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Philips Semiconductors
Objective specification
TrenchMOSTM transistor
PSMN009-100W
FEATURES
* 'Trench' technology * Very low on-state resistance * Fast switching * High thermal cycling performance * Low thermal resistance
SYMBOL
d
QUICK REFERENCE DATA VDSS = 100 V ID = 100 A
g
RDS(ON) 9 m
s
GENERAL DESCRIPTION
N-channel enhancement mode field-effect power transistor in a plastic envelope using 'trench' technology. The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching applications. The PSMN009-100W is supplied in the SOT429 (TO247) conventional leaded package.
PINNING
PIN 1 2 3 tab gate drain source drain DESCRIPTION
SOT429 (TO247)
1
2
3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER VDSS VDGR VGS ID IDM PD Tj, Tstg Drain-source voltage Drain-gate voltage Gate-source voltage Continuous drain current Pulsed drain current Total power dissipation Operating junction and storage temperature CONDITIONS Tj = 25 C to 175C Tj = 25 C to 175C; RGS = 20 k Tmb = 25 C Tmb = 100 C Tmb = 25 C Tmb = 25 C MIN. - 55 MAX. 100 100 20 1001 79 300 300 175 UNIT V V V A A A W C
AVALANCHE ENERGY LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER EAS IAS Non-repetitive avalanche energy Non-repetitive avalanche current CONDITIONS Unclamped inductive load, IAS = 96 A; tp = 0.2 ms; Tj prior to avalanche = 25C; VDD 50 V; RGS = 50 ; VGS = 5 V MIN. MAX. 1255 100 UNIT mJ A
1 Maximum continuous current limited by package. February 1999 1 Rev 1.000
Philips Semiconductors
Objective specification
TrenchMOSTM transistor
PSMN009-100W
THERMAL RESISTANCES
SYMBOL PARAMETER Rth j-mb Rth j-a Thermal resistance junction to mounting base Thermal resistance junction to ambient CONDITIONS TYP. in free air 45 MAX. 0.5 UNIT K/W K/W
ELECTRICAL CHARACTERISTICS
Tj= 25C unless otherwise specified SYMBOL PARAMETER V(BR)DSS VGS(TO) RDS(ON) IGSS IDSS Qg(tot) Qgs Qgd td on tr td off tf Ld Ld Ls Ciss Coss Crss Drain-source breakdown voltage Gate threshold voltage CONDITIONS VGS = 0 V; ID = 0.25 mA; Tj = -55C VDS = VGS; ID = 1 mA Tj = 175C Tj = -55C Drain-source on-state VGS = 10 V; ID = 25 A resistance Gate source leakage current VGS = 10 V; VDS = 0 V Zero gate voltage drain VDS = 100 V; VGS = 0 V; current Total gate charge Gate-source charge Gate-drain (Miller) charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Internal drain inductance Internal drain inductance Internal source inductance Input capacitance Output capacitance Feedback capacitance Tj = 175C Tj = 175C MIN. 100 89 2.0 1.0 TYP. MAX. UNIT 3.0 8 2 0.05 190 35 90 58 133 250 133 3.5 4.5 7.5 7500 917 508 4.0 4.4 9 25 100 10 500 8000 950 550 V V V V V m m nA A A nC nC nC ns ns ns ns nH nH nH pF pF pF
ID = 100 A; VDD = 80 V; VGS = 10 V
VDD = 50 V; RD = 2 ; VGS = 10 V; RG = 5 Resistive load Measured from tab to centre of die Measured from drain lead to centre of die Measured from source lead to source bond pad VGS = 0 V; VDS = 25 V; f = 1 MHz
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
Tj = 25C unless otherwise specified SYMBOL PARAMETER IS ISM VSD trr Qrr Continuous source current (body diode) Pulsed source current (body diode) Diode forward voltage Reverse recovery time Reverse recovery charge CONDITIONS MIN. IF = 25 A; VGS = 0 V IF = 75 A; VGS = 0 V IF = 20 A; -dIF/dt = 100 A/s; VGS = 0 V; VR = 30 V TYP. MAX. UNIT 0.85 1.1 200 1.5 100 300 1.2 A A V V ns C
February 1999
2
Rev 1.000
Philips Semiconductors
Objective specification
TrenchMOSTM transistor
PSMN009-100W
MECHANICAL DATA
Dimensions in mm Net Mass: 5 g
Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-247
SOT429
E P
A A1 q S
R D Y
L1(1) Q b2 L
1
2 b b1 e e
3 wM c
0
10 scale
20 mm
DIMENSIONS (mm are the original dimensions) UNIT mm Note 1. Terminals are uncontrolled within zone L1. OUTLINE VERSION SOT429 REFERENCES IEC JEDEC TO-247 EIAJ EUROPEAN PROJECTION ISSUE DATE 97-06-11 A 5.3 4.7 A1 1.9 1.7 b 1.2 0.9 b1 2.2 1.8 b2 3.2 2.8 c 0.9 0.6 D 21 20 E 16 15 e 5.45 L 16 15 L1 4.0 3.6 P 3.7 3.3 Q 2.6 2.4 q 5.3 R 3.5 3.3 S 7.5 7.1 w 0.4 Y 15.7 15.3 6 4 17 13
Fig.1. SOT429; pin 2 connected to mounting base.
Notes 1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent damage to MOS gate oxide. 2. Refer to mounting instructions for SOT429 envelope. 3. Epoxy meets UL94 V0 at 1/8".
February 1999
3
Rev 1.000
Philips Semiconductors
Objective specification
TrenchMOSTM transistor
PSMN009-100W
DEFINITIONS
Data sheet status Objective specification Product specification Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. (c) Philips Electronics N.V. 1999 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. This data sheet contains target or goal specifications for product development. This data sheet contains final product specifications. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
February 1999
4
Rev 1.000

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