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APM2007
N-Channel Enhancement Mode MOSFET
Features
*
20V/30A , RDS(ON)=6m(typ.) @ VGS=10V RDS(ON)=8m(typ.) @ VGS=4.5V RDS(ON)=16m(typ.) @ VGS=2.5V
Pin Description
* * *
Super High Dense Cell Design for Extremely Low RDS(ON) Reliable and Rugged TO-252 Package
1
2
3
G
D
S
Top View of TO-252
D
Applications
*
Power Management in Computer, Portable Equipment and Battery Powered Systems.
G
Ordering and Marking Information
APM2007N
Handling Code Temp. Range Package Code
S
N-Channel MOSFET
Package Code U : TO-252 Operation Junction Temp. Range C :-55 to 150 C Handling Code TR : Tape & Reel
APM2007N U :
APM2007N XXXXX
XXXXX - Date Code
Absolute Maximum Ratings
Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Parameter
(TA = 25C unless otherwise noted)
Rating 20 16 V Unit
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright ANPEC Electronics Corp. Rev. A.1 - Nov., 2002 1 www.anpec.com.tw
APM2007
Absolute Maximum Ratings (Cont.)
Symbol I
* D
(TA = 25C unless otherwise noted)
Rating 30 70 A Unit
Parameter Maximum Drain Current - Continuous Maximum Drain Current - Pulsed TA=25C Maximum Power Dissipation Maximum Junction Temperature Storage Temperature Range Thermal Resistance - Junction to Ambient TA=100C
IDM PD TJ TSTG RjA
50 W 10 150 -55 to 150 50 C C C/W
* Surface Mounted on FR4 Board, t 10 sec.
Electrical Characteristics
Symbol Static BV D SS IDSS V GS(th) IGSS R DS(ON) V SD a
b a
(TA = 25C unless otherwise noted)
APM 2007N Min. Typ. Max.
Param eter
Test Condition
Unit
Drain-Source Breakdown Voltage Zero G ate Voltage Drain Current Gate Threshold Voltage Gate Leakage Current Drain-Source On-state Resistance Diode Forward Voltage
V GS =0V , ID S =250A V DS =18V , V GS =0V V DS =V G S , ID S =250A V GS =16V , V DS =0V V GS =10V , IDS =30A V GS =4.5V , IDS =20A V GS =2.5V , IDS =15A I SD =4A , V G S =0V V DS =10V , IDS = 5A V GS =4.5V ,
20 1 1 1.5 6 8 16 0.7 28 5.2 7.6 17 2 100 7.5 9.5 18 1.3 35
V A V nA m V
Dynam ic Qg Total G ate Charge Q gs Gate-Source Charge Q gd td(ON) Tr td(OFF) Tf C iss C oss C rss Gate-Drain Charge Turn-on Delay Time Turn-on Rise Tim e Turn-off Delay Tim e Turn-off Fall Time Input Capacitance
nC 32 29 56 32 pF ns
V DD =10V , ID S =1A , V GEN =4.5V , R G =0.2 V GS =0V
15 45 25 2293 570 390
Output Capacitance V DS =15V Reverse Transfer Capacitance Frequency=1.0MHz
Notes
a b
: Pulse test ; pulse width 300s, duty cycle 2% : Guaranteed by design, not subject to production testing
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Copyright ANPEC Electronics Corp. Rev. A.1 - Nov., 2002
APM2007
Typical Characteristics
Output Characteristics
30
VGS=3,4,5,6,7,8,9,10V
Transfer Characteristics
30 25
25
ID-Drain Current (A)
ID-Drain Current (A)
20 15 10 5 0
20 15 10
TJ=125C
VGS=2V
5 0 0.0
TJ=25C
TJ=-55C
0
2
4
6
8
10
0.5
1.0
1.5
2.0
2.5
3.0
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Threshold Voltage vs. Junction Temperature
1.50
IDS=250uA
On-Resistance vs. Drain Current
16
VGS(th)-Threshold Voltage (V) (Normalized)
1.25 1.00 0.75 0.50 0.25 0.00 -50
RDS(ON)-On-Resistance ()
14 12 10 8 6 4 2
VGS=4.5V VGS=10V
-25
0
25
50
75
100 125 150
0
0
10
20
30
40
50
60
70
Tj - Junction Temperature (C)
ID - Drain Current (A)
Copyright ANPEC Electronics Corp. Rev. A.1 - Nov., 2002
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APM2007
Typical Characteristics
On-Resistance vs. Gate-to-Source Voltage
0.020 0.018
ID=30A
On-Resistance vs. Junction Temperature
1.8
VGS=4.5V ID=20A
RDS(ON)-On-Resistance ()
0.016 0.014 0.012 0.010 0.008 0.006 0.004 0.002 0.000 1 2 3 4 5 6 7 8 9 10
RDS(ON)-On-Resistance () (Normalized)
1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 -50
-25
0
25
50
75
100 125 150
VGS - Gate-to-Source Voltage (V)
TJ - Junction Temperature (C)
Gate Charge
5
VDS=10V ID=5A
Capacitance
4000 3500
Frequency=1MHz
