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MBRP3010N
MBRP3010N
Features
* Low forward voltage drop * High frequency properties and switching speed * Guard ring for over-voltage protection
Applications
* Switched mode power supply * Freewheeling diodes
1 23
TO-220
1. Anode 2.Cathode 3. Anode
SCHOTTKY BARRIER RECTIFIER
Absolute Maximum Ratings TC=25C unless otherwise noted
Symbol VRRM VR IF(AV) IFSM TJ, TSTG Parameter Maximum Repetitive Reverse Voltage Maximum DC Reverse Voltage Average Rectified Forward Current @ TC = 105C Non-repetitive Peak Surge Current (per diode) 60Hz Single Half-Sine Wave Operating Junction and Storage Temperature Value 100 100 30 250 -65 to +150 Units V V A A C
Thermal Characteristics
Symbol RJC Parameter Maximum Thermal Resistance, Junction to Case (per diode) Value 1.7 Units C/W
Electrical Characteristics (per diode)
Symbol VFM * Parameter Maximum Instantaneous Forward Voltage IF = 15A IF = 15A IF = 30A IF = 30A Maximum Instantaneous Reverse Current @ rated VR Value TC = 25 C TC = 125 C TC = 25 C TC = 125 C TC = 25 C TC = 125 C 0.85 0.67 1.05(TYP.) 0.80 mA 1 20 Units V
IRM *
* Pulse Test: Pulse Width=300s, Duty Cycle=2%
(c)2004 Fairchild Semiconductor Corporation
Rev. A, January 2004
MBRP3010N
Typical Characteristics
100
10
1
Forward Current, I F[A]
Reverse Current, IR[mA]
10
10
0
T J=125 C
o
1
10
-1
T J=75 C
o
TJ=125 C
0.1
o
TJ=75 C TJ=25 C
o
o
10
-2
T J=25 C
o
0.01 0.0
10
-3
0.5
1.0
1.5
20
40
60
80
100
Forward Voltage Drop, VF[V]
Reverse Voltage, VR[V]
Figure 1. Typical Forward Voltage Characteristics (per diode)
Figure 2. Typical Reverse Current vs. Reverse Voltage (per diode)
10
1000 900 800 700 600 500 400 300 200
TJ=25 C
o
Transient Thermal Impedance [ C/W]
Juntion Capacitance, C J[pF]
o
1
100 90 80 0 20 40 60 80 100
100
1m
10m
100m
1
10
Reverse Voltage, VR[V]
Pulse Duration [s]
Figure 3. Typical Junction Capacitance (per diode)
Figure 4. Thermal Impedance Characteristics (per diode)
35 30 25 20 15 10 5 0 0 20 40 60 80 100
o
300
DC
Max. Forward Surge Current, IFSM[A]
Average Forward Current, IF(AV)[A]
275
250
225
200
175
120
140
160
150 1 10 100
Case Temperature, T C [ C]
Number of Cycles @ 60Hz
Figure 5. Forward Current Derating Curve
Figure 6. Non-Repetive Surge Current (per diode)
(c)2004 Fairchild Semiconductor Corporation
Rev. A, January 2004
MBRP3010N
Package Dimensions
TO-220
9.90 0.20
1.30 0.10 2.80 0.10
4.50 0.20
(8.70) o3.60 0.10
(1.70)
1.30 -0.05
+0.10
9.20 0.20
(1.46)
13.08 0.20
(1.00)
(3.00)
15.90 0.20
1.27 0.10
1.52 0.10
0.80 0.10 2.54TYP [2.54 0.20] 2.54TYP [2.54 0.20]
10.08 0.30
18.95MAX.
(3.70)
(45 )
0.50 -0.05
+0.10
2.40 0.20
10.00 0.20
Dimensions in Millimeters
(c)2004 Fairchild Semiconductor Corporation Rev. A, January 2004
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM FACT Quiet seriesTM ActiveArrayTM FAST(R) FASTrTM BottomlessTM FRFETTM CoolFETTM CROSSVOLTTM GlobalOptoisolatorTM GTOTM DOMETM HiSeCTM EcoSPARKTM I2CTM E2CMOSTM EnSignaTM ImpliedDisconnectTM FACTTM ISOPLANARTM Across the board. Around the world.TM The Power FranchiseTM Programmable Active DroopTM DISCLAIMER
LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM
Power247TM PowerTrench(R) QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SILENT SWITCHER(R) SMART STARTTM SPMTM StealthTM SuperFETTM
SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogic(R) TINYOPTOTM TruTranslationTM UHCTM UltraFET(R) VCXTM
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems 2. A critical component is any component of a life support which, (a) are intended for surgical implant into the body, device or system whose failure to perform can be or (b) support or sustain life, or (c) whose failure to perform reasonably expected to cause the failure of the life support when properly used in accordance with instructions for use device or system, or to affect its safety or effectiveness. provided in the labeling, can be reasonably expected to result in significant injury to the user.
PRODUCT STATUS DEFINITIONS Definition of Terms
Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
(c)2004 Fairchild Semiconductor Corporation
Rev. I6

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