth). The corner leads (pins 1, 10, 11 and 20) should be attached to a copper area (VSS) on the PCB for cooling. The typical thermal resistance Rth(j-a) of the TDA8931T is 24 K/W (free air and natural convection) when soldered on a double sided FR4 PCB with 35 m copper layer and cooling area of approximately of 28 cm2.
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Philips Semiconductors
TDA8931
Power comparator 1 x 20 W
14.4.1 Thermal layout including vias
The bottom side of the double-sided PCB is used to place the SMD components including the TDA8931T and the majority of the signal tracks. The topside is used to place the leaded components. The remaining area on both top and bottom layer are filled with ground plane for a proper cooling. In this way it is possible to have a cooling area available of about:
* 40 % of the PCB area on the bottom (60 % for signal tracks and SMD components) * 90 % of the PCB area on the top (10 % for signal tracks)
The PCB area required for a typical mono amplifier is 21.5 cm2 resulting in a cooling area of about 28 cm2. Thermal vias should be placed close to corner leads for a proper heat flow to the top layer of the PCB. Figure 7 is showing the thermal vias indicated as black dots and Figure 8 is showing the heat flow to the copper area on the top layer.
20
1 top layer
bottom layer
TDA8931T
001aac239
11
10
001aac238
Fig 7. Thermal vias (top view)
Fig 8. Heat flow (cross section view)
14.4.2 Thermal considerations
To estimate the maximum junction temperature, the following equation can be used: T j ( max ) = T amb + R th ( j - a ) x P d Where: Tamb = ambient temperature Pd = power dissipation in the TDA8931T Rth(j-a) = thermal resistance from junction to ambient (24 K/W) (5)
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TDA8931
Power comparator 1 x 20 W
To estimate the power dissipation, the following equation can be used: 1 P d = P o x -- - 1 Where: Pd = power dissipation Po = RMS output power (W) = efficiency of total application (0.91 for RL = 8 and 0.89 for RL = 4 ) The derating curves of the dissipated power as a function of ambient temperature for several values of Rth(j-a) are illustrated in Figure 9. A maximum junction temperature Tj = 150 C is taken into account.
001aac303
(6)
8 Pd (W) 6 R th(j-a) (K/W) 20 25 30 35
40 4
2
0 25 50 75 Tamb (C) 100
Fig 9. Derating curves for power dissipation as a function of maximum ambient temperature
Example: TDA8931T mono amplifier, with substituting Po = 1 x 20 W, Rth(j-a) = 24 K/W, Pd = 2.47 W results in a junction temperature Tj(max) = 119 C. For this example the estimated maximum junction temperature at a high ambient temperature of 60 C for a mono amplifier driving 4 speaker impedance stays below the OTP threshold level of 150 C.
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Preliminary data sheet
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Philips Semiconductors
TDA8931
Power comparator 1 x 20 W
14.5 Measured performance figures of mono amplifier with TDA8931
Table 13: Characteristics VP = 22 V; RL = 4 , fi = 1 kHz; inverted input signal; Tamb = 25 C unless otherwise specified. Symbol Parameter VP Po operating supply voltage output power VP = 26 V; RL = 4 THD+N = 10 % THD+N = 1 % VP = 22 V; RL = 4 THD+N = 10 % THD+N = 1 % VP = 30 V; RL = 8 THD+N = 10 % THD+N = 1 % THD+N total harmonic distortion-plus-noise Po = 1 W; AES17 brick wall filter Vp = 22 V; RL = 4 Vp = 30 V; RL = 8 efficiency Po = 15 W Vp = 22 V; RL = 4 Vp = 30 V; RL = 8 Gv Vn(o) S/N B closed loop gain noise output voltage signal-to-noise ratio band width Vi = 100 mV (RMS); fi = 1 kHz inputs shorted; AES17 brick wall filter unwanted; with respect to Vo = 10 V (RMS) -3 dB low; LF cut-off point depends on value of SE capacitances -3 dB high SVRR supply voltage ripple Vp = 22 V; RL = 4 ; Vripple = 2 V (p-p); rejection fripple = 100 Hz with feed forward network (470 k and 15 nF) idle carrier frequency 89 91 20 128 98 40 % % dB V dB Hz 0.02 0.02 % % 16.0 12.0 W W 16.0 12.0 W W 22 20 W W Conditions
[1]
Min 12
Typ 22
Max 35
Unit V
45
45000 48
-
Hz dB
fc
[1]
-
290
-
kHz
Operates down to UVP threshold level and operates up to OVP threshold level.
