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| MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJL21193/D Silicon Power Transistors The MJL21193 and MJL21194 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. * * * * Total Harmonic Distortion Characterized High DC Current Gain - hFE = 25 Min @ IC = 8 Adc Excellent Gain Linearity High SOA: 2.25 A, 80 V, 1 Second MJL21193* NPN MJL21194* *Motorola Preferred Device PNP 16 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 250 VOLTS 200 WATTS CASE 340G-02 TO-3PBL MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector-Emitter Voltage - 1.5 V Collector Current -- Continuous Collector Current -- Peak (1) Base Current - Continuous Total Power Dissipation @ TC = 25C Derate Above 25C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO VCEX IC IB PD TJ, Tstg Value 250 400 5 400 16 30 5 200 1.43 - 65 to +150 Unit Vdc Vdc Vdc Vdc Adc Adc Watts W/C C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol RJC Max 0.7 Unit C/W ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage (IC = 100 mAdc, IB = 0) Collector Cutoff Current (VCE = 200 Vdc, IB = 0) (1) Pulse Test: Pulse Width = 5.0 s, Duty Cycle 10%. Preferred devices are Motorola recommended choices for future use and best overall value. Symbol Min Typical Max Unit VCEO(sus) ICEO 250 -- -- -- -- 100 Vdc Adc (continued) (c) Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data 1 MJL21193 MJL21194 ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic OFF CHARACTERISTICS Emitter Cutoff Current (VCE = 5 Vdc, IC = 0) Collector Cutoff Current (VCE = 250 Vdc, VBE(off) = 1.5 Vdc) SECOND BREAKDOWN Second Breakdown Collector Current with Base Forward Biased (VCE = 50 Vdc, t = 1 s (non-repetitive) (VCE = 80 Vdc, t = 1 s (non-repetitive) ON CHARACTERISTICS DC Current Gain (IC = 8 Adc, VCE = 5 Vdc) (IC = 16 Adc, IB = 5 Adc) Base-Emitter On Voltage (IC = 8 Adc, VCE = 5 Vdc) Collector-Emitter Saturation Voltage (IC = 8 Adc, IB = 0.8 Adc) (IC = 16 Adc, IB = 3.2 Adc) DYNAMIC CHARACTERISTICS Total Harmonic Distortion at the Output VRMS = 28.3 V, f = 1 kHz, PLOAD = 100 WRMS (Matched pair hFE = 50 @ 5 A/5 V) Current Gain Bandwidth Product (IC = 1 Adc, VCE = 10 Vdc, ftest = 1 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, ftest = 1 MHz) (1) Pulse Test: Pulse Width = 300 s, Duty Cycle 2% THD hFE unmatched hFE matched fT Cob -- -- 4 -- 0.8 0.08 -- -- -- -- -- 500 MHz pF % hFE 25 8 VBE(on) VCE(sat) -- -- -- -- 1.4 4 -- -- -- -- 75 -- 2.2 Vdc Vdc IS/b 4.0 2.25 -- -- -- -- Adc IEBO ICEX -- -- -- -- 100 100 Adc Adc Symbol Min Typical Max Unit PNP MJL21193 f T, CURRENT GAIN BANDWIDTH PRODUCT (MHz) 6.5 6.0 5.5 5V 5.0 4.5 4.0 3.5 3.0 0.1 TJ = 25C ftest = 1 MHz 1.0 IC COLLECTOR CURRENT (AMPS) 10 VCE = 10 V f T, CURRENT GAIN BANDWIDTH PRODUCT (MHz) 8.0 7.0 6.0 5.0 4.0 3.0 2.0 1.0 0 0.1 TJ = 25C ftest = 1 MHz NPN MJL21194 10 V VCE = 5 V 1.0 IC COLLECTOR CURRENT (AMPS) 10 Figure 1. Typical Current Gain Bandwidth Product Figure 2. Typical Current Gain Bandwidth Product 2 Motorola Bipolar Power Transistor Device Data MJL21193 MJL21194 TYPICAL CHARACTERISTICS PNP MJL21193 1000 1000 NPN MJL21194 hFE , DC CURRENT GAIN TJ = 100C 100 25C - 25C hFE , DC CURRENT GAIN TJ = 100C 25C 100 - 25C VCE = 20 V 10 0.1 10 0.1 VCE = 20 V 1.0 10 IC COLLECTOR CURRENT (AMPS) 100 1.0 10 IC COLLECTOR CURRENT (AMPS) 100 Figure 3. DC Current Gain, VCE = 20 V Figure 4. DC Current Gain, VCE = 20 V PNP MJL21193 1000 1000 NPN MJL21194 hFE , DC CURRENT GAIN TJ = 100C 25C 100 - 25C hFE , DC CURRENT GAIN TJ = 100C 25C 100 - 25C VCE = 5 V 10 0.1 10 0.1 VCE = 20 V 1.0 10 IC COLLECTOR CURRENT (AMPS) 100 1.0 10 IC COLLECTOR CURRENT (AMPS) 100 Figure 5. DC Current Gain, VCE = 5 V Figure 6. DC Current Gain, VCE = 5 V PNP MJL21193 30 1.5 A I C, COLLECTOR CURRENT (A) 25 20 15 10 5.0 TJ = 25C 0 0 5.0 10 15 20 