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Agilent ATF-54143 Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package
Data Sheet
Features * High linearity performance * Enhancement Mode Technology [1] * Low noise figure * Excellent uniformity in product specifications Description Agilent Technologies's ATF-54143 is a high dynamic range, low noise, E-PHEMT housed in a 4-lead SC-70 (SOT-343) surface mount plastic package. The combination of high gain, high linearity and low noise makes the ATF-54143 ideal for cellular/PCS base stations, MMDS, and other systems in the 450 MHz to 6 GHz frequency range. Surface Mount Package SOT-343 * 800 micron gate width * Low cost surface mount small plastic package SOT-343 (4 lead SC-70) * Tape-and-Reel packaging option available Specifications 2 GHz; 3 V, 60 mA (Typ.) * 36.2 dBm output 3rd order intercept
1
Pin Connections and Package Marking
3 GATE 4 SOURCE
SOURCE 2 DRAIN
* 20.4 dBm output power at 1 dB gain compression * 0.5 dB noise figure * 16.6 dB associated gain Applications * Low noise amplifier for cellular/ PCS base stations * LNA for WLAN, WLL/RLL and MMDS applications * General purpose discrete E-PHEMT for other ultra low noise applications
Note: 1. Enhancement mode technology requires positive Vgs, thereby eliminating the need for the negative gate voltage associated with conventional depletion mode devices.
Note: Top View. Package marking provides orientation and identification "4F" = Device Code "x" = Date code character identifies month of manufacture.
4Fx
ATF-54143 Absolute Maximum Ratings [1] Symbol
VDS VGS VGD IDS Pdiss Pin max. TCH TSTG jc
Parameter
Drain - Source Voltage [2] Gate - Source Voltage [2] Gate Drain Voltage [2] Drain Current [2] Total Power Dissipation [3] RF Input Power Channel Temperature Storage Temperature Thermal Resistance [4]
Units
V V V mA mW dBm C C C/W
Absolute Maximum
5 -5 to 1 5 120 360 10 150 -65 to 150 162
Notes: 1. Operation of this device in excess of any one of these parameters may cause permanent damage. 2. Assumes DC quiescent conditions. 3. Source lead temperature is 25C. Derate 6 mW/C for TL > 40C. 4. Thermal resistance measured using 150C Liquid Crystal Measurement method.
120 100
0.7V
0.6V
80
IDS (mA)
60
0.5V
40 20 0
0.4V 0.3V
0
1
2
3 4 VDS (V)
5
6
7
Figure 1. Typical I-V Curves. (VGS = 0.1 V per step)
Product Consistency Distribution Charts
160 Cpk = 0.77 Stdev = 1.41
200 Cpk = 1.35 Stdev = 0.4 160
160 Cpk = 1.67 Stdev = 0.073 120
120
120
80
80
80
40
40
40
0 30 32 34 36 OIP3 (dBm) 38 40 42
0 14 15 16 17 GAIN (dB) 18 19
0 0.25
0.45
0.65 NF (dB)
0.85
1.05
Figure 2. OIP3 @ 2 GHz, 3 V, 60 mA. LSL = 33.0, Nominal = 36.575
Figure 3. Gain @ 2 GHz, 3 V, 60 mA. USL = 18.5, LSL = 15, Nominal = 16.6
Figure 4. NF @ 2 GHz, 3 V, 60 mA. USL = 0.9, Nominal = 0.49
ATF-54143 Electrical Specifications TA = 25C, RF parameters measured in a test circuit for a typical device Symbol
Vgs Vth Idss Gm Igss NF Ga OIP3 P1dB
Parameter and Test Condition
Operational Gate Voltage Threshold Voltage Saturated Drain Current Transconductance Gate Leakage Current Noise Figure [1] Associated Gain [1] Output 3rd Order Intercept Point [1] 1dB Compressed Output Power [1] f = 2 GHz f = 900 MHz f = 2 GHz f = 900 MHz f = 2 GHz f = 900 MHz f = 2 GHz f = 900 MHz Vds = 3V, Ids = 60 mA Vds = 3V, Ids = 4 mA Vds = 3V, Vgs = 0V Vds = 3V, gm = Idss/Vgs; Vgs = 0.75 - 0.7 = 0.05V Vgd = Vgs = -3V Vds = 3V, Ids = 60 mA Vds = 3V, Ids = 60 mA Vds = 3V, Ids = 60 mA Vds = 3V, Ids = 60 mA Vds = 3V, Ids = 60 mA Vds = 3V, Ids = 60 mA Vds = 3V, Ids = 60 mA Vds = 3V, Ids = 60 mA
Units
V V A mmho A dB dB dB dB dBm dBm dBm dBm
Min.
0.4 0.18 -- 230 -- -- -- 15 -- 33 -- -- --
Typ.
0.59 0.38 1 410 -- 0.5 0.3 16.6 23.4 36.2 35.5 20.4 18.4
Max.
0.75 0.52 5 560 200 0.9 -- 18.5 -- -- -- -- --
Notes: 1. Measurements obtained using production test board described in Figure 5.
Input
50 Ohm Transmission Line Including Gate Bias T (0.3 dB loss)
Input Matching Circuit _mag = 0.30 _ang = 150 (0.3 dB loss)
DUT
Output Matching Circuit _mag = 0.035 _ang = -71 (0.4 dB loss)
50 Ohm Transmission Line Including Drain Bias T (0.3 dB loss)
Output
Figure 5. Block diagram of 2 GHz production test board used for Noise Figure, Associated Gain, P1dB, and OIP3 measurements. This circuit represents a trade-off between an optimal noise match and associated impedance matching circuit losses. Circuit losses have been de-embedded from actual measurements.
