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S11MS3/S21MS3/S21MS4
S11MS3/ S21MS3/S21MS4
s Features
1. Ultra-compact, mini-flat package type ( 3.6 x 4.4 x 2.0mm ) 2. Built-in zero-cross circuit ( S21MS4 ) 3. High isolation voltage between input and output ( Viso : 3 750Vrms ) 4. Recognized by UL, file No.E64380
High Density Surface Mount Type Mini-flat Package Phototriac Coupler
s Outline Dimensions
1.27 0.25 Model No. 65 4 S Anode mark 0.6MAX.
( Unit : mm )
Internal connection diagram 6 5 4 g Zero-cross circuit 1 3
1
3 0.4 0.1
0.10.1 2.6 0.2
For 100V lines No built-in zero-cross circuit Built-in zero-cross circuit S11MS3 -
For 200V lines S21MS3 S21MS4
6 1 Anode 3 Cathode 4 Anode/ cathode
0.5+ 0.4 - 0.2 7.0+ 0.2 - 0.7
s Applications
1. For triggering of medium/high power triacs
5 No external connection 6 Anode/ cathode
g Zero-cross circuit for S21MS4
s Absolute Maximum Ratings
Parameter Input Forward current Reverse voltage 1 RMS ON-state current 2 Peak one cycle surge current Repetitive peak OFF-state voltage 3 Isolation voltage Operating temperature Storage temperatrue 4 Soldering temperature Symbol IF VR IT I surge VDRM Viso Topr Tstg Tsol S11MS3
( Ta = 25C )
Rating S21MS3/S21MS4 50 6 0.05 0.6 400 600 3 750 - 30 to +100 - 40 to +125 260 Unit mA V A rms A V Vrms C C C
IT (A) 0 1 2 * IT 1, 2<= 90 2 180 90 360
Output
Soldering area 0.2mm or more
1 The definition of conduction angle of effective ON current I T should be as shown in the right drawing. 2 50Hz sine wave 3 40 to 60% RH, AC for 1 minute 4 For 10 seconds,
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0.2
0.05
s Model Line-ups
3.6 0.3
C0.4 Input side
4.4 0.2
5.3 0.3
S11MS3/S21MS3/S21MS4 s Electro-optical Characteristics
Input Parameter Forward voltage Reverse current Repetitive peak OFF-state current ON-state voltage Holding current Critical rate of rise of OFF-state voltage Zero-cross S21MS4 voltage Minimum trigger current Isolation resistance S11MS3/S21MS3 Turn-on time S21MS4 Symbol VF IR I DRM VT IH dV/dt VOX I FT RISO t on Conditions IF = 20mA VR = 3V VDRM = Rated IT = 0.05A VD = 6V VDRM = 1/ 2 * Rated IF = 15mA, Resistance load VD = 6V, RL = 100 DC500V, 40 to 60% RH VD = 6V, RL = 100 , IF = 20mA MIN. 0.1 100 5 x 1010 TYP. 1.2 1 000 1011 -
( Ta= 25C)
MAX. 1.4 10 1 2.5 3.5 35 10 100 50 Unit V A A V mA V/ s V mA s
Output
Transfer characteristics
Fig. 1 RMS ON-state Current vs. Ambient Temperature
60 RMS ON-state current I T ( mA rms )
Fig. 2 Forward Current vs. Ambient Temperature
60
50 Forward current I F ( mA ) 0 50 Ambient temperature T a ( C ) 100
50
40
40
30
30
20
20
10 0 -30
10 0 - 30 0 50 Ambient temperature T a ( C ) 100
Fig. 3 Forward Current vs. Forward Voltage
200 100 Forward current I F ( mA ) 50 20 10 5 T a = 100C 75C 50C
Fig. 4-a Minimum Trigger Current vs. Ambient Temperature (S11MS3/S21MS3)