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Preliminary data sheet
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Philips Semiconductors
TDA8931
Power comparator 1 x 20 W
14.6 Curves measured in typical application
102 THD + N (%) 10
001aab813
102 THD + N (%) 10
001aac013
1
1
10-1
f = 6 kHz 100 Hz
10-1
f = 6 kHz
100 Hz 10-2 1 kHz 10-2 1 kHz 10-3 10-2
10-3 10-2
10-1
1
10 Po (W)
102
10-1
1
10 Po (W)
102
a. VP = 22 V; RL = 4 .
b. VP = 30 V; RL = 8 .
Fig 10. Total harmonic distortion-plus-noise as a function of output power
1 THD + N (%) 10-1
001aac014
1 THD + N (%) 10-1
001aac015
1W 10-2 10-2
1W
10-3 10
102
103
104 fi (Hz)
105
10-3 10
102
103
104 fi (Hz)
105
a. VP = 22 V; RL = 4 ; Po = 1 W.
b. VP = 30 V; RL = 8 ; Po = 1 W.
Fig 11. Total harmonic distortion-plus-noise as a function of frequency
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Preliminary data sheet
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Philips Semiconductors
TDA8931
Power comparator 1 x 20 W
40 Po (W) 30
001aac016
22 G (dB) 18
001aab814
(1)
(2)
(1)
(2)
20
(3)
(4)
14
10
0 10 15 20 25 30 VP (V) 35
10 10
102
103
104 fi (Hz)
105
(1) RL = 4 ; THD = 10 %. (2) RL = 4 ; THD = 0.5 %. (3) RL = 8 ; THD = 10 %. (4) RL = 8 ; THD = 0.5 %. Conditions: fi = 1 kHz.
(1) RL = 8 . (2) RL = 4 . Conditions: VP = 22 V; Vi = 100 mV.
Fig 12. Output power as a function of supply voltage
Fig 13. Gain as a function of frequency
0 SVRR (dB) -20
001aac017
100 S/N (dB) 90
001aac018
80
(1)
-40
(3) (2) (4)
70
-60 10
102
103
104 fi (Hz)
105
60 10-2
10-1
1
10 Po (W)
102
(1) RL = 8 . (2) RL = 4 . (3) RL = 4 with feed forward network 470 k /15 nF. (4) RL = 8 with feed forward network 470 k /15 nF. Conditions: Vripple = 2 V (p-p).
Conditions: VP = 22 V; RL = 4 ; including AES 20 kHz filter.
Fig 14. SVRR as a function of frequency
Fig 15. Signal-to-noise ratio as a function of output power
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Preliminary data sheet
Rev. 01 -- 14 January 2004
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Philips Semiconductors
TDA8931
Power comparator 1 x 20 W
100 n (%) 80
(1) (2)
001aac019
2.5 Pd (W) 2.0
001aac020
60
1.5
40
1.0
(1) (2)
20
0.5
0 0 4 8 12 16 Po (W) 20
0 10-2
10-1
1
10 Po (W)
102
(1) VP = 30 V; RL = 8 . (2) VP = 22 V; RL = 4 . Conditions: fi = 1 kHz.
(1) VP = 30 V; RL = 8 . (2) VP = 22 V; RL = 4 . Conditions: fi = 1 kHz.
Fig 16. Efficiency as a function of total output power
Fig 17. Power dissipation as a function of total output power
15. Test information
Remark: Only valid if the TDA8931 is used as an audio amplifier.
15.1 Quality information
The General Quality Specification for Integrated Circuits, SNW-FQ-611 is applicable.