ATF-54143 Typical Performance Curves
35 30 25
GAIN (dB)
3V 60 mA
1.6 1.4 1.2
OIP3 (dBm) Fmin (dB)
40 35 30 25 20 15
3V 60 mA
1.0 0.8 0.6
20 15 10 5 0 0 1 2 3 4 5 6 FREQUENCY (GHz)
0.4 0.2 0 0 1 2 3 4
10 5
3V 60 mA
5
6
0
1
2
3
4
5
6
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 6. Gain vs. Frequency and Bias Tuned for Max OIP3 and Fmin.
Figure 7. Fmin vs. Frequency and Bias Tuned for Max OIP3 and Fmin.
Figure 8. OIP3 vs. Frequency and Bias Tuned for Max OIP3 and Fmin.
ATF-54143 Typical Performance Curves, continued
22 20 18 19 18 17 16 15 14
3V 60 mA
42 37 32 27 22
3V 4V
P1dB (dBm)
16 14 12 10 8 0 1 2 3 4 5 6 FREQUENCY (GHz)
OIP3 (dBm)
GAIN (dB)
13 12 0 20 40 Id (mA) 60 80
17 12 100 0 20 40 Id (mA) 60 80
3V 4V
100
Figure 9. P1dB vs. Frequency and Bias Tuned for Max OIP3 and Fmin at 2 GHz.
24 22 20
Figure 10. Gain vs. Ids and Vds Tuned for Max OIP3 and Fmin at 2 GHz.
25 24
Figure 11. OIP3 vs. Ids and Vds Tuned for Max OIP3 and Fmin at 2 GHz.
40
35 23
P1dB (dBm)
OIP3 (dBm)
GAIN (dB)
22 21 20
30
18 16 14 12 0 20 40 Id (mA) 60 80 100
3V 4V
25
3V 4V
19 18 0 20 40 Id (mA) 60 80
3V 4V
20
15 100 0 20 40 Id (mA) 60 80 100
Figure 12. P1dB vs. Ids and Vds Tuned for Max OIP3 and Fmin at 2 GHz.
23 22 21
Figure 13. Gain vs. Ids and Vds Tuned for Max OIP3 and Fmin at 900 MHz.
35 30 25
25C -40C 85C
Figure 14. OIP3 vs. Ids and Vds Tuned for Max OIP3 and Fmin at 900 MHz.
2
25C -40C 85C
1.5
P1dB (dBm)
GAIN (dB)
19 18 17 16 15 0 20 40 Idq 60 (mA)[1] 80 100
3V 4V
20 15
Fmin (dB)
0 1 2 3 4 5 6
20
1.0
0.5 10 5 FREQUENCY (GHz) 0 0 1 2 3 4 5 6 FREQUENCY (GHz)
Figure 15. P1dB vs. Ids and Vds Tuned for Max OIP3 and Fmin at 900 MHz.
Figure 16. Gain vs. Frequency and Temp Tuned for Max OIP3 and Fmin at 3V, 60 mA.
Figure 17. Fmin vs. Frequency and Temp Tuned for Max OIP3 and Fmin at 3V, 60 mA.
Note: 1. Idq represents the quiescent drain current without RF drive applied. Under low values of Idq, the application of RF drive will cause Id to increase substantially as P1dB is approached.
ATF-54143 Typical Performance Curves, continued
45 40 35
P1dB (dBm) OIP3 (dBm)
21
GAIN (dB), OIP3 & P1dB (dBm)
40
2.0
20.5 20 19.5 19 18.5 18 17.5 17 0 1 2 3 4 5 6 0 1 2 3 4 5 6 FREQUENCY (GHz) FREQUENCY (GHz)
25C -40C 85C
30
1.5
Fmin (dB) Fmin (dB)
30 25 20 15 10
25C -40C 85C
20
1.0
10
0 0 20 40 Id (mA) 60 80
OIP3 P1dB Gain NF
0.5
0
100
Figure 18. OIP3 vs. Frequency and Temp Tuned for Max OIP3 and Fmin at 3V, 60 mA.
40
GAIN (dB), OIP3 & P1dB (dBm)
Figure 19. P1dB vs. Frequency and Temp Tuned for Max OIP3 and Fmin at 3V, 60 mA.
40
GAIN (dB), OIP3 & P1dB (dBm)
Figure 20. OIP3, P1dB, Gain and Fmin vs. Ids at 3V @ 2 GHz.
40
GAIN (dB), OIP3 & P1dB (dBm)
2.0
1
1
30
1.5
Fmin (dB)
30
0.8
30
0.8
0.6 20 0.4 10
Fmin (dB)
0.6 20 0.4 10
20
1.0
10
0 0 20 40 Id (mA) 60 80
OIP3 P1dB Gain NF
0.5
0
0 0 20 40 Id (mA) 60 80
OIP3 P1dB Gain NF
0.2
0
0 0 20 40 Id (mA) 60 80
OIP3 P1dB Gain NF
0.2
0
100
100
100
Figure 21. OIP3, P1dB, Gain and Fmin vs. Ids at 4V @ 2 GHz.
1.4 1.2 1.0
Figure 22. OIP3, P1dB, Gain and Fmin vs. Ids at 3V @ 900 MHz.
Figure 23. OIP3, P1dB, Gain and Fmin vs. Ids at 4V @ 900 MHz.
ATF-54143 Reflection Coefficient Parameters tuned for Maximum Output IP3, VDS = 3V, IDS = 60 mA Freq (GHz)
0.9 2.0
60 mA 40 mA 80 mA
Fmin (dB)
0.8 0.6 0.4 0.2 0 0 1 2 3 4 5 6 7 FREQUENCY (GHz)
Out_Mag.[1] (Mag)
0.017 0.026 0.013 0.025
Out_Ang.[1] (Degrees)
115 -85 173 102
OIP3 (dBm)
35.54 36.23 37.54 35.75
P1dB (dBm)
18.4 20.38 20.28 18.09
3.9 5.8
Note: 1. Gamma out is the reflection coefficient of the matching circuit presented to the output of the device.
Figure 24. Fmin[1] vs. Frequency and Ids at 3V. Note: 1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements a true Fmin is calculated. Refer to the noise parameter application section for more information.
