|
If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
Datasheet File OCR Text: |
SLD304XT 1000mW High Power Laser Diode Description The SLD304XT is a gain-guided, high-power laser diode with a built-in TE cooler. A new flat, square package with a low thermal resistance and an in-line pin configuration is employed. Fine tuning of the wavelength is possible by controlling the laser chip temperature. Features * High power Recommended power output Po = 900mW * Low operating current * Newly developed flat package with built-in TE cooler, thermistor, and photodiode Applications * Solid state laser excitation * Medical use Structure GaAlAs double-hetero-type laser diode Absolute Maximum Ratings (Tth = 25C) * Optical power output Po * Reverse voltage VR LD PD * Operating temperature Topr * Storage temperature Tstg * Operating current of TE cooler IT Pin Configuration (Top View) No. 1 2 3 4 5 6 7 8 Function TE cooler, negative Thermistor lead 1 Thermistor lead 2 Laser diode anode Laser diode cathode Photodiode cathode Photodiode anode TE cooler, positive 1 8 1 2 3 4 5 6 7 8 TH 1000 2 15 -10 to +30 -40 to +85 2.5 mW V V C C A Equivalent Circuit TE Cooler N P LD PD Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits. -1- E88066B81-PS SLD304XT Electrical and Optical Characteristics Item Threshold current Operating current Operating voltage Wavelength1 Monitor current Radiation angle (F. W. H. M.) Positional accuracy Differential efficiency Thermistor resistance Perpendicular Parallel Position Angle Symbol Ith Iop Vop p Imon // X, Y D Rth PO = 900mW PO = 900mW PO = 900mW PO = 900mW VR = 10V PO = 900mW Conditions (Tth: Thermistor temperature, Tth = 25C) Min. Typ. 550 1600 2.2 770 1.5 28 13 PO = 900mW PO = 900mW Tth = 25C 0.65 0.85 10 40 17 100 3 Max. 750 2000 3.0 840 Unit mA mA V nm mA degree degree m degree mW/mA k F. W. H. M. : Full Width at Half Maximum 1 Wavelength Selection Classification Type SLD304XT-1 SLD304XT-2 SLD304XT-3 Type SLD304XT-21 SLD304XT-24 SLD304XT-25 Wavelength (nm) 785 15 810 10 830 10 Wavelength (nm) 798 3 807 3 810 3 Handling Precautions Eye protection against laser beams The optical output of laser diodes ranges from several mW to 1W. However the optical power density of the laser beam at the diode chip reaches 1MW/cm2. Unlike gas lasers, since laser diode beams are divergent, uncollimated laser diode beams are fairly safe at a laser diode. For observing laser beams, ALWAYS use safety goggles that block infrared rays. Usage of IR scopes, IR cameras and fluorescent plates is also recommended for monitoring laser beams safely. Laser diode Lens Optical material Safety goggles for protection from laser beam IR fluorescent plate AP C ATC Optical boad Optical power output control device temperature control device -2- SLD304XT Example of Representative Characteristics Optical power output vs. Forward current characteristics 1000 Tth = 25C Tth = 0C Po - Optical power output [mW] Po - Optical power output [mW] Tth = -10C Tth = 15C 1000 Tth = 15C Tth = 0C Tth = -10C Tth = 30C Optical power output vs. Monitor current characteristics Tth = 30C Tth = 25C 500 500 0 0 0 0.5 Imon - Monitor current [mA] 1 0 500 1000 1500 2000 IF - Forward current [mA] Threshold current vs. Temperature characteristics 1000 Power dependence of far field pattern (parallel to junction) Tth = 25C Ith - Threshold current [mA] PO = 900mW 500 Radiation intensity (optional scale) PO = 800mW PO = 600mW PO = 400mW 100 -10 0 10 20 30 PO = 200mW Tth - Thermistor temperature [C] -30 -20 -10 0 10 20 30 Angle [degree] Power dependence of near field pattern Tth = 25C Radiation intensity (optional scale) PO = 900mW p - Oscillation wavelength [nm] PO = 800mW PO = 600mW PO = 400mW PO = 200mW Oscillation wavelength vs. Temperature characteristics 830 PO = 900mW 820 810 800 790 200m 780 -10 0 10 20 30 40 Tth - Thermistor temperature [C] -3- SLD304XT Differential efficiency vs. Temperature characteristics 400 Power dependence of polarization ratio Tth = 25C D - Differential efficiency [mW/mA] 1.0 300 Polarization ratio -10 0 10 20 30 40 200 0.5 100 0 0 200 400 600 800 1000 Tth - Thermistor temperature [C] Po - Optical power output [mW] -4- SLD304XT Power dependence of wavelength Tth = 25C Po = 200mW Relative radiant intensity Relative radiant intensity Tth = 25C Po = 400mW 800 805 Wavelength [nm] 810 800 805 Wavelength [nm] 810 Tth = 25C Po = 600mW Relative radiant intensity Relative radiant intensity Tth = 25C Po = 800mW 800 805 Wavelength [nm] 810 800 805 Wavelength [nm] 810 Tth = 25C Po = 900mW Relative radiant intensity 800 805 Wavelength [nm] 810 -5- SLD304XT Temperature dependence of wavelength (Po = 900mW) Tth = -5C Tth = 0C Relative radiant intensity 795 805 Wavelength [nm] 815 Relative radiant intensity 795 805 Wavelength [nm] 815 Tth = 5C Tth = 10C Relative radiant intensity 795 805 Wavelength [nm] 815 Relative radiant intensity 795 805 Wavelength [nm] 815 Tth = 15C Tth = 20C Relative radiant intensity 795 805 Wavelength [nm] 815 Relative radiant intensity 795 805 Wavelength [nm] 815 -6- SLD304XT Tth = 25C Tth = 30C Relative radiant intensity 795 805 Wavelength [nm] 815 Relative radiant intensity 795 805 Wavelength [nm] 815 TE cooler characteristics TE cooler characteristics 1 10 Tc = 33C 10 Tc = 25C TE cooler characteristics 2 IT = 2.5A T vs V VT - Pin voltage [V] Q - Absorbed heat [W] Q - Absorbed heat [W] T vs V IT = 2.5A 5 2.0A 5 1.5A 3 1.0A 2 0.5A 2.0A 1 0 0 4 5 1.5A 5 1.0A 4 3 2 T 0.5A vs Q 5A 2.0A 0. 0 5A 1. 0A 50 1. 2. 1 0 5A 100 0 0 50 100 T - Temperature difference [C] T : Tc - Tth Tth: Thermistor temperature Tc : Case temperature T - Temperature difference [C] Termistor characteristics 50 Rth - Thermistor resistance [k] 10 5 1 -10 0 10 20 30 40 50 60 70 Tth - Thermistor temperature [C] -7- VT - Pin voltage [V] 2.0A T vs Q 1. 0A 0. 5A 1. 5A 2. 5A SLD304XT Package Outline Unit: mm M-247 (LO-10) + 0.02 4 - 3.0 0 33.0 0.03 15.0 0.03 14.0 5.0 Window Glass 7.5 0.1 8 - 0.6 2.54 38.0 0.5 LD Chip 19.0 28.0 0.5 + 2.0 8.0 - 1.0 Reference Plane 16.5 0.1 Distance between pilot hole and emitting area SONY CODE EIAJ CODE JEDEC CODE 28.0 0.5 4.3g M-247 PACKAGE WEIGHT -8- 3.0 7.5 0.2 11.35 0.1 0.6 MAX 10.4 |
Price & Availability of SLD304XT |
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |