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| 2SJ408(L), 2SJ408(S) Silicon P-Channel MOS FET November 1996 Application High speed power switching Features * * * * * * Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for Switching regulator, DC - DC converter Avalanche Ratings Outline HDPAK 4 4 1 D G 1 2 3 2 3 S 1. Gate 2. Drain 3. Source 4. Drain 2SJ408(L), 2SJ408(S) Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes 1. PW 10 s, duty cycle 1% 2. Value at Tc = 25C 3. Value at Tch = 25C, Rg 50 Symbol VDSS VGSS ID ID(pulse)* IDR IAP* 3 1 Ratings -60 20 -50 -200 -50 -50 Unit V V A A A A mJ W C C EAR* Tch 3 214 2 Pch* 100 150 -55 to +150 Tstg 2 2SJ408(L), 2SJ408(S) Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol V(BR)DSS V(BR)GSS IGSS VGS(off) Min -60 20 -- -- -1.0 -- -- Forward transfer admittance Input capacitance |yfs| Ciss 30 -- Typ -- -- -- -- -- 0.015 0.02 50 8200 Max -- -- 10 -250 -2.25 0.02 0.028 -- -- Unit V V A A V S pF Test conditions ID = -10 mA, VGS = 0 IG = 100 A, VDS = 0 VGS = 16 V, VDS = 0 VDS = -50 V, VGS = 0 ID = -1 mA, VDS = -10 V ID = -25 A 1 VGS = -10 V* ID = -25 A 1 VGS = -4 V* ID = -25 A 1 VDS = -10 V* VDS = -10 V VGS = 0 f = 1 MHz Zero gate voltage drain current IDSS Gate to source cutoff voltage Static drain to source on state RDS(on) resistance Output capacitance Reverse transfer capacitance Turn-on delay time Coss Crss td(on) -- -- -- 3650 750 55 -- -- -- pF pF ns ID = -25 A VGS = -10 V RL = 1.2 Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note 1. Pulse Test tr td(off) tf VDF trr -- -- -- -- -- 340 1150 620 -1.0 250 -- -- -- -- -- ns ns ns V ns IF = -50 A, VGS = 0 IF = -50 A, VGS = 0, diF/dt = 50 A/s 3 2SJ408(L), 2SJ408(S) Power vs. Temperature Derating 150 Pch (W) Channel Dissipation 100 50 0 50 100 Tc (C) 150 Case Temperature -1000 I D (A) -300 -100 -30 -10 -3 Maximum Safe Operation Area 10 PW DC Op 10 0 s Drain Current = 10 1m m s s s er (1 Operation in at sh ion this area is ot (T ) c= limited by R DS(on) 25 C ) -1 Ta = 25 C -0.5 -1 -2 -5 -10 -20 -50 -100 Drain to Source Voltage V DS (V) Typical Output Characteristics -100 -10 V -6 V -4 V Pulse Test -3.5 V I D (A) Drain Current -80 -60 -3 V -40 -20 VGS = -2.5 V -2 -4 -6 Drain to Source Voltage -8 -10 V DS (V) 0 4 2SJ408(L), 2SJ408(S) Typical Transfer Characteristics -50 V DS = -10 V Pulse Test ID Drain Current (A) -40 -30 Tc = 75C 25C -25C -10 -20 0 -1 -2 -3 Gate to Source Voltage -4 -5 V GS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage V DS(on) (V) -2.0 Pulse Test -1.6 Drain to Source Voltage -1.2 I D = -50 A -0.8 -0.4 -20 A -10 A 0 -4 -2 -6 Gate to Source Voltage -8 -10 V GS (V) Drain to Source On State Resistance R DS(on) ( ) 100 50 Static Drain to Source on State Resistance vs. Drain Current 20 10 5 VGS = -4 V -10 V 2 1 -1 Pulse Test -3 -10 -30 -100 -300 -1000 Drain Current I D (A) 5 2SJ408(L), 2SJ408(S) Static Drain to Source on State Resistance R DS(on) ( ) Static Drain to Source on State Resistance vs. Temperature 50 Pulse Test 40 I D = -50 A V GS = -4 V 20 -10 A -20 A -50 A -10 A -20 A 30 10 -10 V 0 -40 0 40 80 120 160 Case Temperature Tc (C) Forward Transfer Admittance vs. Drain Current Forward Transfer Admittance |yfs| (S) 100 50 20 10 5 2 1 0.5 -0.1 -0.3 -1 -3 V DS = -10 V Pulse Test -10 -30 -100 Drain Current I D (A) Tc = -25 C 25 C 75 C 6 2SJ408(L), 2SJ408(S) Body to Drain Diode Reverse Recovery Time 1000 Reverse Recovery Time trr (ns) 500 200 100 50 di / dt = 50 A / s V GS = 0, Ta = 25 C -50 -100 -2 -5 -10 -20 Reverse Drain Current I DR (A) Typical Capacitance vs. Drain to Source Voltage 20 10 -1 100000 Capacitance C (pF) 30000 10000 3000 1000 VGS = 0 f = 1 MHz Ciss Coss Crss 300 100 0 -10 -20 -30 -40 -50 Drain to Source Voltage V DS (V) Dynamic Input Characteristics V DS (V) V DD = -10 V -25 V -50 V V GS (V) Gate to Source Voltage 0 0 -20 -4 Drain to Source Voltage -40 V DS V DD = -50 V -25 V -10 V V GS -8 -60 -12 -80 -100 0 -16 I D = -50 A -20 1000 200 400 600 800 Gate Charge Qg (nc) 7 2SJ408(L), 2SJ408(S) 5000 2000 t d(off) 1000 500 tr 200 100 t d(on) 50 -1 -2 -5 -10 -20 -50 -100 Drain Current I D (A) tf Switching Characteristics V GS = -10 V, V DD = -30 V PW = 5 s, duty < 1 % Switching Time t (ns) Reverse Drain Current vs. Source to Drain Voltage -100 Pulse Test Reverse Drain Current I DR (A) -80 -10 V -5 V V GS = 0 -60 -40 -20 0 -0.4 -0.8 -1.2 -1.6 -2.0 Source to Drain Voltage V SD (V) Maximun Avalanche Energy vs. Channel Temperature Derating Repetive Avalanche Energy E AR (mJ) 250 I AP = -50 A V DD = -25 V duty < 0.1 % Rg > 50 200 150 100 50 0 25 50 75 100 125 150 Channel Temperature Tch (C) 8 2SJ408(L), 2SJ408(S) Avalanche Test Circuit and Waveform EAR = 1 2 * L * I AP * 2 VDSS VDSS - V DD V DS Monitor L I AP Monitor V (BR)DSS I AP VDD ID V DS Rg Vin -15 V D. U. T 50 0 VDD Normalized Transient Thermal Impedance vs. Pulse Width 3 Normalized Transient Thermal Impedance s (t) Tc = 25C 1 D=1 0.5 0.3 0.2 0.1 0.05 0.1 ch - c(t) = s (t) * ch - c ch - c = 1.25 C/W, Tc = 25 C PDM PW T 0.02 1 0.0 lse u tp ho 1s D= 0.03 PW T 0.01 10 100 1m 10 m Pulse Width 100 m PW (S) 1 10 9 2SJ408(L), 2SJ408(S) When using this document, keep the following in mind: 1. This document may, wholly or partially, be subject to change without notice. 2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without Hitachi's permission. 3. Hitachi will not be held responsible for any damage to the user that may result from accidents or any other reasons during operation of the user's unit according to this document. 4. Circuitry and other examples described herein are meant merely to indicate the characteristics and performance of Hitachi's semiconductor products. Hitachi assumes no responsibility for any intellectual property claims or other problems that may result from applications based on the examples described herein. 5. No license is granted by implication or otherwise under any patents or other rights of any third party or Hitachi, Ltd. 6. MEDICAL APPLICATIONS: Hitachi's products are not authorized for use in MEDICAL APPLICATIONS without the written consent of the appropriate officer of Hitachi's sales company. Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi's products are requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL APPLICATIONS. 10 |
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