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| October 2002 FDS6990A Dual N-Channel Logic Level PowerTrench (R) MOSFET General Description Features These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. 7.5 A, 30 V. R DS(ON) = 0.018 W R DS(ON) = 0.023 W Fast switching speed. @ @ VGS = 10 V VGS = 4.5 V Low gate charge (typical 18nC). High performance trench technology for extremely low R DS(ON). High power and current handling capability. SOT-23 SuperSOTTM-6 SuperSOTTM-8 SO-8 SOT-223 SOIC-16 D1 D1 D2 D2 5 6 7 8 4 3 2 1 S FD 0A 9 69 G1 S2 G2 SO-8 pin 1 S1 Absolute Maximum Ratings Symbol VDSS VGSS ID TA = 25 C unless otherwise noted o Parameter Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed (Note 1a) Ratings 30 20 7.5 20 (Note 1a) (Note 1b) (Note 1c) Units V V A PD Power Dissipation for Single Operation 2 1.6 0.9 -55 to 150 W TJ ,TSTG Operating and Storage Temperature Range C THERMAL CHARACTERISTICS R JA R J C Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 78 40 C/W C/W (c)2002 Fairchild Semiconductor Corporation FDS6990A Rev.C2 Electrical Characteristics (TA = 25C unless otherwise noted) Symbol Parameter Test Conditions VGS = 0 V, ID = 250 A Min 30 Typ Max Units V OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage BVDSS Breakdown Voltage Temperature Coefficient TJ ID = 250 A, Referenced to 25C 20 mV/C IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 1 A TJ = 55C 10 uA IGSSF Gate-Body Leakage, Forward VGS = 20 V, VDS = 0 V 100 nA IGSSR Gate-Body Leakage, Reverse VGS = - 20 V, VDS = 0 V -100 nA ON CHARACTERISTICS (Note 2) VGS(th) Gate Threshold Voltage VGS(th) Gate Threshold Voltage TJ Temperature Coefficient RDS(on) Static Drain-Source On-Resistance VDS = VGS, ID = 250 A ID = 250 A, Referenced to 25C 1 1.5 3 V -4 mV/C VGS = 10 V, ID(on) On-State Drain Current VGS = 4.5 V, VGS = 10 V, ID = 7.5 A TJ=125C ID = 6.5 A VDS = 5 V 0.015 0.022 0.018 0.018 0.031 0.023 20 A gFS Forward Transconductance VDS = 15 V, ID = 7.5 A 24 S DYNAMIC CHARACTERISTICS Ciss Input Capacitance Coss Output Capacitance VDS = 15 V, f = 1.0 MHz VGS = 0 V, 1650 pF 365 pF Crss Reverse Transfer Capacitance 170 pF RG Gate Resistance (Note 2) VGS = 15mV, f = 1.0 MHz 1.2 SWITCHING CHARACTERISTICS td(on) Turn-On Delay Time tr Turn-On Rise Time VDD = 15 V, VGS = 10 V, ID = 1 A, RGEN = 6 11 20 ns 9 18 ns td(off) Turn-Off Delay Time 25 40 ns tf Turn-Off Fall Time 11 20 ns Qg Total Gate Charge Qgs Gate-Source Charge VDS = 15 V, VGS = 5 V ID = 7.5 A, 18 25 nC 5.5 nC Qgd Gate-Drain Charge 6.7 nC DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS IS Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward VGS = 0 V, IS = 1.3 A VSD (Note 2) Voltage 1.3 A 1.2 V Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design. a) 50 C/W when 2 mounted on a 1in pad of 2 oz copper b) 105 C/W when 2 mounted on a .04 in pad of 2 oz copper c) 125 C/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0% FDS6990A Rev. C2 Typical Electrical Characteristics 40 I D , DRAIN-SOURCE CURRENT (A) 3 30 RDS(ON) , NORMALIZED 6.0V 4.5V 3.5V DRAIN-SOURCE ON-RESISTANCE VGS =10V 4.0V 2.5 2 20 3.0V V GS = 3.0V 3.5 V 4.5 V 6.0 V 10V 1.5 10 2.5V 0 0 0.5 V DS 1 0.5 1 1.5 2 2.5 3 0 10 20 I D , DRAIN CURRENT (A) 30 40 , DRAIN-SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 1.6 R DS(ON), ON-RESISTANCE (OHM) DRAIN-SOURCE ON-RESISTANCE 0.1 1.4 I D = 7.5A V GS = 10V I D = 3.8A 0.08 RDS(ON) , NORMALIZED 1.2 0.06 1 0.04 125C 0.02 0.8 25C 0 0 2 4 6 8 10 0.6 -50 -25 0 25 50 75 100 125 150 TJ , JUNCTION TEMPERATURE (C) V GS , GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 40 30 V DS =5.0V I D , DRAIN CURRENT (A) 30 I S , REVERSE DRAIN CURRENT (A) TJ = -55C 25C 125C 10 VGS = 0V TJ= 125C 1 25C 0.1 20 -55C 10 0.01 0 1 2 3 4 5 VGS , GATE TO SOURCE VOLTAGE (V) 0.001 0 0.2 0.4 0.6 0.8 1 1.2 1.4 V SD , BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDS6990A Rev.C2 Typical Electrical Characteristics 10 VGS , GATE-SOURCE VOLTAGE (V) 4000 ID = 7.5A 8 CAPACITANCE (pF) VD S = 5V 10V 15V 2000 1000 500 Ciss 6 Coss 200 100 50 0.1 4 Crss f = 1 MHz V GS = 0 V 0.2 0.5 1 2 5 10 30 2 0 0 8 Q 16 24 32 40 g , GATE CHARGE (nC) V DS , DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. 80 30 I D, DRAIN CURRENT (A) 10 RD S(O LIM N) IT Figure 8. Capacitance Characteristics. 30 2 0.5 0.05 VGS =10V SINGLE PULSE RJA = 135C/W A TA = 25C 0.5 1 2 10 0m s 1s 10 s DC POWER (W) 100 us 1m s 10m s 25 20 15 10 5 0 0.01 SINGLE PULSE R JA =135 C/W TA = 25C 0.01 0.1 5 10 30 50 0.1 0.5 10 50 100 300 VDS , DRAIN-SOURCE VOLTAGE (V) SINGLE PULSE TIME (SEC) Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. 1 r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 0.5 0.2 0.1 0.05 0.02 0.01 0.005 0.002 0.001 0.0001 0.001 0.01 0.1 t1 , TIME (sec) 1 10 D = 0.5 0.2 0.1 0.05 P(pk) 0.02 0.01 Single Pulse R JA (t) = r(t) * R JA R JA =135 C/W t1 t2 TJ - TA = P * RJA (t) Duty Cycle, D = t1 /t 2 100 300 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. FDS6990A Rev.C2 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx FACT ActiveArray FACT Quiet Series Bottomless FASTa CoolFET FASTr CROSSVOLT FRFET DOME GlobalOptoisolator EcoSPARK GTO E2CMOSTM HiSeC EnSignaTM I2C Across the board. Around the world. The Power Franchise Programmable Active Droop DISCLAIMER ImpliedDisconnect PACMAN POP ISOPLANAR Power247 LittleFET PowerTrencha MicroFET QFET MicroPak QS MICROWIRE QT Optoelectronics MSX Quiet Series MSXPro RapidConfigure OCX RapidConnect OCXPro SILENT SWITCHERa OPTOLOGICa SMART START OPTOPLANAR SPM Stealth SuperSOT-3 SuperSOT-6 SuperSOT-8 SyncFET TinyLogic TruTranslation UHC UltraFETa VCX FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production Rev. I1 |
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