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| MITSUBISHI SEMICONDUCTOR TRIAC BCR12CM Refer to the page 6 as to the product guaranteed maximum junction temperature 150C MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE BCR12CM OUTLINE DRAWING 10.5 MAX Dimensions in mm 4.5 4 16 MAX 3.20.2 1.3 12.5 MIN 3.8 MAX TYPE NAME VOLTAGE CLASS 1.0 0.8 2.5 2.5 7.0 3.60.2 0.5 2.6 123 24 1 2 33 4 Measurement point of case temperature * IT (RMS) ...................................................................... 12A * VDRM ....................................................................... 600V * IFGT !, IRGT !, IRGT # ............................................ 20mA 1 T1 TERMINAL T2 TERMINAL GATE TERMINAL T2 TERMINAL TO-220 APPLICATION Contactless AC switches, light drimmer, electric flasher unit, control of household equipment such as TV sets * stereo * refrigerator * washing machine * infrared kotatsu * carpet * electric fan, solenoid drivers, small motor control, copying machine, electric tool, other general purpose control applications MAXIMUM RATINGS Symbol VDRM VDSM Parameter Repetitive peak off-state voltage 1 Non-repetitive peak off-state voltage 1 Voltage class 12 600 720 Unit V V 4.5 Symbol IT (RMS) ITSM I2t PGM PG (AV) VGM IGM Tj Tstg -- Parameter RMS on-state current Surge on-state current I2t for fusing Peak gate power dissipation Average gate power dissipation Peak gate voltage Peak gate current Junction temperature Storage temperature Weight Typical value Conditions Commercial frequency, sine full wave 360 conduction, Tc=98C3 60Hz sinewave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current Ratings 12 120 60 5 0.5 10 2 -40 ~ +125 -40 ~ +125 2.0 Unit A A A2s W W V A C C g 1. Gate open. Mar. 2002 MITSUBISHI SEMICONDUCTOR TRIAC BCR12CM Refer to the page 6 as to the product guaranteed maximum junction temperature 150C MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE ELECTRICAL CHARACTERISTICS Limits Symbol IDRM VTM VFGT ! VRGT ! VRGT # IFGT ! IRGT ! IRGT # VGD Rth (j-c) (dv/dt)c Gate non-trigger voltage Thermal resistance Critical-rate of rise of off-state commutating voltage 5 Parameter Repetitive peak off-state current On-state voltage ! Gate trigger voltage 2 @ # ! Gate trigger current 2 @ # Tj=125C, VD=1/2VDRM Junction to case 3 4 Tj=125C Test conditions Tj=125C, VDRM applied Tc=25C, ITM=20A, Instantaneous measurement Min. -- -- -- Typ. -- -- -- -- -- -- -- -- -- -- -- Max. 2.0 1.6 1.5 1.5 1.5 20 20 20 -- 1.8 -- Unit mA V V V V mA mA mA V C/ W V/s Tj=25C, VD=6V, RL=6, RG=330 -- -- -- Tj=25C, VD=6V, RL=6, RG=330 -- -- 0.2 -- 10 2. Measurement using the gate trigger characteristics measurement circuit. 3. Case temperature is measured at the T2 terminal 1.5mm away from the molded case. 4. The contact thermal resistance Rth (c-f) in case of greasing is 1.0C/W. 5. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below. Test conditions Commutating voltage and current waveforms (inductive load) 1. Junction temperature Tj=125C 2. Rate of decay of on-state commutating current (di/dt)c=-6.0A/ms 3. Peak off-state voltage VD=400V SUPPLY VOLTAGE MAIN CURRENT MAIN VOLTAGE (dv/dt)c (di/dt)c TIME TIME TIME VD PERFORMANCE CURVES MAXIMUM ON-STATE CHARACTERISTICS 102 ON-STATE CURRENT (A) SURGE ON-STATE CURRENT (A) RATED SURGE ON-STATE CURRENT 200 180 160 140 120 100 80 60 40 20 0 100 2 3 4 5 7 101 2 3 4 5 7 102 7 5 3 2 Tj = 125C 101 7 5 3 2 100 7 5 3 2 Tj = 25C 10-1 0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8 ON-STATE VOLTAGE (V) CONDUCTION TIME (CYCLES AT 60Hz) Mar. 2002 MITSUBISHI SEMICONDUCTOR TRIAC BCR12CM Refer to the page 6 as to the product guaranteed maximum junction temperature 150C MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE GATE CHARACTERISTICS (, AND ) GATE TRIGGER CURRENT VS. JUNCTION TEMPERATURE 100 (%) GATE VOLTAGE (V) GATE TRIGGER CURRENT (Tj = tC) GATE TRIGGER CURRENT (Tj = 25C) 102 7 5 3 2 VGM = 10V 101 7 5 3 2 100 7 5 3 2 PGM = 5W PG(AV) = 0.5W VGT = 1.5V IGM = 2A 103 7 5 4 3 2 102 7 5 4 3 2 TYPICAL EXAMPLE IRGT I, IRGT III IFGT I VGD = 0.2V IRGT I IFGT I, IRGT III 10-1 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 GATE CURRENT (mA) 101 -60 -40 -20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (C) MAXIMUM TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (JUNCTION TO CASE) 102 2 3 5 7 103 2 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 10-1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 CONDUCTION TIME (CYCLES AT 60Hz) GATE TRIGGER VOLTAGE VS. JUNCTION TEMPERATURE 100 (%) GATE TRIGGER VOLTAGE (Tj = tC) GATE TRIGGER VOLTAGE (Tj = 25C) 103 7 5 4 3 2 102 7 5 4 3 2 TYPICAL EXAMPLE 101 -60 -40 -20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (C) TRANSIENT THERMAL IMPEDANCE (C/W) MAXIMUM ON-STATE POWER DISSIPATION ALLOWABLE CASE TEMPERATURE VS. RMS ON-STATE CURRENT 160 CURVES APPLY REGARDLESS OF CONDUCTION ANGLE ON-STATE POWER DISSIPATION (W) 32 24 360 CONDUCTION 20 RESISTIVE, INDUCTIVE 16 LOADS 12 8 4 0 0 2 4 6 8 10 12 14 16 CASE TEMPERATURE (C) 28 140 120 100 80 60 360 40 CONDUCTION RESISTIVE, 20 INDUCTIVE LOADS 0 0 2 4 6 8 10 12 14 16 RMS ON-STATE CURRENT (A) RMS ON-STATE CURRENT (A) Mar. 2002 MITSUBISHI SEMICONDUCTOR TRIAC BCR12CM Refer to the page 6 as to the product guaranteed maximum junction temperature 150C MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE AMBIENT TEMPERATURE (C) AMBIENT TEMPERATURE (C) ALLOWABLE AMBIENT TEMPERATURE VS. RMS ON-STATE CURRENT 160 ALL FINS ARE BLACK PAINTED ALUMINUM AND GREASED 140 CURVES APPLY REGARDLESS OF CONDUCTION ANGLE 120 120 120 t2.3 100 100 100 t2.3 80 60 60 t2.3 60 RESISTIVE, 40 INDUCTIVE LOADS 20 NATURAL CONVECTION 0 0 2 4 6 ALLOWABLE AMBIENT TEMPERATURE VS. RMS ON-STATE CURRENT 160 NATURAL CONVECTION NO FINS 140 CURVES APPLY REGARDLESS OF CONDUCTION ANGLE 120 RESISTIVE, INDUCTIVE