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| MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N5684/D High-Current Complementary Silicon Power Transistors . . . designed for use in high-power amplifier and switching circuit applications. * High Current Capability -- IC Continuous = 50 Amperes. * DC Current Gain -- hFE = 15 - 60 @ IC = 25 Adc * Low Collector-Emitter Saturation Voltage -- VCE(sat) = 1.0 Vdc (Max) @ IC = 25 Adc MAXIMUM RATINGS (1) Rating 2N5684 2N5685 2N5686* *Motorola Preferred Device PNP NPN PD, POWER DISSIPATION (WATTS) IIIIIIIIIIIIIIIIIIIIIII I I I II I I I IIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I I III I I I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII I II II I IIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIII II I I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I I I III I I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII III I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIII III I I IIIIIIIIIIIIIIIIIIIIIII III I I IIIIIIIIIIIIIIIIIIIIIII III I IIIIIIIIIIIIIIIIIIIIIII III I IIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII III I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIII III I IIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIII III II IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIII III II IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIII Symbol VCEO VCB VEB IC IB 2N5685 60 60 2N5684 2N5686 80 80 Unit Vdc Vdc Vdc Adc Adc Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage 5.0 50 15 Collector Current -- Continuous Base Current Total Device Dissipation @ TC = 25_C Derate above 25_C Operating and Storage Junction Temperature Range PD 300 1.715 Watts W/_C TJ, Tstg - 65 to + 200 50 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 - 80 VOLTS 300 WATTS _C CASE 197A-05 TO-204AE THERMAL CHARACTERISTICS (1) Characteristic Symbol JC Max Unit Thermal Resistance, Junction to Case 0.584 _C/W (1) Indicates JEDEC Registered Data. 300 250 200 150 100 50 0 0 20 40 60 80 100 120 140 TEMPERATURE (C) 160 180 200 Figure 1. Power Derating Safe Area Curves are indicated by Figure 5. All limits are applicable and must be observed. Preferred devices are Motorola recommended choices for future use and best overall value. REV 7 (c) Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data 1 IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII III I I I IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII III I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I IIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII 2N5684 2N5685 2N5686 * Indicates JEDEC Registered Data. Note 1: Pulse Test: Pulse Width 300 s, Duty Cycle *ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) DYNAMIC CHARACTERISTICS ON CHARACTERISTICS OFF CHARACTERISTICS 2 tr 20 ns Current-Gain -- Bandwidth Product (IC = 5.0 Adc, VCE = 10 Vdc, f = 1.0 MHz) Base-Emitter On Voltage (Note 1) (IC = 25 Adc, VCE = 2.0 Vdc) Base-Emitter Saturation Voltage (Note 1) (IC = 25 Adc, IB = 2.5 Adc) Collector-Emitter Saturation Voltage (Note 1) (IC = 25 Adc, IB = 2.5 Adc) (IC = 50 Adc, IB = 10 Adc) DC Current Gain (Note 1) (IC = 25 Adc, VCE = 2.0 Vdc) (IC = 50 Adc, VCE = 5.0 Vdc) Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) Collector Cutoff Current (VCB = 60 Vdc, IE = 0) (VCB = 80 Vdc, IE = 0) Collector Cutoff Current (VCE = 60 Vdc, VEB(off) = 1.5 Vdc) (VCE = 80 Vdc, VEB(off) = 1.5 Vdc) (VCE = 60 Vdc, VEB(off) = 1.5 Vdc, TC = 150_C) (VCE = 80 Vdc, VEB(off) = 1.5 Vdc, TC = 150_C) Collector-Emitter Sustaining Voltage (Note 1) (IC = 0.2 Adc, IB = 0) Collector Cutoff Current (VCE = 30 Vdc, IB = 0) (VCE = 40 Vdc, IB = 0) -12 V 0 + 2.0 V 0 DUTY CYCLE 2.0% DUTY CYCLE 2.0% Output Capacitance 2N5684 (VCB = 10 Vdc, IE = 0, f = 0.1 MHz) 2N5685, 2N5686 Small-Signal Current Gain (IC = 10 Adc, VCE = 5.0 Vdc, f = 1.0 kHz) Figure 2. Switching Time Test Circuit FOR CURVES OF FIGURES 3 & 6, RB & RL ARE VARIED. INPUT LEVELS ARE APPROXIMATELY AS SHOWN. FOR NPN CIRCUITS, REVERSE ALL POLARITIES. -12 V tr 20 ns 10 to 100 s t, TIME ( s) 10 to 100 s +10 V v Characteristic RB RB VBB + 4.0 V VCC RL VCC RL v 2.0%. - 30 V TO SCOPE tr 20 ns TO SCOPE tr 20 ns - 30 V 2N5685 2N5684, 2N5686 2N5685 2N5684, 2N5686 2N5685 2N5684, 2N5686 2N5685 2N5684, 2N5686 2N5685 2N5684, 2N5686 0.01 0.5 0.7 1.0 0.02 0.1 0.07 0.05 0.03 0.2 1.0 0.7 0.5 0.3 Motorola Bipolar Power Transistor Device Data TJ = 25C IC/IB = 10 VCC = 30 V tr VCEO(sus) VCE(sat) VBE(sat) VBE(on) Symbol 20 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (AMP) ICBO ICEO IEBO ICEX fT Cob hFE hfe td Min 2.0 15 5.0 15 60 80 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- 2000 1200 Max 2.0 2.0 1.0 5.0 5.0 2.0 2.0 2.0 2.0 10 10 1.0 1.0 60 -- -- -- -- -- Figure 3. Turn-On Time 2N5684 (PNP) 2N5685, 2N5686 (NPN) 30 MHz Unit Vdc Vdc Vdc Vdc pF -- mAdc mAdc mAdc mAdc 50 2N5684 2N5685 2N5686 r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1.0 0.7 0.5 0.3 0.2 0.1 0.1 0.07 0.05 0.03 0.02 0.01 0.02 SINGLE PULSE 0.05 0.02 0.01 D = 0.5 0.2 P(pk) JC(t) = r(t) JC JC = 0.584C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN t1 READ TIME AT t1 t2 TJ(pk) - TC = P(pk) JC(t) DUTY CYCLE, D = t1/t2 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 t, TIME (ms) 20 50 100 200 500 1000 2000 Figure 4. Thermal Response 100 IC, COLLECTOR CURRENT (AMP) 50 20 10 5.0 2.0 1.0 0.5 0.2 0.1 1.0 dc 500 s 5.0 ms 1.0 ms 100 s TJ = 200C SECOND BREAKDOWN LIMITED BONDING WIRE LIMITED THERMALLY LIMITED @ TC = 25C (SINGLE PULSE) CURVES APPLY BELOW RATED VCEO 2N5683, 2N5685 2N5684, 2N5686 2.0 3.0 20 30 50 70 5.0 7.0 10 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 100 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate I C - V CE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 5 is based on T J(pk) = 200_C; T C is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided T J(pk) 200_C. T J(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. v Figure 5. Active-Region Safe Operating Area 4.0 3.0 2.0 t, TIME ( s) ts 1.0 0.8 