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HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6549 Issued Date : 1992.11.25 Revised Date : 2002.05.08 Page No. : 1/4
HSB772S
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The HSB772S is designed for using in output stage of 0.75W amplifier, voltage regulator, DC-DC converter and driver.
Absolute Maximum Ratings
TO-92
* Maximum Temperatures Storage Temperature .......................................................................................... -55 to +150 C Junction Temperature.................................................................................... +150 C Maximum * Maximum Power Dissipation Total Power Dissipation (Ta=25C) ............................................................................... 750 mW * Maximum Voltages and Currents (Ta=25C) VCBO Collector to Base Voltage ........................................................................................ -40 V VCEO Collector to Emitter Voltage..................................................................................... -30 V VEBO Emitter to Base Voltage............................................................................................. -5 V IC Collector Current ............................................................................................................. -3 A
Characteristics (Ta=25C)
Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *VBE(sat) *hFE1 *hFE2 fT Cob Min. -40 -30 -5 30 100 Typ. -0.3 -1 160 80 55 Max. -1 -1 -0.5 -2 400 Unit V V V uA uA V V Test Conditions IC=-100uA, IE=0 IC=-1mA, IB=0 IE=-10uA, IC=0 VCB=-30V, IE=0 VEB=-3V, IC=0 IC=-2A, IB=-0.2A IC=-2A, IB=-0.2A VCE=-2V, IC=-20mA VCE=-2V, IC=-1A VCE=-5V, IC=-0.1A, f=100MHz VCB=-10V, f=1MHz
*Pulse Test: Pulse Width 380us, Duty Cycle2%
MHz pF
Classification Of hFE2
Rank Range Q 100-200 P 160-320 E 200-400
HSB772S
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Current Gain & Collector Current
1000 125 C
o
Spec. No. : HE6549 Issued Date : 1992.11.25 Revised Date : 2002.05.08 Page No. : 2/4
Saturation Voltage & Collector Current
10000 VCE(s at) @ IC=5IB
75 C
o
25 C
o
Saturation Voltage (mV)
1000 75 C 100
o
hFE
100
hFE @ VCE=2V
125 C 10 25 C
o
o
10 1 10 100 1000 10000
1 1 10 100 1000 10000
Collector Current-IC (mA)
Collector Current-IC (mA)
Saturation Voltage & Collector Current
10000 VCE(sat) @ IC=10IB
Saturation Voltage & Collector Current
10000 VCE(sat) @ IC=20IB
Saturation Voltage (mV)
Saturation Voltage (mV)
1000 75 C 100 125 C 10
o o
1000 75 C
o o
25 C
o
100 125 C
o
25 C
10
1 1 10 100 1000 10000
1 1 10 100 1000 10000
Collector Current-IC (mA)
Collector Current-IC (mA)
Saturation Voltage & Collector Current
10000 VCE(sat) @ IC=40IB 1000 75 C
o
Saturation Voltage & Collector Current
10000 VBE(sat) @ IC=10IB
Saturation Voltage (mV)
Saturation Voltage (mV)
75 C 1000 25 C
o
o
100
125 C 25 C
o
o
10
125 C
o
1 1 10 100 1000 10000
100 1 10 100 1000 10000
Collector Current-IC (mA)
Collector Current-IC (mA)
HSB772S
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6549 Issued Date : 1992.11.25 Revised Date : 2002.05.08 Page No. : 3/4
Cutoff Frequency & Collector Current
1000 1000
Capacitance & Reverse-Biased Voltage
Cutoff Frequency (MHz).. .
100 VCE=5V
Capacitance (pF)
100
Cob
10
10
1 1 10 100 1000
1 0.1 1 10 100
Collector Current (mA)
Reverse-Biased Voltage (V)
Safe Operation Area
100 PT=1ms
Power Derating
800 700
Collector Current (A)
10
Power Dissipation-PD (mW)
10 100
PT=100ms
600 500 400 300 200 100
1
PT=1s
0.1
0.01 1
0 0 50 100
o
150
200
Forward Biased Voltage (V)
Ambient Temperature-Ta ( C)
HSB772S
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
TO-92 Dimension
A B
1 2 3
Date Code
Spec. No. : HE6549 Issued Date : 1992.11.25 Revised Date : 2002.05.08 Page No. : 4/4
2
Marking:
H SB 772S Rank Control Code
3
C
Style: Pin 1.Emitter 2.Collector 3.Base
D
H I E F
G
1
3-Lead TO-92 Plastic Package HSMC Package Code: A
*: Typical
DIM A B C D E F
Inches Min. Max. 0.1704 0.1902 0.1704 0.1902 0.5000 0.0142 0.0220 *0.0500 0.1323 0.1480
Millimeters Min. Max. 4.33 4.83 4.33 4.83 12.70 0.36 0.56 *1.27 3.36 3.76
DIM G H I 1 2 3
Inches Min. Max. 0.0142 0.0220 *0.1000 *0.0500 *5 *2 *2
Millimeters Min. Max. 0.36 0.56 *2.54 *1.27 *5 *2 *2
Notes: 1.Dimension and tolerance based on our Spec. dated Apr. 25,1996.
2.Controlling dimension: millimeters. 3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 4.If there is any question with packing specification or packing method, please contact your local HSMC sales office.
Material:
* Lead: 42 Alloy; solder plating * Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
* All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC. * HSMC reserves the right to make changes to its products without notice. * HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. * HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
* Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C. Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 * Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel: 886-3-5983621~5 Fax: 886-3-5982931
HSB772S
HSMC Product Specification

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