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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2826
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
ORDERING INFORMATION
PART NUMBER 2SK2826 2SK2826-S 2SK2826-ZJ PACKAGE TO-220AB TO-262 TO-263
DESCRIPTION
This product is N-Channel MOS Field Effect Transistor designed for high current switching applications.
FEATURES
* Super Low On-State Resistance RDS(on)1 = 6.5 m (MAX.) (VGS = 10 V, ID = 35 A) RDS(on)2 = 9.7 m (MAX.) (VGS = 4.0 V, ID = 35 A) * Low Ciss : Ciss = 7200 pF (TYP.) * Built-in Gate Protection Diode
ABSOLUTE MAXIMUM RATINGS (TA = 25 C)
Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) Drain Current (Pulse)
Note1
VDSS VGSS(AC) VGSS(DC) ID(DC) ID(pulse) PT PT Tch Tstg
60 20 +20, -10 70 280 100 1.5 150 -55 to + 150 70 490
V V V A A W W C C A mJ
Total Power Dissipation (TC = 25C) Total Power Dissipation (TA = 25C) Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche Energy
Note2 Note2
IAS EAS
Notes 1. PW 10 s, Duty cycle 1 % 2. Starting Tch = 25 C, RA = 25 , VGS = 20 V 0 V
THERMAL RESISTANCE
Channel to Case Channel to Ambient Rth(ch-C) Rth(ch-A) 1.25 83.3 C/W C/W
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.
Document No. D11273EJ2V0DS00 (2nd edition) Date Published April 1999 NS CP(K) Printed in Japan
The mark * shows major revised points.
(c)
1998
2SK2826
ELECTRICAL CHARACTERISTICS (TA = 25 C)
CHARACTERISTICS SYMBOL RDS(on)1 RDS(on)2 Gate to Source Cut-off Voltage Forward Transfer Admittance Drain Leakage Current Gate to Source Leakage Current Input Capacitance Output Capacitance Reverse Transfer Capacitance VGS(off) | yfs | IDSS IGSS Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr TEST CONDITIONS VGS = 10 V, ID = 35 A VGS = 4.0 V, ID = 35 A VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 35 A VDS = 60 V, VGS = 0 V VGS = 20 V, VDS = 0 V VDS = 10 V VGS = 0 V f = 1 MHz ID = 35 A VGS(on) = 10 V VDD = 30 V RG = 10 ID = 70 A VDD = 48 V VGS = 10 V IF = 70 A, VGS = 0 V IF = 70 A, VGS = 0 V di/dt = 100A/ s 7200 2000 700 100 1200 440 520 150 20 40 0.97 80 250 1.0 20 MIN. TYP. 5.5 7.0 1.5 94 10 10 MAX. 6.5 9.7 2.0 UNIT m m V S
*
Drain to Source On-state Resistance
A A
pF pF pF ns ns ns ns nC nC nC V ns nC
* * * *
Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T. RG = 25 PG. VGS = 20V 0 V 50
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
L VDD PG. RG RG = 10
VGS RL VDD ID
90 % 90 % ID
VGS
Wave Form
0
10 %
VGS(on)
90 %
BVDSS IAS ID VDD VDS
VGS 0 t t = 1 s Duty Cycle 1 %
ID
Wave Form
0
10 % td(on) ton tr td(off) toff
10 % tf
Starting Tch
TEST CIRCUIT 3 GATE CHARGE
D.U.T. IG = 2 mA PG. 50
RL VDD
2
Data Sheet D11273EJ2V0DS00
2SK2826
TYPICAL CHARACTERISTICS (TA = 25 C)
DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 140 TOTAL POWER DISSIPATION vs. CASE TEMPERATURE
dT - Percentage of Rated Power - %
PT - Total Power Dissipation - W
100 80 60 40 20
120 100 80 60 40 20 0 20 40 60 80 100 120 140 160
0
20
40
60
80
100 120 140 160
TC - Case Temperature - C
TC - Case Temperature - C DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE Pulsed
FORWARD BIAS SAFE OPERATING AREA 1000
ID(pulse)
PW
10 0
=
100
100
R
D
S(
) on
m Li
1
ID(DC)
s
ID - Drain Current - A
ID - Drain Current - A
t (a
VG
d ite V) 0 =1 S
10
s
m
80 60 VGS =10 V 40 VGS = 4.0 V 20
s
10
Po we
10
rD
m
0
s
m
10
iss DC ipa tio n
s
Lim
ite
d
1 0.1
TC = 25C Single Pulse
1
10
100
0
0.2
0.4
0.6
0.8
VDS - Drain to Source Voltage - V
VDS - Drain to Source Voltage - V
FORWARD TRANSFER CHARACTERISTICS 1000 Pulsed
ID - Drain Current - A
100
10 TA = -25C 25C 75C 125C 2 4
1
VDS = 10 V 6 8
0
VGS - Gate to Source Voltage - V
Data Sheet D11273EJ2V0DS00
3
2SK2826
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1 000
rth(t) - Transient Thermal Resistance - C/W
Rth(ch-A) = 83.3 C/W 100
10
1
Rth(ch-C) = 1.25 C/W
0.1
0.01 0.001 10 Single Pulse TC = 25C 100 1m 10 m 100 m 1 10 100 1 000