VGS-Gate-Source Voltage (V)
4
Capacitance (pF)
3000 2500 2000 1500 1000 500
Coss Crss Ciss
3
2
1
0
0
5
10
15
20
25
30
35
0
0
5
10
15
20
QG - Gate Charge (nC)
VDS - Drain-to-Source Voltage (V)
Copyright ANPEC Electronics Corp. Rev. A.1 - Nov., 2002
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APM2007
Typical Characteristics
Source-Drain Diode Forward Voltage
30 10
250
Single Pulse Power
IS-Source Current (A)
200
Power (W)
1.0 1.2
150
1
TJ=150C
TJ=25C
100
0.1
50
0.0
0.2
0.4
0.6
0.8
0 1E-3
0.01
0.1
1
10
100
1000
VSD -Source-to-Drain Voltage (V)
Time (sec)
Normalized Thermal Transient Impedence, Junction to Ambient
Normalized Effective Transient Thermal Impedance
1
Duty Cycle=0.5
D=0.2 D=0.1 D=0.05
0.1
D=0.02 D=0.01 SINGLE PULSE
1.Duty Cycle, D=t1/t2 2.Per Unit Base=RthJA=50C/W 3.TJM-TA=PDMZthJA
0.01 1E-4
1E-3
0.01
0.1
1
10
100
1000
Square Wave Pulse Duration (sec)
Copyright ANPEC Electronics Corp. Rev. A.1 - Nov., 2002
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APM2007
Packaging Information
TO-252( Reference JEDEC Registration TO-252)
E b2 L2 A C1
D H L1 L b e1 C A1
Dim A A1 b b2 C C1 D E e1 H L L1 L2
Mi ll im et er s Min . 2. 1 8 0. 8 9 0. 5 08 5. 2 07 0. 4 6 0. 4 6 5. 3 34 6. 3 5 3. 9 6 9. 3 98 0. 5 1 0. 6 4 0. 8 9 1. 0 2 2. 0 32
6
Inc he s Ma x . 2. 3 9 1. 2 7 0. 8 9 5. 4 61 0. 5 8 0. 5 8 6. 2 2 6. 7 3 5. 1 8 10 . 41 Min . 0. 0 86 0. 0 35 0. 0 20 0. 2 05 0. 0 18 0. 0 18 0. 2 10 0. 2 50 0. 1 56 0. 3 70 0. 0 20 0. 0 25 0. 0 35 0. 0 40 0. 0 80
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Ma x . 0. 0 94 0. 0 50 0. 0 35 0. 2 15 0. 0 23 0. 0 23 0. 2 45 0. 2 65 0. 2 04 0. 4 10
Copyright ANPEC Electronics Corp. Rev. A.1 - Nov., 2002
APM2007
Physical Specifications
Terminal Material Lead Solderability Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb) Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.
Reflow Condition
(IR/Convection or VPR Reflow)
temperature
Peak temperature
183C Pre-heat temperature
Time
Classification Reflow Profiles
Convection or IR/ Convection Average ramp-up rate(183C to Peak) 3C/second max. 120 seconds max Preheat temperature 125 25C) 60 - 150 seconds Temperature maintained above 183C Time within 5C of actual peak temperature 10 -20 seconds Peak temperature range 220 +5/-0C or 235 +5/-0C Ramp-down rate 6 C /second max. 6 minutes max. Time 25C to peak temperature VPR 10 C /second max.
60 seconds 215-219C or 235 +5/-0C 10 C /second max.
Package Reflow Conditions
pkg. thickness 2.5mm and all bgas Convection 220 +5/-0 C VPR 215-219 C IR/Convection 220 +5/-0 C pkg. thickness < 2.5mm and pkg. volume 350 mm pkg. thickness < 2.5mm and pkg. volume < 350mm Convection 235 +5/-0 C VPR 235 +5/-0 C IR/Convection 235 +5/-0 C
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Copyright ANPEC Electronics Corp. Rev. A.1 - Nov., 2002
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APM2007
Reliability test program
Test item SOLDERABILITY HOLT PCT TST Method MIL-STD-883D-2003 MIL-STD 883D-1005.7 JESD-22-B, A102 MIL-STD 883D-1011.9 Description 245C,5 SEC 1000 Hrs Bias @ 125C 168 Hrs, 100% RH, 121C -65C ~ 150C, 200 Cycles
Carrier Tape & Reel Dimensions
E Po P P1 D
t
F W
Bo
Ao
D1 T2
Ko
J C A B
T1
Application
A 330 3
B 100 2 D 1.5 +0.1
C 13 0. 5 D1
J 2 0.5 Po
T1 T2 16.4 + 0.3 2.5 0.5 -0.2 P1 2.0 0.1 Ao
W 16+ 0.3 - 0.1 Bo
P 8 0.1 Ko 2.5 0.1
E 1.75 0.1 t 0.30.05
TO-252
F 7.5 0.1
1.5 0.25 4.0 0.1
6.8 0.1 10.4 0.1
Copyright ANPEC Electronics Corp. Rev. A.1 - Nov., 2002
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APM2007
Cover Tape Dimensions
Application TO- 252 Carrier Width 16 Cover Tape Width 13.3 Devices Per Reel 2500
Customer Service
Anpec Electronics Corp. Head Office : 5F, No. 2 Li-Hsin Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369
Copyright ANPEC Electronics Corp. Rev. A.1 - Nov., 2002
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