0.6 0.4 0.3 0.2 0.5 0.7 1.0 5.0 7.0 10 2.0 3.0 20 IC, COLLECTOR CURRENT (AMP) 30 50 tf 2N5684 (PNP) 2N5685, 2N5686 (NPN) TJ = 25C IB1 = IB2 IC/IB = 10 VCE = 30 V 5000 TJ = 25C 3000 C, CAPACITANCE (pF) 2000 Cib Cib 2N5684 (PNP) 2N5685, 2N5686 (NPN) 0.2 Cob 1000 700 500 0.1 Cob 50 100 0.5 1.0 2.0 5.0 10 20 VR, REVERSE VOLTAGE (VOLTS) Figure 6. Turn-Off Time Figure 7. Capacitance Motorola Bipolar Power Transistor Device Data 3 2N5684 2N5685 2N5686 PNP 2N5684 500 300 200 hFE , DC CURRENT GAIN 100 70 50 30 20 10 7.0 5.0 0.5 0.7 1.0 TJ = +150C + 25C VCE = 2.0 V VCE = 10 V hFE , DC CURRENT GAIN 500 300 200 100 70 50 30 20 10 7.0 5.0 0.5 0.7 1.0 - 55C TJ = +150C + 25C VCE = 2.0 V VCE = 10 V NPN 2N5685, 2N5686 - 55C 2.0 3.0 5.0 7.0 10 20 IC, COLLECTOR CURRENT (AMP) 30 50 2.0 3.0 5.0 7.0 10 20 IC, COLLECTOR CURRENT (AMP) 30 50 Figure 8. DC Current Gain VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 2.0 TJ = 25C 1.6 IC = 10 A 1.2 25 A 40 A VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 2.0 TJ = 25C 1.6 IC = 10 A 25 A 40 A 1.2 0.8 0.8 0.4 0.4 0 0.1 0.2 1.0 2.0 3.0 0.5 IB, BASE CURRENT (AMP) 5.0 10 0 0.1 0.2 0.3 1.0 2.0 3.0 0.5 IB, BASE CURRENT (AMP) 5.0 10 Figure 9. Collector Saturation Region 2.5 TJ = 25C 2.0 V, VOLTAGE (VOLTS) V, VOLTAGE (VOLTS) 2.0 TJ = 25C 1.6 1.5 VBE(sat) @ IC/IB = 10 VBE @ VCE = 2.0 V 0.5 VCE(sat) @ IC/IB = 10 0 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 1.2 1.0 0.8 VBE(sat) @ IC/IB = 10 VBE @ VCE = 2.0 V VCE(sat) @ IC/IB = 10 0.4 0 0.5 0.7 1.0 2.0 3.0 5.0 10 20 30 50 IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP) Figure 10. "On" Voltages 4 Motorola Bipolar Power Transistor Device Data 2N5684 2N5685 2N5686 PACKAGE DIMENSIONS A N C -T- E D U V 2 2 PL SEATING PLANE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. K M 0.30 (0.012) L G 1 TQ M Y M -Y- H B -Q- 0.25 (0.010) M TY M DIM A B C D E G H K L N Q U V INCHES MIN MAX 1.530 REF 0.990 1.050 0.250 0.335 0.057 0.063 0.060 0.070 0.430 BSC 0.215 BSC 0.440 0.480 0.665 BSC 0.760 0.830 0.151 0.165 1.187 BSC 0.131 0.188 MILLIMETERS MIN MAX 38.86 REF 25.15 26.67 6.35 8.51 1.45 1.60 1.53 1.77 10.92 BSC 5.46 BSC 11.18 12.19 16.89 BSC 19.31 21.08 3.84 4.19 30.15 BSC 3.33 4.77 STYLE 1: PIN 1. BASE 2. EMITTER CASE: COLLECTOR CASE 197A-05 TO-204AE ISSUE J Motorola Bipolar Power Transistor Device Data 5 2N5684 2N5685 2N5686 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters can and do vary in different applications. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. How to reach us: USA / EUROPE: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. 1-800-441-2447 MFAX: RMFAX0@email.sps.mot.com - TOUCHTONE (602) 244-6609 INTERNET: http://Design-NET.com JAPAN: Nippon Motorola Ltd.; Tatsumi-SPD-JLDC, Toshikatsu Otsuki, 6F Seibu-Butsuryu-Center, 3-14-2 Tatsumi Koto-Ku, Tokyo 135, Japan. 03-3521-8315 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298 6 Motorola Bipolar Power Transistor Device Data *2N5684/D* 2N5684/D |
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