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| NPN SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 1 MARCH 94 FEATURES * 100 Volt VCEO * Gain of 20 at IC = 0.5 Amp * Ptot=1 Watt 2N6716 2N6717 2N6718 C B E ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb= 25C SYMBOL 2N6716 VCBO VCEO VEBO ICM IC Ptot 60 60 2N6717 80 80 5 2 1 1 E-Line TO92 Compatible 2N6718 100 100 UNIT V V V A A W C Operating and Storage Temperature Range Tj:Tstg -55 to +200 ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio Transition Frequency Collector Base Capacitance SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO VCE(sat) VBE(on) hFE fT CCB 80 50 20 50 2N6716 60 60 5 1 1 0.5 0.35 1.2 250 500 30 80 50 20 50 2N6717 80 80 5 1 1 0.5 0.35 1.2 250 500 30 80 50 20 50 2N6718 100 100 5 UNIT CONDITIONS. V V V A A A A MIN. MAX MIN. MAX MIN. MAX IC=0.1mA, IE=0 IC=1mA, IB=0* IE=1mA, IC=0 VCB=60V, IE=0 VCB=80V, IE=0 VCB=100V, IE=0 VEB=5V, IC=0 IC=250mA, IB=10mA* IC=250mA,IB=25mA* IC=250mA, VCE=1V* IC=50mA, VCE=1V* IC=250mA, VCE=1V* IC=500mA, VCE=1V* MHz IC=50mA, VCE=10V pF VCE=10V, f=1MHz 1 1 0.5 0.35 1.2 250 500 30 V V *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% 3-6 |
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