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| SI5463EDC Vishay Siliconix P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) () 0.062 @ VGS = --4.5 V --20 20 0.068@ VGS = --3.6 V 0.085 @ VGS = --2.5 V 0.120 @ VGS = --1.8 V ID (A) --5.1 --4.9 --4.4 --3.7 S 1206-8 ChipFETt 1 D D D D S D D G G 5.4 k Marking Code LB XX Lot Traceability and Date Code D P-Channel MOSFET Bottom View Part # Code Ordering Information: SI5463EDC-T1 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Currenta Maximum Power Dissipationa Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)c, d TA = 25_C TA = 85_C TA = 25_C TA = 85_C Symbol VDS VGS ID IDM IS PD TJ, Tstg 5 secs Steady State --20 12 Unit V --5.1 --3.7 --15 --1.9 2.3 1.2 --55 to 150 260 --3.8 --2.7 --1.0 1.25 0.65 W A _C THERMAL RESISTANCE RATINGS Parameter Maximum J Mi Junction-to-Ambienta ti t A bi t Maximum Junction-to-Foot (Drain) t 5 sec Steady State Steady State Symbol RthJA RthJF Typical 45 84 20 Maximum 55 100 25 Unit _C/W C/ Notes a. Surface Mounted on 1" x 1" FR4 Board. b. When using HBM. The MM rating is 300 V c. See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. d. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. Document Number: 71364 S-21251--Rev. C, 05-Aug-02 www.vishay.com 2-1 SI5463EDC Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta VGS(th) IGSS IDSS ID(on) VDS = VGS, ID = --250 mA VDS = 0 V, VGS = 4.5 V VDS = --16 V, VGS = 0 V VDS = --16 V, VGS = 0 V, TJ = 85_C VDS --5 V, VGS = --4.5 V VGS = --4.5 V, ID = --4.0 A Drain-Source On-State Drain Source On State Resistancea rDS( ) DS(on) VGS = --3.6 V, ID = --3.5 A VGS = --2.5 V, ID = --3.0 A VGS = --1.8 V, ID = --1.5 A Forward Transconductancea Diode Forward Voltagea gfs VSD VDS = --5 V, ID = --4.0 A IS = --1.0 A, VGS = 0 V --15 0.051 0.056 0.070 0.100 10 --0.75 --1.2 0.062 0.068 0.085 0.120 S V --0.45 1.5 --1 --5 A mA V Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Qg Qgs Qgd td(on) tr td(off) tf VDD = --10 V, RL = 10 ID --1 A, VGEN = --4.5 V, RG = 6 VDS = --10 V, VGS = --4.5 V, ID = --4.0 A 9.7 2.7 1.4 1.85 3.2 1.9 3.2 2.5 4.5 2.5 4.5 ms 15 nC Notes a. Pulse test; pulse width 300 ms, duty cycle 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 15 2.5 V 12 I D -- Drain Current (A) VGS = 4.5 thru 3 V I D -- Drain Current (A) 12 15 Transfer Characteristics TC = --55_C 25_C 9 2V 9 125_C 6 6 3 1.5 V 1 V, 0.5 V 0 2 4 6 8 10 3 0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VDS -- Drain-to-Source Voltage (V) www.vishay.com VGS -- Gate-to-Source Voltage (V) Document Number: 71364 S-21251--Rev. C, 05-Aug-02 2-2 SI5463EDC Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current 0.25 r DS(on) -- On-Resistance ( ) 2000 Capacitance C -- Capacitance (pF) 0.20 VGS = 1.8 V 0.15 VGS = 2.5 V VGS = 3.6 V 0.05 VGS = 4.5 V 1500 Ciss 1000 0.10 500 Coss Crss 0.00 0 3 6 9 12 15 0 0 4 8 12 16 20 ID -- Drain Current (A) VDS -- Drain-to-Source Voltage (V) Gate Charge 12 V GS -- Gate-to-Source Voltage (V) VDS = 10 V ID = 4.0 A 9 1.6 On-Resistance vs. Junction Temperature VGS = 4.5 V ID = 4.0 A 1.4 r DS(on) -- On-Resistance ( ) (Normalized) 10 15 20 25 1.2 6 1.0 3 0.8 0 0 5 Qg -- Total Gate Charge (nC) 0.6 --50 --25 0 25 50 75 100 125 150 TJ -- Junction Temperature (_C) Source-Drain Diode Forward Voltage 20 10 TJ = 150_C 1 r DS(on) -- On-Resistance ( ) 0.20 On-Resistance vs. Gate-to-Source Voltage I S -- Source Current (A) 0.15 ID = 4.0 A 0.10 TJ = 25_C 0.1 0.05 0.01 0.0 0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 VSD -- Source-to-Drain Voltage (V) VGS -- Gate-to-Source Voltage (V) Document Number: 71364 S-21251--Rev. C, 05-Aug-02 www.vishay.com 2-3 SI5463EDC Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 0.4 0.3 0.2 0.1 0.0 --0.1 --0.2 --50 ID = 250 mA Power (W) 30 Threshold Voltage 50 Single Pulse Power 40 V GS(th) Variance (V) 20 10 --25 0 25 50 75 100 125 150 0 10 --3 10 --2 10 --1 1 Time (sec) 10 100 600 TJ -- Temperature (_C) Gate-Source Voltage vs. Gate Current 1000 10,000 1,000 800 TA = 25_C I GSS ( m A) 100 10 1 0.1 0.01 0.001 0 0 2 4 6 8 10 12 VGS -- Gate-to-Source Voltage (V) 0.0001 0.10 Gate-Source Voltage vs. Gate Current I GSS ( m A) 600 150_C 400 200 25_C 1 VGS -- Gate-to-Source Voltage (V) 10 20 Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 --4 10 --3 10 --2 10 --1 1 Square Wave Pulse Duration (sec) Notes: PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 80_C/W 3. TJM -- TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 www.vishay.com 2-4 Document Number: 71364 S-21251--Rev. C, 05-Aug-02 SI5463EDC Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 --4 10 --3 10 --2 10 --1 Square Wave Pulse Duration (sec) 1 10 Document Number: 71364 S-21251--Rev. C, 05-Aug-02 www.vishay.com 2-5 |
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