LOADS 100 80 60 40 20 0 0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 RMS ON-STATE CURRENT (A) 8 10 12 14 16 RMS ON-STATE CURRENT (A) 100 (%) REPETITIVE PEAK OFF-STATE CURRENT VS. JUNCTION TEMPERATURE 105 7 TYPICAL EXAMPLE 5 3 2 104 7 5 3 2 103 7 5 3 2 102 -60 -40 -20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (C) 103 7 5 4 3 2 102 7 5 4 3 2 100 (%) HOLDING CURRENT VS. JUNCTION TEMPERATURE TYPICAL EXAMPLE REPETITIVE PEAK OFF-STATE CURRENT (Tj = tC) REPETITIVE PEAK OFF-STATE CURRENT (Tj = 25C) HOLDING CURRENT (Tj = tC) HOLDING CURRENT (Tj = 25C) 101 -60 -40 -20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (C) LACHING CURRENT VS. JUNCTION TEMPERATURE 103 7 5 3 2 102 7 5 3 2 101 7 5 3 2 100 -40 100 (%) BREAKOVER VOLTAGE VS. JUNCTION TEMPERATURE 160 TYPICAL EXAMPLE 140 120 100 80 60 40 20 0 -60 -40 -20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (C) LACHING CURRENT (mA) DISTRIBUTION T2 , G TYPICAL - T2 , G- EXAMPLE + + 0 40 80 120 160 JUNCTION TEMPERATURE (C) BREAKOVER VOLTAGE (Tj = tC) BREAKOVER VOLTAGE (Tj = 25C) + T2 , G- TYPICAL EXAMPLE Mar. 2002 MITSUBISHI SEMICONDUCTOR TRIAC BCR12CM Refer to the page 6 as to the product guaranteed maximum junction temperature 150C MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE 100 (%) 160 140 TYPICAL EXAMPLE Tj = 125C BREAKOVER VOLTAGE (dv/dt = xV/s ) BREAKOVER VOLTAGE (dv/dt = 1V/s ) 120 100 80 60 40 I QUADRANT 20 0 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 RATE OF RISE OF OFF-STATE VOLTAGE (V/s) III QUADRANT CRITICAL RATE OF RISE OF OFF-STATE COMMUTATING VOLTAGE (V/s) BREAKOVER VOLTAGE VS. RATE OF RISE OF OFF-STATE VOLTAGE COMMUTATION CHARACTERISTICS 7 SUPPLY TYPICAL TIME 5 VOLTAGE EXAMPLE (di/dt)c MAIN CURRENT TIME 3 Tj = 125C MAIN TIME VOLTAGE 2 IT = 4A VD (dv/dt)c = 500s VD = 200V 101 f = 3Hz 7 I QUADRANT 5 MINIMUM 3 CHARAC2 TERISTICS VALUE 100 7 100 III QUADRANT 23 5 7 101 23 5 7 102 RATE OF DECAY OF ON-STATE COMMUTATING CURRENT (A /ms) GATE TRIGGER CURRENT VS. GATE CURRENT PULSE WIDTH 103 7 5 4 3 2 102 7 5 4 3 2 101 100 2 3 4 5 7 101 2 3 4 5 7 102 GATE TRIGGER CHARACTERISTICS TEST CIRCUITS 6 6 100 (%) TYPICAL EXAMPLE IFGT I IRGT I IRGT III 6V V A RG 6V V A RG GATE TRIGGER CURRENT (tw) GATE TRIGGER CURRENT (DC) TEST PROCEDURE 1 6 TEST PROCEDURE 2 6V V A RG GATE CURRENT PULSE WIDTH (s) TEST PROCEDURE 3 Mar. 2002 MITSUBISHI SEMICONDUCTOR TRIAC BCR12CM The product guaranteed maximum junction temperature 150C (See warning.) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE BCR12CM OUTLINE DRAWING 10.5 MAX Dimensions in mm 4.5 4 16 MAX 3.20.2 1.3 12.5 MIN 3.8 MAX TYPE NAME VOLTAGE CLASS 1.0 0.8 2.5 2.5 7.0 3.60.2 0.5 2.6 123 24 1 2 33 4 Measurement point of case temperature * IT (RMS) ...................................................................... 12A * VDRM ....................................................................... 