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Preliminary data sheet
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Philips Semiconductors
TDA8931
Power comparator 1 x 20 W
16. Package outline
SO20: plastic small outline package; 20 leads; body width 7.5 mm SOT163-1
D
E
A X
c y HE vMA
Z 20 11
Q A2 A1 pin 1 index Lp L 1 e bp 10 wM detail X (A 3) A
0
5 scale
10 mm
DIMENSIONS (inch dimensions are derived from the original mm dimensions) UNIT mm inches A max. 2.65 0.1 A1 0.3 0.1 A2 2.45 2.25 A3 0.25 0.01 bp 0.49 0.36 c 0.32 0.23 D (1) 13.0 12.6 0.51 0.49 E (1) 7.6 7.4 0.30 0.29 e 1.27 0.05 HE 10.65 10.00 L 1.4 Lp 1.1 0.4 Q 1.1 1.0 0.043 0.039 v 0.25 0.01 w 0.25 0.01 y 0.1 Z
(1)
0.9 0.4
0.012 0.096 0.004 0.089
0.019 0.013 0.014 0.009
0.419 0.043 0.055 0.394 0.016
0.035 0.004 0.016
8 o 0
o
Note 1. Plastic or metal protrusions of 0.15 mm (0.006 inch) maximum per side are not included. OUTLINE VERSION SOT163-1 REFERENCES IEC 075E04 JEDEC MS-013 JEITA EUROPEAN PROJECTION
ISSUE DATE 99-12-27 03-02-19
Fig 18. Package outline SOT163-1 (SO20)
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Preliminary data sheet
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Philips Semiconductors
TDA8931
Power comparator 1 x 20 W
17. Soldering
17.1 Introduction to soldering surface mount packages
This text gives a very brief insight to a complex technology. A more in-depth account of soldering ICs can be found in our Data Handbook IC26; Integrated Circuit Packages (document order number 9398 652 90011). There is no soldering method that is ideal for all surface mount IC packages. Wave soldering can still be used for certain surface mount ICs, but it is not suitable for fine pitch SMDs. In these situations reflow soldering is recommended.
17.2 Reflow soldering
Reflow soldering requires solder paste (a suspension of fine solder particles, flux and binding agent) to be applied to the printed-circuit board by screen printing, stencilling or pressure-syringe dispensing before package placement. Driven by legislation and environmental forces the worldwide use of lead-free solder pastes is increasing. Several methods exist for reflowing; for example, convection or convection/infrared heating in a conveyor type oven. Throughput times (preheating, soldering and cooling) vary between 100 seconds and 200 seconds depending on heating method. Typical reflow peak temperatures range from 215 C to 270 C depending on solder paste material. The top-surface temperature of the packages should preferably be kept:
* below 225 C (SnPb process) or below 245 C (Pb-free process)
- for all BGA, HTSSON..T and SSOP..T packages - for packages with a thickness 2.5 mm - for packages with a thickness < 2.5 mm and a volume 350 mm3 so called thick/large packages.
* below 240 C (SnPb process) or below 260 C (Pb-free process) for packages with a
thickness < 2.5 mm and a volume < 350 mm3 so called small/thin packages. Moisture sensitivity precautions, as indicated on packing, must be respected at all times.
17.3 Wave soldering
Conventional single wave soldering is not recommended for surface mount devices (SMDs) or printed-circuit boards with a high component density, as solder bridging and non-wetting can present major problems. To overcome these problems the double-wave soldering method was specifically developed. If wave soldering is used the following conditions must be observed for optimal results:
* Use a double-wave soldering method comprising a turbulent wave with high upward
pressure followed by a smooth laminar wave.
* For packages with leads on two sides and a pitch (e):
- larger than or equal to 1.27 mm, the footprint longitudinal axis is preferred to be parallel to the transport direction of the printed-circuit board;
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Preliminary data sheet
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Philips Semiconductors
TDA8931
Power comparator 1 x 20 W
- smaller than 1.27 mm, the footprint longitudinal axis must be parallel to the transport direction of the printed-circuit board. The footprint must incorporate solder thieves at the downstream end.
* For packages with leads on four sides, the footprint must be placed at a 45 angle to
the transport direction of the printed-circuit board. The footprint must incorporate solder thieves downstream and at the side corners. During placement and before soldering, the package must be fixed with a droplet of adhesive. The adhesive can be applied by screen printing, pin transfer or syringe dispensing. The package can be soldered after the adhesive is cured. Typical dwell time of the leads in the wave ranges from 3 seconds to 4 seconds at 250 C or 265 C, depending on solder material applied, SnPb or Pb-free respectively. A mildly-activated flux will eliminate the need for removal of corrosive residues in most applications.
