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| MITSUBISHI SEMICONDUCTOR M54564P/FP 8-UNIT 500mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY DESCRIPTION M54564P and M54564FP are eight-circuit output-sourcing Darlington transistor arrays. The circuits are made of PNP and NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low inputcurrent supply. PIN CONFIGURATION FEATURES High breakdown voltage (BVCEO 50V) High-current driving (Io(max) = -500mA) With output pulldown resistance (Driving available with fluorescent display tube) Driving available with PMOS IC output or with TTL output Wide operating temperature range (Ta = -20 to +75C) Output current-sourcing type INPUT IN1 1 IN2 2 IN3 3 IN4 4 IN5 5 IN6 6 IN7 7 IN8 8 VS 9 18 O1 17 O2 16 O3 15 O4 14 O5 13 O6 12 O7 11 O8 10 GND OUTPUT Package type 18P4G(P) NC 1 20 NC APPLICATION Drives of relays, printers, LEDs, fluorescent display tubes and lamps, and interfaces between MOS-bipolar logic systems and relays, solenoids, or small motors INPUT IN1 2 IN2 3 IN3 4 IN4 5 IN5 6 IN6 7 IN7 8 IN8 9 VS 10 19 O1 18 O2 17 O3 16 O4 15 O5 14 O6 13 O7 12 O8 11 GND OUTPUT FUNCTION The M54564P and M54564FP each have eight circuits, which are made of input inverters and current-sourcing outputs. The outputs are made of PNP transistors and NPN Darlington transistors. The PNP transistor base current is constant. Resistance of 50k is connected between each output pin and GND, making these ICs suitable for fluorescent display tubes. VS and GND are used commonly among the eight circuits. Output current is 500mA maximum. Supply voltage VS is 50V maximum. The M54564FP is enclosed in a molded small flat package, enabling space-saving design. Package type 20P2N-A(FP) NC : No connection CIRCUIT DIAGRAM VS 20K INPUT 8K 7.2K 1.5K 20K 50K GND The eight circuits share the VS and GND. 3K OUTPUT The diode, indicated with the dotted line, is parasitic, and cannot be used. Unit : Aug. 1999 MITSUBISHI SEMICONDUCTOR M54564P/FP 8-UNIT 500mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY ABSOLUTE MAXIMUM RATINGS Symbol VCEO VS VI IO Pd Topr Tstg Parameter Collector-emitter voltage Supply voltage Input voltage Output current Power dissipation Operating temperature Storage temperature Current per circuit output, H Ta = 25C, when mounted on board Output, L (Unless otherwise noted, Ta = -20 ~ +75C) Conditions Ratings -0.5 ~ +50 50 -0.5 ~ +30 -500 1.79(P)/1.10(FP) -20 ~ +75 -55 ~ +125 Unit V V V mA W C C RECOMMENDED OPERATING CONDITIONS Symbol VS Supply voltage Output current (Current per 1 circuit when 8 circuits are coming on simultaneously) "H" input voltage "L" input voltage Parameter (Unless otherwise noted, Ta = -20 ~ +75C) min 0 Limits typ -- -- -- -- -- max 50 -350 Unit V IO Duty Cycle P : no more than 8% FP : no more than 5% Duty Cycle P : no more than 55% FP : no more than 30% 0 0 2.4 0 mA -100 25 0.2 V V VIH VIL ELECTRICAL CHARACTERISTICS Symbol IS (leak) VCE (sat) II IS Parameter Supply leak current (Unless otherwise noted, Ta = -20 ~ +75C) Test conditions VS = 50V, VI = 0.2V VS = 10V, VI = 2.4V, IO = -350mA VS = 10V, VI = 2.4V, IO = -100mA VI = 5V, VS = 10V VI = 25V, VS = 30V VS = 50V, VI = 5V Limits min -- -- -- -- -- -- typ+ -- 1.6 1.45 0.4 2.9 -- max 100 2.4 2.0 0.7 6.5 5.0 Unit A V mA mA Collector-emitter saturation voltage Input current Supply current + : The typical values are those measured under ambient temperature (Ta) of 25C. There is no guarantee that these values are obtained under any conditions. SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25C) Symbol ton toff Parameter Turn-on time Turn-off time CL = 15pF (note 1) Test conditions min -- -- Limits typ 185 4300 max -- -- Unit ns ns Aug. 1999 MITSUBISHI SEMICONDUCTOR M54564P/FP 8-UNIT 500mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY NOTE 1 TEST CIRCUIT INPUT VS Measured device TIMING DIAGRAM 50% INPUT OUTPUT 50% PG 50 RL CL 50% OUTPUT ton toff 50% (1) Pulse generator (PG) characteristics : PRR = 1kHz, tw = 10s, tr = 6ns, tf = 6ns, ZO = 50 VI = 0 to 2.4V (2) Input-output conditions : RL = 30, VS = 10V (3) Electrostatic capacity CL includes floating capacitance at connections and input capacitance at probes TYPICAL CHARACTERISTICS Thermal Derating Factor Characteristics 2.0 M54564P Output Saturation Voltage Output Current Characteristics -500 VS = 10V VI = 2.4V Ta = 75C Ta = 25C Ta = -20C Power dissipation Pd (W) 1.5 M54564FP Output current IO (mA) 50 75 100 -400 -300 1.0 -200 0.5 -100 0 0 25 0 0 0.5 1.0 1.5 2.0 2.5 Ambient temperature Ta (C) Duty-Cycle-Output Current Characteristics (M54564P) -500 Output saturation voltage VCE (sat) (V) Duty-Cycle-Output Current Characteristics (M54564P) -500 Output current IO (mA) -300 -200 *The output current values represent the current per circuit. *Repeated frequency 10Hz *The value in the circle represents the value of the simultaneously-operated circuit. *Ta = 25C Output current IO (mA) -400 -400 -300 -200 -100 *The output current values represent the current per circuit. *Repeated frequency 10Hz *The value in the circle represents the value of the simultaneously-operated circuit. *Ta = 75C -100 80 100 0 0 20 40 60 80 100 0 0 20 40 60 Duty cycle (%) Duty cycle (%) Aug. 1999 MITSUBISHI SEMICONDUCTOR M54564P/FP 8-UNIT 500mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY Duty-Cycle-Output Current Characteristics (M54564FP) -500 Duty-Cycle-Output Current Characteristics (M54564FP) -500 Output current IO (mA) Output current IO (mA) -400 -400 -300 -200 *The output current values represent the current per circuit. *Repeated frequency 10Hz *The value in the circle represents the value of the simultaneously-operated circuit. *Ta = 25C -300 -100 80 100 -200 -100 *The output current values represent the current per circuit. *Repeated frequency 10Hz *The value in the circle represents the value of the simultaneously-operated circuit. 0 0 20 40 60 0 *Ta = 75C 0 20 40 60 80 100 Duty cycle (%) Duty cycle (%) Grounded Emitter Transfer Characteristics -500 VS = 20V VS-VO = 4V Ta = 75C Ta = 25C Ta = -20C Input Characteristics 5 VS = 20V Ta = 75C Ta = 25C Ta = -20C Output current IO (mA) -400 4 -300 Input current II (mA) 3 -200 2 -100 1 0 0 0.5 1.0 1.5 2.0 0 0 5 10 15 20 25 Input voltage VI (V) Input voltage VI (V) Aug. 1999 |
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