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| PD - 9.1410A IRFP044N HEXFET(R) Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS(on) = 0.020 G ID = 53A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole. TO-247AC Absolute Maximum Ratings Parameter ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw Max. 53 37 180 120 0.77 20 230 28 12 5.0 -55 to + 175 300 (1.6mm from case ) 10 lbf*in (1.1N*m) Units A W W/C V mJ A mJ V/ns C Thermal Resistance Parameter RJC RCS RJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Typ. --- 0.24 --- Max. 1.3 --- 40 Units C/W 8/25/97 IRFP044N Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)DSS V(BR)DSS/TJ RDS(on) VGS(th) gfs IDSS I GSS Qg Q gs Q gd t d(on) tr t d(off) tf LD LS Ciss Coss Crss Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. 55 --- --- 2.0 16 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- 0.017 --- --- --- --- --- --- --- --- --- --- 12 80 43 52 5.0 13 1500 450 160 Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, I D = 1mA 0.020 VGS = 10V, ID = 29A 4.0 V VDS = VGS , ID = 250A --- S VDS = 25V, I D = 28A 25 VDS = 55V, VGS = 0V A 250 VDS = 44V, VGS = 0V, TJ = 150C 100 V GS = 20V nA -100 VGS = -20V 61 ID = 28A 13 nC VDS = 44V 24 V GS = 10V, See Fig. 6 and 13 --- VDD = 28V --- I D = 28A ns --- RG = 12 --- RD = 0.98, See Fig. 10 D Between lead, --- 6mm (0.25in.) nH G from package --- and center of die contact S --- VGS = 0V --- pF VDS = 25V --- = 1.0MHz, See Fig. 5 Source-Drain Ratings and Characteristics IS ISM VSD t rr Q rr ton Notes: Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min. Typ. Max. Units Conditions D MOSFET symbol 53 --- --- showing the A G integral reverse --- --- 180 p-n junction diode. S --- --- 1.3 V TJ = 25C, IS = 29A, VGS = 0V --- 72 110 ns TJ = 25C, IF = 28A --- 210 310 C di/dt = -100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) Pulse width 300s; duty cycle 2%. Uses IRFZ46N data and test conditions VDD = 25V, starting TJ = 25C, L = 410H RG = 25, IAS = 28A. (See Figure 12) ISD 28A, di/dt 240A/s, VDD V(BR)DSS, TJ 175C IRFP044N 1000 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTT OM 4.5V TOP 1000 I , D ra in -to -S o u rc e C u rre n t (A ) D I , D ra in -to -S o u rce C u rre n t (A ) D VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTT OM 4.5V TOP 100 100 10 10 4 .5V 4.5 V 1 0.1 1 2 0 s PU LSE W ID TH TC = 2 5C 10 A 1 0.1 1 20 s P UL SE W IDTH TC = 17 5C 10 100 A 100 V D S , D rain-to-S ource V oltage (V ) V D S , Drain-to-Source V oltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 2.5 R D S (o n ) , D ra in -to -S o u rc e O n R e si sta n ce (N o rm a li ze d ) I D = 46 A I D , D rain -to- S ou rce C ur ren t (A ) 2.0 100 TJ = 2 5 C TJ = 1 7 5 C 1.5 1.0 10 0.5 1 4 5 6 7 V DS = 2 5 V 2 0 s P U L SE W ID TH 8 9 10 A 0.0 -60 -40 -20 0 20 40 60 80 V G S = 10 V 100 120 140 160 180 A V G S , Ga te-to-S o urce V oltage (V ) T J , Junction T emperature (C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature IRFP044N 2800 20 2400 C , C a p a c ita n c e (p F ) 2000 C is s 1600 C os s 1200 V G S , G a te -to -S o u rce V o lta g e (V ) V GS C is s C rs s C o ss = 0 V, f = 1M H z = C gs + C gd , Cds SH O RTE D = C gd = C ds + C g d I D = 28 A V D S = 44 V V D S = 28 V 16 12 8 800 C rs s 400 4 0 1 10 100 A 0 0 10 20 30 FO R TEST C IRC U IT SEE FIG UR E 13 40 50 60 A V D S , Drain-to-Source V oltage (V) Q G , T otal G ate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000 