ATF-54143 Typical Scattering Parameters, VDS = 3 V, IDS = 40 mA Freq. GHz
0.1 0.5 0.9 1.0 1.5 1.9 2.0 2.5 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0
S11 Mag.
0.99 0.83 0.72 0.70 0.65 0.63 0.62 0.61 0.61 0.63 0.66 0.69 0.71 0.72 0.76 0.83 0.85 0.88 0.89 0.87 0.88 0.87 0.87 0.92
Ang.
-17.6 -76.9 -114 -120.6 -146.5 -162.1 -165.6 178.5 164.2 138.4 116.5 97.9 80.8 62.6 45.2 28.2 13.9 -0.5 -15.1 -31.6 -46.1 -54.8 -62.8 -73.6
dB
27.99 25.47 22.52 21.86 19.09 17.38 17.00 15.33 13.91 11.59 9.65 8.01 6.64 5.38 4.20 2.84 1.42 0.23 -0.86 -2.18 -3.85 -5.61 -7.09 -8.34
S21 Mag.
25.09 18.77 13.37 12.39 9.01 7.40 7.08 5.84 4.96 3.80 3.04 2.51 2.15 1.86 1.62 1.39 1.18 1.03 0.91 0.78 0.64 0.52 0.44 0.38
S12 Ang.
168.5 130.1 108 103.9 87.4 76.6 74.2 62.6 51.5 31 11.6 -6.7 -24.5 -42.5 -60.8 -79.8 -96.9 -112.4 -129.7 -148 -164.8 -178.4 170.1 156.1
S22 Ang.
80.2 52.4 40.4 38.7 33.3 30.4 29.8 26.6 22.9 14 4.2 -6.1 -17.6 -29.3 -40.6 -56.1 -69.3 -81.6 -95.7 -110.3 -124 -134.6 -144.1 -157.4
MSG/MAG Ang.
-12.8 -54.6 -78.7 -83.2 -99.5 -108.6 -110.9 -122.6 -137.5 176.5 138.4 117.6 98.6 73.4 52.8 38.3 25.8 12.7 -4.1 -20.1 -34.9 -45.6 -55.9 -68.7 34.45 27.17 24.54 24.03 21.99 20.70 20.37 19.09 17.92 16.06 14.57 13.28 12.25 11.42 10.48 9.66 8.98 8.35 7.84 7.36 6.87 6.37 5.81 5.46
Mag.
0.009 0.036 0.047 0.049 0.057 0.063 0.065 0.072 0.080 0.094 0.106 0.118 0.128 0.134 0.145 0.150 0.149 0.150 0.149 0.143 0.132 0.121 0.116 0.109
Mag.
0.59 0.44 0.33 0.31 0.24 0.20 0.19 0.15 0.12 0.10 0.14 0.17 0.20 0.22 0.27 0.37 0.45 0.51 0.54 0.61 0.65 0.70 0.73 0.76
Typical Noise Parameters, VDS = 3 V, IDS = 40 mA Freq GHz
0.5 0.9 1.0 1.9 2.0 2.4 3.0 3.9 5.0 5.8 6.0 7.0 8.0 9.0 10.0
Fmin dB
0.17 0.22 0.24 0.42 0.45 0.51 0.59 0.69 0.90 1.14 1.17 1.24 1.57 1.64 1.8
opt Mag.
0.34 0.32 0.32 0.29 0.29 0.30 0.32 0.34 0.45 0.50 0.52 0.58 0.60 0.69 0.80
opt Ang.
34.80 53.00 60.50 108.10 111.10 136.00 169.90 -151.60 -119.50 -101.60 -99.60 -79.50 -57.90 -39.70 -22.20
Rn/50
0.04 0.04 0.04 0.04 0.04 0.04 0.05 0.05 0.09 0.16 0.18 0.33 0.56 0.87 1.34
Ga dB
MSG/MAG and S21 (dB)
40 35 30 25 20 15 10 5 0 -5 10 -15 0 5 10 FREQUENCY (GHz) 15 20
S21 MSG
27.83 23.57 22.93 18.35 17.91 16.39 15.40 13.26 11.89 10.95 10.64 9.61 8.36 7.77 7.68
Figure 25. MSG/MAG and |S21|2 vs. Frequency at 3V, 40 mA.
Notes: 1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements a true Fmin is calculated. Refer to the noise parameter application section for more information. 2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate lead. The output reference plane is at the end of the drain lead. The parameters include the effect of four plated through via holes connecting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the carrier. Two 0.020 inch diameter via holes are placed within 0.010 inch from each source lead contact point, one via on each side of that point.
ATF-54143 Typical Scattering Parameters, VDS = 3V, IDS = 60 mA Freq. GHz
0.1 0.5 0.9 1.0 1.5 1.9 2.0 2.5 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0
S11 Mag.
0.99 0.81 0.71 0.69 0.64 0.62 0.62 0.60 0.60 0.62 0.66 0.69 0.70 0.72 0.76 0.83 0.85 0.88 0.89 0.88 0.88 0.88 0.88 0.92
Ang.
-18.9 -80.8 -117.9 -124.4 -149.8 -164.9 -168.3 176.2 162.3 137.1 115.5 97.2 80.2 62.2 45.0 28.4 13.9 -0.2 -14.6 -30.6 -45.0 -54.5 -62.5 -73.4
dB
28.84 26.04 22.93 22.24 19.40 17.66 17.28 15.58 14.15 11.81 9.87 8.22 6.85 5.58 4.40 3.06 1.60 0.43 -0.65 -1.98 -3.62 -5.37 -6.83 -8.01
S21 Mag.
27.66 20.05 14.01 12.94 9.34 7.64 7.31 6.01 5.10 3.90 3.11 2.58 2.20 1.90 1.66 1.42 1.20 1.05 0.93 0.80 0.66 0.54 0.46 0.40
S12 Ang.
