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| HERMETIC SILICON PHOTODARLINGTON L14F1 PACKAGE DIMENSIONS 0.230 (5.84) 0.209 (5.31) 0.195 (4.95) 0.178 (4.52) L14F2 0.030 (0.76) NOM 0.255 (6.47) 0.225 (5.71) 0.500 (12.7) MIN 0.100 (2.54) 0.050 (1.27) 2 1 0.038 (0.97) 0.046 (1.16) 0.036 (0.92) 45 O0.020 (0.51) 3X 3 SCHEMATIC (CONNECTED TO CASE) COLLECTOR 3 BASE 2 NOTES: 1. Dimensions for all drawings are in inches (mm). 2. Tolerance of .010 (.25) on all non-nominal dimensions unless otherwise specified. 1 EMITTER DESCRIPTION The L14F1/L14F2 are silicon photodarlingtons mounted in a narrow angle, TO-18 package. FEATURES * Hermetically sealed package * Narrow reception angle 2001 Fairchild Semiconductor Corporation DS300306 6/01/01 1 OF 4 www.fairchildsemi.com HERMETIC SILICON PHOTODARLINGTON L14F1 ABSOLUTE MAXIMUM RATINGS Parameter Operating Temperature Storage Temperature Soldering Temperature (Iron)(3,4,5 and 6) Soldering Temperature (Flow)(3,4 and 6) Collector to Emitter Breakdown Voltage Collector to Base Breakdown Voltage Emitter to Base Breakdwon Voltage Power Dissipation (TA = 25C)(1) Power Dissipation (TC = 25C)(2) (TA = 25C unless otherwise specified) Symbol TOPR TSTG TSOL-I TSOL-F VCEO VCBO VEBO PD PD Rating -65 to +125 -65 to +150 240 for 5 sec 260 for 10 sec 25 25 12 300 600 Unit C C C C V V V mW mW L14F2 NOTE: 1. Derate power dissipation linearly 3.00 mW/C above 25C ambient. 2. Derate power dissipation linearly 6.00 mW/C above 25C case. 3. RMA flux is recommended. 4. Methanol or isopropyl alcohols are recommended as cleaning agents. 5. Soldering iron tip 1/16" (1.6mm) minimum from housing. 6. As long as leads are not under any stress or spring tension. 7. Light source is a GaAs LED emitting light at a peak wavelength of 940 nm. 8. Figure 1 and figure 2 use light source of tungsten lamp at 2870K color temperature. A GaAs source of 0.05 mW/cm2 is approximately equivalent to a tungsten source, at 2870K, of 0.2 mW/cm2. ELECTRICAL / OPTICAL CHARACTERISTICS PARAMETER (TA =25C) (All measurements made under pulse conditions) SYMBOL MIN TYP MAX UNITS TEST CONDITIONS Collector-Emitter Breakdown Emitter-Base Breakdown Collector-Base Breakdown Collector-Emitter Leakage Reception Angle at 1/2 Sensitivity On-State Collector Current L14F1 On-State Collector Current L14F2 Rise Time Fall Time IC = 10 mA, Ee = 0 IE = 100 A, Ee = 0 IC = 100 A, Ee = 0 VCE = 12 V, Ee = 0 Ee = .125 mW/cm2, VCE = 5 V(7) Ee = .125 mW/cm2, VCE = 5 V(7) IC = 10 mA, VCC = 5 V, RL =100 IC = 10 mA, VCC = 5 V, RL =100 BVCEO BVEBO BVCBO ICEO IC(ON) IC(ON) tr tf 25 12 25 -- 8 7.5 2.5 300 250 -- -- -- 100 -- V V V nA Degrees mA mA s s www.fairchildsemi.com 2 OF 4 6/01/01 DS300306 HERMETIC SILICON PHOTODARLINGTON L14F1 Figure 1. Light Current vs. Collector to Emitter Voltage 100 IL, NORMALIZED LIGHT CURRENT IL / IL @25C, RELATIVE LIGHT CURRENT 5.0 mW/cm2 2.0 10 1.0 .5 .2 1.0 .1 .05 10 8 6 4 2 1.0 .8 .6 .4 .2 .1 .08 .06 .04 .02 .01 -50 -25 0 25 50 75 100 125 VCE = 5 V H = .2 mW/cm2 L14F2 Figure 2. Relative Light Current vs. Ambient Temperature 0.1 0 5 10 15 20 25 NORMALIZED TO: VCE = 5 V Ee = .2 mW/cm2 30 35 VCE , COLLECTOR TO EMITTER VOLTAGE (V) T, TEMPERATURE (C) Figure 3. Spectral Response 1.0 0.9 RELATIVE SPECTRAL RESPONSE 0.8 RELATIVE AMPLITUDE 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 400 500 600 700 800 900 1000 1100 1200 110 100 90 80 70 60 50 40 30 20 10 0 -90 -70 Figure 4. Angular Response -50 -30 -10 10 30 50 70 90 , WAVE LENGTH (NANOMETERS) DEGREES Figure 6. Light Current vs. Relative Switching Speed 100 VCC L14F INPUT LED56 LED td tf tr INPUT PULSE tOFF = ts + tf tON = td + tr ts 1.0 V 90% LOAD RESISTANCE 10 NORMALIZED TO: RL = 100 IL = 10 mA IL, LIGHT CURRENT (mA) OUTPUT PULSE 10% 10 100 I RL OUTPUT 1.0 1000 VCC = 10 V 0.1 0.01 0.1 1.0 RELATIVE SWITCHING SPEED td + tr + ts + tf 10 100 Figure 5. Test Circuit and Voltage Waveforms DS300306 6/01/01 3 OF 4 www.fairchildsemi.com HERMETIC SILICON PHOTODARLINGTON L14F1 L14F2 DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body,or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. DS300306 6/01/01 4 OF 4 www.fairchildsemi.com |
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