12 V D = 6V Minimum trigger current I FT ( mA ) 10 R L = 100
25C 0C - 30C
8
6
4
2 1 0 0.5 1.0 1.5 2.0 Forward voltage V F ( V ) 2.5 3.0
2
0
- 30
0 20 40 60 80 Ambient temperature T a ( C )
100
S11MS3/S21MS3/S21MS4
Fig. 4-b Minimum Trigger Current vs. Ambient Temperature (S21MS4)
14 12 10 8 6 4 2 0 - 30 V D = 6V RL = 100
Fig. 5-a Relative Repetitive Peak OFF-state Voltage vs. Ambient Temperature (S11MS3/S21MS3 )
1.3 Relative repetitive peak OFF-state voltage V DRM ( Tj = T a ) /V DRM ( Ti = 25C)
Minimum trigger current I FT ( mA )
1.2
1.1
1.0
0.9
0.8 0.7
0 20 40 60 80 Ambient temperature T a ( C )
100
- 30
0 20 40 60 80 Ambient temperature T a ( C )
100
Fig. 5-b Relative Repetitive Peak OFF-state Voltage vs. Ambient Temperature (S21MS4 )
1.3 Relative repetitive peak OFF-state voltage V DRM ( Tj = T a ) /V DRM ( Tj = 25C)
Fig. 6 ON-state Voltage vs. Ambient Temperature
2.0 I T = 50mA
1.2 ON-state voltage V T ( V )
1.8
1.1
1.6
S21MS4
1.0
1.4 S11MS3 S21MS3
0.9
1.2
0.8
1.0 0.8 - 30
0.7 - 30
0 20 40 60 80 Ambient temperature T a ( C )
100
0 20 40 60 80 Ambient temperature T a ( C )
100
Fig. 7-a Holding Current vs. Ambient Temperature (S11MS3/S21MS3)
10 V D = 6V 5 Holding current I H ( mA )
Fig. 7-b Holding Current vs. Ambient Temperature (S21MS4 )
VD = 6V 10 Holding current I H ( mA ) 5
2 1 0.5
2 1 0.5
0.2 0.1 - 30
0.2 0.1 - 30
60 80 Ambient temperature T a ( C )
0
20
40
100
0 20 40 60 Ambient temperature T a ( C )
80
100
S11MS3/S21MS3/S21MS4
Fig. 8-a Repetitive Peak OFF-state Current vs. OFF-state Voltage (S11MS3 )
2
Fig. 8-b Repetitive Peak OFF-state Current vs. OFF-state Voltage (S21MS3/S21MS4)
2
T a = 25C Repetitive peak OFF-state current I DRM ( A ) Repetitive peak OFF-state current I DRM ( A ) 10 - 9 10 - 9 S21MS4
T a = 25C
5
5
2
2
S11MS3 10 - 10
S21MS3 10 - 10
5
5
100
200
300 400 500 OFF-state voltage V D ( V )
600
100
200
300 400 500 OFF-state voltage V D ( V )
600
Fig. 9 Relative Repetitive Peak OFF-state Current vs. Ambient Temperature
10 2 Relative repetitive peak OFF-state current I DRM ( Tj = T a ) /I RM ( Tj= 25C) V DRM = 400V
Fig.10 Zero-cross Voltage vs. Ambient Temperature (S21MS4 ) 30
R load I F = 15mA Zero-cross voltage V OX ( V )
10 1
25
10 0
20
10 - 1
10 - 2 -30
15 0 20 40 60 Ambient temperature T a ( C ) 80 100 -30 0 20 40 60 80 Ambient temperature T a ( C ) 100
Fig.11 ON-state Current vs. ON-state Voltage
100 90 80 ON-state current I T ( mA ) 70 60 50 40 30 20 10 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 ON-state voltage V T ( V ) S21MS4 VIN S11MS3 S21MS3 + VCC I F = 20mA Ta = 25C
s Basic Operation Circuit
S11MS3/ S21MS3/S21MS4
1 6 Load AC100V (S11MS3 ) AC200V (S21MS3/S21MS4 ) 4 Zero-cross Circuit ( S21MS4 )
3 Zerocross Circuit
q
Please refer to the chapter " Precautions for Use." ( Page 78 to 93) .

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