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 25 0 0 I C, COLLECTOR CURRENT (A) IB = 2 A 35 30 25 NPN MJL21194 IB = 2 A 1.5 A 1A 20 15 10 5.0 TJ = 25C 5.0 10 15 20 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 25 0.5 A 1A 0.5 A Figure 7. Typical Output Characteristics Figure 8. Typical Output Characteristics Motorola Bipolar Power Transistor Device Data 3 MJL21193 MJL21194 TYPICAL CHARACTERISTICS PNP MJL21193 3.0 SATURATION VOLTAGE (VOLTS) 2.5 2.0 1.5 1.0 0.5 VCE(sat) 0 0.1 1.0 10 IC, COLLECTOR CURRENT (AMPS) 100 0 0.1 SATURATION VOLTAGE (VOLTS) TJ = 25C IC/IB = 10 1.4 1.2 1.0 0.8 0.6 0.4 0.2 VBE(sat) TJ = 25C IC/IB = 10 NPN MJL21194 VBE(sat) VCE(sat) 1.0 10 IC, COLLECTOR CURRENT (AMPS) 100 Figure 9. Typical Saturation Voltages Figure 10. Typical Saturation Voltages PNP MJL21193 VBE(on) , BASE-EMITTER VOLTAGE (VOLTS) VBE(on) , BASE-EMITTER VOLTAGE (VOLTS) 10 TJ = 25C 10 TJ = 25C NPN MJL21194 VCE = 20 V (SOLID) 1.0 VCE = 5 V (DASHED) 1.0 VCE = 20 V (SOLID) VCE = 5 V (DASHED) 0.1 0.1 1.0 10 100 0.1 0.1 1.0 10 100 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) Figure 11. Typical Base-Emitter Voltage Figure 12. Typical Base-Emitter Voltage 100 IC, COLLECTOR CURRENT (AMPS) 1 SEC 10 1.0 TC = 25C There are two limitations on the power handling ability of a transistor; average junction temperature and secondary breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 13 is based on TJ(pk) = 200C; TC is variable depending on conditions. At high case temperatures, thermal limitations will reduce the power than can be handled to values less than the limitations imposed by second breakdown. 100 1000 0.1 1.0 10 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 13. Active Region Safe Operating Area 4 Motorola Bipolar Power Transistor Device Data MJL21193 MJL21194 10000 TC = 25C C, CAPACITANCE (pF) Cib C, CAPACITANCE (pF) 10000 TC = 25C Cib 1000 Cob f(test) = 1 MHz) 100 0.1 1.0 10 100 1000 Cob f(test) = 1 MHz) 100 0.1 1.0 10 100 VR, REVERSE VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS) Figure 14. MJL21193 Typical Capacitance Figure 15. MJL21194 Typical Capacitance 1.2 1.1 T , TOTAL HARMONIC HD DISTORTION (%) 1.0 0.9 0.8 0.7 0.6 10 100 1000 FREQUENCY (Hz) 10000 100000 Figure 16. Typical Total Harmonic Distortion +50 V AUDIO PRECISION MODEL ONE PLUS TOTAL HARMONIC DISTORTION ANALYZER 50 DUT 0.5 SOURCE AMPLIFIER 0.5 8.0 DUT -50 V Figure 17. Total Harmonic Distortion Test Circuit Motorola Bipolar Power Transistor Device Data 5 MJL21193 MJL21194 PACKAGE DIMENSIONS 0.25 (0.010) -B- -Q- M TB M -T- C U N A R -Y- P K 1 2 3 E NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. MILLIMETERS MIN MAX 2.8 2.9 19.3 20.3 4.7 5.3 0.93 1.48 1.9 2.1 2.2 2.4 5.45 BSC 2.6 3.0 0.43 0.78 17.6 18.8 11.0 11.4 3.95 4.75 2.2 2.6 3.1 3.5 2.15 2.35 6.1 6.5 2.8 3.2 INCHES MIN MAX 1.102 1.142 0.760 0.800 0.185 0.209 0.037 0.058 0.075 0.083 0.087 0.102 0.215 BSC 0.102 0.118 0.017 0.031 0.693 0.740 0.433 0.449 0.156 0.187 0.087 0.102 0.122 0.137 0.085 0.093 0.240 0.256 0.110 0.125 L F 2 PL G W D 3 PL 0.25 (0.010) M J H YQ S DIM A B C D E F G H J K L N P Q R U W STYLE 2: PIN 1. BASE 2. COLLECTOR 3. EMITTER CASE 340G-02 TO-3PBL ISSUE E Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters can and do vary in different applications. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. How to reach us: USA / EUROPE: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. 1-800-441-2447 MFAX: RMFAX0@email.sps.mot.com - TOUCHTONE (602) 244-6609 INTERNET: http://Design-NET.com JAPAN: Nippon Motorola Ltd.; Tatsumi-SPD-JLDC, Toshikatsu Otsuki, 6F Seibu-Butsuryu-Center, 3-14-2 Tatsumi Koto-Ku, Tokyo 135, Japan. 03-3521-8315 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298 6 Motorola Bipolar Power Transistor Device Data *MJL21193/D* MJL21193/D |
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