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| DISCRETE SEMICONDUCTORS DATA SHEET M3D176 BA316; BA317; BA318 High-speed diodes Product specification Supersedes data of April 1996 1996 Sep 03 Philips Semiconductors Product specification High-speed diodes FEATURES * Hermetically sealed leaded glass SOD27 (DO-35) package * High switching speed: max. 4 ns * General application * Continuous reverse voltage: 10 V, 30 V, 50 V * Repetitive peak reverse voltage: max. 15 V, 40 V, 60 V * Repetitive peak forward current: max. 225 mA. The diodes are type branded. handbook, halfpage k BA316; BA317; BA318 DESCRIPTION The BA316, BA317, BA318 are high-speed switching diodes fabricated in planar technology, and encapsulated in hermetically sealed leaded glass SOD27 (DO-35) packages. a MAM246 APPLICATIONS * High-speed switching. Fig.1 Simplified outline (SOD27; DO-35) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRRM BA316 BA317 BA318 VR continuous reverse voltage BA316 BA317 BA318 IF IFRM IFSM continuous forward current repetitive peak forward current non-repetitive peak forward current square wave; Tj = 25 C prior to surge; see Fig.4 t = 1 s t = 1 ms t=1s Ptot Tstg Tj Note 1. Device mounted on an FR4 printed circuit-board; lead length 10 mm. total power dissipation storage temperature junction temperature Tamb = 25 C; note 1 - - - - -65 - 4 1 0.5 350 +200 200 A A A mW C C see Fig.2; note 1 - - - - - 10 30 50 100 225 V V V mA mA PARAMETER repetitive peak reverse voltage CONDITIONS MIN. - - - - 15 40 60 V V V MAX. UNIT 1996 Sep 03 2 Philips Semiconductors Product specification High-speed diodes ELECTRICAL CHARACTERISTICS Tj = 25 C; unless otherwise specified. SYMBOL VF PARAMETER forward voltage see Fig.3 IF = 1 mA IF = 10 mA IF = 100 mA IR reverse current BA316 BA317 see Fig.5 VR = 10 V VR = 10 V; Tj = 150 C VR = 10 V VR = 30 V VR = 30 V; Tj = 150 C BA318 VR = 30 V VR = 50 V VR = 50 V; Tj = 150 C Cd trr diode capacitance reverse recovery time f = 1 MHz; VR = 0; see Fig.6 CONDITIONS BA316; BA317; BA318 MIN. - - - - - - - - - - - - - MAX. 700 850 1100 200 100 50 200 100 50 200 100 2 4 UNIT mV mV mV nA A nA nA A nA nA A pF ns when switched from IF = 10 mA to IR = 60 mA; RL = 100 ; measured at IR = 1 mA; see Fig.7 when switched from IF = 50 mA; tr = 20 ns; see Fig.8 Vfr forward recovery voltage - 2.5 V THERMAL CHARACTERISTICS SYMBOL Rth j-tp Rth j-a Note 1. Device mounted on a printed circuit-board without metallization pad. PARAMETER thermal resistance from junction to tie-point thermal resistance from junction to ambient CONDITIONS lead length 10 mm lead length 10 mm; note 1 VALUE 240 500 UNIT K/W K/W 1996 Sep 03 3 Philips Semiconductors Product specification High-speed diodes GRAPHICAL DATA BA316; BA317; BA318 handbook, halfpage 200 MBG452 handbook, halfpage 300 MBG465 IF (mA) IF (mA) 200 (1) (2) (3) 100 100 0 0 100 Tamb (oC) 200 0 0 (1) Tj = 175 C; typical values. (2) Tj = 25 C; typical values. (3) Tj = 25 C; maximum values. 1 VF (V) 2 Device mounted on an FR4 printed-circuit board; lead length 10 mm. Fig.2 Maximum permissible continuous forward current as a function of ambient temperature. Fig.3 Forward current as a function of forward voltage. 102 handbook, full pagewidth IFSM (A) MBG704 10 1 10-1 1 10 102 103 tp (s) 104 Based on square wave currents. Tj = 25 C prior to surge. Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration. 1996 Sep 03 4 Philips Semiconductors Product specification High-speed diodes BA316; BA317; BA318 103 handbook, halfpage IR (A) MGD008 MGD004 handbook, halfpage 1.2 10 2 Cd (pF) 1.0 10 0.8 1 10-1 0.6 10-2 0 100 Tj (oC) 200 0.4 0 10 VR (V) 20 VR = VRmax. Solid line; maximum values. Dotted line; typical values. f = 1 MHz; Tj = 25 C. Fig.5 Reverse current as a function of junction temperature. Fig.6 Diode capacitance as a function of reverse voltage; typical values. 1996 Sep 03 5 Philips Semiconductors Product specification High-speed diodes BA316; BA317; BA318 handbook, full pagewidth tr D.U.T. 10% SAMPLING OSCILLOSCOPE R i = 50 VR 90% tp t RS = 50 V = VR I F x R S IF IF t rr t (1) MGA881 input signal output signal (1) IR = 1 mA. Fig.7 Reverse recovery voltage test circuit and waveforms. I 1 k 450 I 90% V R S = 50 D.U.T. OSCILLOSCOPE R i = 50 10% MGA882 V fr t tr tp t input signal output signal Fig.8 Forward recovery voltage test circuit and waveforms. 1996 Sep 03 6 Philips Semiconductors Product specification High-speed diodes PACKAGE OUTLINE BA316; BA317; BA318 handbook, full pagewidth 0.56 max 1.85 max 25.4 min 4.25 max 25.4 min MLA428 - 1 Dimensions in mm. Fig.9 SOD27 (DO-35). DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. 1996 Sep 03 7 |
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