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LTC5509 300MHz to 3GHz RF Power Detector in SC70 Package FEATURES s s s s s s s s DESCRIPTIO Temperature Compensated Internal Schottky Diode RF Detector Wide Input Frequency Range: 300MHz to 3GHz Wide Input Power Range: -30dBm to 6dBm Buffered Detector Output Wide VCC Range of 2.7V to 6V Low Operating Current: 600A Low Shutdown Current: <2A SC70 Package The LTC(R)5509 is an RF power detector for RF applications operating in the 300MHz to 3GHz range. A temperature compensated Schottky diode peak detector and buffer amplifier are combined in a small SC70 package. The supply voltage range is optimized for operation from a single lithium-ion cell or 3xNiMH. The RF input voltage is peak detected using an on-chip Schottky diode. The detected voltage is buffered and supplied to the VOUT pin without gain compression. Consequently, the output voltage is linearly proportional to the RF input voltage. A power saving shutdown mode reduces supply current to less than 2A. The LTC5509 operates with input power levels from -30dBm to 6dBm. , LTC and LT are registered trademarks of Linear Technology Corporation. APPLICATIO S s s s s s s Multimode Mobile Phone Products Optical Data Links Wireless Data Modems Wireless and Cable Infrastructure RF Power Alarm Envelope Detector TYPICAL APPLICATIO Output Voltage vs RF Input Power 3000 VCC = 3.6V TA = 25C 850MHz 1.85GHz 2000 3GHz 1500 1000 500 0 0 -30 -25 -20 -15 -10 -5 RF INPUT POWER (dBm) RF INPUT 33pF 6 2 LTC5509 VCC 4 RFIN GND SHDN GND 5 100pF VCC 0.1F DISABLE ENABLE 1 VOUT 3 VOUT 5509 TA01 VOUT OUTPUT VOLTAGE (mV) 300MHz to 3GHz RF Power Detector 2500 U 5 10 5509 TA02 U U 5509f 1 LTC5509 ABSOLUTE (Note 1) AXI U RATI GS PACKAGE/ORDER I FOR ATIO ORDER PART NUMBER TOP VIEW SHDN 1 GND 2 VOUT 3 6 RFIN 5 GND 4 VCC VCC, VOUT to GND .................................... -0.3V to 6.5V RFIN Voltage .........................................(VCC 1V) to 7V SHDN Voltage to GND ................ -0.3V to (VCC + 0.3V) IVOUT ...................................................................... 5mA Operating Temperature Range (Note 2) .. - 40C to 85C Maximum Junction Temperature ......................... 125C Storage Temperature Range ................ - 65C to 150C Lead Temperature (Soldering, 10 sec)................. 300C LTC5509ESC6 SC6 PART MARKING LADD SC6 PACKAGE 6-LEAD PLASTIC SC70 TJMAX = 125C, JA = 256C/W Consult LTC Marketing for parts specified with wider operating temperature ranges. The q denotes the specifications which apply over the full operating temperature range, otherwise specifications are at TA = 25C. VCC = 3.6V, SHDN = VCC = HI, SHDN = 0V = LO, RF Input Signal is Off, unless otherwise noted. PARAMETER VCC Operating Voltage IVCC Shutdown Current IVCC Operating Current VOUT VOL (No RF Input) VOUT Output Current VOUT Enable Time VOUT Bandwidth VOUT Load Capacitance VOUT Slew Rate VOUT Noise SHDN Voltage, Chip Disabled SHDN Voltage, Chip Enabled SHDN Input Current RFIN Input Frequency Range RFIN Input Power Range RFIN AC Input Resistance RFIN Input Shunt Capacitance RF Frequency = 300MHz to 3GHz (Note 5, 6) F = 300MHz, Pin = -25dBm F = 300MHz, Pin = -25dBm SHDN = LO SHDN = HI, IVOUT = 0mA RLOAD = 2k, SHDN = HI, Enabled SHDN = LOW, Disabled VOUT = 1.75V, VCC = 2.7V, VOUT = 10mV SHDN = HI, CLOAD = 33pF, RLOAD = 2k CLOAD = 33pF, RLOAD = 2k (Note 4) (Note 6) VRFIN = 0.7V Step, CLOAD = 33pF, RLOAD = 2k (Note 3) VCC = 3V, Noise BW = 1.5MHz, 50 RF Input Termination VCC = 2.7V to 6V VCC = 2.7V to 6V SHDN = 3.6V q q q q q q ELECTRICAL CHARACTERISTICS CONDITIONS MIN q q q TYP MAX 6 2 UNITS V A mA mV mV mA s MHz pF V/s mVP-P 2.7 0.58 150 1 250 1 2 8 1.5 0.85 400 20 33 8 2 0.35 1.4 24 300 to 3000 -30 to 6 150 0.9 40 Note 1: Absolute Maximum Ratings are those values beyond which the life of a device may be impaired. Note 2: Specifications over the -40C to 85C operating temperature range are assured by design, characterization and correlation with statistical process controls. Note 3: The rise time at VOUT is measured between VOUT/2 + 0.5V to VOUT/2 - 0.5V. Note 4: Bandwidth is calculated using the 10% to 90% rise time equation: BW = 0.35/rise time. Note 5: RF performance is tested at 1800MHz Note 6: Guaranteed by design. 2 U V V A MHz dBm pF 5509f W U U WW W LTC5509 TYPICAL PERFOR A CE CHARACTERISTICS Supply Current vs Supply Voltage 650 305 VOUT OUTPUT VOLTAGE (mV) SUPPLY CURRENT (A) 300 VOUT OUTPUT VOLTAGE (mV) 600 TA = -40C TA = 25C TA = 85C 550 2.5 3 5 3.5 4 4.5 SUPPLY VOLTAGE (V) 5.5 6 Typical Detector Characteristics, 1850MHz 3000 2500 2000 TA = 25C 1500 TA = -40C 1000 TA = 85C 500 0 0 -30 -25 -20 -15 -10 -5 RF INPUT POWER (dBm) VCC = 3.6V 3000 2500 2000 VOUT OUTPUT VOLTAGE (mV) VOUT OUTPUT VOLTAGE (mV) TA = 25C 1500 TA = -40C 1000 TA = 85C 500 0 0 -30 -25 -20 -15 -10 -5 RF INPUT POWER (dBm) VOUT SLOPE (mV/dB) VOUT Slope vs RF Input Power at 1850MHz 1000 VCC = 3.6V 1000 VOUT SLOPE (mV/dB) 100 VOUT SLOPE (mV/dB) 10 TA = -40C 1 -30 -25 -20 UW 5509 G01 Output Voltage vs Supply Voltage (RF Input Signal Off) 3000 2500 2000 Typical Detector Characteristics, 850MHz VCC = 3.6V TA = -40C TA = 25C 1500 TA = -40C 1000 TA = 85C 500 0 0 -30 -25 -20 -15 -10 -5 RF INPUT POWER (dBm) 295 TA = 25C 290 TA = 85C 285 2.5 3 5 3.5 4 4.5 SUPPLY VOLTAGE (V) 5.5 6 5 10 5509 G02 5509 G03 Typical Detector Characteristics, 3000MHz VCC = 3.6V VOUT Slope vs RF Input Power at 850MHz 1000 VCC = 3.6V 100 10 TA = -40C TA = 85C TA = 25C 5 10 5 10 1 -30 -25 -20 -15 -10 -5 0 5 5509 G06 RF INPUT POWER (dBm) 5509 G05 5509 G04 VOUT Slope vs RF Input Power at 3000MHz VCC = 3.6V 100 TA = 85C TA = 25C 10 TA = -40C TA = 85C TA = 25C -15 -10 -5 0 5 5509 G07 1 -30 -25 -20 -15 -10 -5 0 5 5509 G08 RF INPUT POWER (dBm) RF INPUT POWER (dBm) 5509f 3 LTC5509 TYPICAL PERFOR A CE CHARACTERISTICS RFIN Input Impedance (Pin = 0dBm, VCC = 3.6V, TA = 25C) PNT # 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 FREQUENCY (GHz) 0.300 0.468 0.637 0.806 0.975 1.143 1.312 1.481 1.650 1.818 1.987 2.156 2.325 2.493 2.662 2.831 3.000 RESISTANCE () 185.434 173.804 161.644 149.450 137.402 126.251 114.165 100.350 89.015 80.586 73.674 67.737 62.354 57.833 53.701 50.166 47.094 REACTANCE () - 62.632 - 65.491 - 71.893 - 76.830 - 79.300 - 81.429 - 84.108 - 83.547 - 80.053 - 74.762 - 70.242 - 66.323 - 61.497 - 57.213 - 53.443 - 48.992 - 44.997 RFIN Input Impedance (Pin = -25dBm, VCC = 3.6V, TA = 25C) PNT # 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 FREQUENCY (GHz) 0.300 0.468 0.637 0.806 0.975 1.143 1.312 1.481 1.650 1.818 1.987 2.156 2.325 2.493 2.662 2.831 3.000 RESISTANCE () 146.073 140.112 133.522 127.142 120.560 114.518 107.427 96.348 86.158 79.014 73.054 67.785 63.701 59.598 55.559 52.713 49.898 REACTANCE () - 48.091 - 44.500 - 46.654 - 50.559 - 52.094 - 53.472 - 58.362 - 61.184 - 59.226 - 55.746 - 52.613 - 49.515 - 46.430 - 43.378 - 40.355 - 37.150 - 34.268 4 UW S11 Forward Reflection Impedance 0.300000GHz TO 3.000000GHz 5509 TA03 S11 Forward Reflection Impedance 0.300000GHz TO 3.000000GHz 5509 TA04 5509f LTC5509 PI FU CTIO S SHDN (Pin 1): Shutdown Input. A logic low on the SHDN pin places the part in shutdown mode. A logic high enables the part. SHDN has an internal 150k pull down resistor to ensure that the part is in shutdown when no input is applied. GND (Pin 2, 5): Ground. VOUT (Pin 3): Detector Output. VCC (Pin 4): Power Supply Voltage, 2.7V to 6V. VCC should be bypassed appropriately with ceramic capacitors. RFIN (Pin 6): RF Input Voltage. Referenced to VCC. A coupling capacitor must be used to connect to the RF signal source. The frequency range is 300MHz to 3GHz. This pin has an internal 250 termination, an internal Schottky diode detector and a peak detector capacitor. BLOCK DIAGRA RFSOURCE 33pF TO 200pF (DEPENDING ON APPLICATION) RFIN 6 30k 100 60A GND 2 GND 5 W U U U VCC 4 + BUFFER 3 VOUT - 30k 250 27k 28pF 27k 100 + RF DET 130mV - 40k 150k BIAS 60A 1 SHDN 5509 BD 5509f 5 LTC5509 APPLICATIO S I FOR ATIO Operation The LTC5509 RF detector integrates several functions to provide RF power detection over frequencies ranging from 300MHz to 3GHz. These functions include an internally compensated buffer amplifier, an RF Schottky diode peak detector and level shift amplifier to convert the RF feedback signal to DC and a delay circuit to avoid voltage transients at VOUT when coming out of shutdown. The LTC5509 does not incorporate gain compression. Consequently, it offers a linear transfer relationship between RF input voltage and DC output voltage. Buffer Amplifier The buffer amplifier is capable of driving a 2mA load. The buffer amplifier typically has an output voltage range of 0.25V to 3V with VCC = 3.6V. At lower supply voltages the maximum output swing is reduced. RF Detector The internal RF Schottky diode peak detector and level shift amplifier converts the RF input signal to a low frequency signal. The detector demonstrates excellent efficiency and linearity over a wide range of input power. VCC R3 22k C1 33pF SHDN RF LTC5509 JP1 VOUT GND E2 E3 R2 68 (OPT) C5 (OPT) GND VOUT GND VCC C2 0.1F C3 100pF E5 GND 5509 AI01 E4 SHDN ENABLE 1 2 DISABLE 3 6 U The Schottky detector is biased at about 60A and drives a peak detector capacitor of 28pF. Modes of Operation MODE Shutdown Enable SHDN Low High OPERATION Disabled Power Detect W U U Applications The LTC5509 can be used as a self-standing signal strength measuring receiver for a wide range of input signals from -30dBm to 6dBm for frequencies from 300MHz to 3GHz. The LTC5509 can be used as a demodulator for AM and ASK modulated signals with data rates up to 1.5MHz. Depending on specific application needs, the RSSI output can be split into two branches, providing AC-coupled data (or audio) output and DC-coupled, RSSI output for signal strength measurements and AGC. The LTC5509 can be used for RF power detection and control. Refer to Application Note 91, "Low Cost Coupling Methods for RF Power Detectors Replace Directional Couplers." Demo Board Schematic RFIN J1 R1 68 (OPT) VCC E1 VCC 5509f LTC5509 PACKAGE DESCRIPTIO 0.47 MAX 0.65 REF 3.26 MAX 2.1 REF RECOMMENDED SOLDER PAD LAYOUT PER IPC CALCULATOR 0.10 - 0.40 0.10 - 0.30 NOTE: 1. DIMENSIONS ARE IN MILLIMETERS 2. DRAWING NOT TO SCALE 3. DIMENSIONS ARE INCLUSIVE OF PLATING 4. DIMENSIONS ARE EXCLUSIVE OF MOLD FLASH AND METAL BURR 5. MOLD FLASH SHALL NOT EXCEED 0.254mm 6. DETAILS OF THE PIN 1 INDENTIFIER ARE OPTIONAL, BUT MUST BE LOCATED WITHIN THE INDEX AREA 7. EIAJ PACKAGE REFERENCE IS EIAJ SC-70 0.10 - 0.18 (NOTE 3) Information furnished by Linear Technology Corporation is believed to be accurate and reliable. However, no responsibility is assumed for its use. Linear Technology Corporation makes no representation that the interconnection of its circuits as described herein will not infringe on existing patent rights. U SC6 Package 6-Lead Plastic SC70 (Reference LTC DWG # 05-08-1638) 1.80 - 2.20 (NOTE 4) 1.16 REF 0.96 MIN 1.80 - 2.40 1.15 - 1.35 (NOTE 4) INDEX AREA (NOTE 6) PIN 1 0.65 BSC 0.15 - 0.30 6 PLCS (NOTE 3) 0.80 - 1.00 0.00 - 0.10 REF 1.00 MAX SC6 SC70 0802 5509f 7 LTC5509 RELATED PARTS PART NUMBER LTC1757A LTC1758 LTC1957 LTC4400 LTC4401 LTC4403 LT(R)5500 LT5502 LT5503 LT5504 LTC5505 LT5506 LTC5507 LTC5508 LT5511 LT5512 DESCRIPTION RF Power Controller RF Power Controller RF Power Controller SOT-23 RF PA Controller SOT-23 RF PA Controller RF Power Controller for EDGE/TDMA RF Front End 400MHz Quadrature Demodulator with RSSI 1.2GHz to 2.7GHz Direct IQ Modulator and Up Converting Mixer 800MHz to 2.7GHz RF Measuring Receiver 300MHz to 3.5GHz RF Power Detector 500MHz Quadrature IF Demodulator with VGA 100kHz to 1GHz RF Power Detector 300MHz to 7GHz RF Power Detector High Signal Level Up Converting Mixer High Signal Level Down Converting Mixer COMMENTS Multiband GSM/DCS/GPRS Mobile Phones Multiband GSM/DCS/GPRS Mobile Phones Multiband GSM/DCS/GPRS Mobile Phones Multiband GSM/DCS/GPRS Phones, 45dB Dynamic Range, 450kHz Loop BW Multiband GSM/DCS/GPRS Phones, 45dB Dynamic Range, 250kHz Loop BW Multiband GSM/GPRS/EDGE Mobile Phones Dual LNA gain Setting +13.5dB/-14dB at 2.5GHz, Double-Balanced Mixer, 1.8V VSUPPLY 5.25V 1.8V to 5.25V Supply, 70MHz to 400MHz IF, 84dB Limiting Gain, 90dB RSSI Range 1.8V to 5.25V Supply, Four-Step RF Power Control, 120MHz Modulation Bandwidth 80dB Dynamic Range, Temperature Compensated, 2.7V to 5.5V Supply >40dB Dynamic Range, Temperature Compensated, 2.7V to 6V Supply 1.8V to 5.25V Supply, 40MHz to 500MHz IF, -4dB to 57dB Linear Power Gain 48dB Dynamic Range, Temperature Compensated, 2.7V to 6V Supply SC70 Package RF Output to 3GHz, 17dBm IIP3, Integrated LO Buffer DC-3GHz, 20dBm IIP3, Integrated LO Buffer RF Power Controllers 5509f 8 Linear Technology Corporation 1630 McCarthy Blvd., Milpitas, CA 95035-7417 (408) 432-1900 q FAX: (408) 434-0507 q LT/TP 0203 2K * PRINTED IN USA www.linear.com (c) LINEAR TECHNOLOGY CORPORATION 2003 |
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