167.6 128.0 106.2 102.2 86.1 75.6 73.3 61.8 51.0 30.8 11.7 -6.4 -24.0 -41.8 -59.9 -78.7 -95.8 -111.1 -128.0 -146.1 -162.7 -176.6 171.9 157.9
S22 Ang.
80.0 52.4 41.8 40.4 36.1 33.8 33.3 30.1 26.5 17.1 6.8 -3.9 -15.8 -28.0 -39.6 -55.1 -68.6 -80.9 -94.9 -109.3 -122.9 -133.7 -143.2 -156.3
MSG/MAG Ang.
-14.0 -58.8 -83.8 -88.5 -105.2 -114.7 -117.0 -129.7 -146.5 165.2 131.5 112.4 94.3 70.1 50.6 36.8 24.4 11.3 -5.2 -20.8 -35.0 -45.8 -56.1 -68.4 34.88 27.84 25.13 24.59 22.46 21.05 20.71 19.34 18.15 16.17 14.64 13.36 12.29 11.45 10.53 9.71 9.04 8.43 7.94 7.43 6.98 6.49 5.95 5.66
Mag.
0.01 0.03 0.04 0.05 0.05 0.06 0.06 0.07 0.08 0.09 0.11 0.12 0.13 0.14 0.15 0.15 0.15 0.15 0.15 0.14 0.13 0.12 0.12 0.11
Mag.
0.54 0.40 0.29 0.27 0.21 0.17 0.17 0.13 0.11 0.10 0.14 0.18 0.20 0.23 0.29 0.38 0.46 0.51 0.55 0.61 0.66 0.70 0.73 0.76
Typical Noise Parameters, VDS = 3V, IDS = 60 mA Freq GHz
0.5 0.9 1.0 1.9 2.0 2.4 3.0 3.9 5.0 5.8 6.0 7.0 8.0 9.0 10.0
Fmin dB
0.15 0.20 0.22 0.42 0.45 0.52 0.59 0.70 0.93 1.16 1.19 1.26 1.63 1.69 1.73
opt Mag.
0.34 0.32 0.32 0.27 0.27 0.26 0.29 0.36 0.47 0.52 0.55 0.60 0.62 0.70 0.79
opt Ang.
42.3 62.8 67.6 116.3 120.1 145.8 178.0 -145.4 -116.0 -98.9 -96.5 -77.1 -56.1 -38.5 -21.5
Rn/50
0.04 0.04 0.04 0.04 0.04 0.04 0.05 0.05 0.10 0.18 0.20 0.37 0.62 0.95 1.45
Ga dB
MSG/MAG and S21 (dB)
40 35 30 25 20 15 10 5 0 -5 10 -15 0 5 10 FREQUENCY (GHz) 15 20
S21 MSG
28.50 24.18 23.47 18.67 18.29 16.65 15.56 13.53 12.13 11.10 10.95 9.73 8.56 7.97 7.76
Figure 26. MSG/MAG and |S21|2 vs. Frequency at 3V, 60 mA.
Notes: 1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements a true Fmin is calculated. Refer to the noise parameter application section for more information. 2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate lead. The output reference plane is at the end of the drain lead. The parameters include the effect of four plated through via holes connecting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the carrier. Two 0.020 inch diameter via holes are placed within 0.010 inch from each source lead contact point, one via on each side of that point.
ATF-54143 Typical Scattering Parameters, VDS = 3V, IDS = 80 mA Freq. GHz
0.1 0.5 0.9 1.0 1.5 1.9 2.0 2.5 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0
S11 Mag.
0.98 0.80 0.72 0.70 0.66 0.65 0.64 0.64 0.63 0.66 0.69 0.72 0.73 0.74 0.78 0.84 0.86 0.88 0.89 0.87 0.87 0.86 0.86 0.91
Ang.
-20.4 -85.9 -123.4 -129.9 -154.6 -169.5 -172.8 172.1 158.5 133.8 112.5 94.3 77.4 59.4 42.1 25.6 11.4 -2.6 -17.0 -33.3 -47.3 -55.6 -63.4 -74.2
dB
28.32 25.32 22.10 21.40 18.55 16.81 16.42 14.69 13.24 10.81 8.74 7.03 5.63 4.26 2.98 1.51 0.00 -1.15 -2.18 -3.48 -5.02 -6.65 -7.92 -8.92
S21 Mag.
26.05 18.45 12.73 11.75 8.46 6.92 6.62 5.42 4.59 3.47 2.74 2.25 1.91 1.63 1.41 1.19 1.00 0.88 0.78 0.67 0.56 0.47 0.40 0.36
S12 Ang.
167.1 126.8 105.2 101.3 85.4 74.9 72.6 61.1 50.1 29.9 11.1 -6.5 -23.5 -41.1 -58.7 -76.4 -92.0 -105.9 -121.7 -138.7 -153.9 -165.9 -175.9 171.2
S22 Ang.
79.4 53.3 43.9 42.7 38.6 35.7 35.0 30.6 25.5 13.4 1.2 -11.3 -24.5 -38.1 -51.1 -66.8 -79.8 -91.7 -105.6 -119.5 -132.3 -141.7 -150.4 -163.0
MSG/MAG Ang.
-27.6 -104.9 -138.8 -144.3 -165.0 -177.6 179.4 164.4 150.2 126.1 107.8 91.8 75.5 55.5 37.8 24.0 11.8 -0.8 -16.7 -31.7 -44.9 -54.9 -64.2 -76.2 34.16 27.10 24.15 23.63 21.35 19.89 19.52 18.05 16.80 14.76 13.20 11.96 10.97 10.14 9.32 8.60 8.04 7.52 7.12 6.77 6.42 5.99 5.55 5.37
Mag.
0.01 0.04 0.05 0.05 0.06 0.07 0.07 0.09 0.10 0.12 0.13 0.14 0.15 0.16 0.17 0.16 0.16 0.16 0.15 0.14 0.13 0.12 0.11 0.10
Mag.
