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| MOTOROLA The RF Line SEMICONDUCTOR TECHNICAL DATA Order this document by MRF555/D NPN Silicon RF Low Power Transistor Designed primarily for wideband large signal predriver stages in the UHF frequency range. * Specified @ 12.5 V, 470 MHz Characteristics @ Pout = 1.5 W Common Emitter Power Gain = 12.5 dB (Typ) Efficiency 60% (Typ) * Cost Effective PowerMacro Package * Electroless Tin Plated Leads for Improved Solderability * Circuit board photomaster available upon request by contacting RF Tactical Marketing in Phoenix, AZ. MRF555 1.5 W, 470 MHz RF LOW POWER TRANSISTOR NPN SILICON MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current -- Continuous Operating Junction Temperature Total Device Dissipation @ TC = 75C (1, 2) Derate above 75C Storage Temperature Range Symbol VCEO VCBO VEBO IC TJ PD Tstg Characteristic Thermal Resistance, Junction to Case Value 16 36 4.0 400 150 3.0 40 - 55 to +150 Unit Vdc Vdc Vdc mAdc C Watts mW/C C CASE 317D-02, STYLE 2 THERMAL CHARACTERISTICS Symbol RJC Max 25 Unit C/W ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (IC = 5.0 mAdc, IB = 0) Collector-Emitter Breakdown Voltage (IC = 5.0 mAdc, VBE = 0) Emitter-Base Breakdown Voltage (IE = 0.1 mAdc, IC = 0) Collector Cutoff Current (VCE = 15 Vdc, VBE = 0, TC = 25C) V(BR)CEO V(BR)CES V(BR)EBO ICES 16 36 4.0 -- -- -- -- -- -- -- -- 0.1 Vdc Vdc Vdc mAdc ON CHARACTERISTICS DC Current Gain (IC = 100 mAdc, VCE = 5.0 Vdc) hFE 50 90 200 -- DYNAMIC CHARACTERISTICS Output Capacitance (VCB = 15 Vdc, IE = 0, f = 1.0 MHz) Cob -- 3.5 5.0 pF NOTES: (continued) 1. TC, Case temperature measured on collector lead immediately adjacent to body of package. 2. The MRF555 PowerMacro must be properly mounted for reliable operation. AN938, "Mounting Techniques in PowerMacro Transistor," discusses methods of mounting and heatsinking. REV 7 (c)MOTOROLA RF DEVICE DATA Motorola, Inc. 1995 MRF555 1 ELECTRICAL CHARACTERISTICS -- continued (TA = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit FUNCTIONAL TESTS (f = 470 MHz) Common-Emitter Power Gain (VCC = 12.5 Vdc, Pout = 1.5 W) Collector Efficiency (VCC = 12.5 Vdc, Pout = 1.5 W) Load Mismatch Stress (VCC = 15.5 Vdc, Pin = 125 mW, VSWR 10:1 all phase angles) Gpe c No Degradation in Output Power 11 50 12.5 60 -- -- dB % L5 + B B C7 L1 L3 RF POWER INPUT L2 Z1 Z2 D.U.T. C6 Z3 L4 C5 RF POWER OUTPUT + C8 C9 VCC - C1 C2 C3 C4 *C1, C3, C6 -- 0.8 - 11 pF Johanson C2 -- 15 pF Clamped Mica, Mini-Underwood C4 -- 36 pF Clamped Mica, Mini-Underwood C5 -- 470 pF Ceramic Chip Capacitor C7 -- 91 pF Clamped Mica, Mini-Underwood C8 -- 68 pF Clamped Mica, Mini-Underwood C9 -- 1.0 F, 25 V Tantalum B -- Bead, Ferroxcube 56-590-65/3B *Fixed tuned for broadband response L1 -- 5 Turns #21 AWG, 5/32 I.D. L2, L3 -- 60 x 125 x 250 Mils Copper Pad on 27 Mil Thick L2, L3 -- Alumina Substrate L4, L5 -- 7 Turns #21 AWG 5/32 I.D. Z1 -- 1.29 x 0.16 Microstrip Z2 -- 0.70 x 0.16 Microstrip Z3 -- 2.18 x 0.16 Microstrip PCB -- 1/16 Glass Teflon, 1 oz. cu. clad, PCB -- double sided, r = 2.5 Figure 1. 