1000 I S D , R everse D rain C urrent (A ) O P ER A TION IN TH IS A R EA L IM ITE D B Y R D S (o n) I D , D rain Current (A ) 100 100 10 s T J = 1 75 C T J = 25 C 10 10 0 s 10 1m s 1 0.4 0.8 1.2 1.6 VG S = 0 V 2.0 A 1 1 T C = 25 C T J = 17 5 C S in g le Pu lse 10 10 m s A 100 2.4 V S D , S ource-to-D rain Voltage (V ) V D S , D rain-to-Source V oltage (V ) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area IRFP044N VDS 60 RD VGS 50 D.U.T. + RG -VDD I D , Drain Current (A) 40 10V Pulse Width 1 s Duty Factor 0.1 % 30 Fig 10a. Switching Time Test Circuit 20 VDS 90% 10 0 25 50 75 100 125 150 175 T C , Case Temperature ( C) 10% VGS td(on) tr t d(off) tf Fig 9. Maximum Drain Current Vs. Case Temperature 10 Fig 10b. Switching Time Waveforms Thermal Response (Z thJC ) 1 D = 0.50 0.20 0.10 0.1 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = t1 / t 2 2. Peak T J = P DM x Z thJC + T C PDM t1 t2 0.01 0.00001 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case IRFP044N L E A S , S in g le P u ls e A va la n c h e E n e rg y (m J) VDS D.U.T. RG + V - DD 10 V 500 TO P 400 BO TTOM ID 1 1A 20A 28 A IAS tp 0.01 300 Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp VDD VDS 200 100 0 V D D = 2 5V 25 50 75 100 125 150 A 175 Starting TJ , Junction T emperature (C) IAS Fig 12c. Maximum Avalanche Energy Vs. Drain Current Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50K QG 12V .2F .3F 10 V QGS VG QGD VGS 3mA D.U.T. + V - DS IG ID Charge Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit IRFP044N Peak Diode Recovery dv/dt Test Circuit D.U.T + + Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer - + RG * * * * dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test + VDD Driver Gate Drive P.W. Period D= P.W. Period VGS=10V * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt VDD Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple 5% ISD * VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFETS IRFP044N Package Outline TO-247AC Outline Dimensions are shown in millimeters (inches) 1 5 .90 (.6 2 6) 1 5 .30 (.6 0 2) -B3 .6 5 (.1 4 3 ) 3 .5 5 (.1 4 0 ) 0 .25 (.0 1 0) M -A5 .5 0 (.2 1 7 ) 2 0 .3 0 (.80 0 ) 1 9 .7 0 (.77 5 ) 1 2 3 -C 1 4.8 0 (.5 8 3 ) 1 4.2 0 (.5 5 9 ) 4 .3 0 (.1 7 0 ) 3 .7 0 (.1 4 5 ) LEAD AS SIGN MENT S 1 2 3 4 G ATE DRAIN SO URCE DRAIN -DDBM 5 .3 0 (.2 0 9 ) 4 .7 0 (.1 8 5 ) 2 .5 0 (.0 8 9) 1 .5 0 (.0 5 9) 4 2X 5. 50 (.2 17 ) 4. 50 (.1 77 ) NOT ES : 1 DIME NSIO NING & TO LERAN CING PE R AN SI Y 14.5M, 1982. 2 CO NTRO LLING DIMENS IO N : IN CH . 3 CO NF ORM S T O JEDE C O UTLINE T O-247-A C. 2 .4 0 (.09 4 ) 2 .0 0 (.07 9 ) 2X 5 .45 (.2 1 5) 2X 1 .4 0 (.0 56 ) 3 X 1 .0 0 (.0 39 ) 0 .25 (.0 10 ) M 3 .4 0 (.1 3 3 ) 3 .0 0 (.1 1 8 ) C AS 0 .8 0 (. 03 1 ) 3 X 0 .4 0 (. 01 6 ) 2.6 0 (.10 2 ) 2.2 0 (.08 7 ) Part Marking Information TO-247AC E X AM PLE : T HI S IS A N IRF 1010 E XAM P L E IT H HA S S E MB LY F PE 30 W : T IS IS AN IR LO T W IT H AS9B 1M Y CO DE SE M BL LOT C ODE 3A 1Q A A IN TE R NA T ION A L IN TE R N A TIO N A L R EC T IF IER R E C T IF IE R LOG O L O GO A S S EM A SSE M BL Y B LY L O T T O D E DE LO C CO P AR TRT UNU M BE R P A N M B ER IR FP E3 0 IR F 1010 9246 3A 1 Q 9 31M 02 9B D A TE C O D E (Y YW W ) (YYW W ) Y Y = YE A R YY = YE AR =K WW WW EE W E EK W D A TE C OD E WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371 http://www.irf.com/ Data and specifications subject to change without notice. 8/97 |
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