17.4 Manual soldering
Fix the component by first soldering two diagonally-opposite end leads. Use a low voltage (24 V or less) soldering iron applied to the flat part of the lead. Contact time must be limited to 10 seconds at up to 300 C. When using a dedicated tool, all other leads can be soldered in one operation within 2 seconds to 5 seconds between 270 C and 320 C.
17.5 Package related soldering information
Table 14: Package [1] BGA, HTSSON..T [3], LBGA, LFBGA, SQFP, SSOP..T [3], TFBGA, VFBGA, XSON DHVQFN, HBCC, HBGA, HLQFP, HSO, HSOP, HSQFP, HSSON, HTQFP, HTSSOP, HVQFN, HVSON, SMS PLCC [5], SO, SOJ LQFP, QFP, TQFP SSOP, TSSOP, VSO, VSSOP CWQCCN..L [8], PMFP [9], WQCCN..L [8]
[1] [2]
Suitability of surface mount IC packages for wave and reflow soldering methods Soldering method Wave not suitable not suitable [4] Reflow [2] suitable suitable
suitable not not recommended [5] [6] recommended [7]
suitable suitable suitable not suitable
not suitable
For more detailed information on the BGA packages refer to the (LF)BGA Application Note (AN01026); order a copy from your Philips Semiconductors sales office. All surface mount (SMD) packages are moisture sensitive. Depending upon the moisture content, the maximum temperature (with respect to time) and body size of the package, there is a risk that internal or external package cracks may occur due to vaporization of the moisture in them (the so called popcorn effect). For details, refer to the Drypack information in the Data Handbook IC26; Integrated Circuit Packages; Section: Packing Methods. These transparent plastic packages are extremely sensitive to reflow soldering conditions and must on no account be processed through more than one soldering cycle or subjected to infrared reflow soldering with peak temperature exceeding 217 C 10 C measured in the atmosphere of the reflow oven. The package body peak temperature must be kept as low as possible.
[3]
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Preliminary data sheet
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Philips Semiconductors
TDA8931
Power comparator 1 x 20 W
[4]
These packages are not suitable for wave soldering. On versions with the heatsink on the bottom side, the solder cannot penetrate between the printed-circuit board and the heatsink. On versions with the heatsink on the top side, the solder might be deposited on the heatsink surface. If wave soldering is considered, then the package must be placed at a 45 angle to the solder wave direction. The package footprint must incorporate solder thieves downstream and at the side corners. Wave soldering is suitable for LQFP, QFP and TQFP packages with a pitch (e) larger than 0.8 mm; it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.65 mm. Wave soldering is suitable for SSOP, TSSOP, VSO and VSSOP packages with a pitch (e) equal to or larger than 0.65 mm; it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.5 mm. Image sensor packages in principle should not be soldered. They are mounted in sockets or delivered pre-mounted on flex foil. However, the image sensor package can be mounted by the client on a flex foil by using a hot bar soldering process. The appropriate soldering profile can be provided on request. Hot bar soldering or manual soldering is suitable for PMFP packages.
[5] [6] [7] [8]
[9]
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Preliminary data sheet
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TDA8931
Power comparator 1 x 20 W
18. Revision history
Table 15: Revision history Release date 20050114 Data sheet status Preliminary data sheet Change notice Doc. number 9397 750 13847 Supersedes Document ID TDA8931_1
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Preliminary data sheet
Rev. 01 -- 14 January 2004
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Philips Semiconductors
TDA8931
Power comparator 1 x 20 W
19. Data sheet status
Level I II Data sheet status [1] Objective data Preliminary data Product status [2] [3] Development Qualification Definition This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN).
III
Product data
Production
[1] [2] [3]
Please consult the most recently issued data sheet before initiating or completing a design. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
20. Definitions
Short-form specification -- The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition -- Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information -- Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification.
21. Disclaimers
Life support -- These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes -- Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status `Production'), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified.
22. Contact information
For additional information, please visit: http://www.semiconductors.philips.com For sales office addresses, send an email to: sales.addresses@www.semiconductors.philips.com
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