400 - 512 MHz Broadband Circuit 20 Pout = 1.5 W VCC = 12.5 Vdc c , COLLECTOR EFFICIENCY % IRL, INPUT RETURN LOSS (dB) Gpe 12 c 8 IRL 65 60 55 16 G pe , POWER GAIN (dB) 4 10 15 20 0 400 425 450 475 f, FREQUENCY (MHz) 500 525 Figure 2. Performance in Broadband Circuit MRF555 2 MOTOROLA RF DEVICE DATA Zin Ohms VCC = 7.5 V f Frequency MHz 400 450 512 VCC = 12.5 V VCC = 7.5 V ZOL* Ohms VCC = 12.5 V Pout 400 MHz = 1.9 W Pout 450 MHz = 1.45 W Pout 512 MHz = 0.9 W 12.2 - j19.7 20.2 - j18.6 23.4 - j23.0 Pin = 100 mW 2.9 - j2.7 2.2 - j0.8 3.5 - j1.2 Pin = 50 mW 1.9 - j3.1 2.6 - j4.0 2.6 - j2.6 Pout 400 MHz = 1.5 W Pout 450 MHz = 1.35 W Pout 512 MHz = 1.05 W 18.0 - j13.4 21.6 = j9.9 20.1 - j1.0 ZOL* = Conjugate of the optimum load impedance into which the device output operates at a given output power, voltage and frequency. Table 1. Zin and ZOL versus Collector Voltage, Input Power and Output Power MOTOROLA RF DEVICE DATA MRF555 3 2.5 VCC = 12.5 Vdc 2.5 VCC = 7.5 Vdc Pout , POWER OUTPUT (W) 2 Pin = 150 mW 100 mW 1 50 mW 0.5 Pout , POWER OUTPUT (W) 2 1.5 7.5 Vdc 1 1.5 0.5 0 0 50 100 Pin, POWER INPUT (mW) 150 200 0 400 425 450 475 f, FREQUENCY (MHz) 500 525 Figure 3. Power Output versus Power Input Figure 4. Power Output versus Frequency 4 VCC = 12.5 Vdc Pout , POWER OUTPUT (W) Pout , POWER OUTPUT (W) 4 Pin = 150 mW f = 400 MHz 3 100 mW 3 Pin = 150 mW 2 100 mW 1 50 mW 2 50 mW 1 0 400 0 425 450 475 f, FREQUENCY (MHz) 500 525 6 8 10 12 VCC, SUPPLY VOLTAGE (Vdc) 14 16 Figure 5. Power Output versus Frequency Figure 6. Power Output versus Supply Voltage 4 4 Pout , POWER OUTPUT (W) Pout , POWER OUTPUT (W) f = 450 MHz 3 Pin = 150 mW 100 mW 2 50 mW 1 3 f = 512 MHz Pin = 150 mW 2 100 mW 50 mW 1 0 6 8 10 12 VCC, SUPPLY VOLTAGE (Vdc) 14 16 0 6 8 10 12 VCC, SUPPLY VOLTAGE (Vdc) 14 16 Figure 7. Power Output versus Supply Voltage Figure 8. Power Output versus Supply Voltage MRF555 4 MOTOROLA RF DEVICE DATA PACKAGE DIMENSIONS F R 1 H 4 3 2 A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. LEAD DIMENSIONS UNCONTROLLED WITHIN DIMENSION N AND R. DIM A C D F H J K N R T INCHES MIN MAX 0.175 0.205 0.075 0.100 0.033 0.039 0.097 0.104 0.348 0.383 0.008 0.012 0.285 0.320 --- 0.065 --- 0.128 0.025 0.040 MILLIMETERS MIN MAX 4.45 5.20 1.91 2.54 0.84 0.99 2.46 2.64 8.84 9.72 0.24 0.30 7.24 8.12 --- 1.65 --- 3.25 0.64 1.01 D K N T SEATING PLANE C J STYLE 2: PIN 1. 2. 3. 4. COLLECTOR EMITTER BASE EMITTER CASE 317D-02 ISSUE C MOTOROLA RF DEVICE DATA MRF555 5 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters can and do vary in different applications. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. How to reach us: USA / EUROPE: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. 1-800-441-2447 MFAX: RMFAX0@email.sps.mot.com - TOUCHTONE (602) 244-6609 INTERNET: http://Design-NET.com JAPAN: Nippon Motorola Ltd.; Tatsumi-SPD-JLDC, Toshikatsu Otsuki, 6F Seibu-Butsuryu-Center, 3-14-2 Tatsumi Koto-Ku, Tokyo 135, Japan. 03-3521-8315 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298 MRF555 6 *MRF555/D* MRF555/D MOTOROLA RF DEVICE DATA |
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