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| PHOTODIODE PIN photodiode amplifier C4890 Wide bandwidth amplifier (1.5 GHz, 20 dB) C4890 wide-band amplifier, when connected to a high-speed PIN photodiode (S5791, S5972, S5973, etc.) converts optical signals at a maximum of 1.5 GHz into voltage outputs with exceptionally low distortion and 20 dB gain. C4890 can also be combined with other types of PIN photodiodes and APDs (avalanche photodiodes) to serve as a high-frequency amplifier for optical measurements in a wide range of fields including industry and research applications. Features Applications l Wide bandwidth, high gain, flat gain spectrum l Flat, low group delay characteristics and low noise l Input/output impedance: 50 l Small size, light weight, low price l Single power supply operation (+12 V) l High frequency amplifier for measurement l PIN photodiode evaluation s Absolute maximum ratings Parameter Supply voltage Input voltage Operating temperature Storage temperature Condition Continuation RF input DC Value +13.5 +15 +1.25 0 to +60 -10 to +70 Unit V dBm V C C s Electrical characteristics (Ta=25 C, Vcc=12 V, Input/output is terminated with 50 load.) Parameter High band Cut-off frequency (-3 dB) Low band Gain Gain deviation within bandwidth Group delay time Input VSWR Output 1 dB compression point Rise time Noise figure Current consumption Condition Min. 1.0 18 Typ. 1.5 5 20 1.0 700 1.1 1.5 7 240 8 45 f=1.0 GHz f=10 MHz to 1.0 GHz f=1.0 GHz Max. 10 - Unit GHz MHz dB dB ps dB dB dBm ps dB mA PIN photodiode amplifier s Gain vs. frequency 30 C4890 s Group delay time vs. frequency 2 20 GROUP DELAY TIME (ns) GAIN (dB) 1 10 0 0 0.5 1.0 1.5 2.0 0 0 0.5 1.0 1.5 2.0 FREQUENCY (GHz) KACCB0038EA FREQUENCY (GHz) KACCB0039EA s Dimensional outline (unit: mm) 7 40 7 WIDEBAND AMPLIFIER C4890 No. Vcc=12V GND WARRANTY REAL DO NOT REMOVE OUT 30 20 11 (2 x) SMA JACK s Application example: High-speed O/E converter module A high-sensitivity O/E converter can be easily configured by using C4890 in conjunction with a high-speed PIN photodiode (S5973, etc). The following is an example when C4890 is used with S5973 to amplify the output signal after receiving an attenuator. Major performance items are shown below. Effective bandwidth: 5 MHz to 1.5 GHz The lower limit is determined by the amplifier (C4890) and the upper limit by the photodiode. Conversion sensitivity (V/W) = 0.5 A/W x 50 x (100 - )/100 x 10 (=850 nm) C4890 gain Attenuator damp rate Attenuator input impedance Photodiode photoelectric sensitivity Detection limit: 4.4 Wrms (=850 nm, BW=1.5 GHz) Depends on the amplifier NF (NF=8 dB Typ.). The above specifications are typical values and not guaranteed. HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: (81) 053-434-3311, Fax: (81) 053-434-5184, http://www.hamamatsu.com U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvagen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 IN MAX 15dBm 30 (4 x) M3 (d-5) 20 KACCA0034EA s Connection example +12 10 k 0.1 +12 PHOTODIODE R1 ATTENUATOR SMA R2 R3 C4890 SMA Vout Resistance value according to the attenuator damp quantity Damp quantity (dB) 0 3 6 10 Damp rate (%) 0 30 50 70 R1, R2 () 0 8.2 16 27 R3 () 50 150 68 36 KPINC0003EB Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. (c)2001 Hamamatsu Photonics K.K. Cat. No. KACC1055E01 Apr. 2001 DN |
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