0.26 0.29 0.30 0.30 0.30 0.29 0.29 0.29 0.29 0.33 0.39 0.42 0.44 0.47 0.52 0.59 0.64 0.68 0.70 0.73 0.76 0.78 0.79 0.81
Typical Noise Parameters, VDS = 3V, IDS = 80 mA Freq GHz
0.5 0.9 1.0 1.9 2.0 2.4 3.0 3.9 5.0 5.8 6.0 7.0 8.0 9.0 10.0
Fmin dB
0.19 0.24 0.25 0.43 0.42 0.51 0.61 0.70 0.94 1.20 1.26 1.34 1.74 1.82 1.94
opt Mag.
0.23 0.24 0.25 0.28 0.29 0.30 0.35 0.41 0.52 0.56 0.58 0.62 0.63 0.71 0.79
opt Ang.
66.9 84.3 87.3 134.8 138.8 159.5 -173 -141.6 -113.5 -97.1 -94.8 -75.8 -55.5 -37.7 -20.8
Rn/50
0.04 0.04 0.04 0.04 0.04 0.03 0.03 0.06 0.13 0.23 0.26 0.46 0.76 1.17 1.74
Ga dB
MSG/MAG and S21 (dB)
40 35 30 25 20 15 10 5 0 -5 10 -15 0 5 10 FREQUENCY (GHz) 15 20
S21 MSG
27.93 24.13 23.30 18.55 18.15 16.44 15.13 12.97 11.42 10.48 10.11 8.86 7.59 6.97 6.65
Figure 27. MSG/MAG and |S21|2 vs. Frequency at 3V, 80 mA.
Notes: 1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements a true Fmin is calculated. Refer to the noise parameter application section for more information. 2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate lead. The output reference plane is at the end of the drain lead. The parameters include the effect of four plated through via holes connecting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the carrier. Two 0.020 inch diameter via holes are placed within 0.010 inch from each source lead contact point, one via on each side of that point.
ATF-54143 Typical Scattering Parameters, VDS = 4V, IDS = 60 mA Freq. GHz
0.1 0.5 0.9 1.0 1.5 1.9 2.0 2.5 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0
S11 Mag.
0.99 0.81 0.71 0.69 0.64 0.62 0.61 0.60 0.60 0.62 0.65 0.68 0.70 0.72 0.76 0.83 0.86 0.88 0.90 0.87 0.88 0.88 0.87 0.92
Ang.
-18.6 -80.2 -117.3 -123.8 -149.2 -164.5 -167.8 176.6 162.6 137.4 115.9 97.6 80.6 62.6 45.4 28.5 14.1 -0.4 -14.9 -31.4 -46.0 -54.8 -62.8 -73.7
dB
28.88 26.11 23.01 22.33 19.49 17.75 17.36 15.66 14.23 11.91 10.00 8.36 7.01 5.76 4.60 3.28 1.87 0.69 -0.39 -1.72 -3.38 -5.17 -6.73 -7.93
S21 Mag.
27.80 20.22 14.15 13.07 9.43 7.72 7.38 6.07 5.15 3.94 3.16 2.62 2.24 1.94 1.70 1.46 1.24 1.08 0.96 0.82 0.68 0.55 0.46 0.40
S12 Ang.
167.8 128.3 106.4 102.4 86.2 75.7 73.3 61.9 51.1 30.9 11.7 -6.6 -24.3 -42.3 -60.5 -79.6 -97.0 -112.8 -130.2 -148.8 -166.0 179.8 168.4 154.3
S22 Ang.
80.1 52.4 41.7 40.2 36.1 34.0 33.5 30.7 27.3 18.7 9.0 -1.4 -12.9 -24.7 -36.1 -51.8 -65.4 -78.0 -92.2 -107.3 -121.2 -132.2 -142.3 -155.6
MSG/MAG Ang.
-12.6 -52.3 -73.3 -76.9 -89.4 -95.5 -97.0 -104.0 -113.4 -154.7 152.5 127.9 106.9 78.9 56.8 42.1 29.4 16.0 -1.1 -17.6 -32.6 -43.7 -54.2 -67.2 35.41 28.14 25.38 24.83 22.75 21.32 21.04 19.64 18.48 16.46 14.96 13.61 12.57 11.67 10.72 9.88 9.17 8.53 7.99 7.46 6.97 6.41 5.85 5.54
Mag.
0.01 0.03 0.04 0.04 0.05 0.06 0.06 0.07 0.07 0.09 0.10 0.11 0.12 0.13 0.14 0.15 0.15 0.15 0.15 0.15 0.14 0.13 0.12 0.11
Mag.
0.58 0.42 0.31 0.29 0.22 0.18 0.18 0.14 0.11 0.07 0.09 0.12 0.15 0.17 0.23 0.32 0.41 0.47 0.51 0.58 0.63 0.69 0.72 0.75
Typical Noise Parameters, VDS = 4V, IDS = 60 mA Freq GHz
0.5 0.9 1.0 1.9 2.0 2.4 3.0 3.9 5.0 5.8 6.0 7.0 8.0 9.0 10.0
Fmin dB
0.17 0.25 0.27 0.45 0.49 0.56 0.63 0.73 0.96 1.20 1.23 1.33 1.66 1.71 1.85
opt Mag.
0.33 0.31 0.31 0.27 0.27 0.26 0.28 0.35 0.47 0.52 0.54 0.60 0.63 0.71 0.82
opt Ang.
34.30 60.30 68.10 115.00 119.80 143.50 176.80 -145.90 -116.20 -98.80 -96.90 -77.40 -56.20 -38.60 -21.30
Rn/50
0.03 0.04 0.04 0.04 0.04 0.04 0.04 0.05 0.11 0.19 0.21 0.38 0.64 0.99 1.51
Ga dB
MSG/MAG and S21 (dB)
40 35 30 25 20 15 10 5 0 -5 10 -15 0 5 10 FREQUENCY (GHz) 15 20
S21 MSG
28.02 24.12 23.43 18.72 18.35 16.71 15.58 13.62 12.25 11.23 11.02 9.94 8.81 8.22 8.12
Figure 28. MSG/MAG and |S21|2 vs. Frequency at 4V, 60 mA.
