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| MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N6040/D Plastic Medium-Power Complementary Silicon Transistors . . . designed for general-purpose amplifier and low-speed switching applications. * High DC Current Gain -- hFE = 2500 (Typ) @ IC = 4.0 Adc * Collector-Emitter Sustaining Voltage -- @ 100 mAdc -- VCEO(sus) = 60 Vdc (Min) -- 2N6040, 2N6043 VCEO(sus) = 80 Vdc (Min) -- 2N6041, 2N6044 VCEO(sus) = 100 Vdc (Min) -- 2N6042, 2N6045 * Low Collector-Emitter Saturation Voltage -- VCE(sat) = 2.0 Vdc (Max) @ IC = 4.0 Adc -- 2N6040,41, 2N6043,44 VCE(sat) = 2.0 Vdc (Max) @ IC = 3.0 Adc -- 2N6042, 2N6045 * Monolithic Construction with Built-In Base-Emitter Shunt Resistors 2N6040 thru 2N6042* NPN 2N6043 thru 2N6045* *Motorola Preferred Device PNP PD, POWER DISSIPATION (WATTS) II II IIIIIIIIIIIIIIIIIIIIIII I II II I I IIIIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII II I I II II IIIIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIII I II III I II IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II II IIIIIIIIIIIIIIIIIIIIIII I II II I II II IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII I II II II II IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII II II IIIIIIIIIIIIIIIIIIIIIII MAXIMUM RATINGS (1) Rating Symbol VCEO VCB VEB IC IB PD 2N6040 2N6043 60 60 2N6041 2N6044 80 80 2N6042 2N6045 100 100 Unit Vdc Vdc Vdc Adc Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage 5.0 8.0 16 Collector Current -- Continuous Peak Base Current 120 mAdc Watts W/_C Total Power Dissipation @ TC = 25_C Derate above 25_C Operating and Storage Junction, Temperature Range Characteristic 75 0.60 TJ, Tstg - 65 to + 150 DARLINGTON 8 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 - 80 - 100 VOLTS 75 WATTS _C THERMAL CHARACTERISTICS Symbol JC JA Max 57 Unit Thermal Resistance, Junction to Case 1.67 _C/W _C/W Thermal Resistance, Junction to Ambient (1) Indicates JEDEC Registered Data. TA TC 4.0 80 CASE 221A-06 TO-220AB 3.0 60 2.0 40 TC 1.0 20 TA 0 0 0 20 40 60 80 100 T, TEMPERATURE (C) 120 140 160 Figure 1. Power Derating Preferred devices are Motorola recommended choices for future use and best overall value. REV 1 (c) Motorola, Inc. 1997 Motorola Bipolar Power Transistor Device Data 1 2N6040 thru 2N6042 2N6043 thru 2N6045 t, TIME ( s) III I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII I I IIII II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIII I I III II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII *ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic OFF CHARACTERISTICS Symbol Min Max Unit Collector-Emitter Sustaining Voltage (IC = 100 mAdc, IB = 0) VCEO(sus) Vdc 2N6040, 2N6043 2N6041, 2N6044 2N6042, 2N6045 60 80 100 -- -- -- Collector Cutoff Current (VCE = 60 Vdc, IB = 0) (VCE = 80 Vdc, IB = 0) (VCE = 100 Vdc, IB = 0) ICEO A 2N6040, 2N6043 2N6041, 2N6044 2N6042, 2N6045 -- -- -- -- -- -- -- -- -- -- -- -- -- 20 20 20 Collector Cutoff Current (VCE = 