PW - Pulse Width - s
RDS(on) - Drain to Source On-State Resistance - m
FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT
| yfs | - Forward Transfer Admittance - S
100 VGS = 0V 10
VDS=10V Pulsed
DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 30 Pulsed
20
1.0
TA = 175C 75C 25C -25C 1.0 10 100
10 TA = 25C ID = 35 A 0 10 20 30
0.1 0.1
ID - Drain Current - A
RDS(on) - Drain to Source On-State Resistance - m
VGS - Gate to Source Voltage - V GATE TO SOURCE CUTOFF VOLTAGE vs. CHANNEL TEMPERATURE
DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT
VGS(off) - Gate to Source Cutoff Voltage - V
30
Pulsed
2.0
VDS = 10 V ID = 1 mA
20
1.5
1.0
10
VGS = 4.0 V VGS = 10 V
0.5
0
10
100
1000
0 - 50
0
50
100
150
200
ID - Drain Current - A
Tch - Channel Temperature - C
4
Data Sheet D11273EJ2V0DS00
2SK2826
RDS(on) - Drain to Source On-state Resistance - m
DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE
ISD - Diode Forward Current - A
SOURCE TO DRAIN DIODE FORWARD VOLTAGE Pulsed 100 VGS = 10 V 10 VGS = 0 V 1
20
15 VGS = 4.0 V 10 VGS = 10 V
5
0.1
0 - 50 0 50 100
ID = 25 A 150 0 1.5 1.0 0.5 VSD - Source to Drain Voltage - V
Tch - Channel Temperature - C
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 100 000
Ciss, Coss, Crss - Capacitance - pF
*
10 000
td(on), tr, td(off), tf - Switching Time - ns
SWITCHING CHARACTERISTICS
VGS = 0 V f = 1 MHz
tr 1 000 tf td(off) 100 td(on) VDD = 30 V VGS = 10 V RG = 10 100
10 000
Ciss
Coss 1 000 Crss 100 0.1
1
10
100
10 0.1
1
10
VDS - Drain to Source Voltage - V
ID - Drain Current - A
REVERSE RECOVERY TIME vs. DRAIN CURRENT 1000
trr - Reverse Recovery Time - ns VDS - Drain to Source Voltage - V
di/dt = 100 A/s VGS = 0 V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS 8 80
VGS - Gate to Source Voltage - V
VGS 60 VDD = 48 V 30 V 12 V 6
100
40
4
10
20 VDS 0 50 100 150
2
1 0.1
1.0
10
100
200
IF - Drain Current - A
QG - Gate Charge - nC
Data Sheet D11273EJ2V0DS00
5
2SK2826
SINGLE AVALANCHE ENERGY vs. INDUCTIVE LOAD SINGLE AVALANCHE ENERGY DERATING FACTOR 160 IAS = 70 A VDD = 30 V RG = 25 VGS = 20 V 0 V IAS 70 A
| IAS | - Single Avalanche Energy - mJ
100
90
mJ
Energy Derating Factor - %
10 m
EAS
=4
140 120 100 80 60 40 20
10
1.0 VDD = 30 V VGS = 20 V 0 V RG = 25 10 100
1m
L - Inductive Load - H
0 25
50
75
100
125
150
Starting Tch - Starting Channel Temperature - C
6
Data Sheet D11273EJ2V0DS00
2SK2826
PACKAGE DRAWINGS (Unit : mm)
1)TO-220AB (MP-25) 2)TO-262 (MP-25 Fin Cut)
3.00.3
1.00.5
10.6 MAX. 10.0
4.8 MAX.
3.60.2
5.9 MIN.
4.8 MAX. 1.30.2
1.30.2
(10) 4
15.5 MAX.
4 123
6.0 MAX.
1
2
3
1.30.2
1.30.2
12.7 MIN.
12.7 MIN.
8.50.2
0.750.1 2.54 TYP.
0.50.2 2.54 TYP. 1.Gate 2.Drain 3.Source 4.Fin (Drain)
2.80.2
0.750.3 2.54 TYP.
0.50.2 2.54 TYP. 1.Gate 2.Drain 3.Source 4.Fin (Drain)
2.80.2
3)TO-263 (MP-25ZJ)
(10) 4
1.00.5 8.50.2
4.8 MAX. 1.30.2
EQUIVALENT CIRCUIT
Drain
5.70.4
1.40.2 0.70.2 2.54 TYP. 1 2
(
R 0.5
)
.8R )
Gate
0.50.2
Body Diode
3 2.54 TYP.
(0
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device.
2.80.2
1.Gate 2.Drain 3.Source 4.Fin (Drain)
Gate Protection Diode
Source
Data Sheet D11273EJ2V0DS00
7
2SK2826
* The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. * No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. * NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. * Descriptions of circuits, software, and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software, and information in the design of the customer's equipment shall be done under the full responsibility of the customer. NEC Corporation assumes no responsibility for any losses incurred by the customer or third parties arising from the use of these circuits, software, and information. * While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. * NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance.
M7 98. 8

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