Notes: 1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements a true Fmin is calculated. Refer to the noise parameter application section for more information. 2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate lead. The output reference plane is at the end of the drain lead. The parameters include the effect of four plated through via holes connecting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the carrier. Two 0.020 inch diameter via holes are placed within 0.010 inch from each source lead contact point, one via on each side of that point.
ATF-54143 Applications Information
Introduction Agilent Technologies's ATF-54143 is a low noise enhancement mode PHEMT designed for use in low cost commercial applications in the VHF through 6 GHz frequency range. As opposed to a typical depletion mode PHEMT where the gate must be made negative with respect to the source for proper operation, an enhancement mode PHEMT requires that the gate be made more positive than the source for normal operation. Therefore a negative power supply voltage is not required for an enhancement mode device. Biasing an enhancement mode PHEMT is much like biasing the typical bipolar junction transistor. Instead of a 0.7V base to emitter voltage, the ATF-54143 enhancement mode PHEMT requires about a 0.6V potential between the gate and source for a nominal drain current of 60 mA. Matching Networks The techniques for impedance matching an enhancement mode device are very similar to those for matching a depletion mode device. The only difference is in the method of supplying gate bias. S and Noise Parameters for various bias conditions are listed in this data sheet. The circuit shown in Figure 1 shows a typical LNA circuit normally used for 900 and 1900 MHz applications. High pass impedance matching networks consisting of L1/C1 and L4/C4 provide the appropriate match for noise figure, gain, S11 and S22. The high pass structure also provides low frequency gain reduction which can be beneficial from the standpoint of improving out-of-band rejection at lower frequencies.
INPUT Zo
C1 Q1 L1 L2 R4 C2 L3 C5 R3 C3 R1 R2 C6
C4 Zo
OUTPUT
L4
Vdd
Figure 1. Typical ATF-54143 LNA with Passive Biasing.
Capacitors C2 and C5 provide a low impedance in-band RF bypass for the matching networks. Resistors R3 and R4 provide a very important low frequency termination for the device. The resistive termination improves low frequency stability. Capacitors C3 and C6 provide the low frequency RF bypass for resistors R3 and R4. Their value should be chosen carefully as C3 and C6 also provide a termination for low frequency mixing products. These mixing products are as a result of two or more in-band signals mixing and producing third order in-band distortion products. The low frequency or difference mixing products are bypassed by C3 and C6. For best suppression of third order distortion products based on the CDMA 1.25 MHz signal spacing, C3 and C6 should be 0.1 F in value. Smaller values of capacitance will not suppress the generation of the 1.25 MHz difference signal and as a result will show up as poorer two tone IP3 results. Bias Networks One of the major advantages of the enhancement mode technology is that it allows the designer to be able to dc ground the source leads and then merely apply a positive voltage on the gate to set the desired amount of quiescent drain current Id.
Whereas a depletion mode PHEMT pulls maximum drain current when Vgs = 0V, an enhancement mode PHEMT pulls only a small amount of leakage current when Vgs = 0V. Only when Vgs is increased above Vto, the device threshold voltage, will drain current start to flow. At a Vds of 3V and a nominal Vgs of 0.6V, the drain current Id will be approximately 60 mA. The data sheet suggests a minimum and maximum Vgs over which the desired amount of drain current will be achieved. It is also important to note that if the gate terminal is left open circuited, the device will pull some amount of drain current due to leakage current creating a voltage differential between the gate and source terminals. Passive Biasing Passive biasing is the simplest form of biasing the ATF-54143. The voltage divider consisting of resistors R1 and R2 sets the desired Vgs. Resistor R3 in addition to being the low frequency resistive termination also provides some voltage feedback for the device. The amount of current allowed to flow in R1 and R2 depends on the amount of gate leakage current the device pulls. Normal leakage current is usually only a few microamps. As the device is driven closer to P1dB, the leakage current will increase. The bias supply should maintain a constant gate voltage under all drive conditions. Resistor R3 is calculated based on desired Vds, Ids and available power supply voltage. R3 = VDD - Vds Ids + IBB VDD is the power supply voltage. Vds is the device drain to source voltage. (1)
Ids is the desired drain current. IBB is the current flowing through the R1/R2 resistor voltage divider network. The value of resistors R1 and R2 are calculated with the following formulas
INPUT Zo
C1 Q1 L1 L2 R5 C2 L3 C5 R4 C3 R6 C6 Q2 R7
C4 Zo
OUTPUT
and rearranging equation (5) provides the following formula R1 = IBB VDD V - VB 1 + DD VB (5A)
L4
(
)
Vdd R3 R2
R1 =
Vgs IBB
(2)
R1
Example Circuit VDD = 5V Vds = 3V Ids = 60 mA R4 = 10 VBE = 0.7 V Equation (1) calculates the required voltage at the emitter of the PNP transistor based on desired Vds and Ids through resistor R4 to be 3.6V. Equation (2) calculates the value of resistor R3 which determines the drain current Ids. In the example R3=23.3. Equation (3) calculates the voltage required at the junction of resistors R1 and R2. This voltage plus the step-up of the base emitter junction determines the regulated Vds. Equations (4) and (5) are solved simultaneously to determine the value of resistors R1 and R2. In the example R1=1450 and R2 =1050. Resistors R6 and R7 are 1 k each and are normally not critical for low noise operation. As the device is driven closer to P1dB, the impedance represented by R6 and R7 may have to be decreased in order to maintain a more constant bias point. R7 is used as a "keepalive" resistor for the PNP transistor. Without R7, the collector current flowing through the PNP transistor is hardly enough to turn the transistor on.
R2 =
(Vds - Vgs) R1 Vgs
Figure 2. Typical ATF-54143 LNA with Active Biasing.