60 Vdc, VBE(off) = 1.5 Vdc) (VCE = 80 Vdc, VBE(off) = 1.5 Vdc) (VCE = 100 Vdc, VBE(off) = 1.5 Vdc) (VCE = 60 Vdc, VBE(off) = 1.5 Vdc, TC = 150_C) (VCE = 80 Vdc, VBE(off) = 1.5 Vdc, TC = 150_C) (VCE = 100 Vdc, VBE(off) = 1.5 Vdc, TC = 150_C) Collector Cutoff Current (VCB = 60 Vdc, IE = 0) (VCB = 80 Vdc, IE = 0) (VCB = 100 Vdc, IE = 0) ICEX A 2N6040, 2N6043 2N6041, 2N6044 2N6042, 2N6045 2N6040, 2N6043 2N6041, 2N6044 2N6042, 2N6045 20 20 20 200 200 200 20 20 20 ICBO A 2N6040, 2N6043 2N6041, 2N6044 2N6042, 2N6045 Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) DC Current Gain (IC = 4.0 Adc, VCE = 4.0 Vdc) (IC = 3.0 Adc, VCE = 4.0 Vdc) (IC = 8.0 Adc, VCE = 4.0 Vdc) IEBO hFE 2.0 mAdc ON CHARACTERISTICS -- 2N6040, 41, 2N6043, 44 2N6042, 2N6045 All Types 1000 1000 100 -- -- -- -- -- 20.000 20,000 -- 2.0 2.0 4.0 4.5 2.8 Collector-Emitter Saturation Voltage (IC = 4.0 Adc, IB = 16 mAdc) (IC = 3.0 Adc, IB = 12 mAdc) (IC = 8.0 Adc, IB = 80 Adc) VCE(sat) Vdc 2N6040, 41, 2N6043, 44 2N6042, 2N6045 All Types Base-Emitter Saturation Voltage (IC = 8.0 Adc, IB = 80 mAdc) Base-Emitter On Voltage (IC = 4.0 Adc, VCE = 4.0 Vdc) VBE(sat) VBE(on) |hfe| Cob hfe Vdc Vdc DYNAMIC CHARACTERISTICS Small Signal Current Gain (IC = 3.0 Adc, VCE = 4.0 Vdc, f = 1.0 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz) 4.0 -- -- -- 2N6040/2N6042 2N6043/2N6045 300 200 -- pF -- Small-Signal Current Gain (IC = 3.0 Adc, VCE = 4.0 Vdc, f = 1.0 kHz) * Indicates JEDEC Registered Data. 300 5.0 2.0 1.0 0.7 0.5 RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS D1 MUST BE FAST RECOVERY TYPE, eg: 1N5825 USED ABOVE IB 100 mA RC MSD6100 USED BELOW IB 100 mA TUT V2 approx + 8.0 V 0 V1 approx -12 V tr, tf 10 ns DUTY CYCLE = 1.0% 51 RB D1 + 4.0 V 25 s 8.0 k 120 VCC - 30 V 3.0 ts tf SCOPE for td and tr, D1 is disconnected and V2 = 0 For NPN test circuit reverse all polarities and D1. 0.3 0.2 VCC = 30 V IC/IB = 250 IB1 = IB2 0.1 TJ = 25C PNP td @ VBE(off) = 0 V 0.07 NPN 0.05 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (AMP) tr 5.0 7.0 10 Figure 2. Switching Times Equivalent Circuit 2 Figure 3. Switching Times Motorola Bipolar Power Transistor Device Data 2N6040 thru 2N6042 2N6043 thru 2N6045 r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1.0 0.7 0.5 0.3 0.2 0.1 0.1 0.07 0.05 0.03 0.02 0.05 0.02 SINGLE PULSE 0.01 D = 0.5 0.2 P(pk) JC(t) = r(t) JC JC = 1.67C/W D CURVES APPLY FOR POWER PULSE TRAIN SHOWN t1 READ TIME AT t1 t2 TJ(pk) - TC = P(pk) JC(t) DUTY CYCLE, D = t1/t2 0.01 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 t, TIME OR PULSE WIDTH (ms) 20 30 50 100 200 300 500 1000 Figure 4. Thermal Response 20 10 IC, COLLECTOR CURRENT (AMP) 5.0 2.0 1.0 0.5 0.2 0.1 500 s 1.0 ms dc 5.0 ms TJ = 150C BONDING WIRE LIMITED THERMALLY LIMITED @ TC = 25C (SINGLE PULSE) SECOND BREAKDOWN LIMITED CURVES APPLY BELOW RATED VCEO 2N6040, 2N6043 2N6041, 2N6044 2N6045 2.0 3.0 50 5.0 7.0 10 20 30 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 100 s 0.05 0.02 1.0 