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Philips Semiconductors
Product specification
Rectifier diodes Schottky barrier
FEATURES
* Low forward volt drop * Fast switching * Reverse surge capability * High thermal cycling performance * Low thermal resistance
PBYR1045CTD series
SYMBOL
QUICK REFERENCE DATA VR = 40 V/ 45 V IO(AV) = 10 A VF 0.6 V SOT428
DESCRIPTION
tab
a1 1 k2
a2 3
GENERAL DESCRIPTION
Dual schottky rectifier diodes intended for use as output rectifiers in low voltage, high frequency switched mode power supplies. The PBYR1045CTD series is supplied in the SOT428 surface mounting package.
PINNING
PIN 1 2 3 tab anode 1 cathode1 anode 2
2
cathode
1 3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER VRRM VRWM VR IO(AV) IFRM IFSM Peak repetitive reverse voltage Working peak reverse voltage Continuous reverse voltage Average rectified forward current (both diodes conducting) Repetitive peak forward current per diode Non-repetitive peak forward current per diode Peak repetitive reverse surge current per diode Operating junction temperature Storage temperature CONDITIONS PBYR10 Tmb 108 C square wave; = 0.5; Tmb 127 C square wave; = 0.5; Tmb 127 C t = 10 ms t = 8.3 ms sinusoidal; Tj = 125 C prior to surge; with reapplied VRRM(max) pulse width and repetition rate limited by Tj max - 65 MIN. MAX. 40CTD 40 40 40 10 10 100 110 1 150 175 45CTD 45 45 45 UNIT V V V A A A A A C C
IRRM Tj Tstg
1 it is not possible to make connection to pin 2 of the SOT428 package July 1998 1 Rev 1.200
Philips Semiconductors
Product specification
Rectifier diodes Schottky barrier
THERMAL RESISTANCES
SYMBOL PARAMETER Rth j-mb Rth j-a Thermal resistance junction to mounting base Thermal resistance junction to ambient CONDITIONS per diode both diodes pcb mounted, minimum footprint, FR4 board
PBYR1045CTD series
MIN. -
TYP. MAX. UNIT 50 4.5 3 K/W K/W K/W
ELECTRICAL CHARACTERISTICS
All characteristics are per diode at Tj = 25 C unless otherwise specified SYMBOL PARAMETER VF IR Cd Forward voltage Reverse current Junction capacitance CONDITIONS IF = 5 A; Tj = 125C IF = 10 A; Tj = 125C IF = 10 A VR = VRWM VR = VRWM; Tj = 100C VR = 5 V; f = 1 MHz, Tj = 25C to 125C MIN. TYP. MAX. UNIT 0.52 0.7 0.72 0.06 6 155 0.6 0.77 0.87 0.5 15 V V V mA mA pF
July 1998
2
Rev 1.200
Philips Semiconductors
Product specification
Rectifier diodes Schottky barrier
PBYR1045CTD series
5 4 3 2
Forward dissipation, PF (W) PBYR1045CTD Vo = 0.43 V Rs = 0.034 Ohms 0.5 0.2 0.1
Tmb(max) / C 137.5 D = 1.0 132 146.5
100
Reverse current, IR (mA)
PBYR645CT
10
125 C 100 C
1
I tp D= tp T t
75 C 50 C Tj = 25 C
141 155.5
1
T
0.1
0
0
1
2 3 4 5 6 Average forward current, IF(AV) (A)
7
150 8
0.01
0
25 Reverse voltage, VR (V)
50
Fig.1. Maximum forward dissipation PF = f(IF(AV)) per diode; square current waveform where IF(AV) =IF(RMS) x D.
Forward dissipation, PF (W) PBYR1045CTD Tmb(max) / C 137.5 Vo = 0.43 V Rs = 0.034 Ohms a = 1.57 4 132 1.9 2.2 2.8 3 146.5 4 5 2 1 0 141 155.5 150 5
Fig.4. Typical reverse leakage current per diode; IR = f(VR); parameter Tj
Cd / pF 1000
PBYR645CT
100
10
0
1
2 3 4 Average forward current, IF(AV) (A)
1
10 VR / V
100
Fig.2. Maximum forward dissipation PF = f(IF(AV)) per diode; sinusoidal current waveform where a = form factor = IF(RMS) / IF(AV).
BYV118
Fig.5. Typical junction capacitance per diode; Cd = f(VR); f = 1 MHz; Tj = 25C to 125 C.
20
Forward current, IF (A) Tj = 25 C Tj = 125 C
10
Transient thermal impedance, Zth j-mb (K/W)
15
1
typ 10 max 5
0.1
P D tp D= tp T t
T
0
0.01
0
0.2
0.4 0.6 0.8 1 Forward voltage, VF (V)
1.2
1.4
1us
10us
100us
1ms 10ms 100ms 1s pulse width, tp (s) BYV118
10s
Fig.3. Typical and maximum forward characteristic IF = f(VF); parameter Tj
Fig.6. Transient thermal impedance; per diode; Zth j-mb = f(tp).
July 1998
3
Rev 1.200
Philips Semiconductors
Product specification
Rectifier diodes Schottky barrier
MECHANICAL DATA
Dimensions in mm : Net Mass: 1.4 g
seating plane 6.73 max 1.1 2.38 max 0.93 max
PBYR1045CTD series
5.4
tab
4 min 6.22 max 10.4 max 4.6
2 1 3
0.5 min 0.3 0.5
0.5
0.8 max (x2) 2.285 (x2)
Fig.7. SOT428 : centre pin connected to mounting base.
MOUNTING INSTRUCTIONS
Dimensions in mm
7.0
7.0
2.15 2.5
1.5
4.57
Fig.8. SOT428 : soldering pattern for surface mounting.
Notes 1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent damage to MOS gate oxide. 2. Epoxy meets UL94 V0 at 1/8".
July 1998
4
Rev 1.200
Philips Semiconductors
Product specification
Rectifier diodes Schottky barrier
DEFINITIONS
Data sheet status Objective specification Product specification Limiting values
PBYR1045CTD series
This data sheet contains target or goal specifications for product development. This data sheet contains final product specifications.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. (c) Philips Electronics N.V. 1998 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
July 1998
5
Rev 1.200

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