(3) An active bias scheme is shown in Figure 2. R1 and R2 provide a constant voltage source at the base of a PNP transistor at Q2. The constant voltage at the base of Q2 is raised by 0.7 volts at the emitter. The constant emitter voltage plus the regulated VDD supply are present across resistor R3. Constant voltage across R3 provides a constant current supply for the drain current. Resistors R1 and R2 are used to set the desired Vds. The combined series value of these resistors also sets the amount of extra current consumed by the bias network. The equations that describe the circuit's operation are as follows. VE = Vds + (Ids * R4) R3 = VDD - VE Ids (1) (2) (3) (4) (5)
Example Circuit VDD = 5 V Vds = 3V Ids = 60 mA Vgs = 0.59V Choose IBB to be at least 10X the maximum expected gate leakage current. IBB was chosen to be 2 mA for this example. Using equations (1), (2), and (3) the resistors are calculated as follows R1 = 295 R2 = 1205 R3 = 32.3 Active Biasing Active biasing provides a means of keeping the quiescent bias point constant over temperature and constant over lot to lot variations in device dc performance. The advantage of the active biasing of an enhancement mode PHEMT versus a depletion mode PHEMT is that a negative power source is not required. The techniques of active biasing an enhancement mode device are very similar to those used to bias a bipolar junction transistor.
VB = VE - VBE VB = R1 V R1 + R2 DD
VDD = IBB (R1 + R2)
Rearranging equation (4) provides the following formula R2 = R1 (VDD - VB) VB (4A)
ATF-54143 Die Model
Var Egn Advanced_Curtice2_Model MESFETM1 NFET=yes Rf= PFET=no Gscap=2 Vto=-0.3 Cgs=cgs Beta=beta Cgd=cgd Lambda=72e-3 Gdcap=2 Alpha=13 Fc=0.65 Tau= Rgd=fgd Ohm Tnom=16.85 Rd=rd Ohm Idstc= Ucriti=0.72 Rg=1.7 Ohm Vgexp=1.91 Rs=rs Ohm Gamds=1e-4 Ld=ld pH Vtotc= Lg=lg pH Betatce= Ls=ls pH Rgs=rgs Ohm Cds=cds Rc=rc Ohm
VAR VAR2 w=800 VAR VAR3 beta=0.222*W/200 VAR VAR4 cgs=433*W/200 VAR VAR5 cgd=64*W/200 VAR VAR6 cds=68*W/200 VAR VAR7 Ig=47*W/200
Var Egn Var Egn
VAR VAR8 rgs=1*200/W VAR VAR9 rgd=1*200/W VAR VAR10 rd=4.05*200/W VAR VAR11 rs=1.35*200/W VAR VAR12 rc=780*200/W VAR VAR13 Id=0.0*200/W VAR VAR14 Is=0.0*200/W
Crf=0.1 F Gsfwd= Gsrev= Gdfwd= Gdrev= R1= R2= Vbi=0.95 Vbr= Vjr= Is= Ir= Imax Xti= Eg=
N= Fnc=1 MHz R=0.08 P=0.2 C=0.1 Taumdl=no wVgfwd= wBvgs= wBvgd= wBvds= wldsmax= wPmax= AllParams=
Var Egn Var Egn Var Egn Var Egn Var Egn
Var Egn Var Egn Var Egn Var Egn Var Egn
ATF-54143 curtice ADS Model
INSIDE Package
Var Egn
VAR VAR1 K=5 Z2=85 Z1=30
GATE
Port G Num=1 TLINP TL4 Z=Z1 Ohm L=15 mil K=1 A=0.000 F=1 GHz TanD=0.001
C C2 C=0.1 pF TLINP TL3 Z=Z2 Ohm L=25 mil K=K A=0.000 F=1 GHz TanD=0.001
TLINP TL1 Z=Z2/2 Ohm L=20 0 mil K=K A=0.0000 F=1 GHz TanD=0.001 L L1 L=0.477 nH R=0.001
TLINP TL2 Z=Z2/2 Ohm L=20 0 mil K=K A=0.0000 F=1 GHz TanD=0.001 L L6 L=0.175 nH GaAsFET R=0.001 FET1 Mode1=MESFETM1 C Area= C3 Temp= C=0.11 pF Mode=Nonlinear L L7 L=0.746 nH R=0.001 TLINP TL7 Z=Z2/2 Ohm L=5.0 mil K=K A=0.0000 F=1 GHz TanD=0.001 TLINP TL5 Z=Z2 Ohm L=26.0 mil K=K A=0.0000 F=1 GHz TanD=0.001 TLINP TL8 Z=Z1 Ohm L=15.0 mil K=1 A=0.0000 F=1 GHz TanD=0.001 TLINP TL6 Z=Z1 Ohm L=15.0 mil K=1 A=0.0000 F=1 GHz TanD=0.001
SOURCE
Port S2 Num=4
DRAIN
Port D Num=3
SOURCE
Port S1 Num=2 TLINP TL10 Z=Z1 Ohm L=15 mil K=1 A=0.000 F=1 GHz TanD=0.001 TLINP TL9 Z=Z2 Ohm L=10.0 mil K=K A=0.000 F=1 GHz TanD=0.001 L L4 L=0.298 nH R=0.001 MSub MSUB MSub1 H=25.0 mil Er=9.6 Mur=1 Cond=1.0E+50 Hu=3.9e+034 mil T=0.15 mil TanD=0 Rough=0 mil
Designing with S and Noise Parameters and the Non-Linear Model The non-linear model describing the ATF-54143 includes both the die and associated package model. The package model includes the effect of the pins but does not include the effect of the additional ground-plane associated with grounding the source leads through the printed circuit board. The device S and Noise Parameters do include the effect of 0.020 inch thickness printed circuit board vias. When comparing simulation results between the measured S parameters and the
simulated non-linear model, be sure to include the effect of the printed circuit board to get an accurate comparison. This is shown schematically in Figure 3. For Further Information The information presented here is an introduction to the use of the ATF-54143 enhancement mode PHEMT. More detailed application circuit information is available from Agilent Technologies. Consult the web page or your local Agilent Technologies sales representative.