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 5 is based on TJ(pk) = 150_C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided T J(pk) < 150_C. T J(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 70 100 Figure 5. Active-Region Safe Operating Area 10,000 hfe, SMALL-SIGNAL CURRENT GAIN 5000 3000 2000 1000 500 300 200 100 50 30 20 10 1.0 2.0 PNP NPN 5.0 10 20 50 100 f, FREQUENCY (kHz) 200 500 1000 TC = 25C VCE = 4.0 Vdc IC = 3.0 Adc 300 TJ = 25C 200 C, CAPACITANCE (pF) Cob 100 70 50 PNP NPN 30 0.1 0.2 0.5 1.0 2.0 5.0 10 20 VR, REVERSE VOLTAGE (VOLTS) 50 100 Cib Figure 6. Small-Signal Current Gain Figure 7. Capacitance Motorola Bipolar Power Transistor Device Data 3 2N6040 thru 2N6042 2N6043 thru 2N6045 PNP 2N6040, 2N6041, 2N6042 20,000 10,000 hFE , DC CURRENT GAIN 7000 5000 3000 2000 1000 700 500 300 200 0.1 VCE = 4.0 V 20,000 VCE = 4.0 V 10,000 hFE , DC CURRENT GAIN 7000 5000 3000 2000 25C 1000 700 500 300 200 0.1 TJ = 150C NPN 2N6043, 2N6044, 2N6045 TJ = 150C 25C - 55C - 55C 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (AMP) 5.0 7.0 10 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (AMP) 5.0 7.0 10 Figure 8. DC Current Gain VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 3.0 TJ = 25C 2.6 IC = 2.0 A 2.2 4.0 A 6.0 A 3.0 TJ = 25C 2.6 IC = 2.0 A 2.2 4.0 A 6.0 A 1.8 1.8 1.4 1.4 1.0 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IB, BASE CURRENT (mA) 20 30 1.0 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 IB, BASE CURRENT (mA) 10 20 30 Figure 9. Collector Saturation Region 3.0 TJ = 25C 2.5 V, VOLTAGE (VOLTS) V, VOLTAGE (VOLTS) 3.0 TJ = 25C 2.5 2.0 2.0 VBE(sat) @ IC/IB = 250 VBE @ VCE = 4.0 V 1.0 VCE(sat) @ IC/IB = 250 1.5 VBE @ VCE = 4.0 V VBE(sat) @ IC/IB = 250 VCE(sat) @ IC/IB = 250 1.5 1.0 0.5 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 0.5 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP) Figure 10. "On" Voltages 4 Motorola Bipolar Power Transistor Device Data 2N6040 thru 2N6042 2N6043 thru 2N6045 PACKAGE DIMENSIONS -T- B 4 SEATING PLANE F T S C NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 --- --- 0.080 MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 --- --- 2.04 Q 123 A U K H Z L V G D N R J STYLE 1: PIN 1. 2. 3. 4. BASE COLLECTOR EMITTER COLLECTOR CASE 221A-06 TO-220AB ISSUE Y Motorola Bipolar Power Transistor Device Data 5 2N6040 thru 2N6042 2N6043 thru 2N6045 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. Mfax is a trademark of Motorola, Inc. How to reach us: USA / EUROPE / Locations Not Listed: Motorola Literature Distribution; P.O. Box 5405, Denver, Colorado 80217. 303-675-2140 or 1-800-441-2447 MfaxTM: RMFAX0@email.sps.mot.com - TOUCHTONE 602-244-6609 INTERNET: http://www.mot.com/SPS/ JAPAN: Nippon Motorola Ltd.; Tatsumi-SPD-JLDC, 6F Seibu-Butsuryu-Center, 3-14-2 Tatsumi Koto-Ku, Tokyo 135, Japan. 81-3-3521-8315 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298 6 Motorola Bipolar Power Transistor Device Data 2N6040/D |
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