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MITSUBISHI Nch POWER MOSFET MITSUBISHI Nch POWER MOSFET FS10KM-10A FS10KM-10A HIGH-SPEED SWITCHING USE HIGH-SPEED SWITCHING USE FS10KM-10A OUTLINE DRAWING 10 0.3 Dimensions in mm 2.8 0.2 15 0.3 3.2 0.2 14 0.5 3.6 0.3 1.1 0.2 1.1 0.2 0.75 0.15 6.5 0.3 3 0.3 0.75 0.15 2.54 0.25 2.54 0.25 2.6 0.2 G 10V DRIVE G VDSS ............................................................................... 500V G rDS (ON) (MAX) .............................................................. 0.90 G ID ......................................................................................... 10A GATE DRAIN SOURCE TO-220FN APPLICATION SMPS, AC-adapter, Power supply of Printer, Copier, TV, VCR. etc. MAXIMUM RATINGS Symbol VDSS VGSS ID IDM IDA PD Tch Tstg Viso -- (Tc = 25C) Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Isolation voltage Weight L = 200H VGS = 0V VDS = 0V Conditions Ratings 500 30 10 30 10 35 -55 ~ +150 -55 ~ +150 4.5 0.2 Unit V V A A A W C C V g Sep. 2001 AC for 1minute, Terminal to case Typical value 2000 2.0 MITSUBISHI Nch POWER MOSFET FS10KM-10A HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS Symbol V (BR) DSS V (BR) GSS IGSS IDSS VGS (th) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) Parameter (Tch = 25C) Test conditions ID = 1mA, VGS = 0V IGS = 100A, VDS = 0V VGS = 25V, VDS = 0V VDS = 500V, VGS = 0V ID = 1mA, VDS = 10V ID = 5A, VGS = 10V ID = 5A, VGS = 10V ID = 5A, VDS = 10V VDS = 25V, VGS = 0V, f = 1MHz Limits Min. 500 30 -- -- 2.5 -- -- 4.8 -- -- -- -- -- -- -- -- -- Typ. -- -- -- -- 3.0 0.70 3.5 8.0 1100 110 25 20 30 140 40 1.5 -- Max. -- -- 10 1 3.5 0.90 4.5 -- -- -- -- -- -- -- -- 2.0 3.57 Unit V V A mA V V S pF pF pF ns ns ns ns V C/W Drain-source breakdown voltage Gate-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance VDD = 200V, ID = 5A, VGS = 10V, RGEN = RGS = 50 IS = 5A, VGS = 0V Channel to case PERFORMANCE CURVES POWER DISSIPATION DERATING CURVE 50 MAXIMUM SAFE OPERATING AREA 7 5 3 2 POWER DISSIPATION PD (W) 40 DRAIN CURRENT ID (A) 101 7 5 3 2 7 5 3 2 tw = 10s 100s 1ms TC = 25C Single Pulse 10 ms 30 100 20 10 10-1 7 5 3 2 DC 23 5 7 101 23 5 7 102 23 57 0 0 50 100 150 200 CASE TEMPERATURE TC (C) DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL) 20 VGS = 20V,10V,8V 6V OUTPUT CHARACTERISTICS (TYPICAL) 10 VGS = 20V,10V,6V DRAIN CURRENT ID (A) 16 PD = 35W DRAIN CURRENT ID (A) TC = 25C Pulse Test 8 TC = 25C Pulse Test 5V 12 5V 6 8 4 PD = 35W 4 4V 2 4V 0 0 10 20 30 40 50 0 0 4 8 12 16 20 DRAIN-SOURCE VOLTAGE VDS (V) DRAIN-SOURCE VOLTAGE VDS (V) Sep. 2001 MITSUBISHI Nch POWER MOSFET FS10KM-10A HIGH-SPEED SWITCHING USE ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) 40 TC = 25C Pulse Test ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 2.0 DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) () 32 1.6 24 ID = 15A 1.2 VGS = 10V VGS = 20V 16 0.8 8 10A 0.4 TC = 25C Pulse Test 0 5A 0 4 8 12 16 20 0 10-1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 DRAIN CURRENT ID (A) GATE-SOURCE VOLTAGE VGS (V) TRANSFER CHARACTERISTICS (TYPICAL) 20 102 7 5 3 2 FORWARD TRANSFER ADMITTANCE VS. DRAIN CURRENT (TYPICAL) DRAIN CURRENT ID (A) FORWARD TRANSFER ADMITTANCE yfs (S) 16 101 7 5 3 2 TC = 25C,75C,125C 12 8 100 7 5 3 2 VDS = 10V Pulse Test 2 3 5 7 100 2 3 5 7 101 4 0 TC = 25C VDS = 10V Pulse Test 0 4 8 12 16 20 10-1 -1 10 GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A) CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) 104 7 5 5 3 SWITCHING CHARACTERISTICS (TYPICAL) SWITCHING TIME (ns) CAPACITANCE Ciss, Coss, Crss (pF) 3 2 103 7 5 3 2 102 7 5 3 2 101 TCh = 25C VGS = 0V f = 1MHZ 2 td(off) Ciss 102 7 5 3 2 tr tf td(on) TCh = 25C VGS = 10V VDD = 200V RGEN = RGS = 50 2 3 5 7 101 Coss Crss 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 101 7 5 10-1 2 3 5 7 100 DRAIN-SOURCE VOLTAGE VDS (V) DRAIN CURRENT ID (A) Sep. 2001 MITSUBISHI Nch POWER MOSFET FS10KM-10A HIGH-SPEED SWITCHING USE GATE-SOURCE VOLTAGE VS. GATE CHARGE (TYPICAL) GATE-SOURCE VOLTAGE VGS (V) SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) 40 SOURCE CURRENT IS (A) TC = 25C 20 VDS = 100V 200V 16 32 75C 125C 12 400V 24 8 16 4 TCh = 25C ID = 10A 8 VGS = 0V Pulse Test 0 0 20 40 60 80 100 0 0 0.8 1.6 2.4 3.2 4.0 GATE CHARGE Qg (nC) SOURCE-DRAIN VOLTAGE VSD (V) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25C) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (tC) ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) 101 VGS = 10V 7 ID = 5A 5 Pulse Test 3 2 THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 5.0 GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V) VDS = 10V ID = 1mA 4.0 3.0 100 7 5 3 2 2.0 1.0 10-1 -50 0 50 100 150 0 -50 0 50 100 150 CHANNEL TEMPERATURE Tch (C) CHANNEL TEMPERATURE Tch (C) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25C) TRANSIENT THERMAL IMPEDANCE Zth (ch -c) (C/ W) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (tC) BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 1.4 VGS = 0V ID = 1mA TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 101 7 5 D = 1.0 3 = 0.5 2 1.2 100 = 0.2 7 5 = 0.1 3 = 0.05 2 = 0.02 1.0 0.8 PDM = 0.01 tw T D= tw T 10-1 7 5 3 2 Single Pulse 0.6 0.4 -50 0 50 100 150 10-2 -4 10 2 3 5 710-3 2 3 5 710-2 2 3 5 710-1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 PULSE WIDTH tw (s) CHANNEL TEMPERATURE Tch (C) Sep. 2001 |
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