VIA2 V1 D=20.0 mil H=25.0 mil T=0.15 mil Rho=1.0 W=40.0 mil
DRAIN
SOURCE
VIA2 V3 D=20.0 mil H=25.0 mil T=0.15 mil Rho=1.0 W=40.0 mil
ATF-54143
SOURCE VIA2 V2 D=20.0 mil H=25.0 mil T=0.15 mil Rho=1.0 W=40.0 mil
GATE
VIA2 V4 D=20.0 mil H=25.0 mil T=0.15 mil Rho=1.0 W=40.0 mil
MSub
MSUB MSub1 H=25.0 mil Er=9.6 Mur=1 Cond=1.0E+50 Hu=3.9e+034 mil T=0.15 mil TanD=0 Rough=0 mil
Figure 3. Adding Vias to the ATF-54143 Non-Linear Model for Comparison to Measured S and Noise Parameters.
Noise Parameter Applications Information Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements, a true Fmin is calculated. Fmin represents the true minimum noise figure of the device when the device is presented with an impedance matching network that transforms the source impedance, typically 50, to an impedance represented by the reflection coefficient o. The designer must design a matching network that will present o to the device with minimal associated circuit losses. The noise figure of the completed amplifier is equal to the noise figure of the device plus the losses of the matching network preceding the device. The noise figure of the device is equal to Fmin only when the device is presented with o. If the reflection coefficient of the matching network is other
than o, then the noise figure of the device will be greater than Fmin based on the following equation. NF = Fmin + 4 Rn |s - o | 2 Zo (|1 + o| 2) (1 - s| 2) Where Rn /Zo is the normalized noise resistance, o is the optimum reflection coefficient required to produce Fmin and s is the reflection coefficient of the source impedance actually presented to the device. The losses of the matching networks are non-zero and they will also add to the noise figure of the device creating a higher amplifier noise figure. The losses of the matching networks are related to the Q of the components and associated printed circuit board loss. o is typically fairly low at higher frequencies and increases as frequency is lowered. Larger gate width devices will typically have a lower o as compared to narrower gate width devices. Typically for FETs, the higher o usually infers that an impedance
much higher than 50 is required for the device to produce Fmin. At VHF frequencies and even lower L Band frequencies, the required impedance can be in the vicinity of several thousand ohms. Matching to such a high impedance requires very hi-Q components in order to minimize circuit losses. As an example at 900 MHz, when airwwound coils (Q > 100) are used for matching networks, the loss can still be up to 0.25 dB which will add directly to the noise figure of the device. Using muiltilayer molded inductors with Qs in the 30 to 50 range results in additional loss over the airwound coil. Losses as high as 0.5 dB or greater add to the typical 0.15 dB Fmin of the device creating an amplifier noise figure of nearly 0.65 dB. A discussion concerning calculated and measured circuit losses and their effect on amplifier noise figure is covered in Agilent Application 1085.
Ordering Information Part Number
ATF-54143-TR1 ATF-54143-TR2 ATF-54143-BLK
No. of Devices
3000 10000 100
Container
7" Reel 13"Reel antistatic bag
Package Dimensions Outline 43 SOT-343 (SC70 4-lead)
1.30 (0.051) BSC 1.30 (.051) REF
2.60 (.102) E E1 1.30 (.051)
0.55 (.021) TYP 1.15 (.045) BSC e D h 1.15 (.045) REF
0.85 (.033)
A
b TYP
A1 L DIMENSIONS
C TYP
SYMBOL A A1 b C D E e h E1 L
MAX. MIN. 1.00 (0.039) 0.80 (0.031) 0.10 (0.004) 0 (0) 0.35 (0.014) 0.25 (0.010) 0.20 (0.008) 0.10 (0.004) 2.10 (0.083) 1.90 (0.075) 2.20 (0.087) 2.00 (0.079) 0.65 (0.025) 0.55 (0.022) 0.450 TYP (0.018) 1.35 (0.053) 1.15 (0.045) 0.35 (0.014) 0.10 (0.004) 10 0
DIMENSIONS ARE IN MILLIMETERS (INCHES)
Device Orientation
REEL TOP VIEW 4 mm END VIEW
CARRIER TAPE USER FEED DIRECTION COVER TAPE
8 mm
71
71
71
71
Tape Dimensions For Outline 4T
P P0 D P2
E
F W C
D1 t1 (CARRIER TAPE THICKNESS) Tt (COVER TAPE THICKNESS)
8 MAX.
K0
5 MAX.
A0
B0
DESCRIPTION CAVITY LENGTH WIDTH DEPTH PITCH BOTTOM HOLE DIAMETER DIAMETER PITCH POSITION WIDTH THICKNESS WIDTH TAPE THICKNESS CAVITY TO PERFORATION (WIDTH DIRECTION) CAVITY TO PERFORATION (LENGTH DIRECTION)
SYMBOL A0 B0 K0 P D1 D P0 E W t1 C Tt F P2
SIZE (mm) 2.24 0.10 2.34 0.10 1.22 0.10 4.00 0.10 1.00 + 0.25 1.55 0.05 4.00 0.10 1.75 0.10 8.00 0.30 0.255 0.013 5.4 0.10 0.062 0.001 3.50 0.05 2.00 0.05
SIZE (INCHES) 0.088 0.004 0.092 0.004 0.048 0.004 0.157 0.004 0.039 + 0.010 0.061 0.002 0.157 0.004 0.069 0.004 0.315 0.012 0.010 0.0005 0.205 0.004 0.0025 0.00004 0.138 0.002 0.079 0.002
PERFORATION
CARRIER TAPE COVER TAPE DISTANCE
www.semiconductor.agilent.com Data subject to change. Copyright (c) 2000 Agilent Technologies, Inc. December 29, 2000 5988-0450EN

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