600V * IFGT !, IRGT !, IRGT # ............................................ 20mA 1 T1 TERMINAL T2 TERMINAL GATE TERMINAL T2 TERMINAL TO-220 APPLICATION Contactless AC switches, light drimmer, electric flasher unit, control of household equipment such as TV sets * stereo * refrigerator * washing machine * infrared kotatsu * carpet * electric fan, solenoid drivers, small motor control, copying machine, electric tool, other general purpose control applications (Warning) 1. Refer to the recommended circuit values around the triac before using. 2. Be sure to exchange the specification before using. If not exchanged, general triacs will be supplied. MAXIMUM RATINGS Symbol VDRM VDSM Parameter Repetitive peak off-state voltage 1 Non-repetitive peak off-state voltage 1 Voltage class 12 600 720 Unit V V 4.5 Symbol IT (RMS) ITSM I2t PGM PG (AV) VGM IGM Tj Tstg -- Parameter RMS on-state current Surge on-state current I2t for fusing Peak gate power dissipation Average gate power dissipation Peak gate voltage Peak gate current Junction temperature Storage temperature Weight Typical value Conditions Commercial frequency, sine full wave 360 conduction, Tc=123C3 60Hz sinewave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current Ratings 12 120 60 5 0.5 10 2 -40 ~ +150 -40 ~ +150 2.0 Unit A A A2s W W V A C C g 1. Gate open. Mar. 2002 MITSUBISHI SEMICONDUCTOR TRIAC BCR12CM The product guaranteed maximum junction temperature 150C (See warning.) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE ELECTRICAL CHARACTERISTICS Limits Symbol IDRM VTM VFGT ! VRGT ! VRGT # IFGT ! IRGT ! IRGT # VGD Rth (j-c) (dv/dt)c Gate non-trigger voltage Thermal resistance Critical-rate of rise of off-state commutating voltage 5 Parameter Repetitive peak off-state current On-state voltage ! Gate trigger voltage 2 @ # ! Gate trigger current 2 @ # Test conditions Tj=150C, VDRM applied Tc=25C, ITM=20A, Instantaneous measurement Min. -- -- -- Typ. -- -- -- -- -- -- -- -- -- -- -- Max. 2.0 1.6 1.5 1.5 1.5 20 20 20 -- 1.8 -- Unit mA V V V V mA mA mA V C/ W V/s Tj=25C, VD=6V, RL=6, RG=330 -- -- -- Tj=25C, VD=6V, RL=6, RG=330 -- -- Tj=125C/150C, VD=1/2VDRM Junction to case 3 4 Tj=125C/150C 0.2/0.1 -- 10/1 2. Measurement using the gate trigger characteristics measurement circuit. 3. Case temperature is measured at the T2 terminal 1.5mm away from the molded case. 4. The contact thermal resistance Rth (c-f) in case of greasing is 1.0C/W. 5. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below. Test conditions Commutating voltage and current waveforms (inductive load) 1. Junction temperature Tj=125C/150C 2. Rate of decay of on-state commutating current (di/dt)c=-6.0A/ms 3. Peak off-state voltage VD=400V SUPPLY VOLTAGE MAIN CURRENT MAIN VOLTAGE (dv/dt)c (di/dt)c TIME TIME TIME VD PERFORMANCE CURVES MAXIMUM ON-STATE CHARACTERISTICS 102 ON-STATE CURRENT (A) RATED SURGE ON-STATE CURRENT 200 SURGE ON-STATE CURRENT (A) 7 5 3 2 101 7 5 3 2 Tj = 25C 100 7 5 0.5 Tj = 150C 180 160 140 120 100 80 60 40 20 0 100 2 3 4 5 7 101 2 3 4 5 7 102 1.0 1.5 2 2.5 3.0 3.5 4.0 ON-STATE VOLTAGE (V) CONDUCTION TIME (CYCLES AT 60Hz) Mar. 2002 MITSUBISHI SEMICONDUCTOR TRIAC BCR12CM The product guaranteed maximum junction temperature 150C (See warning.) