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QSB320F SURFACE MOUNT SILICON INFRARED PHOTOTRANSISTOR PACKAGE DIMENSIONS 0.118 (3.0) 0.102 (2.6) 0.091 (2.3) 0.083 (2.1) 0.083 (2.1) 0.067 (1.7) 0.041 (0.1) 0.035 (0.9) 0.028 (0.7) 0.134 (3.4) 0.118 (3.0) 0.094 (2.4) FEATURES 0.043 (1.1) 0.020 (0.5) COLLECTOR 0.024 (0.6) 0.016 (0.4) SCHEMATIC COLLECTOR * Surface Mount PLCC-2 Package * Wide Reception Angle, 120 0.007 (.18) 0.005 (.12) * High Sensitivity * Phototransistor Output * Matched Emitter: QEB421 EMITTER NOTES: 1. Dimensions for all drawings are in inches (millimeters). 2. Tolerance of .010 (.25) on all non nominal dimensions unless otherwise specified. * Daylight Filter NOTES ABSOLUTE MAXIMUM RATINGS Parameter Operating Temperature Storage Temperature Soldering Temperature (Flow)(2,3) Collector Emitter Voltage Emitter Collector Voltage Collector Current Power Dissipation(1) (TA = 25C unless otherwise specified) Symbol TOPR TSTG TSOL-F VCE VEC IC PD Rating -55 to +100 -55 to +100 260 for 10 sec 35 5 15 165 Unit C C C V V mA mW 1. Derate power dissipation linearly 2.2 mW/C above 25C. 2. RMA flux is recommended. 3. Methanol or isopropyl alcohols are recommended as cleaning agents. 4. = 940 nm. ELECTRICAL / OPTICAL CHARACTERISTICS PARAMETER TEST CONDITIONS (TA =25C) SYMBOL PS SR MIN TYP MAX UNITS Peak Sensitivity Wavelength Wavelength Sensitivity Range Reception Angle Collector Emitter Dark Current Collector Emitter Breakdown Emitter Collector Breakdown On-State Collector Current Saturation Voltage Rise Time Fall Time VCE = 25 V, Ee = 0 IC = 1 mA IE = 100 A Ee = 0.1 mW/cm2(4), VCE = 5 V Ee = 0.5 mW/cm2(4), IC = 0.05 mA VCC = 5 V, RL = 100 IC = 1 mA -- 700 -- -- 30 5 16 -- -- -- 880 -- 120 -- -- -- -- -- 8 8 -- 1000 -- 200 -- -- -- 0.3 -- -- nm nm Deg. nA V V A V s s ID BVCEO BVECO IC (ON) VCE (SAT) tr tf 2001 Fairchild Semiconductor Corporation DS300387 2/26/01 1 OF 3 www.fairchildsemi.com QSB320F SURFACE MOUNT SILICON INFRARED PHOTOTRANSISTOR Fig.1 Dark Current Vs. Ambient Temperature 103 Normalized to: VCE=25V TA=25oC 102 VCE=10V Fig.2 Dark Current Vs. Collector Emitter Voltage 10 ID-Normalized Dark Current 101 ID-Dark Current (nA) 100 VCE=25V 1 100 10-1 40 60 80 0.1 0 10 20 30 40 50 60 o TA-Ambient Temperature ( C) VCE-Collector Emitter Voltage (V) Fig.3 Light Current Vs. Collector to Emitter Voltage 10 Ie=1mW/cm2 Ie=0.5mW/cm2 Ie=0.2mW/cm2 Ie=0.1mW/cm2 0.1 10 Fig4. Light Current Vs. Ambient Temperature IL-Normalized Light Current 1 IL-Normalized Light Current 1 0.01 Normalized to: VCE=5V Ie=0.5mW/cm2 TA=25oC 1 10 0.001 0.1 0.1 Normalized to: VCE=5V Ie=0.5mW/cm2 TA=25oC -40 -20 0 20 40 60 80 100 VCE-Collector-emitter Voltage (V) TA-Ambient Temperature ( oC) www.fairchildsemi.com 2 OF 3 2/26/01 DS300387 QSB320F SURFACE MOUNT SILICON INFRARED PHOTOTRANSISTOR DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body,or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. DS300387 2/26/01 3 OF 3 www.fairchildsemi.com |
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