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| DSEP 8-06A HiPerFREDTM Epitaxial Diode with soft recovery IFAV = 10 A VRRM = 600 V trr = 35 ns A C VRSM V 600 VRRM V Type TO-220 AC C 600 DSEP 8-06A A C (TAB) A = Anode, C = Cathode, TAB = Cathode Symbol IFRMS IFAVM IFSM EAS IAR TVJ TVJM Tstg Ptot Md Weight Conditions TC = 135C; rectangular, d = 0.5 TVJ = 45C; tp = 10 ms (50 Hz), sine TVJ = 25C; non-repetitive IAS = 0.9 A; L = 180 H VA = 1.5*VR typ.; f = 10 kHz; repetitive Maximum Ratings 35 10 50 0.1 0.1 -55...+175 175 -55...+150 A A Features A q mJ A C C C W Nm g q q q q q q International standard package Planar passivated chips Very short recovery time Extremely low switching losses Low IRM-values Soft recovery behaviour Epoxy meets UL 94V-0 TC = 25C mounting torque typical 60 0.4...0.6 2 Applications q q q Symbol IR x Conditions TVJ = 25C VR = VRRM TVJ = 150C VR = VRRM IF = 10 A; TVJ = 150C TVJ = 25C Characteristic Values typ. max. 60 0.25 1.42 2.10 2.5 0.5 mA mA V V K/W K/W ns q q q q q VF y RthJC RthCH trr IRM Antiparallel diode for high frequency switching devices Antisaturation diode Snubber diode Free wheeling diode in converters and motor control circuits Rectifiers in switch mode power supplies (SMPS) Inductive heating Uninterruptible power supplies (UPS) Ultrasonic cleaners and welders Advantages q IF = 1 A; -di/dt = 50 A/ms; VR = 30 V; TVJ = 25C VR = 100 V; IF = 12 A; -diF/dt = 100 A/ms TVJ = 100C 35 4.4 A q q Avalanche voltage rated for reliable operation Soft reverse recovery for low EMI/RFI Low IRM reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch Pulse test: x Pulse Width = 5 ms, Duty Cycle < 2.0 % y Pulse Width = 300 ms, Duty Cycle < 2.0 % Data according to IEC 60747 and per diode unless otherwise specified Dimensions see outlines.pdf (c) 2000 IXYS All rights reserved 1-2 008 IXYS reserves the right to change limits, test conditions and dimensions. DSEP 8-06A 30 A 25 IF 20 15 10 TVJ=150C TVJ=100C TVJ= 25C 1.4 T = 100C nC VJ V = 300V 1.2 R Qr 1.0 0.8 0.6 0.4 IF= 20A IF= 10A IF= 5A 40 TVJ= 100C A VR = 300V IRM 30 IF= 20A IF= 10A IF= 5A 20 10 5 0 0.0 0.2 0.0 100 0 A/ms 1000 -diF/dt 0 200 400 600 A/ms 1000 800 -diF/dt 0.5 1.0 1.5 VF 2.0 V 2.5 Fig. 1 Forward current IF versus VF Fig. 2 Reverse recovery charge Qr versus -diF/dt 120 ns 110 TVJ= 100C VR = 300V Fig. 3 Peak reverse current IRM versus -diF/dt 20 V VFR 15 V FR 2.0 1.2 s 0.9 tfr 1.5 Kf 1.0 I RM trr 100 IF= 20A IF= 10A IF= 5A tfr 90 10 0.6 0.5 Qr 80 5 TVJ= 100C IF = 10A 0.3 70 0.0 0 40 80 120 C 160 TVJ 0 200 400 600 -diF/dt 800 A/ms 1000 0 0 200 400 0.0 600 A/ms 1000 800 diF/dt Fig. 4 Dynamic parameters Qr, IRM versus TVJ 10 K/W 1 ZthJC 0.1 Fig. 5 Recovery time trr versus -diF/dt Fig. 6 Peak forward voltage VFR and tfr versus diF/dt Constants for ZthJC calculation: i 1 2 3 Rthi (K/W) 1.449 0.5578 0.4931 ti (s) 0.0052 0.0003 0.0169 0.01 0.001 0.00001 DSEP 8-06A/DSEC16-06A 0.0001 0.001 0.01 0.1 t s 1 Fig. 7 Transient thermal resistance junction to case 914 NOTE: Fig. 2 to Fig. 6 shows typical values (c) 2000 IXYS All rights reserved 2-2 |
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