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE GATE CHARACTERISTICS (, AND ) 100 (%) GATE TRIGGER CURRENT VS. JUNCTION TEMPERATURE 103 7 5 4 3 2 102 7 5 4 3 2 TYPICAL EXAMPLE 5 3 2 VGM = 10V GATE VOLTAGE (V) GATE TRIGGER CURRENT (Tj = tC) GATE TRIGGER CURRENT (Tj = 25C) 101 7 5 3 2 100 7 5 3 2 10-1 PGM = 5W PG(AV) = 0.5W VGT = 1.5V IGM = 2A IRGT I, IRGT III IFGT I IRGT I IFGT I, IRGT III VGD = 0.1V 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 GATE CURRENT (mA) 101 -60 -40 -20 0 20 40 60 80 100 120 140 160 JUNCTION TEMPERATURE (C) MAXIMUM TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (JUNCTION TO CASE) 102 2 3 5 7 103 2 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 10-1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 CONDUCTION TIME (CYCLES AT 60Hz) GATE TRIGGER VOLTAGE VS. JUNCTION TEMPERATURE 100 (%) GATE TRIGGER VOLTAGE (Tj = tC) GATE TRIGGER VOLTAGE (Tj = 25C) 103 7 5 4 3 2 102 7 5 4 3 2 TYPICAL EXAMPLE 101 -60 -40 -20 0 20 40 60 80 100 120 140 160 JUNCTION TEMPERATURE (C) TRANSIENT THERMAL IMPEDANCE (C/W) MAXIMUM ON-STATE POWER DISSIPATION ON-STATE POWER DISSIPATION (W) ALLOWABLE CASE TEMPERATURE VS. RMS ON-STATE CURRENT 160 CASE TEMPERATURE (C) 32 28 24 360 CONDUCTION 20 RESISTIVE, INDUCTIVE 16 LOADS 12 8 4 0 0 2 4 6 8 10 12 14 16 140 CURVES APPLY 120 REGARDLESS OF CONDUCTION ANGLE 100 80 60 360 40 CONDUCTION RESISTIVE, 20 INDUCTIVE LOADS 0 0 2 4 6 8 10 12 14 16 RMS ON-STATE CURRENT (A) RMS ON-STATE CURRENT (A) Mar. 2002 MITSUBISHI SEMICONDUCTOR TRIAC BCR12CM The product guaranteed maximum junction temperature 150C (See warning.) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE ALLOWABLE AMBIENT TEMPERATURE VS. RMS ON-STATE CURRENT 160 ALL FINS ARE BLACK PAINTED ALUMINUM AND GREASED 140 CURVES APPLY REGARDLESS OF 120 CONDUCTION ANGLE 100 120 120 t2.3 100 100 t2.3 80 60 60 t2.3 60 RESISTIVE, 40 INDUCTIVE LOADS 20 NATURAL CONVECTION 0 0 2 8 10 12 14 16 4 6 RMS ON-STATE CURRENT (A) AMBIENT TEMPERATURE (C) AMBIENT TEMPERATURE (C) ALLOWABLE AMBIENT TEMPERATURE VS. RMS ON-STATE CURRENT 160 NATURAL CONVECTION NO FINS, CURVES 140 APPLY REGARDLESS OF CONDUCTION ANGLE 120 RESISTIVE, INDUCTIVE LOADS 100 80 60 40 20 0 0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 RMS ON-STATE CURRENT (A) 100 (%) REPETITIVE PEAK OFF-STATE CURRENT VS. JUNCTION TEMPERATURE 105 7 TYPICAL EXAMPLE 5 3 2 104 7 5 3 2 103 7 5 3 2 102 -60 -40 -20 0 20 40 60 80 100 120 140 160 JUNCTION TEMPERATURE (C) 103 7 5 4 3 2 102 7 5 4 3 2 HOLDING CURRENT VS. JUNCTION TEMPERATURE 100 (%) REPETITIVE PEAK OFF-STATE CURRENT (Tj = tC) REPETITIVE PEAK OFF-STATE CURRENT (Tj = 