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| BC636, BC636-16, BC638, BC640, BC640-16 High Current Transistors PNP Silicon http://onsemi.com MAXIMUM RATINGS Rating Collector-Emitter Voltage BC636 BC638 BC640 Collector-Base Voltage BC636 BC638 BC640 Emitter-Base Voltage Collector Current -- Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range VEBO IC PD 625 5.0 PD 1.5 12 TJ, Tstg -55 to +150 Watts mW/C C mW mW/C 1 VCBO -45 -60 -80 -5.0 -0.5 Vdc Adc Symbol VCEO -45 -60 -80 Vdc Value Unit Vdc 3 BASE COLLECTOR 2 1 EMITTER 2 3 CASE 29 TO-92 STYLE 14 THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RJA RJC Max 200 83.3 Unit C/W ORDERING INFORMATION C/W Device BC636 BC636ZL1 BC636-16ZL1 BC638 BC638ZL1 BC640 BC640ZL1 BC640-16 Package TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 Shipping 5000 Units/Box 2000/Ammo Pack 2000/Ammo Pack 5000 Units/Box 2000/Ammo Pack 5000 Units/Box 2000/Ammo Pack 5000 Units/Box (c) Semiconductor Components Industries, LLC, 2001 1 June, 2000 - Rev. 1 Publication Order Number: BC636/D BC636, BC636-16, BC638, BC640, BC640-16 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (IC = -10 mAdc, IB = 0) V(BR)CEO BC636 BC638 BC640 V(BR)CBO BC636 BC638 BC640 V(BR)EBO ICBO -- -- -- -- -100 -10 nAdc Adc -45 -60 -80 -5.0 -- -- -- -- -- -- -- -- Vdc -45 -60 -80 -- -- -- -- -- -- Vdc Vdc Collector-Base Breakdown Voltage (IC = -100 Adc, IE = 0) Emitter-Base Breakdown Voltage (IE = -10 mAdc, IC = 0) Collector Cutoff Current (VCB = -30 Vdc, IE = 0) (VCB = -30 Vdc, IE = 0, TA = 125C) ON CHARACTERISTICS (1) DC Current Gain (IC = -5.0 mAdc, VCE = -2.0 Vdc) (IC = -150 mAdc, VCE = -2.0 Vdc) hFE BC636 BC636-16 BC638 BC640 BC640-16 VCE(sat) VBE(on) 25 40 100 40 40 100 25 -- -- -- -- -- -- -- -- -- -- -0.25 -0.5 -- -- 250 250 160 160 250 -- -0.5 -- -1.0 Vdc Vdc -- (IC = -500 mA, VCE = -2.0 V) Collector-Emitter Saturation Voltage (IC = -500 mAdc, IB = -50 mAdc) Base-Emitter On Voltage (IC = -500 mAdc, VCE = -2.0 Vdc) DYNAMIC CHARACTERISTICS Current-Gain -- Bandwidth Product (IC = -50 mAdc, VCE = -2.0 Vdc, f = 100 MHz) Output Capacitance (VCB = -10 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = -0.5 Vdc, IC = 0, f = 1.0 MHz) 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. fT Cob Cib -- -- -- 150 9.0 110 -- -- -- MHz pF pF http://onsemi.com 2 BC636, BC636-16, BC638, BC640, BC640-16 -1000 -500 IC, COLLECTOR CURRENT (mA) -200 -100 -50 -20 -10 -5 -2 -1 -1 PD TA 25C PD TC 25C BC636 BC638 BC640 PD TA 25C PD TC 25C SOA = 1S hFE, DC CURRENT GAIN 200 -A 100 -L 500 VCE = -2 V -B 50 -2 -3 -4 -5 -7 -10 -20 -30-40 -50 -70 -100 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 20 -1 -3 -5 -10 -30 -50 -100 IC, COLLECTOR CURRENT (mA) -300 -500 -1000 Figure 1. Active Region Safe Operating Area BANDWIDTH PRODUCT (MHz) Figure 2. DC Current Gain 500 300 V, VOLTAGE (VOLTS) -1 -0.8 -0.6 -0.4 -0.2 VCE(sat) @ IC/IB = 10 VBE(sat) @ IC/IB = 10 VBE(on) @ VCE = -2 V 100 VCE = -2 V f T, CURRENT-GAIN 50 20 -1 -10 -100 IC, COLLECTOR CURRENT (mA) -1000 0 -1 -100 -10 IC, COLLECTOR CURRENT (mA) -1000 Figure 3. Current Gain Bandwidth Product Figure 4. "Saturation" and "On" Voltages V, TEMPERATURE COEFFICIENTS (mV/C) -0.2 -1.0 VCE = -2 VOLTS T = 0C to +100C V for VBE -1.6 -2.2 -1 -3 -5 -10 -30 -50 -100 IC, COLLECTOR CURRENT (mA) -300 -500 -1000 Figure 5. Temperature Coefficients http://onsemi.com 3 BC636, BC636-16, BC638, BC640, BC640-16 PACKAGE DIMENSIONS TO-92 (TO-226) CASE 29-11 ISSUE AL A R P L SEATING PLANE B NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 --0.250 --0.080 0.105 --0.100 0.115 --0.135 --MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 --6.35 --2.04 2.66 --2.54 2.93 --3.43 --- K XX G H V 1 D J C SECTION X-X N N DIM A B C D G H J K L N P R V STYLE 14: PIN 1. EMITTER 2. COLLECTOR 3. BASE ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. PUBLICATION ORDERING INFORMATION Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: ONlit@hibbertco.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada JAPAN: ON Semiconductor, Japan Customer Focus Center 4-32-1 Nishi-Gotanda, Shinagawa-ku, Tokyo, Japan 141-0031 Phone: 81-3-5740-2700 Email: r14525@onsemi.com ON Semiconductor Website: http://onsemi.com For additional information, please contact your local Sales Representative. http://onsemi.com 4 BC636/D |
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