25C) TYPICAL EXAMPLE HOLDING CURRENT (Tj = tC) HOLDING CURRENT (Tj = 25C) 101 -60 -40 -20 0 20 40 60 80 100 120 140 160 JUNCTION TEMPERATURE (C) LACHING CURRENT VS. JUNCTION TEMPERATURE 103 7 5 3 2 102 7 5 3 2 101 7 5 3 2 100 -40 BREAKOVER VOLTAGE VS. JUNCTION TEMPERATURE 100 (%) 160 TYPICAL EXAMPLE 140 120 100 80 60 40 20 0 -60 -40 -20 0 20 40 60 80 100 120 140 160 JUNCTION TEMPERATURE (C) LACHING CURRENT (mA) DISTRIBUTION T2 , G TYPICAL - T2 , G- EXAMPLE + + 0 40 80 120 160 JUNCTION TEMPERATURE (C) BREAKOVER VOLTAGE (Tj = tC) BREAKOVER VOLTAGE (Tj = 25C) + T2 , G- TYPICAL EXAMPLE Mar. 2002 MITSUBISHI SEMICONDUCTOR TRIAC BCR12CM The product guaranteed maximum junction temperature 150C (See warning.) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE 100 (%) 160 140 100 (%) BREAKOVER VOLTAGE VS. RATE OF RISE OF OFF-STATE VOLTAGE (Tj = 125C) TYPICAL EXAMPLE Tj = 125C BREAKOVER VOLTAGE VS. RATE OF RISE OF OFF-STATE VOLTAGE (Tj = 150C) 160 140 TYPICAL EXAMPLE Tj = 150C BREAKOVER VOLTAGE (dv/dt = xV/s ) BREAKOVER VOLTAGE (dv/dt = 1V/s ) 120 100 80 60 40 I QUADRANT 20 0 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 RATE OF RISE OF OFF-STATE VOLTAGE (V/s) III QUADRANT BREAKOVER VOLTAGE (dv/dt = xV/s ) BREAKOVER VOLTAGE (dv/dt = 1V/s ) 120 100 80 60 40 20 I QUADRANT III QUADRANT 0 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 RATE OF RISE OF OFF-STATE VOLTAGE (V/s) COMMUTATION CHARACTERISTICS (Tj = 125C) CRITICAL RATE OF RISE OF OFF-STATE COMMUTATING VOLTAGE (V/s) COMMUTATION CHARACTERISTICS (Tj = 150C) CRITICAL RATE OF RISE OF OFF-STATE COMMUTATING VOLTAGE (V/s) 102 TYPICAL 7 EXAMPLE 5 Tj = 125C 3 IT = 4A 2 = 500s VD = 200V 101 f = 3Hz 7 5 3 2 100 7 100 SUPPLY VOLTAGE MAIN CURRENT MAIN VOLTAGE (dv/dt)c TIME (di/dt)c TIME TIME VD 102 TYPICAL 7 EXAMPLE 5 Tj = 150C 3 IT = 4A 2 = 500s VD = 200V 101 f = 3Hz 7 5 SUPPLY VOLTAGE MAIN CURRENT MAIN VOLTAGE (dv/dt)c TIME (di/dt)c TIME TIME VD MINIMUM CHARACTERISTICS VALUE I QUADRANT III QUADRANT 23 5 7 101 23 5 7 102 III QUADRANT 3 MINIMUM I QUADRANT 2 CHARACTERISTICS 100 VALUE 7 100 23 5 7 101 23 5 7 102 RATE OF DECAY OF ON-STATE COMMUTATING CURRENT (A/ms) RATE OF DECAY OF ON-STATE COMMUTATING CURRENT (A/ms) GATE TRIGGER CURRENT VS. GATE CURRENT PULSE WIDTH 103 7 5 4 3 2 102 7 5 4 3 2 101 0 10 2 3 4 5 7 101 2 3 4 5 7 102 100 (%) TYPICAL EXAMPLE IFGT I IRGT I IRGT III GATE TRIGGER CURRENT (tw) GATE TRIGGER CURRENT (DC) GATE CURRENT PULSE WIDTH (s) Mar. 2002 MITSUBISHI SEMICONDUCTOR TRIAC BCR12CM The product guaranteed maximum junction temperature 150C (See warning.) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE GATE TRIGGER CHARACTERISTICS TEST CIRCUITS 6 6 RECOMMENDED CIRCUIT VALUES AROUND THE TRIAC LOAD 6V V A RG 6V V A RG C1 R1 C1 = 0.1~0.47F R1 = 47~100 C0 R0 C0 = 0.1F R0 = 100 TEST PROCEDURE 1 6 TEST PROCEDURE 2 6V V A RG TEST PROCEDURE 3 Mar. 2002 |
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